CN1306561C - 最小化非平面性效应的晶体管金属栅结构及制作方法 - Google Patents

最小化非平面性效应的晶体管金属栅结构及制作方法 Download PDF

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Publication number
CN1306561C
CN1306561C CNB028236610A CN02823661A CN1306561C CN 1306561 C CN1306561 C CN 1306561C CN B028236610 A CNB028236610 A CN B028236610A CN 02823661 A CN02823661 A CN 02823661A CN 1306561 C CN1306561 C CN 1306561C
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China
Prior art keywords
layer
control electrode
gate
groove
stops
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Expired - Lifetime
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Chinese (zh)
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CN1596460A (zh
Inventor
约翰·M·格兰特
奥路班密·O·艾蒂图图
尤兰德·S·姆斯格鲁夫
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CNB028236610A 2001-11-30 2002-11-13 最小化非平面性效应的晶体管金属栅结构及制作方法 Expired - Lifetime CN1306561C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/997,899 US6423619B1 (en) 2001-11-30 2001-11-30 Transistor metal gate structure that minimizes non-planarity effects and method of formation
US09/997,899 2001-11-30

Publications (2)

Publication Number Publication Date
CN1596460A CN1596460A (zh) 2005-03-16
CN1306561C true CN1306561C (zh) 2007-03-21

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CNB028236610A Expired - Lifetime CN1306561C (zh) 2001-11-30 2002-11-13 最小化非平面性效应的晶体管金属栅结构及制作方法

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Country Link
US (1) US6423619B1 (enExample)
EP (1) EP1451859A2 (enExample)
JP (1) JP4159471B2 (enExample)
KR (1) KR20040063971A (enExample)
CN (1) CN1306561C (enExample)
AU (1) AU2002365768A1 (enExample)
TW (1) TWI251345B (enExample)
WO (1) WO2003049186A2 (enExample)

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Publication number Publication date
WO2003049186A2 (en) 2003-06-12
JP4159471B2 (ja) 2008-10-01
AU2002365768A1 (en) 2003-06-17
JP2005512326A (ja) 2005-04-28
US6423619B1 (en) 2002-07-23
TWI251345B (en) 2006-03-11
TW200300609A (en) 2003-06-01
EP1451859A2 (en) 2004-09-01
KR20040063971A (ko) 2004-07-15
WO2003049186A3 (en) 2003-09-12
AU2002365768A8 (en) 2003-06-17
CN1596460A (zh) 2005-03-16

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