CN1507043A - 树脂封装型半导体装置 - Google Patents

树脂封装型半导体装置 Download PDF

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Publication number
CN1507043A
CN1507043A CNA031530575A CN03153057A CN1507043A CN 1507043 A CN1507043 A CN 1507043A CN A031530575 A CNA031530575 A CN A031530575A CN 03153057 A CN03153057 A CN 03153057A CN 1507043 A CN1507043 A CN 1507043A
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China
Prior art keywords
semiconductor element
metallic plate
resin
semiconductor device
recess
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CNA031530575A
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CN1331224C (zh
Inventor
中岛泰
敏
石田清
鹿野武敏
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1507043A publication Critical patent/CN1507043A/zh
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Abstract

本发明提供一种可靠性高的树脂封装型半导体装置，其中，在固定半导体元件(2)的金属板(6)表面的半导体元件承载区域(16)以外的部分，大致等间隔地纵横配置多个方形凹部(14)，从而固定在金属板上的半导体元件正下方的焊锡厚度稳定性的提高，并能保证金属板与模塑树脂间接触的紧密度。

Description

树脂封装型半导体装置
技术领域
本发明涉及半导体装置，特别涉及一种树脂封装型的电力用半导体装置。
背景技术
传统的树脂封装型半导体装置如特开平5-235228号日本特许所述，在有多个凹槽的框架上焊接固定半导体元件，内侧凹槽可阻断焊接时熔开的焊锡，外侧凹槽可防止杂质通过后续树脂封装工序中加入的模塑树脂与该框架间的界面进入。但是，上述结构不能把流入凹槽的焊锡量控制到一定，无法保证焊锡层厚度的稳定性。
另外一种树脂封装型半导体装置如特开平9-92778号日本特许所述，通过在框架上设置用于承载半导体元件的芯片垫(die pad)，并在该芯片垫上形成多个凹部，使封装树脂与框架间的接合紧密度的提高，同时可防止用于芯片焊接的粘接剂的流出。但是，该发明未考虑焊锡在焊接时粘度会降低的情况，焊接时，熔化态的焊锡会通过凹部以外的部分流出，不能充分发挥对焊锡流动的抑制作用，无法严格控制半导体元件正下方的焊锡量。
还有一种树脂封装型半导体装置如特开平7-273270号日本特许所述，将设在框架上的多个凹部做成章鱼罐(octopus-pot)状，可提高框架与模塑树脂的接合紧密度，并且章鱼罐状经两次冲压加工而成，可降低成本。但是，模具形状由此变得复杂，用切削加工等较廉价的加工方法制作模具时，所能实现的加工部分的狭小间距会受到限制。另外，如果追求章鱼罐状凹部的狭间距化，就要使用放电加工等高成本的加工方法，会产生模具制造成本高的问题。
发明内容
本发明的目的在于克服上述先有技术中存在的不足，提供一种可靠性高的树脂封装型半导体装置。
为实现上述目的，本发明提供一种半导体元件焊接在金属板上的树脂封装型半导体装置，在固定半导体元件的金属板表面半导体元件承载区域(芯片垫)以外的部分以大致相同的间隔纵横配置多个凹部。
相对于现有技术，本发明具有如下优点：通过较为廉价的模具对金属板进行特定的加工，从而，随着固定在金属板上的半导体元件正下方焊锡厚度的稳定性的提高，能保证金属板与模塑树脂间接触的紧密度。
附图说明
图1是本发明实施例1中的树脂封装型半导体装置的纵向剖面图。
图2是设于图1所示树脂封装型半导体装置上的金属板的平面图。
图3是在图1所示的树脂封装型半导体装置的金属板上焊接半导体元件时的局部平面图。
图4是设在本发明实施例2中树脂封装型半导体装置上的金属板的局部透视图。
图5是图4所示的树脂封装型半导体装置的局部平面图，表示在金属板上焊接半导体元件时的状态。
具体实施方式
下面参照图示详细说明本发明的具体实施方式。
[实施例1]
图1所示为本发明实施例1中的树脂封装型半导体装置S，半导体元件2通过焊锡4固定在金属板6上。半导体元件2的表面电极与框架8的电极通过铝线连接布线，金属板6的一部分通过后叙的超声波接合与框架8固定，然后用模塑树脂12进行整体封装。
半导体元件2外形例如可做成边长15mm的方形，金属板6例如可选用约3mm厚的铜板。另外，焊锡4例如可选用主成分为Sn的材料。
图2所示为金属板6在焊接前的平面图，如图2所示，在金属板6的半导体元件承载部以外部分的表面上，以预定的间隔(例如400μm)纵横地形成例如边长200μm的方形凹部(dimple)14，作为半导体元件2承载部的芯片垫16的区域，平坦而不形成凹部。再有，凹部14的深度大致固定。
这里，上述金属板6的通过超声波接合与框架8固定的部分，为金属板6上半导体元件承载面以外设有凹部14的预定部位，框架8向金属板6的接合采用超声波接合的原因如下述。
例如，为抑制对环境的危害等原因而使用无铅焊锡时，焊锡融点的差值范围大约限制在10℃之内。因此，半导体元件与框架均通过焊接在金属板上固定的场合，就有同时进行的必要，但是这项操作不仅繁杂，而且加热时间变长。因此，在焊接界面会发生合金反应，从而带来可靠性得以保证的使用寿命变短等问题。
另一方面，超声波接合是一种不使用焊锡等焊剂的固相接合，框架在金属板上的固定若采用超声波接合等固相接合方法，则只要在将半导体元件固定于金属板时使用一次焊接加工就可以了。
超声波接合等固相接合，需要将母材变形以形成强固的接合部。在进行超声波接合时，用工具将框架按压在金属板上，一边加压力一边施加超声波振动，使框架塑性变形而接合。但是，如果金属面平坦，就会有这样的情况：为使框架变形到具充分接合强度的形态需要大量耗能，且不使框架产生过大变形就不能形成稳定性好的接合。框架的过大变形会导致其强度降低，因变形而变薄弱部分的强度大概只有母材的一半，并容易破损。
因此，本发明的方法中，对金属板6进行选择性的凹部加工，不仅使框架8与金属板6间的接合面积因凹部14的存在而减小，并且由于形成凹部14时对金属板6进行冲压加工或压印加工，导致凹部14周围的表面隆起也会使接合面积减小。因此，框架8与金属板6的接合面上排列有很多突起，开始接合时，由于接触面积小，提高了能量密度，增强了接合性能。就是说，即使施加在框架8上的能量小，接合部也能发生充分的塑性变形而提供所需的接合强度。减少施加在框架8上的能量，能够将框架8的变薄弱程度控制到最小，提高了接合的稳定性。
还有，图1所示的框架8上的凹凸8a就是框架8通过超声波接合到金属板6上时形成的。
图3是将半导体元件2焊接到金属板6上时的状态图。如图3所示，半导体元件2正下方的焊锡4虽然在承载半导体元件2时熔开到半导体元件2的外侧，但是，被以大致等间隔纵横配置的凹部14中的平行排布且靠近半导体元件2边缘的凹部14的边缘所阻断，仅在邻接凹部14之间形成较缓和的曲率，从而焊锡的熔开被抑制。另外，即使焊锡4由于振动等原因流入凹部14内，由于各凹部14的容积相对焊锡4的总体积所占比例很小，所以位于半导体元件2正下方的焊锡4厚度也不会发生大的改变。
如上述那样的追究焊锡厚度的稳定性，其理由如下。
即，金属板的构成材料例如Cu或Al与半导体元件的构成材料Si在线膨胀系数上相差很大，随着半导体元件在使用过程中产生的温度变化，焊锡在塑性变形过程中会产生热应力，其内部会有龟裂的产生与扩展。特别是对于电力用半导体元件而言，确保半导体元件的散热能力很重要，焊锡内部的龟裂扩展会增大半导体元件散热路径的热阻。
再有，焊锡较薄时(例如50μm以下)，焊锡所产生的变形量大且龟裂扩展速度快，与此相对，随着焊锡变厚，焊锡所产生的变形量变少且龟裂扩展速度也减慢。但是，在半导体元件的散热路径方面，热量通过焊锡层的热阻与焊锡层的厚度成比例，焊锡层越薄热阻越小。例如，对边长15mm的方形半导体元件来讲，焊锡层每增厚100μm，热阻约变大0.01℃/W，例如热阻为0.15℃/W左右的半导体装置中，焊锡层厚一旦达到300μm，其热阻就不能忽略不计。
因此，就保证半导体装置的寿命、热阻的稳定性而言，将焊锡厚度稳定维持在50～300μm范围内是很重要的，焊锡层厚的偏差最好控制在几十微米范围内。
另外，模塑树脂封装金属板及半导体元件时，通过选用线膨胀系数相近的模塑树脂与金属板，可抑制半导体元件随温度变化产生的变形。即，由于在半导体元件表面焊接线膨胀系数大于半导体元件而与金属板材相近的模塑树脂，温度的上升或下降过程中，会使半导体元件的伸缩接近于金属板的伸缩。其结果能减少半导体元件与金属板间存在的焊锡的变形量，大幅度抑制焊锡龟裂的产生及扩展。
模塑树脂与金属板表面之相互接触对上述的作用影响很大，若金属板表面与模塑树脂表面分离，就不能充分发挥作用。因此，模塑树脂与金属板间的可靠接合，对防止由焊锡龟裂扩展所引起的不良情况具有重要作用。
反之，对模塑树脂与金属板之间的界面而言，由于模塑树脂与金属板之间的线膨胀系数差，随着温度变化，模塑树脂与金属板间的界面会因剪切应力而剥离。在金属表面形成凹部可有效防止上述现象，通过形成在接触界面上且与之相垂直的壁面可抑制因线膨胀系数差而在接触界面产生的平行滑动。另外，由于剪切应力与距离成比例，上述壁面以小间距排列，可有效降低剪切应力。
基于上述理由，在本发明的半导体装置上，等间隔地纵横配置具有垂直壁面的略方形的凹部14，现将其加工方法说明如下。
采用冲压加工法在金属板的平坦表面上形成凹部14，成本低。冲压加工中所用金属模具，采用放电加工法和切削加工法制作。放电加工法成本高，但具有可随意获得所需形状的优点。
但是，本发明中纵横配置的略方形凹部14，使用切削加工法制作的模具就能实现。即，制作模具时，使旋转刀具在模具基材表面纵横两个方向等间距走动即可。对旋转刀具的宽度是有限制的，例如，要获得充分的加工性能，其宽度限制范围为180～200μm左右。另外，旋转刀具在金属基材表面走动后留下方形突起而制成模具时，若突起的表面尺寸过小，在凹部加工时会有折断的可能。为防止这种情况发生，要将方形突起的表面尺寸做大，其边长在200μm以上时，就能获得充分的耐久性。
如上述，在本发明中，通过在金属板6表面形成多个凹部14，可提高防止模塑树脂与金属板之间的界面剥离的效果，为形成凹部14采用切削加工法制作的低成本模具。另外，在模具的制作方面，为其耐久性考虑，以约400μm的间隔等间距纵横排布边长约200μm的方形突起的结构为宜。
再有，将金属板上承载半导体元件的区域(芯片垫)加工成平面，可使半导体元件正下方的焊锡厚度一定，若在半导体元件正下方的转角处设置低于所需焊锡厚度的突起，则能保证焊锡的最小厚度，改善焊锡厚度的稳定性。
[实施例2]
图4为本发明实施例2的设在树脂封装型半导体装置上的金属板6A的局部图，其中，金属板6A表面除去承载区域外的部分，以特定的间距纵横形成多个八角形凹部14A。各凹部14A，具有与实施例1的树脂封装型半导体装置S上所设的凹部14形状相同(俯视观看)而深度相异的两个凹部在对角线方向上偏置预定距离重合而成的形状。
该金属板6A上凹部的加工方法可以采用依次用第一模具与第二模具对金属板进行加工的二段加工方法，加工中使用实施例1的金属板6成形用的第一模具和形状与该第一模具大致相同但其表面形成的方形突起的高度不同的第二模具，并使二者以预定的量相互偏置。
这样，通过对金属板6A表面的二段加工，凹部14A的侧面积增大，减小了邻接凹部14A间的距离，从而大大降低模塑树脂与金属板间的剪切应力，提高了接触的紧密度。
图5为半导体元件2焊接到金属板6A上时的状态图，如图所示，与半导体元件的承载面位于同一平面的凹部14A的间距W在纵横两向均变窄，只要增加一次冲压加工，就能大大提高对焊锡的止流效果，并能进一步提高焊锡厚度的稳定性。
第二模具相对于第一模具的偏置量最好为凹部间距的一半左右，因为若使第一模具与第二模具设置成不相重合的相间格子状，第一模具加工产生的加工硬化会导致第二模具加工时不能获得较大的加工深度，从而与接触面相垂直的壁面高度会变小，减小剪切应力的作用会变弱。另外，若偏置量过小，则焊锡的止流或间距抑流的作用会随之减弱。
本发明由于具有上述结构，能达到下述有益效果。
在本发明中，由于在固定半导体元件的金属板表面半导体元件承载区域以外的部分以大致相等的间隔纵横配置多个方形凹部，随着焊锡层厚度稳定性的提高，可保证金属板与模塑树脂接触的紧密度，从而，可提供可靠性高的树脂封装型半导体装置。
另外，由于上述多个凹部可用冲压加工法或压印加工法形成在金属板表面，因此可使用廉价的金属模具，实现树脂封装型半导体装置的低成本化。

Claims (4)

1.一种树脂封装型半导体装置，其半导体元件用焊锡焊固在金属板上，其特征在于：
在固定所述半导体元件的所述金属板表面上的半导体元件承载区域以外的部分大致等间隔地纵横配置多个方形凹部。
2.一种树脂封装型半导体装置，其半导体元件用焊锡焊固在金属板上，其特征在于：
固定所述半导体元件的所述金属板表面上的半导体元件承载区域以外的部分，大致等间隔地纵横配置多个凹部；所述多个凹部，各由在对角线方向偏置的两个方形凹部构成。
3.如权利要求2所述的树脂封装型半导体装置，其特征在于：所述两个方形凹部的深度不同。
4.如权利要求1至3中任一项所述的树脂封装型半导体装置，其特征在于：在所述金属板的形成了所述凹部的部位接合框架。
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CN101383332B (zh) * 2007-09-03 2011-10-26 亿光电子工业股份有限公司 电子元件装置及其制造方法
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