CN1253608C - 处理具有最小边缘隔绝的衬底的方法和设备 - Google Patents

处理具有最小边缘隔绝的衬底的方法和设备 Download PDF

Info

Publication number
CN1253608C
CN1253608C CNB018044514A CN01804451A CN1253608C CN 1253608 C CN1253608 C CN 1253608C CN B018044514 A CNB018044514 A CN B018044514A CN 01804451 A CN01804451 A CN 01804451A CN 1253608 C CN1253608 C CN 1253608C
Authority
CN
China
Prior art keywords
wafer
contact
anode
forming board
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018044514A
Other languages
English (en)
Chinese (zh)
Other versions
CN1433487A (zh
Inventor
布伦特·M·巴索尔
西普里安·尤佐
霍梅尤恩·塔利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Nutool Inc
Original Assignee
ASM Nutool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Nutool Inc filed Critical ASM Nutool Inc
Publication of CN1433487A publication Critical patent/CN1433487A/zh
Application granted granted Critical
Publication of CN1253608C publication Critical patent/CN1253608C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB018044514A 2000-11-03 2001-11-02 处理具有最小边缘隔绝的衬底的方法和设备 Expired - Fee Related CN1253608C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24521100P 2000-11-03 2000-11-03
US60/245,211 2000-11-03
US09/760,757 2001-01-17
US09/760,757 US6610190B2 (en) 2000-11-03 2001-01-17 Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate

Publications (2)

Publication Number Publication Date
CN1433487A CN1433487A (zh) 2003-07-30
CN1253608C true CN1253608C (zh) 2006-04-26

Family

ID=26937071

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018044514A Expired - Fee Related CN1253608C (zh) 2000-11-03 2001-11-02 处理具有最小边缘隔绝的衬底的方法和设备

Country Status (8)

Country Link
US (3) US6610190B2 (enExample)
EP (1) EP1332243A2 (enExample)
JP (1) JP4034655B2 (enExample)
KR (1) KR100801270B1 (enExample)
CN (1) CN1253608C (enExample)
AU (1) AU2002246910A1 (enExample)
TW (1) TW511167B (enExample)
WO (1) WO2002057514A2 (enExample)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7686935B2 (en) * 1998-10-26 2010-03-30 Novellus Systems, Inc. Pad-assisted electropolishing
US7425250B2 (en) 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6251235B1 (en) 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US7097755B2 (en) 1998-12-01 2006-08-29 Asm Nutool, Inc. Electrochemical mechanical processing with advancible sweeper
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6413388B1 (en) * 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US7204917B2 (en) * 1998-12-01 2007-04-17 Novellus Systems, Inc. Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6852208B2 (en) 2000-03-17 2005-02-08 Nutool, Inc. Method and apparatus for full surface electrotreating of a wafer
US7754061B2 (en) * 2000-08-10 2010-07-13 Novellus Systems, Inc. Method for controlling conductor deposition on predetermined portions of a wafer
US6921551B2 (en) 2000-08-10 2005-07-26 Asm Nutool, Inc. Plating method and apparatus for controlling deposition on predetermined portions of a workpiece
US20040170753A1 (en) * 2000-12-18 2004-09-02 Basol Bulent M. Electrochemical mechanical processing using low temperature process environment
US7172497B2 (en) * 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US7244347B2 (en) * 2001-01-17 2007-07-17 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
US7211174B2 (en) * 2001-01-17 2007-05-01 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
US7211186B2 (en) * 2001-01-17 2007-05-01 Novellus Systems, Inc. Method and system to provide electrical contacts for electrotreating processes
EP1444722A2 (en) * 2001-10-26 2004-08-11 Nutool, Inc. Method and system to provide electrical contacts for electrotreating processes
US6815354B2 (en) * 2001-10-27 2004-11-09 Nutool, Inc. Method and structure for thru-mask contact electrodeposition
CN1646263A (zh) * 2001-11-02 2005-07-27 Asm纳托尔公司 具有可前移的清扫器的电化学机械加工
US6776693B2 (en) * 2001-12-19 2004-08-17 Applied Materials Inc. Method and apparatus for face-up substrate polishing
US7029567B2 (en) * 2001-12-21 2006-04-18 Asm Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US6833063B2 (en) * 2001-12-21 2004-12-21 Nutool, Inc. Electrochemical edge and bevel cleaning process and system
US20060137994A1 (en) * 2001-12-21 2006-06-29 Basol Bulent M Method of wafer processing with edge seed layer removal
CA2479873A1 (en) * 2002-04-12 2003-10-23 Acm Research, Inc. Electropolishing and electroplating methods
US7128823B2 (en) 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US7090750B2 (en) * 2002-08-26 2006-08-15 Micron Technology, Inc. Plating
US20040226654A1 (en) * 2002-12-17 2004-11-18 Akihisa Hongo Substrate processing apparatus and substrate processing method
US7201828B2 (en) * 2003-02-25 2007-04-10 Novellus Systems, Inc. Planar plating apparatus
US20050173260A1 (en) * 2003-03-18 2005-08-11 Basol Bulent M. System for electrochemical mechanical polishing
DE602004018631D1 (de) * 2003-04-24 2009-02-05 Afshin Ahmadian En
US7335288B2 (en) * 2003-09-18 2008-02-26 Novellus Systems, Inc. Methods for depositing copper on a noble metal layer of a work piece
WO2005045906A1 (en) * 2003-10-29 2005-05-19 Asm Nutool, Inc. System and method for electroless surface conditioning
US7064057B2 (en) * 2003-11-21 2006-06-20 Asm Nutool, Inc. Method and apparatus for localized material removal by electrochemical polishing
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US20060183321A1 (en) * 2004-09-27 2006-08-17 Basol Bulent M Method for reduction of gap fill defects
US7550070B2 (en) * 2006-02-03 2009-06-23 Novellus Systems, Inc. Electrode and pad assembly for processing conductive layers
EP1839695A1 (en) * 2006-03-31 2007-10-03 Debiotech S.A. Medical liquid injection device
US8500985B2 (en) 2006-07-21 2013-08-06 Novellus Systems, Inc. Photoresist-free metal deposition
US7732329B2 (en) * 2006-08-30 2010-06-08 Ipgrip, Llc Method and apparatus for workpiece surface modification for selective material deposition
US20080237048A1 (en) * 2007-03-30 2008-10-02 Ismail Emesh Method and apparatus for selective electrofilling of through-wafer vias
DE102007026633B4 (de) * 2007-06-06 2009-04-02 Atotech Deutschland Gmbh Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware
US20090065365A1 (en) * 2007-09-11 2009-03-12 Asm Nutool, Inc. Method and apparatus for copper electroplating
TWI410531B (zh) * 2010-05-07 2013-10-01 Taiwan Semiconductor Mfg 直立式電鍍設備及其電鍍方法
US9988734B2 (en) 2011-08-15 2018-06-05 Lam Research Corporation Lipseals and contact elements for semiconductor electroplating apparatuses
KR102092416B1 (ko) * 2012-03-30 2020-03-24 노벨러스 시스템즈, 인코포레이티드 역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝
SG11201504860PA (en) 2012-12-21 2015-07-30 Agency Science Tech & Res Porous metallic membrane
EP3070191B1 (en) * 2013-11-14 2017-08-16 Toyota Jidosha Kabushiki Kaisha Film forming apparatus for metal coating film and film forming method therefor
JP5826952B2 (ja) 2014-01-17 2015-12-02 株式会社荏原製作所 めっき方法およびめっき装置
JP6745103B2 (ja) * 2014-11-26 2020-08-26 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体電気メッキ装置用のリップシールおよび接触要素
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US20170145577A1 (en) * 2015-11-19 2017-05-25 Rohm And Haas Electronic Materials Llc Method of electroplating low internal stress copper deposits on thin film substrates to inhibit warping
US20190096866A1 (en) * 2017-09-26 2019-03-28 Powertech Technology Inc. Semiconductor package and manufacturing method thereof
KR20220107012A (ko) * 2019-11-27 2022-08-01 램 리써치 코포레이션 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거
US11230778B2 (en) 2019-12-13 2022-01-25 Macdermid Enthone Inc. Cobalt chemistry for smooth topology

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328273A (en) 1966-08-15 1967-06-27 Udylite Corp Electro-deposition of copper from acidic baths
FR2510145B1 (fr) 1981-07-24 1986-02-07 Rhone Poulenc Spec Chim Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes
US4948474A (en) 1987-09-18 1990-08-14 Pennsylvania Research Corporation Copper electroplating solutions and methods
DE3836521C2 (de) 1988-10-24 1995-04-13 Atotech Deutschland Gmbh Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5256565A (en) 1989-05-08 1993-10-26 The United States Of America As Represented By The United States Department Of Energy Electrochemical planarization
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5567300A (en) * 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5681215A (en) 1995-10-27 1997-10-28 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5795215A (en) 1995-06-09 1998-08-18 Applied Materials, Inc. Method and apparatus for using a retaining ring to control the edge effect
EP0751567B1 (en) 1995-06-27 2007-11-28 International Business Machines Corporation Copper alloys for chip interconnections and method of making
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US5762544A (en) 1995-10-27 1998-06-09 Applied Materials, Inc. Carrier head design for a chemical mechanical polishing apparatus
US5840629A (en) 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5862605A (en) * 1996-05-24 1999-01-26 Ebara Corporation Vaporizer apparatus
US5793272A (en) 1996-08-23 1998-08-11 International Business Machines Corporation Integrated circuit toroidal inductor
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2000510289A (ja) 1996-12-16 2000-08-08 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 集積回路チップ上の電気めっき相互接続構造
US5933753A (en) 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US5911619A (en) 1997-03-26 1999-06-15 International Business Machines Corporation Apparatus for electrochemical mechanical planarization
US5930669A (en) 1997-04-03 1999-07-27 International Business Machines Corporation Continuous highly conductive metal wiring structures and method for fabricating the same
US5922091A (en) 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6001235A (en) 1997-06-23 1999-12-14 International Business Machines Corporation Rotary plater with radially distributed plating solution
US5985123A (en) 1997-07-09 1999-11-16 Koon; Kam Kwan Continuous vertical plating system and method of plating
WO1999016936A1 (en) * 1997-09-30 1999-04-08 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6159354A (en) 1997-11-13 2000-12-12 Novellus Systems, Inc. Electric potential shaping method for electroplating
US6156167A (en) 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6027631A (en) 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6004880A (en) 1998-02-20 1999-12-21 Lsi Logic Corporation Method of single step damascene process for deposition and global planarization
US5976331A (en) 1998-04-30 1999-11-02 Lucent Technologies Inc. Electrodeposition apparatus for coating wafers
US6071388A (en) 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6074544A (en) 1998-07-22 2000-06-13 Novellus Systems, Inc. Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer
US6132587A (en) 1998-10-19 2000-10-17 Jorne; Jacob Uniform electroplating of wafers
US6176992B1 (en) 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6251235B1 (en) * 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6534116B2 (en) * 2000-08-10 2003-03-18 Nutool, Inc. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US6610190B2 (en) * 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US7578923B2 (en) * 1998-12-01 2009-08-25 Novellus Systems, Inc. Electropolishing system and process
US6902659B2 (en) * 1998-12-01 2005-06-07 Asm Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6589105B2 (en) * 1998-12-01 2003-07-08 Nutool, Inc. Pad tensioning method and system in a bi-directional linear polisher
US6103085A (en) 1998-12-04 2000-08-15 Advanced Micro Devices, Inc. Electroplating uniformity by diffuser design
US6261426B1 (en) * 1999-01-22 2001-07-17 International Business Machines Corporation Method and apparatus for enhancing the uniformity of electrodeposition or electroetching
US6066030A (en) 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
JP3422731B2 (ja) * 1999-07-23 2003-06-30 理化学研究所 Ｅｌｉｄセンタレス研削装置
US6653226B1 (en) * 2001-01-09 2003-11-25 Novellus Systems, Inc. Method for electrochemical planarization of metal surfaces
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6346479B1 (en) * 2000-06-14 2002-02-12 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device having copper interconnects
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US6696358B2 (en) * 2001-01-23 2004-02-24 Honeywell International Inc. Viscous protective overlayers for planarization of integrated circuits
US7201829B2 (en) * 2001-03-01 2007-04-10 Novellus Systems, Inc. Mask plate design
US6482656B1 (en) * 2001-06-04 2002-11-19 Advanced Micro Devices, Inc. Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit
TW584899B (en) * 2001-07-20 2004-04-21 Nutool Inc Planar metal electroprocessing

Also Published As

Publication number Publication date
US20030209429A1 (en) 2003-11-13
WO2002057514A2 (en) 2002-07-25
CN1433487A (zh) 2003-07-30
JP2005501963A (ja) 2005-01-20
JP4034655B2 (ja) 2008-01-16
US20020053516A1 (en) 2002-05-09
US6610190B2 (en) 2003-08-26
KR20020095179A (ko) 2002-12-20
AU2002246910A1 (en) 2002-07-30
EP1332243A2 (en) 2003-08-06
US20060006060A1 (en) 2006-01-12
WO2002057514A3 (en) 2003-02-06
US6942780B2 (en) 2005-09-13
TW511167B (en) 2002-11-21
KR100801270B1 (ko) 2008-02-04

Similar Documents

Publication Publication Date Title
CN1253608C (zh) 处理具有最小边缘隔绝的衬底的方法和设备
CN1187481C (zh) 电解处理装置
CN1180133C (zh) 应用调制电场在小深孔中的金属电淀积法
CN1191605C (zh) 在电镀和/或电抛光期间装载和定位半导体工件的方法与设备
CN1296524C (zh) 对工件进行电化学处理的处理容器、反应器和方法
KR100616198B1 (ko) 기판상에 전기도금하는 전기화학적 증착 시스템 및 방법
CN1276483C (zh) 以电化学机械研磨法进行衬底平坦化
JP2005501963A5 (enExample)
CN2730554Y (zh) 一种用于抛光衬底的抛光部件
CN100346009C (zh) 电解加工装置和方法
CN1531028A (zh) 电镀方法
CN1639840A (zh) 无电淀积设备和方法
CN1633520A (zh) 镀膜装置和方法
CN1551931A (zh) 用于控制电镀层厚度均匀性的方法和装置
CN1551295A (zh) 电子器件的制造方法
CN1610769A (zh) 电镀装置
CN1458671A (zh) 用于电化学机械抛光的导电抛光用品
CN1137511C (zh) 生产集成电路时由高纯铜电镀形成导体结构的方法
CN101039743A (zh) 氢纯化过滤器及其制造方法
TWI275667B (en) Tilted electrochemical plating cell with constant wafer immersion angle
CN1310312C (zh) 半导体集成电路及其制造方法和制造装置
JP6783317B2 (ja) 電解処理治具及び電解処理方法
CN1807699A (zh) 用以改进工艺均匀性的晶片电镀装置
CN1958868A (zh) 电镀设备及用于半导体器件的制造工艺
JP2010037637A (ja) 電解処理装置及び電解処理方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060426

Termination date: 20141102

EXPY Termination of patent right or utility model