JP2005501963A5 - - Google Patents
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- JP2005501963A5 JP2005501963A5 JP2002558562A JP2002558562A JP2005501963A5 JP 2005501963 A5 JP2005501963 A5 JP 2005501963A5 JP 2002558562 A JP2002558562 A JP 2002558562A JP 2002558562 A JP2002558562 A JP 2002558562A JP 2005501963 A5 JP2005501963 A5 JP 2005501963A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- contact
- contact member
- pad
- electrochemical processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 235000012431 wafers Nutrition 0.000 claims description 490
- 230000033001 locomotion Effects 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 83
- 230000008021 deposition Effects 0.000 claims description 78
- 238000012545 processing Methods 0.000 claims description 73
- 239000004020 conductor Substances 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 40
- 238000003672 processing method Methods 0.000 claims description 37
- 238000005530 etching Methods 0.000 claims description 16
- 230000005518 electrochemistry Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 103
- 239000010410 layer Substances 0.000 description 84
- 239000003792 electrolyte Substances 0.000 description 78
- 239000010949 copper Substances 0.000 description 70
- 239000000463 material Substances 0.000 description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 49
- 229910052802 copper Inorganic materials 0.000 description 49
- 239000000758 substrate Substances 0.000 description 35
- 238000004070 electrodeposition Methods 0.000 description 31
- 239000000243 solution Substances 0.000 description 30
- 230000002093 peripheral effect Effects 0.000 description 29
- 238000007747 plating Methods 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 16
- 238000007493 shaping process Methods 0.000 description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000007717 exclusion Effects 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 8
- 238000005498 polishing Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- 238000000866 electrolytic etching Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002301 combined effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24521100P | 2000-11-03 | 2000-11-03 | |
| US09/760,757 US6610190B2 (en) | 2000-11-03 | 2001-01-17 | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| PCT/US2001/051158 WO2002057514A2 (en) | 2000-11-03 | 2001-11-02 | Method and apparatus for electrodeposition or etching of uniform film with minimal edge exclusion on substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005501963A JP2005501963A (ja) | 2005-01-20 |
| JP2005501963A5 true JP2005501963A5 (enExample) | 2005-04-07 |
| JP4034655B2 JP4034655B2 (ja) | 2008-01-16 |
Family
ID=26937071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002558562A Expired - Fee Related JP4034655B2 (ja) | 2000-11-03 | 2001-11-02 | 均一な薄膜を最小限のエッジ除外で基板上へ電着する方法および装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6610190B2 (enExample) |
| EP (1) | EP1332243A2 (enExample) |
| JP (1) | JP4034655B2 (enExample) |
| KR (1) | KR100801270B1 (enExample) |
| CN (1) | CN1253608C (enExample) |
| AU (1) | AU2002246910A1 (enExample) |
| TW (1) | TW511167B (enExample) |
| WO (1) | WO2002057514A2 (enExample) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7686935B2 (en) * | 1998-10-26 | 2010-03-30 | Novellus Systems, Inc. | Pad-assisted electropolishing |
| US7425250B2 (en) | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
| US6610190B2 (en) * | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| US6251235B1 (en) | 1999-03-30 | 2001-06-26 | Nutool, Inc. | Apparatus for forming an electrical contact with a semiconductor substrate |
| US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
| US7097755B2 (en) | 1998-12-01 | 2006-08-29 | Asm Nutool, Inc. | Electrochemical mechanical processing with advancible sweeper |
| US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
| US6413388B1 (en) * | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
| US7204917B2 (en) * | 1998-12-01 | 2007-04-17 | Novellus Systems, Inc. | Workpiece surface influencing device designs for electrochemical mechanical processing and method of using the same |
| US6355153B1 (en) * | 1999-09-17 | 2002-03-12 | Nutool, Inc. | Chip interconnect and packaging deposition methods and structures |
| US6852208B2 (en) | 2000-03-17 | 2005-02-08 | Nutool, Inc. | Method and apparatus for full surface electrotreating of a wafer |
| US7754061B2 (en) * | 2000-08-10 | 2010-07-13 | Novellus Systems, Inc. | Method for controlling conductor deposition on predetermined portions of a wafer |
| US6921551B2 (en) | 2000-08-10 | 2005-07-26 | Asm Nutool, Inc. | Plating method and apparatus for controlling deposition on predetermined portions of a workpiece |
| US20040170753A1 (en) * | 2000-12-18 | 2004-09-02 | Basol Bulent M. | Electrochemical mechanical processing using low temperature process environment |
| US7172497B2 (en) * | 2001-01-05 | 2007-02-06 | Asm Nutool, Inc. | Fabrication of semiconductor interconnect structures |
| US7244347B2 (en) * | 2001-01-17 | 2007-07-17 | Novellus Systems, Inc. | Method and system to provide electrical contacts for electrotreating processes |
| US7211174B2 (en) * | 2001-01-17 | 2007-05-01 | Novellus Systems, Inc. | Method and system to provide electrical contacts for electrotreating processes |
| US7211186B2 (en) * | 2001-01-17 | 2007-05-01 | Novellus Systems, Inc. | Method and system to provide electrical contacts for electrotreating processes |
| EP1444722A2 (en) * | 2001-10-26 | 2004-08-11 | Nutool, Inc. | Method and system to provide electrical contacts for electrotreating processes |
| US6815354B2 (en) * | 2001-10-27 | 2004-11-09 | Nutool, Inc. | Method and structure for thru-mask contact electrodeposition |
| CN1646263A (zh) * | 2001-11-02 | 2005-07-27 | Asm纳托尔公司 | 具有可前移的清扫器的电化学机械加工 |
| US6776693B2 (en) * | 2001-12-19 | 2004-08-17 | Applied Materials Inc. | Method and apparatus for face-up substrate polishing |
| US7029567B2 (en) * | 2001-12-21 | 2006-04-18 | Asm Nutool, Inc. | Electrochemical edge and bevel cleaning process and system |
| US6833063B2 (en) * | 2001-12-21 | 2004-12-21 | Nutool, Inc. | Electrochemical edge and bevel cleaning process and system |
| US20060137994A1 (en) * | 2001-12-21 | 2006-06-29 | Basol Bulent M | Method of wafer processing with edge seed layer removal |
| CA2479873A1 (en) * | 2002-04-12 | 2003-10-23 | Acm Research, Inc. | Electropolishing and electroplating methods |
| US7128823B2 (en) | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
| US7090750B2 (en) * | 2002-08-26 | 2006-08-15 | Micron Technology, Inc. | Plating |
| US20040226654A1 (en) * | 2002-12-17 | 2004-11-18 | Akihisa Hongo | Substrate processing apparatus and substrate processing method |
| US7201828B2 (en) * | 2003-02-25 | 2007-04-10 | Novellus Systems, Inc. | Planar plating apparatus |
| US20050173260A1 (en) * | 2003-03-18 | 2005-08-11 | Basol Bulent M. | System for electrochemical mechanical polishing |
| DE602004018631D1 (de) * | 2003-04-24 | 2009-02-05 | Afshin Ahmadian | En |
| US7335288B2 (en) * | 2003-09-18 | 2008-02-26 | Novellus Systems, Inc. | Methods for depositing copper on a noble metal layer of a work piece |
| WO2005045906A1 (en) * | 2003-10-29 | 2005-05-19 | Asm Nutool, Inc. | System and method for electroless surface conditioning |
| US7064057B2 (en) * | 2003-11-21 | 2006-06-20 | Asm Nutool, Inc. | Method and apparatus for localized material removal by electrochemical polishing |
| US7648622B2 (en) * | 2004-02-27 | 2010-01-19 | Novellus Systems, Inc. | System and method for electrochemical mechanical polishing |
| US20060183321A1 (en) * | 2004-09-27 | 2006-08-17 | Basol Bulent M | Method for reduction of gap fill defects |
| US7550070B2 (en) * | 2006-02-03 | 2009-06-23 | Novellus Systems, Inc. | Electrode and pad assembly for processing conductive layers |
| EP1839695A1 (en) * | 2006-03-31 | 2007-10-03 | Debiotech S.A. | Medical liquid injection device |
| US8500985B2 (en) | 2006-07-21 | 2013-08-06 | Novellus Systems, Inc. | Photoresist-free metal deposition |
| US7732329B2 (en) * | 2006-08-30 | 2010-06-08 | Ipgrip, Llc | Method and apparatus for workpiece surface modification for selective material deposition |
| US20080237048A1 (en) * | 2007-03-30 | 2008-10-02 | Ismail Emesh | Method and apparatus for selective electrofilling of through-wafer vias |
| DE102007026633B4 (de) * | 2007-06-06 | 2009-04-02 | Atotech Deutschland Gmbh | Vorrichtung und Verfahren zum elektrolytischen Behandeln von plattenförmiger Ware |
| US20090065365A1 (en) * | 2007-09-11 | 2009-03-12 | Asm Nutool, Inc. | Method and apparatus for copper electroplating |
| TWI410531B (zh) * | 2010-05-07 | 2013-10-01 | Taiwan Semiconductor Mfg | 直立式電鍍設備及其電鍍方法 |
| US9988734B2 (en) | 2011-08-15 | 2018-06-05 | Lam Research Corporation | Lipseals and contact elements for semiconductor electroplating apparatuses |
| KR102092416B1 (ko) * | 2012-03-30 | 2020-03-24 | 노벨러스 시스템즈, 인코포레이티드 | 역전류 디플레이팅을 이용한 전기도금 기판 홀더의 클리닝 |
| SG11201504860PA (en) | 2012-12-21 | 2015-07-30 | Agency Science Tech & Res | Porous metallic membrane |
| EP3070191B1 (en) * | 2013-11-14 | 2017-08-16 | Toyota Jidosha Kabushiki Kaisha | Film forming apparatus for metal coating film and film forming method therefor |
| JP5826952B2 (ja) | 2014-01-17 | 2015-12-02 | 株式会社荏原製作所 | めっき方法およびめっき装置 |
| JP6745103B2 (ja) * | 2014-11-26 | 2020-08-26 | ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | 半導体電気メッキ装置用のリップシールおよび接触要素 |
| US10053793B2 (en) | 2015-07-09 | 2018-08-21 | Lam Research Corporation | Integrated elastomeric lipseal and cup bottom for reducing wafer sticking |
| US20170145577A1 (en) * | 2015-11-19 | 2017-05-25 | Rohm And Haas Electronic Materials Llc | Method of electroplating low internal stress copper deposits on thin film substrates to inhibit warping |
| US20190096866A1 (en) * | 2017-09-26 | 2019-03-28 | Powertech Technology Inc. | Semiconductor package and manufacturing method thereof |
| KR20220107012A (ko) * | 2019-11-27 | 2022-08-01 | 램 리써치 코포레이션 | 쓰루-레지스트 (through-resist) 도금을 위한 에지 제거 |
| US11230778B2 (en) | 2019-12-13 | 2022-01-25 | Macdermid Enthone Inc. | Cobalt chemistry for smooth topology |
Family Cites Families (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328273A (en) | 1966-08-15 | 1967-06-27 | Udylite Corp | Electro-deposition of copper from acidic baths |
| FR2510145B1 (fr) | 1981-07-24 | 1986-02-07 | Rhone Poulenc Spec Chim | Additif pour bain de cuivrage electrolytique acide, son procede de preparation et son application au cuivrage des circuits imprimes |
| US4948474A (en) | 1987-09-18 | 1990-08-14 | Pennsylvania Research Corporation | Copper electroplating solutions and methods |
| DE3836521C2 (de) | 1988-10-24 | 1995-04-13 | Atotech Deutschland Gmbh | Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und rißfreien Kupferüberzügen und Verwendung des Bades |
| US5084071A (en) | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US4954142A (en) | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5256565A (en) | 1989-05-08 | 1993-10-26 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical planarization |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| US5516412A (en) | 1995-05-16 | 1996-05-14 | International Business Machines Corporation | Vertical paddle plating cell |
| US5681215A (en) | 1995-10-27 | 1997-10-28 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5795215A (en) | 1995-06-09 | 1998-08-18 | Applied Materials, Inc. | Method and apparatus for using a retaining ring to control the edge effect |
| EP0751567B1 (en) | 1995-06-27 | 2007-11-28 | International Business Machines Corporation | Copper alloys for chip interconnections and method of making |
| US5755859A (en) | 1995-08-24 | 1998-05-26 | International Business Machines Corporation | Cobalt-tin alloys and their applications for devices, chip interconnections and packaging |
| US5762544A (en) | 1995-10-27 | 1998-06-09 | Applied Materials, Inc. | Carrier head design for a chemical mechanical polishing apparatus |
| US5840629A (en) | 1995-12-14 | 1998-11-24 | Sematech, Inc. | Copper chemical mechanical polishing slurry utilizing a chromate oxidant |
| US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5862605A (en) * | 1996-05-24 | 1999-01-26 | Ebara Corporation | Vaporizer apparatus |
| US5793272A (en) | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
| US5773364A (en) | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| US5954997A (en) | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| JP2000510289A (ja) | 1996-12-16 | 2000-08-08 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 集積回路チップ上の電気めっき相互接続構造 |
| US5933753A (en) | 1996-12-16 | 1999-08-03 | International Business Machines Corporation | Open-bottomed via liner structure and method for fabricating same |
| US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
| US5911619A (en) | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
| US5930669A (en) | 1997-04-03 | 1999-07-27 | International Business Machines Corporation | Continuous highly conductive metal wiring structures and method for fabricating the same |
| US5922091A (en) | 1997-05-16 | 1999-07-13 | National Science Council Of Republic Of China | Chemical mechanical polishing slurry for metallic thin film |
| US6001235A (en) | 1997-06-23 | 1999-12-14 | International Business Machines Corporation | Rotary plater with radially distributed plating solution |
| US5985123A (en) | 1997-07-09 | 1999-11-16 | Koon; Kam Kwan | Continuous vertical plating system and method of plating |
| WO1999016936A1 (en) * | 1997-09-30 | 1999-04-08 | Semitool, Inc. | Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
| US5897375A (en) | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6159354A (en) | 1997-11-13 | 2000-12-12 | Novellus Systems, Inc. | Electric potential shaping method for electroplating |
| US6156167A (en) | 1997-11-13 | 2000-12-05 | Novellus Systems, Inc. | Clamshell apparatus for electrochemically treating semiconductor wafers |
| US6027631A (en) | 1997-11-13 | 2000-02-22 | Novellus Systems, Inc. | Electroplating system with shields for varying thickness profile of deposited layer |
| US6004880A (en) | 1998-02-20 | 1999-12-21 | Lsi Logic Corporation | Method of single step damascene process for deposition and global planarization |
| US5976331A (en) | 1998-04-30 | 1999-11-02 | Lucent Technologies Inc. | Electrodeposition apparatus for coating wafers |
| US6071388A (en) | 1998-05-29 | 2000-06-06 | International Business Machines Corporation | Electroplating workpiece fixture having liquid gap spacer |
| US6074544A (en) | 1998-07-22 | 2000-06-13 | Novellus Systems, Inc. | Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer |
| US6132587A (en) | 1998-10-19 | 2000-10-17 | Jorne; Jacob | Uniform electroplating of wafers |
| US6176992B1 (en) | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| US6497800B1 (en) * | 2000-03-17 | 2002-12-24 | Nutool Inc. | Device providing electrical contact to the surface of a semiconductor workpiece during metal plating |
| US6251235B1 (en) * | 1999-03-30 | 2001-06-26 | Nutool, Inc. | Apparatus for forming an electrical contact with a semiconductor substrate |
| US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
| US6610190B2 (en) * | 2000-11-03 | 2003-08-26 | Nutool, Inc. | Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate |
| US7578923B2 (en) * | 1998-12-01 | 2009-08-25 | Novellus Systems, Inc. | Electropolishing system and process |
| US6902659B2 (en) * | 1998-12-01 | 2005-06-07 | Asm Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
| US6589105B2 (en) * | 1998-12-01 | 2003-07-08 | Nutool, Inc. | Pad tensioning method and system in a bi-directional linear polisher |
| US6103085A (en) | 1998-12-04 | 2000-08-15 | Advanced Micro Devices, Inc. | Electroplating uniformity by diffuser design |
| US6261426B1 (en) * | 1999-01-22 | 2001-07-17 | International Business Machines Corporation | Method and apparatus for enhancing the uniformity of electrodeposition or electroetching |
| US6066030A (en) | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
| US6136163A (en) * | 1999-03-05 | 2000-10-24 | Applied Materials, Inc. | Apparatus for electro-chemical deposition with thermal anneal chamber |
| JP3422731B2 (ja) * | 1999-07-23 | 2003-06-30 | 理化学研究所 | Ｅｌｉｄセンタレス研削装置 |
| US6653226B1 (en) * | 2001-01-09 | 2003-11-25 | Novellus Systems, Inc. | Method for electrochemical planarization of metal surfaces |
| US6848970B2 (en) * | 2002-09-16 | 2005-02-01 | Applied Materials, Inc. | Process control in electrochemically assisted planarization |
| US6482307B2 (en) * | 2000-05-12 | 2002-11-19 | Nutool, Inc. | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
| US6346479B1 (en) * | 2000-06-14 | 2002-02-12 | Advanced Micro Devices, Inc. | Method of manufacturing a semiconductor device having copper interconnects |
| US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
| US6696358B2 (en) * | 2001-01-23 | 2004-02-24 | Honeywell International Inc. | Viscous protective overlayers for planarization of integrated circuits |
| US7201829B2 (en) * | 2001-03-01 | 2007-04-10 | Novellus Systems, Inc. | Mask plate design |
| US6482656B1 (en) * | 2001-06-04 | 2002-11-19 | Advanced Micro Devices, Inc. | Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit |
| TW584899B (en) * | 2001-07-20 | 2004-04-21 | Nutool Inc | Planar metal electroprocessing |
-
2001
- 2001-01-17 US US09/760,757 patent/US6610190B2/en not_active Expired - Lifetime
- 2001-05-28 TW TW090112769A patent/TW511167B/zh not_active IP Right Cessation
- 2001-11-02 WO PCT/US2001/051158 patent/WO2002057514A2/en not_active Ceased
- 2001-11-02 EP EP01994521A patent/EP1332243A2/en not_active Withdrawn
- 2001-11-02 KR KR1020027008660A patent/KR100801270B1/ko not_active Expired - Fee Related
- 2001-11-02 CN CNB018044514A patent/CN1253608C/zh not_active Expired - Fee Related
- 2001-11-02 AU AU2002246910A patent/AU2002246910A1/en not_active Abandoned
- 2001-11-02 JP JP2002558562A patent/JP4034655B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-11 US US10/460,032 patent/US6942780B2/en not_active Expired - Lifetime
-
2005
- 2005-09-13 US US11/225,913 patent/US20060006060A1/en not_active Abandoned
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