CN1302482C - 具有冗长修复功能的薄膜磁性体存储装置 - Google Patents

具有冗长修复功能的薄膜磁性体存储装置 Download PDF

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Publication number
CN1302482C
CN1302482C CNB021434522A CN02143452A CN1302482C CN 1302482 C CN1302482 C CN 1302482C CN B021434522 A CNB021434522 A CN B021434522A CN 02143452 A CN02143452 A CN 02143452A CN 1302482 C CN1302482 C CN 1302482C
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CN
China
Prior art keywords
programming
mentioned
memory cells
spare
data
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Expired - Fee Related
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CNB021434522A
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English (en)
Chinese (zh)
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CN1433023A (zh
Inventor
大谷顺
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Renesas Electronics Corp
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Mitsubishi Electric Corp
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Publication of CN1433023A publication Critical patent/CN1433023A/zh
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Publication of CN1302482C publication Critical patent/CN1302482C/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB021434522A 2002-01-15 2002-09-26 具有冗长修复功能的薄膜磁性体存储装置 Expired - Fee Related CN1302482C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002006424A JP2003208796A (ja) 2002-01-15 2002-01-15 薄膜磁性体記憶装置
JP6424/2002 2002-01-15
JP6424/02 2002-01-15

Publications (2)

Publication Number Publication Date
CN1433023A CN1433023A (zh) 2003-07-30
CN1302482C true CN1302482C (zh) 2007-02-28

Family

ID=19191226

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021434522A Expired - Fee Related CN1302482C (zh) 2002-01-15 2002-09-26 具有冗长修复功能的薄膜磁性体存储装置

Country Status (6)

Country Link
US (1) US6671213B2 (enExample)
JP (1) JP2003208796A (enExample)
KR (1) KR100501126B1 (enExample)
CN (1) CN1302482C (enExample)
DE (1) DE10238782A1 (enExample)
TW (1) TW569239B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916214A (zh) * 2010-07-28 2010-12-15 钰创科技股份有限公司 存储器装置与存储器控制方法
US8223566B2 (en) 2009-08-05 2012-07-17 Etron Technology, Inc. Memory device and memory control method

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003197769A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 半導体記憶装置
JP4208507B2 (ja) * 2002-02-04 2009-01-14 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US6940748B2 (en) * 2002-05-16 2005-09-06 Micron Technology, Inc. Stacked 1T-nMTJ MRAM structure
AU2003243244A1 (en) * 2002-05-16 2003-12-02 Micron Technology, Inc. STACKED 1T-nMEMORY CELL STRUCTURE
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US6882553B2 (en) * 2002-08-08 2005-04-19 Micron Technology Inc. Stacked columnar resistive memory structure and its method of formation and operation
JP4405162B2 (ja) * 2003-02-14 2010-01-27 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
US20050086471A1 (en) * 2003-10-20 2005-04-21 Spencer Andrew M. Removable information storage device that includes a master encryption key and encryption keys
JP4641726B2 (ja) * 2004-01-07 2011-03-02 パナソニック株式会社 半導体記憶装置
JP4607685B2 (ja) * 2005-06-30 2011-01-05 富士通セミコンダクター株式会社 半導体メモリ
JP4822828B2 (ja) * 2005-12-13 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
US7362644B2 (en) * 2005-12-20 2008-04-22 Magic Technologies, Inc. Configurable MRAM and method of configuration
TWI316712B (en) * 2006-06-27 2009-11-01 Silicon Motion Inc Non-volatile memory, repair circuit, and repair method thereof
KR100933839B1 (ko) * 2008-03-10 2009-12-24 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 그 동작 방법
US8638596B2 (en) * 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
KR20130021760A (ko) 2011-08-23 2013-03-06 삼성전자주식회사 자기터널접합 브레이크 다운을 이용한 안티퓨즈 회로, 및 이를 포함하는 반도체 장치
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
KR102003851B1 (ko) * 2012-08-31 2019-10-01 에스케이하이닉스 주식회사 메모리 및 이를 포함하는 메모리 시스템
US9543041B2 (en) 2014-08-29 2017-01-10 Everspin Technologies, Inc. Configuration and testing for magnetoresistive memory to ensure long term continuous operation
US9799412B2 (en) * 2014-09-30 2017-10-24 Sony Semiconductor Solutions Corporation Memory having a plurality of memory cells and a plurality of word lines
JP7310302B2 (ja) * 2019-05-24 2023-07-19 富士通セミコンダクターメモリソリューション株式会社 半導体記憶装置
EP4030436B1 (en) 2020-10-20 2024-05-29 Changxin Memory Technologies, Inc. Repair circuit and memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523974A (en) * 1994-04-25 1996-06-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device with redundant memory cell backup
US6256237B1 (en) * 1999-12-28 2001-07-03 United Microelectronics Corp. Semiconductor device and method for repairing failed memory cell by directly programming fuse memory cell
CN1327238A (zh) * 2000-05-03 2001-12-19 惠普公司 电阻性交点存储器单元阵列的等电位读出法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
JPH08279299A (ja) 1995-04-04 1996-10-22 Toshiba Microelectron Corp 半導体集積回路および半導体メモリ
JPH11232895A (ja) * 1998-02-18 1999-08-27 Matsushita Electric Ind Co Ltd 不揮発性メモリ
JP3848004B2 (ja) * 1999-03-11 2006-11-22 株式会社東芝 半導体メモリ装置及び半導体メモリ装置搭載システム
JP3701160B2 (ja) * 1999-12-24 2005-09-28 シャープ株式会社 冗長機能を有する不揮発性半導体メモリ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523974A (en) * 1994-04-25 1996-06-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device with redundant memory cell backup
US6256237B1 (en) * 1999-12-28 2001-07-03 United Microelectronics Corp. Semiconductor device and method for repairing failed memory cell by directly programming fuse memory cell
CN1327238A (zh) * 2000-05-03 2001-12-19 惠普公司 电阻性交点存储器单元阵列的等电位读出法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8223566B2 (en) 2009-08-05 2012-07-17 Etron Technology, Inc. Memory device and memory control method
CN101916214A (zh) * 2010-07-28 2010-12-15 钰创科技股份有限公司 存储器装置与存储器控制方法
CN101916214B (zh) * 2010-07-28 2013-03-20 钰创科技股份有限公司 存储器装置与存储器控制方法

Also Published As

Publication number Publication date
TW569239B (en) 2004-01-01
US20030133334A1 (en) 2003-07-17
KR20030062210A (ko) 2003-07-23
US6671213B2 (en) 2003-12-30
DE10238782A1 (de) 2003-07-31
KR100501126B1 (ko) 2005-07-18
CN1433023A (zh) 2003-07-30
JP2003208796A (ja) 2003-07-25

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Owner name: RENESAS ELECTRONICS CORPORATION

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Granted publication date: 20070228

Termination date: 20160926

CF01 Termination of patent right due to non-payment of annual fee