TWI251345B - Transistor metal gate structure that minimizes non-planarity effects and method of formation - Google Patents
Transistor metal gate structure that minimizes non-planarity effects and method of formation Download PDFInfo
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- TWI251345B TWI251345B TW091134782A TW91134782A TWI251345B TW I251345 B TWI251345 B TW I251345B TW 091134782 A TW091134782 A TW 091134782A TW 91134782 A TW91134782 A TW 91134782A TW I251345 B TWI251345 B TW I251345B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 38
- 239000002184 metal Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title claims description 4
- 230000000694 effects Effects 0.000 title claims description 4
- 239000010410 layer Substances 0.000 claims description 189
- 239000000463 material Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 16
- 230000000979 retarding effect Effects 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 3
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 claims 1
- 229910021653 sulphate ion Inorganic materials 0.000 claims 1
- 235000010269 sulphur dioxide Nutrition 0.000 claims 1
- 239000004291 sulphur dioxide Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 description 22
- 230000008901 benefit Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- -1 aluminum compound Chemical class 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- DYYXTEOEXHZMMP-UHFFFAOYSA-N cobalt iridium Chemical compound [Co].[Co].[Co].[Ir] DYYXTEOEXHZMMP-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- ZACYQVZHFIYKMW-UHFFFAOYSA-N iridium titanium Chemical compound [Ti].[Ir] ZACYQVZHFIYKMW-UHFFFAOYSA-N 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Description
I251345
月說月應敘明’發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 先前申請參照 本申請案已於2001年11月30曰向美國專利提出申請,專 利申請號為09/997,899。 技術領域 本發明相關於半導體元件。更明確地說,本發明是關於 最小化非平坦性效應之電晶體金屬閘結構。 先前技術 本發明所使用詞彙「高k值材料(high-k material)」或「高 介電常數材料」是指任何介電常數大於二氧化矽之材料。 二氧化矽之介電常數約為3.9。 由於使用薄二氧化矽層,及使用多晶矽為閘電極造成多 晶矽閘之載子空乏等電性問題,因此半導體業界移向使用 向介電常數材料。並使用金屬閘結構以緩和多晶石夕載子空 乏問題。 一種形成電晶體金屬閘結構之方法包含:沉積金屬層在 一閘渠溝(意指一用於後續在該處形成一閘極的渠溝)之内 且沿著圍繞該閘渠溝之絕緣材料的上表面。再使用回蝕或 研磨製程來除去位於閘渠溝之外的金屬層部分。 當使用化學機械研磨(CMP)來除去金屬層時,會沿著半 導體晶圓發生碟形化,而使用回蝕時,圍繞閘渠溝之絕緣 材料會被腐蝕。如此造成了無功能的元件而降低良率。因 此當除去位於閘渠溝之外的金屬層部分時,需要最小化非 平坦性效應之半導體製程。 1251345 圖示簡單說明_ 一本發明以實例方式圖解說明且不限制於附隨的圖示,圖 不中相關的參閱符號對應相關的元件;其中: 圖1描繪根據本發明實施例去除在_更換閘集成中之虛 設閘後之半導體元件的橫截面圖; 圖2描緣根據本發明實施例,沉積問介f及問電極於圖^ 之半導體元件後之圖示; 圖3描繪根據本發明實施例,沉積阻滯層於圖2之半導體 元件後之圖示; 圖4描繪根據本發明實施例,沉積金屬層於圖3之半導體 元件後之圖示; 圖5描繪根據本發明實施例,除去部分金屬層於圖#之半 導體元件後之圖示;及 圖6描繪根據本發明實施例,除去圖5所示之半導體元件 之金屬層、阻滯層、閘電極層及閘介質部分後的圖示。 熟習此項技術者應了解圖中所描繪的元件係基於簡化及 清楚明確’並且不-定依比例繪製。例如,為有助於瞭解 本發明實施例’圖中所描緣的一些元件尺寸可能相對於其 它元件可被放大。 實施方式 形成一控制電極介電層,其緊鄰一控制電極渠溝所有表 面且延伸至該控制電極渠溝範圍外。形成一控制電極層, 其緊鄰該控制電極渠溝中之該控制電極介電層。形成一阻 滯層於該控制電極渠溝内以覆蓋該控制電極介電層。該控 1251345
miB 制電極層及該阻滯層皆去—人+古、廿& , 、 冗層0未70全填滿該控制電極渠溝。形成 ::導層’其緊鄰該阻滯層所有露出表面且延伸至該電極 知溝範圍外’而且實質上填滿該控制電極渠溝之剩餘容積 。該控制電極介電層、铉批也丨带& a 控制電極層、該阻滯層及該傳導 層形成一控制電極堆疊’該控制電極堆疊覆蓋在一基底中 =-通道區域’並且該控制電極堆疊的橫向尺寸及高度界 疋由側壁空間層所決定的控制電極渠溝。 當移除在阻滯層上之傳導層的_部份時,可利用阻滞層 貫質上減速移除速度。阻滯層為一傳導材料,在移除覆蓋 材料時、,該傳導材料的移除速率低於覆蓋材料的移除速率 。將一併移除高於預定高度之該傳導層、該阻滞層、該控 制電極層及該控制電極介電層的所有部分。本發明可藉由 參考圖式以更加瞭解’並且本發明係由申請專利範圍所定 義。 圖1描繪半導體元件或積體電路10之橫截面,其包含半導 體基底12、源極區14、沒極區16、側壁空間層^及用於在 除去虛設閘堆疊以在更換閘集成中形成閘渠溝19之後的層 間介電層(ILD)20,此法為熟習此項技術者所熟習。半導體 基底12可為任何半導體材料,諸如矽、砷化鎵、鍺化矽等 類似材料。此外半導體基底12可為絕緣層上覆矽(s〇i)基底 之矽層。源極區14及汲極區16被摻雜與半導體基底12導電 ϋ相反之導電性,並互相分開而在半導體基底12中界定一 通道區域。側壁空間層18為絕緣性,且最好包含氮化物或 氧化物材料。在實施例中,側壁空間層18為絕緣材料之堆 1251345
疊。層間介電層(ILD)20是絕緣材料(如,二氧化矽),並且 包含一絕緣材料堆疊。層間介電層(ILD)20鄰接側壁空間層 之外緣且絕緣於隨後形成之電晶體結構。 如圖2所示’閘介質或控制電極介電層22及閘電極24形成 於閘渠溝19内且沿著層間介電層(1]:1))2〇之上表面,·其形成 方法為化學氣相沉積(C VD)、物理氣相沉積(pVD)、原子層 沉積(ALD)、分子束磊晶成長(MBE)、電鍍、上述方法或類 似方法之組合。然而,閘介質層22及閘電極24並不需要以 相同製程來形成。閘介質層22可為任何介電材料,諸如, 二氧化矽、高k值材料、金屬氮氧矽化物、金屬氧化物、金 屬矽玻璃、或金屬鋁化合物。例如,閘介質層22可為氮化 矽、二氧化矽、Hf02、Zr02、HfSixOy、SiOxNy及類似材料 。典型的閘介質層22約為1〇〜60埃。 閘電極或電流電極24可為金屬氮化物(例如,TiN、TaN 、TiSiN、TaSiN)、導電金屬氧化物(例如,Ir〇、Ru〇)、金 屬鋁氮化物(例如,TixAlyNz)、金屬矽玻璃、金屬氮矽化物 、或任何具有適合的功函數之材料。適合的功函數即為決 疋電晶體所欲得臨界電壓值之材料特性。在實施例中,閘 電極24之厚度低於電晶體閘極長度之半,且大於埃。 如圖3所示,閘介質層22及閘電極24形成之後,阻滯層26 由CVD、PVD、ALD、MBE、電鍍、類似方法、或上述方 法之組合而形成。阻滯層26具導電性,且可為純金屬(例如 ,Ti、Ta、Ag、An、Ir或Ru)、金屬矽玻璃(例如,鈷矽玻 璃或鈦矽玻璃)、或矽。阻滯層26可作為隨後形成之覆層之 1251345
(5) 蝕刻阻滯層及/或研磨阻滯層。阻滯層26可作為披覆材料各 層化學機械研磨(CMP)或物理機械研磨之研磨阻滯層。在 實施例中,阻滯層26為研磨阻滯層,厚度5〇埃且已證實足 夠傳統的CMP設備使用。當作為蝕刻阻滯層時,阻滯層% 可作為彼覆材料各層化學回钱之阻滯層。 如圖4所示,阻滯層26形成之後,傳導層28由cVI)、PVD 、ALD、MBE、電鍍、類似方法、或上述方法之組合而形 成於半導體元件10之上。傳導層28為一低電阻導電材料, 可為金屬(例如,W、A卜An、Cu、Ag或Pt)、金屬矽化物 或矽、類似元素、或金屬之組合。傳導層28需能由阻滯層 26材料藉由研磨或蝕刻而分離出。傳導層28之厚度較阻滯 層26、閘電極24及閘介質層22三層之總厚度還厚。因此, 阻;ητ層26、閘電極24及閘介質層22三層之厚度皆比傳導層 28薄。在實施例中,傳導層28之厚度約為閘渠溝19深度之 兩倍。 如圖5所示,傳導層28形成之後,傳導層28之部分被研磨 或#刻直至阻滯層26露出。藉由此使用對阻滯層26有分離 性之材料之製程而實行。例如,假設傳導層28為鎢且阻滯 層26為鈦,則CMP可使用化合物FeN〇3。用來移除傳導声 2 8材料之化合物,對金屬氮化物或其他閘電極型態之材料 傾向不具分離性。然而,此化合物對阻滯層26露出之材料 具分離性。 如圖6所示,在除去傳導層2 8位於姓刻阻滯層2 6上方之部 分後,一不同之研磨或蝕刻製程用於除去阻滯層26、問電 1251345
(6) 極24及閘介質層22。ILD層20被用為移除所選各層被覆材料 之第二阻滯材料。例如,用CMP移除假設傳導層28,半導 體元件10可轉換至此CMP工具中之不同滚筒。此滾筒具有 不同之研磨漿及墊片以移除與ILD層20具分離性之阻滯層 2 6、閘電極2 4及閘介質層2 2。例如,化合物氫氧化銨可用 於CMP此三層26、24及22。然而,阻滯層26、閘電極24及 閘介質層22之移除並不需要使用相同化合物或在同一製程 階段完成。因此,可使用一種以上製程化合物及階段來移 除26、24及22此三層。 在移除ILD層20上方之閘電極堆疊或控制電極堆疊(包含 ,傳導層28、阻滯層26、閘電極24及閘介質層22)後所產生 的結構即為具最小碟形化或凹陷現象之閘電極堆疊或控制 電極堆疊。。位於半導體基底12之其他區域(未繪出)中之 ILD層20之碟形化亦被最小化半導體基底。優點為,由於碟 形化被最小化而導致良率增加。阻滯層26的存在,容許執 行至少兩階段之研磨或蝕刻製程。由於與沿著晶粒或晶圓 具有良好均勻性之較薄層相比,一般較難研磨或蝕刻一較 厚層,所以藉由阻滯層的阻滯作用及隨後使用獨立製程移 除較薄各層之方式,此移除厚層分離自下覆各薄層之能力 增進了平坦性之控制。 本發明另一優點為,容許閘電極材料之選擇與其研磨或 蝕刻特性無關。因此,本發明提供閘電極材料之選擇性比 不使用阻滯層2 6時的範圍更廣。 在形成-最小化非平坦性電晶體金屬閘後,熟知本技術 !251345 ⑺ Γϋ^ϋϋΐ 者所知悉之傳統附加製程(未繪出)被實行。例如,沉 二ILD材料於圖6所示之結構上,隨後並形成金屬連接。 在前述的規格中,已參考特定實施例來描述本發明。然 而,熟習此項技術者應了解,可進行各種修正及變更而不 會脫離如下文申請專利範圍中提出的本發明範疇。例如, 可將額外層併入閘電極堆疊,諸如擴散或障壁層。因此, 本說明書及圖示可視為說明性而非限定性之意義 類修改皆屬於本發明範疇内。 ’此 …關於特定實施例之利益、其它優點及問題解決方案都已 评述如^。然而’利益、優點、問題解決方案及任何可能 引起利盈、優點、問題解決方案被發現或變成顯著的任何 元素以上都不曾被解釋為任何或所有本申請專利範圍之 重=、需要的、必要的特點或元素。此處所使用之詞彙 包各」(comprises,comprising或相關詞類變化)意圖表示 非限定之涵蓋(尚可能包含未列出之項目)。如此,一製程 、方法、作品或裝置所包含元件之列表並不只包含列出之 兀件;而是可能包含未列出但屬於上述製程、方法、作品 或裝置所固有之元件。 圖式代表符號說明 10 金屬閘結構 19 閘溝槽 22 閘介質 控制電極介電層 24 閘電極 -12- 1251345 ⑻ 26 阻滞層 28 金屬層 傳導層 12 半導體基底 14 源極區 16 没極區 18 側壁空間層 20 層間介電層
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Claims (1)
1251345 拾、申請專利範圍 1· 一種電晶體結構(10),包含: 中且分隔之一第一電流 ,而界定該基底之_通 一基底(12),其具有形成於其 電極(14)及一第二電流電極(16) 道區域; -控制電極堆叠’其覆蓋於該基底之此通道區域,节 控制電極堆疊具有-侧壁空間層(18)所決定之橫向尺; 且具有-ma界定該控制電極渠冑,該控 堆疊更包含: 一控制電極介電層(22),其緊鄰該側壁空間層(18) 及該通道區域上方之區域,該控制電極介電層填充該 控制電極渠溝之第一部分; 、^ 一控制電極層(24),其緊鄰該控制電極介電層,該 控制電極層填充該控制電極渠溝之第二部分且具有 決定該電晶體結構臨界電壓值之材料特性; 一傳導阻滯層(26),其緊鄰該控制電極層,該傳導 阻滯層填充該控制電極渠溝之第三部分且在形成該 電晶體結構時,提供用於選定層移除覆蓋材料時之阻 滯材料;及 一傳導層(28),其緊鄰該傳導阻滯層,該傳導層填 充該控制電極渠溝之第四部分,該第一部分、該第二 部分、該第三部分及該第四部分實質上填滿該控制電 極渠溝。 2·如申請專利範圍第1項之電晶體結構,該傳導阻滯層(26)
1251345 為用於化學機械研磨覆層材料之研磨阻滯層。 3.如申請專利範圍第1項之電晶體結構,傳導阻滯層(26) 為用於物理機械研磨覆層材料之研磨阻滯層。 如申明專利範圍第1項之電晶體結構,傳導阻滯層(26) 為用於化學回姓覆層材料之姓刻阻滯層。 5·如申請專利範圍第1項之電晶體結構,控制電極介電層 (22)含有選自下列各物所组成之群組中材料之一··二氧 化石夕、氮氧石夕化物、氮石夕化物、金屬石夕玻璃、金屬紹化 物、金屬氧化物、及金屬氮氧化物。 如申咕專利範圍第1項之電晶體結構,該傳導阻滯層(26) 含有一傳導材料,當移除覆蓋材料時,該傳導材料的移 除速率低於覆蓋材料的移除速率。 7· —種提供電晶體(10)之方法,包含: 提供一基底(12); 在該基底中形成第一電流電極(14)及第二電流電極 (16),該第一電流電極及該第二電流電極被分隔以界定 該基底之一通道區域; 形成一決定一控制電極位置之控制電極渠溝;及 形成一控制電極堆疊於控制電極渠溝之内,控制電極 堆疊之形成更包含·· 形成一控制電極介電層(22)於該控制電極渠溝之 内外且緊鄰該控制電極渠溝之側壁,該控制電極介電 層填充該控制電極渠溝之第一部分; 形成一控制電極層(24),其緊鄰該控制電極介電層 1251345
’該控制電極層填充控制電極渠溝之第二部分且具有 決定該電晶體臨界電壓值之材料特性; 形成一傳導阻滯層(26),其緊鄰該控制電極層,該 傳導阻滯層填充該控制電極渠溝之第三部分且在形 成該電晶體時,提供用於選定層移除覆蓋材料時之阻 滯材料; 形成一傳導層(28),其緊鄰該傳導阻滯層,該傳導 層填充該控制電極渠溝之第四部分,該第一部分、該 第二部分、該第三部分及該第四部分實質上填滿該控 制電極渠溝口; 除去第一傳導層之初始部分(26上表面以上),使用 該傳導阻滯層以阻滯移除而形成第一上表面;及 除去第二傳導層之初始部分(20上表面以上),及傳 導阻滯層、控制電極層及控制電極介電層之一部分, 而形成一具有實質上平坦上表面之電晶體控制電極 堆疊。 8·如申請專利範圍第7項之方法,更包含·· 形成一層間介電層(2〇),其鄰接該控制電極渠溝之外 緣’該層間介電層絕緣於該電晶體;及 使用該層間介電層作為第二阻滯材料以除去第二傳 導層之初始部分,及傳導阻滯層、控制電極層及控制電 極介電層之一部分。 9.如申請專利範圍第7項之方法,更包含·· 开7成傳導阻滞層(26),其含有一傳導材料,當移除
1251345 覆蓋材料時’該傳導材料的移除速率低於覆蓋材料的移 除速率。 10. 一種於閘渠溝内形成一具有最小化非平坦性效應之金 屬閘結構(10)之方法,包含: 形成一閘介電層(22),其緊鄰該閘渠溝所有表面且延 伸至該閘渠溝範圍外; 形成一第一金屬層之閘電極層(24),其緊鄰該閘介電 層且延伸至該閘渠溝範圍外,該閘電極層並未完全填滿 該閘渠溝; ' 形成一阻滯層(26),其緊鄰該閘電極層所有露出表面 且延伸至該閘渠溝範圍外,該阻滯層並未完全填滿該閘 渠溝; 形成第二金屬層之傳導層(28),其緊鄰該阻滯層所有 露出表面且延伸至該閘渠溝範圍外,該傳導層實質上填 滿該閘渠溝; 移除在該阻滯層(26)之上的該傳導層(28)之所有部份 ’可利用該阻滯層實質上減速移除速度;及 移除該傳導層(28)、該阻滯層(26)、該閘電極層(24) 及該閘介電層(22)之高於預定高度(該侧壁空間層高度) 之上的所有部分。 -4-
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8759219B2 (en) | 2011-01-24 | 2014-06-24 | United Microelectronics Corp. | Planarization method applied in process of manufacturing semiconductor component |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6511911B1 (en) * | 2001-04-03 | 2003-01-28 | Advanced Micro Devices, Inc. | Metal gate stack with etch stop layer |
US6849545B2 (en) * | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
JP2005518088A (ja) * | 2001-07-16 | 2005-06-16 | アプライド マテリアルズ インコーポレイテッド | タングステン複合膜の形成 |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6809026B2 (en) | 2001-12-21 | 2004-10-26 | Applied Materials, Inc. | Selective deposition of a barrier layer on a metal film |
EP1324393B1 (en) * | 2001-12-28 | 2008-04-09 | STMicroelectronics S.r.l. | Manufacturing process of a semiconductor non-volatile memory cell and corresponding memory-cell |
US6894355B1 (en) * | 2002-01-11 | 2005-05-17 | Advanced Micro Devices, Inc. | Semiconductor device with silicide source/drain and high-K dielectric |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6720027B2 (en) * | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
KR100476556B1 (ko) * | 2002-04-11 | 2005-03-18 | 삼성전기주식회사 | 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법 |
US7279432B2 (en) * | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7404985B2 (en) | 2002-06-04 | 2008-07-29 | Applied Materials, Inc. | Noble metal layer formation for copper film deposition |
US7264846B2 (en) * | 2002-06-04 | 2007-09-04 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US7910165B2 (en) * | 2002-06-04 | 2011-03-22 | Applied Materials, Inc. | Ruthenium layer formation for copper film deposition |
US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040036129A1 (en) * | 2002-08-22 | 2004-02-26 | Micron Technology, Inc. | Atomic layer deposition of CMOS gates with variable work functions |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US6924184B2 (en) * | 2003-03-21 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor device and method for forming a semiconductor device using post gate stack planarization |
US6686282B1 (en) | 2003-03-31 | 2004-02-03 | Motorola, Inc. | Plated metal transistor gate and method of formation |
US7071086B2 (en) * | 2003-04-23 | 2006-07-04 | Advanced Micro Devices, Inc. | Method of forming a metal gate structure with tuning of work function by silicon incorporation |
US7211508B2 (en) | 2003-06-18 | 2007-05-01 | Applied Materials, Inc. | Atomic layer deposition of tantalum based barrier materials |
US20050104142A1 (en) * | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
US20050181226A1 (en) * | 2004-01-26 | 2005-08-18 | Applied Materials, Inc. | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber |
US7205234B2 (en) | 2004-02-05 | 2007-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming metal silicide |
US20050253268A1 (en) * | 2004-04-22 | 2005-11-17 | Shao-Ta Hsu | Method and structure for improving adhesion between intermetal dielectric layer and cap layer |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7265048B2 (en) * | 2005-03-01 | 2007-09-04 | Applied Materials, Inc. | Reduction of copper dewetting by transition metal deposition |
US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
US7473637B2 (en) | 2005-07-20 | 2009-01-06 | Micron Technology, Inc. | ALD formed titanium nitride films |
JP2007073637A (ja) * | 2005-09-05 | 2007-03-22 | Tokyo Electron Ltd | 成膜方法および半導体装置の製造方法 |
KR101019293B1 (ko) | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마-강화 원자층 증착 장치 및 방법 |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7833358B2 (en) * | 2006-04-07 | 2010-11-16 | Applied Materials, Inc. | Method of recovering valuable material from exhaust gas stream of a reaction chamber |
US8193641B2 (en) * | 2006-05-09 | 2012-06-05 | Intel Corporation | Recessed workfunction metal in CMOS transistor gates |
US7655550B2 (en) * | 2006-06-30 | 2010-02-02 | Freescale Semiconductor, Inc. | Method of making metal gate transistors |
JP2008171872A (ja) * | 2007-01-09 | 2008-07-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US7737028B2 (en) * | 2007-09-28 | 2010-06-15 | Applied Materials, Inc. | Selective ruthenium deposition on copper materials |
US8022472B2 (en) * | 2007-12-04 | 2011-09-20 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
US7964487B2 (en) * | 2008-06-04 | 2011-06-21 | International Business Machines Corporation | Carrier mobility enhanced channel devices and method of manufacture |
US8524588B2 (en) | 2008-08-18 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process |
KR101574107B1 (ko) | 2010-02-11 | 2015-12-04 | 삼성전자 주식회사 | 반도체 장치의 제조 방법 |
JP5937297B2 (ja) * | 2010-03-01 | 2016-06-22 | キヤノンアネルバ株式会社 | 金属窒化膜、該金属窒化膜を用いた半導体装置、および半導体装置の製造方法 |
JP5598145B2 (ja) * | 2010-08-04 | 2014-10-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
CN102437032B (zh) * | 2010-09-29 | 2015-04-01 | 中国科学院微电子研究所 | 后栅工艺中金属栅的制作方法 |
KR101746709B1 (ko) * | 2010-11-24 | 2017-06-14 | 삼성전자주식회사 | 금속 게이트 전극들을 갖는 반도체 소자의 제조방법 |
TWI512797B (zh) * | 2011-01-24 | 2015-12-11 | United Microelectronics Corp | 應用於半導體元件製程中之平坦化方法 |
CN102646580B (zh) * | 2011-02-18 | 2016-10-05 | 联华电子股份有限公司 | 应用于半导体元件工艺中的平坦化方法以及栅极构造 |
US8865594B2 (en) * | 2011-03-10 | 2014-10-21 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
US20130075831A1 (en) * | 2011-09-24 | 2013-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate stack having tialn blocking/wetting layer |
US8901665B2 (en) * | 2011-12-22 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate structure for semiconductor device |
US9324710B2 (en) | 2014-02-24 | 2016-04-26 | International Business Machines Corporation | Very planar gate cut post replacement gate process |
US9583486B1 (en) * | 2015-11-19 | 2017-02-28 | International Business Machines Corporation | Stable work function for narrow-pitch devices |
TWI633660B (zh) * | 2017-05-22 | 2018-08-21 | Powerchip Technology Corporation | 半導體元件及其製造方法 |
CN109309003A (zh) * | 2017-07-26 | 2019-02-05 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的形成方法 |
US11152222B2 (en) | 2019-08-06 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dishing prevention structure embedded in a gate electrode |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5494857A (en) * | 1993-07-28 | 1996-02-27 | Digital Equipment Corporation | Chemical mechanical planarization of shallow trenches in semiconductor substrates |
US5604159A (en) | 1994-01-31 | 1997-02-18 | Motorola, Inc. | Method of making a contact structure |
US5364817A (en) | 1994-05-05 | 1994-11-15 | United Microelectronics Corporation | Tungsten-plug process |
US5654589A (en) | 1995-06-06 | 1997-08-05 | Advanced Micro Devices, Incorporated | Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application |
US6040599A (en) * | 1996-03-12 | 2000-03-21 | Mitsubishi Denki Kabushiki Kaisha | Insulated trench semiconductor device with particular layer structure |
US6015757A (en) * | 1997-07-02 | 2000-01-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method of oxide etching with high selectivity to silicon nitride by using polysilicon layer |
US5966597A (en) * | 1998-01-06 | 1999-10-12 | Altera Corporation | Method of forming low resistance gate electrodes |
TW379406B (en) * | 1998-04-27 | 2000-01-11 | United Microelectronics Corp | Shallow trench isolation method |
US6150260A (en) | 1998-07-06 | 2000-11-21 | Chartered Semiconductor Manufacturing Ltd. | Sacrificial stop layer and endpoint for metal CMP |
US6140224A (en) | 1999-04-19 | 2000-10-31 | Worldiwide Semiconductor Manufacturing Corporation | Method of forming a tungsten plug |
JP4237332B2 (ja) * | 1999-04-30 | 2009-03-11 | 株式会社東芝 | 半導体装置の製造方法 |
JP2000332242A (ja) * | 1999-05-21 | 2000-11-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6171910B1 (en) | 1999-07-21 | 2001-01-09 | Motorola Inc. | Method for forming a semiconductor device |
US6248675B1 (en) * | 1999-08-05 | 2001-06-19 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant using lowered temperatures |
US6087231A (en) | 1999-08-05 | 2000-07-11 | Advanced Micro Devices, Inc. | Fabrication of dual gates of field transistors with prevention of reaction between the gate electrode and the gate dielectric with a high dielectric constant |
US6200886B1 (en) | 1999-10-28 | 2001-03-13 | United Silicon Incorporated | Fabricating process for polysilicon gate |
-
2001
- 2001-11-30 US US09/997,899 patent/US6423619B1/en not_active Expired - Lifetime
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2002
- 2002-11-13 CN CNB028236610A patent/CN1306561C/zh not_active Expired - Lifetime
- 2002-11-13 JP JP2003550282A patent/JP4159471B2/ja not_active Expired - Lifetime
- 2002-11-13 WO PCT/US2002/036653 patent/WO2003049186A2/en active Application Filing
- 2002-11-13 KR KR10-2004-7007928A patent/KR20040063971A/ko not_active Application Discontinuation
- 2002-11-13 EP EP02804420A patent/EP1451859A2/en not_active Withdrawn
- 2002-11-13 AU AU2002365768A patent/AU2002365768A1/en not_active Abandoned
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8759219B2 (en) | 2011-01-24 | 2014-06-24 | United Microelectronics Corp. | Planarization method applied in process of manufacturing semiconductor component |
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WO2003049186A3 (en) | 2003-09-12 |
AU2002365768A8 (en) | 2003-06-17 |
CN1306561C (zh) | 2007-03-21 |
CN1596460A (zh) | 2005-03-16 |
JP2005512326A (ja) | 2005-04-28 |
JP4159471B2 (ja) | 2008-10-01 |
US6423619B1 (en) | 2002-07-23 |
WO2003049186A2 (en) | 2003-06-12 |
TW200300609A (en) | 2003-06-01 |
EP1451859A2 (en) | 2004-09-01 |
KR20040063971A (ko) | 2004-07-15 |
AU2002365768A1 (en) | 2003-06-17 |
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