JP4159471B2 - 非平坦性の影響を最小限にするトランジスタ金属ゲート構造の製造方法 - Google Patents

非平坦性の影響を最小限にするトランジスタ金属ゲート構造の製造方法 Download PDF

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Publication number
JP4159471B2
JP4159471B2 JP2003550282A JP2003550282A JP4159471B2 JP 4159471 B2 JP4159471 B2 JP 4159471B2 JP 2003550282 A JP2003550282 A JP 2003550282A JP 2003550282 A JP2003550282 A JP 2003550282A JP 4159471 B2 JP4159471 B2 JP 4159471B2
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Prior art keywords
control electrode
layer
gate
forming
stop layer
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Expired - Lifetime
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Japanese (ja)
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JP2005512326A (ja
JP2005512326A5 (enExample
Inventor
エム． グラント、ジョン
オー． アデトゥトゥ、オルブンミ
エス． マスグローブ、ヨランダ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2003550282A 2001-11-30 2002-11-13 非平坦性の影響を最小限にするトランジスタ金属ゲート構造の製造方法 Expired - Lifetime JP4159471B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/997,899 US6423619B1 (en) 2001-11-30 2001-11-30 Transistor metal gate structure that minimizes non-planarity effects and method of formation
PCT/US2002/036653 WO2003049186A2 (en) 2001-11-30 2002-11-13 Transistor metal gate structure that minimizes non-planarity effects and method of formation

Publications (3)

Publication Number Publication Date
JP2005512326A JP2005512326A (ja) 2005-04-28
JP2005512326A5 JP2005512326A5 (enExample) 2006-01-05
JP4159471B2 true JP4159471B2 (ja) 2008-10-01

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JP2003550282A Expired - Lifetime JP4159471B2 (ja) 2001-11-30 2002-11-13 非平坦性の影響を最小限にするトランジスタ金属ゲート構造の製造方法

Country Status (8)

Country Link
US (1) US6423619B1 (enExample)
EP (1) EP1451859A2 (enExample)
JP (1) JP4159471B2 (enExample)
KR (1) KR20040063971A (enExample)
CN (1) CN1306561C (enExample)
AU (1) AU2002365768A1 (enExample)
TW (1) TWI251345B (enExample)
WO (1) WO2003049186A2 (enExample)

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Also Published As

Publication number Publication date
WO2003049186A2 (en) 2003-06-12
AU2002365768A1 (en) 2003-06-17
JP2005512326A (ja) 2005-04-28
CN1306561C (zh) 2007-03-21
US6423619B1 (en) 2002-07-23
TWI251345B (en) 2006-03-11
TW200300609A (en) 2003-06-01
EP1451859A2 (en) 2004-09-01
KR20040063971A (ko) 2004-07-15
WO2003049186A3 (en) 2003-09-12
AU2002365768A8 (en) 2003-06-17
CN1596460A (zh) 2005-03-16

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