AU2002365768A1 - Transistor metal gate structure that minimizes non-planarity effects and method of formation - Google Patents

Transistor metal gate structure that minimizes non-planarity effects and method of formation

Info

Publication number
AU2002365768A1
AU2002365768A1 AU2002365768A AU2002365768A AU2002365768A1 AU 2002365768 A1 AU2002365768 A1 AU 2002365768A1 AU 2002365768 A AU2002365768 A AU 2002365768A AU 2002365768 A AU2002365768 A AU 2002365768A AU 2002365768 A1 AU2002365768 A1 AU 2002365768A1
Authority
AU
Australia
Prior art keywords
formation
gate structure
metal gate
minimizes non
transistor metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002365768A
Other languages
English (en)
Other versions
AU2002365768A8 (en
Inventor
Olubunmi O. Adetutu
John M. Grant
Yolanda S. Musgrove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002365768A8 publication Critical patent/AU2002365768A8/xx
Publication of AU2002365768A1 publication Critical patent/AU2002365768A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
AU2002365768A 2001-11-30 2002-11-13 Transistor metal gate structure that minimizes non-planarity effects and method of formation Abandoned AU2002365768A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/997,899 US6423619B1 (en) 2001-11-30 2001-11-30 Transistor metal gate structure that minimizes non-planarity effects and method of formation
US09/997,899 2001-11-30
PCT/US2002/036653 WO2003049186A2 (en) 2001-11-30 2002-11-13 Transistor metal gate structure that minimizes non-planarity effects and method of formation

Publications (2)

Publication Number Publication Date
AU2002365768A8 AU2002365768A8 (en) 2003-06-17
AU2002365768A1 true AU2002365768A1 (en) 2003-06-17

Family

ID=25544528

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002365768A Abandoned AU2002365768A1 (en) 2001-11-30 2002-11-13 Transistor metal gate structure that minimizes non-planarity effects and method of formation

Country Status (8)

Country Link
US (1) US6423619B1 (enExample)
EP (1) EP1451859A2 (enExample)
JP (1) JP4159471B2 (enExample)
KR (1) KR20040063971A (enExample)
CN (1) CN1306561C (enExample)
AU (1) AU2002365768A1 (enExample)
TW (1) TWI251345B (enExample)
WO (1) WO2003049186A2 (enExample)

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Also Published As

Publication number Publication date
WO2003049186A3 (en) 2003-09-12
AU2002365768A8 (en) 2003-06-17
JP4159471B2 (ja) 2008-10-01
KR20040063971A (ko) 2004-07-15
TWI251345B (en) 2006-03-11
WO2003049186A2 (en) 2003-06-12
US6423619B1 (en) 2002-07-23
JP2005512326A (ja) 2005-04-28
EP1451859A2 (en) 2004-09-01
CN1596460A (zh) 2005-03-16
TW200300609A (en) 2003-06-01
CN1306561C (zh) 2007-03-21

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase