CN1251562C - 复合叠片及其制造方法 - Google Patents

复合叠片及其制造方法 Download PDF

Info

Publication number
CN1251562C
CN1251562C CNB001337831A CN00133783A CN1251562C CN 1251562 C CN1251562 C CN 1251562C CN B001337831 A CNB001337831 A CN B001337831A CN 00133783 A CN00133783 A CN 00133783A CN 1251562 C CN1251562 C CN 1251562C
Authority
CN
China
Prior art keywords
raw cook
raw
composite laminate
particle aggregate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB001337831A
Other languages
English (en)
Other versions
CN1305339A (zh
Inventor
龟田裕和
中尾修也
黑田茂之
小嶋胜
田中谦次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CN1305339A publication Critical patent/CN1305339A/zh
Application granted granted Critical
Publication of CN1251562C publication Critical patent/CN1251562C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62625—Wet mixtures
    • C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/63456—Polyurethanes; Polyisocyanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/6346—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63448—Polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/63488—Polyethers, e.g. alkylphenol polyglycolether, polyethylene glycol [PEG], polyethylene oxide [PEO]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/653—Processes involving a melting step
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/042—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass in a direct manner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4688—Composite multilayer circuits, i.e. comprising insulating layers having different properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
    • B32B2315/08—Glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
    • C04B2235/9615—Linear firing shrinkage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C04B2237/525—Pre-treatment of the joining surfaces, e.g. cleaning, machining by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/64—Forming laminates or joined articles comprising grooves or cuts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/68—Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0183—Dielectric layers
    • H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249994—Composite having a component wherein a constituent is liquid or is contained within preformed walls [e.g., impregnant-filled, previously void containing component, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2848—Three or more layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

本发明提供一种复合叠层，该复合叠层包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层。在两个第一片层之间设置每个内部第二片层并且第二片层的两个外部片层构成复合叠层的两个主表面。内部第二片层的厚度大于外部第二片层的厚度。第一片层与第二片层通过包含在第一片层内的一部分第一微粒聚集体渗入第二片层互相结合。这样的结构能够减少复合叠层在煅烧步骤中的横向收缩。

Description

复合叠片及其制造方法
技术领域
本发明涉及复合叠片及其制造方法。特别是，本发明涉及在烧结期间收缩较小的叠片及其制造方法。
背景技术
近年来，在缩小芯片单元尺寸和减少其重量方面取得了进展。装配芯片单元的电路板也需要缩小尺寸和减少重量。由于玻璃陶瓷多层电路板允许高密度引线和厚度的减小，从而缩小尺寸和减少重量，所以玻璃陶瓷多层电路板被用来满足该需要。
玻璃陶瓷多层电路板一般通过烧结过程形成，并且在烧结期间它们在垂直于板的主面和平行于板的主面方向上发生纵向和横向收缩。因此当前的玻璃陶瓷多层电路板存在大约±0.5％的尺寸变化。包含装配所需电子单元的空腔的玻璃陶瓷多层电路板显示出明显的变化。
日本未审查专利申请公开Nos.5-102666和7-330445揭示了一种制造高精度尺寸的玻璃陶瓷多层电路板的方法。日本未审查专利申请公开No.6-329476揭示了一种制造包含空腔的玻璃陶瓷多层电路板的方法。在各种方法中，在玻璃陶瓷压实片烧结温度下不能烧结的生片被层叠在玻璃陶瓷压实片的一面或两面，并且在烧结之后去除生片的粉末化层。
在这样的过程中，需要另外的过程来去除粉末化层。而且难以同时烧结导电薄膜，在烧结过程中，该薄膜开始时形成于未烧结的玻璃陶瓷压实片上。在去除了粉末化层之后，最终的玻璃陶瓷多层电路板的表面粗糙度可能较大。
在日本未审查专利申请公开No.9-266363揭示的方法中，烧结玻璃陶瓷层与氧化铝层的叠层以仅仅烧结玻璃陶瓷层，从而使得玻璃陶瓷层包含的玻璃成分渗入未烧结的氧化铝层以结合氧化铝层。但是在这种方法中，玻璃陶瓷层内的玻璃成分并不会渗入整个氧化铝层。因此在形成电路图案的导电薄膜之前氧化铝层未结合部分被去除并且表面进行了抛光。
虽然在该方法中通过去除和抛光步骤减少了表面粗糙度，但是需要去除步骤并且无法通过同时烧结玻璃陶瓷层在电路板表面上形成导电薄膜。
在日本未审查专利申请公开No.5-136572揭示的方法中，未在玻璃陶瓷压实片的烧结温度下烧结的生片被堆叠在玻璃陶瓷压实片的一面或两面，从而仅仅烧结玻璃陶瓷压实片。树脂被加入未烧结生片的粉末化层。该方法无需去除未烧结粉末化层的步骤，但是需要将粉末加入未烧结粉末化层的步骤。
发明内容
因此本发明的目标是提供一种降低横向收缩并且尺寸精度高的复合叠层。
本发明的另一个目标是提供一种制造复合叠层的方法，它在烧结步骤之后无需后续步骤，例如去除步骤和树脂加入步骤。
按照本发明的第一方面，复合叠层包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层。在两个第一片层之间设置每个内部第二片层并且第二片层的两个外部片层构成复合叠层的两个主表面。内部第二片层的厚度大于外部第二片层的厚度。第一片层与第二片层通过包含在第一片层内的一部分第一微粒聚集体渗入第二片层互相结合。
比较好的是，内部第二片层的厚度大约是外部第二片层厚度的1.75～2.67倍。
比较好的是，第一片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
复合叠层可以进一步在其内部和外部的一处包含导电薄膜，其中第一片层、第二片层和导电薄膜构成电路板。
复合叠层可以进一步包含至少在一个主表面上具有开口的空腔。
按照本发明的第二方面，制造复合叠层的方法包括制备包含包括第一微粒聚集体的第一生片层和包含第二微粒聚集体的第二生片层的生片复合叠层的第一步骤，在熔化至少一部分第一微粒聚集体的温度下第二聚集体是不能烧结的，其中在两个第一生片层之间设置每个内部第二生片层，两个第二生片层构成生片复合叠层的两个主表面，并且层叠在生片复合叠层内部的第二生片层的厚度大于位于生片复合叠层主表面上的第二生片层的厚度；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合的第二步骤。
比较好的是，层叠在生片复合叠层内的第二生片层的厚度大约是生片复合叠层两个主表面上第二片层厚度的1.75～2.67倍。
比较好的是，第一步骤包括在每个第一生片上形成每个第二生片以构成多个第一生片复合备料的第一子步骤，将多个第一生片复合备料层叠以构成多个第二生片复合备料从而使得两个第一生片互相接触的第二子步骤，以及将多个第二生片复合备料层叠从而使两个第二生片互相接触的第三子步骤。
比较好的是，在第一步骤中，第一生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
按照本发明的第三方面，制造复合叠层的方法包括第一步骤，它包括如下子步骤：制备第一微粒聚集体，制备在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体，形成包含第一微粒聚集体的第一生片，在每个第一生片上形成包含第二微粒聚集体的第二生片以构成多个第一生片复合备料，以及层叠多个第一生片复合备料以形成生片复合叠层从而使得两个相邻第一生片构成每个第一生片层而两个相邻的第二生片构成每个第二生片层；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合的第二步骤。
比较好的是，第一生片不被包含在用于第一步骤中形成第二生片的浆料内的溶剂腐蚀。
比较好的是，在第一步骤中，第一生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
按照本发明的第四方面，制造复合叠层的方法包括第一步骤，它包括如下子步骤：制备第一微粒聚集体，制备在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体，形成包含第二微粒聚集体的第二生片，在每个第二生片上形成包含第一微粒聚集体的第一生片以构成多个第一生片复合备料，以及层叠多个第一生片复合备料以形成生片复合叠层从而使得两个相邻第一生片构成每个第一生片层而两个相邻的第二生片构成每个第二生片层；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合的第二步骤。
比较好的是，第二生片不被包含在用于第一步骤中形成第一生片的浆料内的溶剂腐蚀。
比较好的是，在第一步骤中，第一生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
本发明的复合叠层减小了横向收缩并且尺寸具有较高的精度。而且可以使用烧结步骤之后的复合叠层而无需其他步骤，例如去除步骤和树脂加入步骤。
当第一片层具有基本相同的厚度时，第一片层在烧结步骤中具有相同的横向收缩，并且第二片层抑制了横向收缩。因此抑制了横向收缩引起的缠绕和变形。
由于按照本发明的方法不包括第二片层的去除步骤和树脂加入步骤，所以可以同时烧结形成于复合叠层上的导电薄膜和复合叠层。
特别是，在普通具有空腔的复合叠层内很容易发生横向收缩和尺寸变化。但是即使在复合叠层具有空腔结构时，本发明的复合叠层减小了横向收缩和尺寸变化。
包含在第二片层内的第二颗粒聚集体可以具有任何性质，例如绝缘、介电、压电或磁性质。因此最终的复合叠层具有特定的电磁性质。这些性质经过适当组合可以制造例如L-C-R复合基片。当采用高度耐磨、高刚性的第二颗粒聚集体时，复合叠层可以具有较高的机械强度。当采用高反射或IR反射的第二颗粒聚集体时，复合叠层具有特定的光学功能。
附图说明
图1为按照本发明第一实施例的复合叠层的剖面图；
图2为按照本发明第二实施例的复合叠层的剖面图；
图3为按照本发明第三实施例的复合叠层的剖面图；
图4为按照本发明第四实施例的复合叠层的剖面图；
图5A-5D为制造按照本发明第一实施例的复合叠层的方法的剖面图；
图6A-6C为制造按照本发明第三实施例的复合叠层的方法的剖面图；以及
图7为制造按照本发明第四实施例的复合叠层的方法的剖面图。
具体实施方式
按照本发明的复合叠层具有各种较佳实施例。以下借助图1-4描述四种典型的实施例。在图1-4所示的实施例中，复合叠层包括第一片层2，每个由第一聚集体组成，还包括第二片层3a和3b，每个由第二颗粒聚集体组成。
参见图1，复合叠层1包括每个包括第一微粒聚集体的第一片层2和每个包含第二微粒聚集体的第二片层3a和3b。第一片层2与第二片层3a和3b交替堆叠在最外面的第一片层2的外表面以构成复合叠层1的两个主表面。在该实施例中，第二片层3a的厚度A大于第二片层3b的厚度B。第二片层3b的厚度C1-C4比较好的是大于第二片层3a的厚度A。而且第二片层3b的厚度C1-C4比较好的是相等的。
参见图2，复合叠层11包括图1所示的复合叠层1和位于其主表面上的导电薄膜4。导电薄膜4通过利用Ag涂胶的丝网印刷过程形成并且具有预先确定的图案。Ag涂胶可以用例如Ag-Pd涂胶、Ag-Pt涂胶、Cu涂胶或Ni涂胶代替。
参见图3，复合叠层21包括第一片层2和第二片层3a和3b。每个第一片层2包含导电薄膜5。每个导电薄膜具有预先确定的图案。
参见图4，复合叠层31包括开口位于主表面上的空腔6。空腔具有预先确定的深度和预先确定的横向尺寸。而且复合叠层31如同复合叠层11一样包括导电薄膜4。
在复合叠层1、11、21和31中，比较好的是，第一片层2内的第一微粒聚集体部分渗入第二片层3a和3b，从而使得第二微粒被第一片层材料完全结合。第二片层3a和3b的厚度比较好的是小于第一片层2的厚度以确保第一片层材料的渗入。
堆叠在复合叠层1、11、21和31内的第二片层3a的厚度大于堆叠在复合叠层1、11、21和31的主表面上的第二片层3b的厚度。如果第二片层3a的厚度较小，复合叠层1、11、21和31将在中心附近横向收缩。当堆叠在内部的第二片层3a的厚度足够大时，抑制了横向收缩引起的缠绕和变形。但是在这种情况下，第一微粒聚集体没有渗入第二片层3a和3b整体，所以片之间的结合力减小。当第二片层3a和3b的厚度过大时，为了产生稠密的玻璃陶瓷压实片必须增加烧结温度。堆叠在复合叠层1、11、21和31内部的第二片层3a的厚度比较好的是第二片层3b厚度的约1.75-2.67倍，或者比较好的是约2.0倍。
比较好的是，在复合叠层1、11、21和31内，第一片层2具有基本相同的厚度。在这种情况下，第一片层2在烧结步骤中的热收缩基本相同而第二片层3a和3b抑制了第一片层2的横向收缩，抑制了烧结的复合叠层1、11、21和31纵向和横向收缩引起的缠绕和变形。
比较好的是，第一片层2内的第一微粒聚集体包括玻璃而第二片层3a和3b内的第二微粒聚集体包括陶瓷粉末。第一片层2内的玻璃渗入第二片层3a和3b以使第二片层3a和3b更为稠密。
在提供导电薄膜4和/或5的复合叠层11、21和31中，这些导电薄膜4和/或5通过将粉末金属涂胶涂敷在生片主和/或内面并在生片烧结步骤中烧结涂胶而形成。
在图2中，导电薄膜4提供在复合叠层11的两个主表面上。导电薄膜4也可以仅仅形成于复合叠层11的一个主表面上。导电薄膜4的位置也没有限制。在图3中，提供在复合叠层21内部的导电薄膜5的位置和数量没有限制。在图4中，导电薄膜4和5的位置和数量可以在具有空腔6的复合叠层31内有所改变。在复合叠层31内导电薄膜4和5也可以省略。这些复合片可以包含链接不同层上形成的导电薄膜的过孔和/或通孔。
以下借助图5A-5D、6A-6C和7描述按照本发明的制造图1、3和4所示复合叠层1、21和31的方法。
以下借助图5A-5D描述图1所示复合叠层1的制造方法。利用包含第二微粒聚集体的浆料形成生片，并且在生片上利用包含第一微粒聚集体的浆料形成另一片。按照预定尺寸切割层叠片以形成第一生片复合备料1a，如图5A所示，每个包括包含第二微粒聚集体的第二生片13b和位于第二生片13b之上的包含第一微粒聚集体的第一生片12a。
参见图5B，层叠两个第一生片复合备料1a以形成第二生片复合备料1b从而利用压力将第一生片12a互相结合。结合的第一生片12a组合形成第一生片层12。
参见图5C，层叠两个第二生片复合备料1b以形成生片复合单元1c从而利用压力将第二生片13b互相结合。结合的第二生片13b组合形成第二生片层13a。
参见图5D，层叠两个生片复合单元1c以形成生片复合叠层从而利用压力将第二生片13b互相结合。结合的生片复合叠层烧结形成图1所示的复合叠层1。
以下借助图6A-6C描述图3所示复合叠层21的制造方法。具有与图5A-5D中相同功能的单元用同样的标号表示，并且不再赘述。
参见图6A，在图5A所示的第一生片复合备料1a的第一生片12a上形成导电薄膜15以构成第一生片复合备料21a。由于导电薄膜15具有预定的图案，所以第一生片12a可以部分暴露在第一生片复合备料21a的主表面上。
参见图6B，另一第一生片复合备料1a和第一生片复合备料21a层叠形成第二生片复合备料21b从而使两个第一生片12a通过压力经导电薄膜15互相结合起来。两个第一生片12a结合形成包含导电薄膜15的第一生片层12。
参见图6C，两个第二生片复合备料21b层叠形成生片复合单元21c从而通过压力使第二生片13b互相结合。两个生片13b结合形成第二生片层13a。
两个生片复合单元21c层叠构成生片复合叠层从而通过压力使两个第二生片13b互相结合。生片复合叠层经过烧结形成图3所示的复合叠层21。
以下借助图7描述复合叠层31的制造方法。具有与图5A-5D和图6A-6C中相同功能的单元用同样的标号表示，并且不再赘述。
制备图6C所示的生片复合单元21c。通过利用导电涂胶在生片复合单元21c的主表面上印制形成导电薄膜14。在提供导电薄膜14的主表面上具有开口的空腔16通过钻孔形成以构成生片复合单元31a。
图6C所示的生片复合单元31a和生片复合单元21c层叠形成生片复合叠层从而通过压力使两个第二生片13b结合。生片复合叠层经过烧结形成图4所示的复合叠层31。
在图5A和6A中，第一生片12a形成于第二生片13b之上以构成第一生片复合备料1a和21a。而第二生片13b也可以形成于第一生片12a之上。
第一生片12a和第二生片13b可以通过刮浆过程、照相凹板过程、浸渍过程、喷雾过程、碾压过程、薄膜形成过程或粉末压缩过程形成。
当在第一生片上形成第二生片时，比较好的是第一生片对于用于形成第二生片的溶剂是耐腐蚀的。例如当第一生片12a形成于第二生片13b上时，第二生片13b对于用于形成第一生片12a的浆料的溶剂是耐腐蚀的。如果第一生片对溶剂是不耐腐蚀的，则第一生片将溶解在第二生片包含的溶剂内，则第二生片将不能令人满意地层叠。
在图5A-5D和6A-6C所示的方法中，导电薄膜5形成于第一生片12a之上。但是导电薄膜15的位置和形状并不局限于上述实施例的情况。例如导电薄膜可以形成于图5A所示第一生片复合备料1a的第二生片13b上。
图1-4示出了复合叠层。由于包含在第一片层2内的第一微粒聚集体在烧结期间部分渗入第二片层3a和3b，所以如图1-4所示，第一片层2与第二片层3a和3b之间的边界并不总是明显的。
实例
制备了7个复合叠层1以测量横向收缩因子，其中层叠在复合叠层1内的第二片层3a和形成于复合叠层1主表面上的第二片层3b具有不同的厚度。
包括第二微粒聚集体的第二浆料通过混合和弥散100份重量的作为第二微粒的粒径为0.5微米的氧化铝粉末、45份重量的作为弥散剂的水、50份重量的作为另一弥散剂的聚乙烯乙二醇和15份重量的作为粘合剂的尿烷树脂乳化液制备。第二浆料可以包含可塑剂、去泡沫剂和增粘剂。
在去除泡沫之后，通过照相凹板过程在聚乙烯酯(PET)薄膜上涂敷和干燥第二浆料以形成生片作为第二生片，每个的厚度为1.0、1.5、2.0或4.0微米。在干燥步骤期间尿烷树脂乳化液被转换为不溶于水的凝胶体。因此这些生片是耐水性的浆料。
包括第一微粒聚集体的第一浆料通过混合和弥散60份重量的作为第一微粒的粒径为3.0微米的B-Si-Ca-Al-O基玻璃、40份重量的作为第一微粒的粒径为0.5微米的氧化铝粉末、36份重量的作为弥散剂的水，1份重量的聚亚烃基乙醇作为另一弥散剂和12份重量的作为粘合剂的尿烷树脂乳化液制备。第一浆料可以包含可塑剂、去泡沫剂和增粘剂。
第一浆料涂敷在作为第二生片的每个生片的主表面以形成厚度75微米的作为第一生片的生片。第一生片复合片由此制备。
两个第一生片复合片在60℃和2000kgf/cm2下层叠以形成第二生片复合片从而使得第一生片互相结合。在该步骤中，厚度为75微米的两个第一生片通过压力结合以构成厚度为140微米的第一生片。
三个第二生片复合片在60℃和100kgf/cm2下层叠从而使得第二生片通过压力互相结合。复合片被切割为100mm×100mm的正方形以构成生片复合叠层。在该步骤中，相邻的两个第二生片结合以构成第二生片层。
当层叠在复合叠层内部的第二生片层的厚度为2.0微米时，厚度为1.0微米的两个第二生片结合起来。当第二生片层厚度为3.0微米时，两个厚度为1.5微米的第二生片结合起来。当第二生片层厚度为3.5微米时，厚度为1.5微米和2.0微米的两个第二生片结合起来。当第二生片层厚度为4.0微米时，两个厚度为2.0微米的第二生片结合起来。
为比较起见，通过制备6个生片形成厚度为420微米的叠层(样品编号8)，每个生片的厚度为75微米，利用第一浆料在60℃和100kgf/cm2压力下层叠6个生片并且切割为100mm×100mm。
最终的生片复合叠层(样品编号1-7)和生片叠层(样品编号8)在700-1000℃的温度范围内烧结，例如在850℃下空气中烧结2小时以形成复合叠层(样品编号1-7)和叠层(样品编号8)。在样品编号1-7中，包含在第一微粒聚集体和第二微粒聚集体内的氧化铝微粒在烧结步骤中未烧结，而包含在第一微粒聚集体内的玻璃粉末熔化并从第一片层渗入第二片层。在冷却之后，熔化的玻璃固化以使第一片层与第二片层粘合。
在样品Nos.1-7中，测量了形成于复合叠层内部的第二片层(表1中称为“内层”)的厚度、形成于主面上的第二片层(表1中称为“外层”)的厚度以及横向收缩因子。在样品No.8中，测量了横向收缩因子。结果示于表1中。
在“评价”栏中，A表示样品具有较小的横向收缩因子和高的尺寸精度，B表示样品具有较小的横向收缩因子和平均尺寸精度，而C表示样品具有较大的横向收缩因子和较差的尺寸精度。
在样品Nos.1-7中，为了抑制纵向收缩，提供了第二片层。在烧结期间，纵向收缩使得第一生片层的厚度从140微米减小至100微米。表1示出了样品Nos.1-7中复合叠层和样品8中叠层的总厚度。在烧结期间第二生片层基本上不发生纵向收缩。
                                              表1
  试样   复合叠层体的整体厚度   第二片层力   ②/①   烧成温度(℃)   横向收缩率(％)   评估
  烧结前(μm)   烧结后(μm)   ①第二片层的外部层   ②第二片层的内部层
  1   420   300   2.0   4.0   2.00   850   0.3   ◎
  2   420   310   2.0   2.0   1.00   850   2.3   ×
  3   420   300   4.0   4.0   1.00   900   0.3   ×
  4   420   305   2.0   3.0   1.50   850   1.4   ○
  5   420   300   2.0   3.5   1.75   850   0.5   ◎
  6   420   305   1.0   4.0   4.00   850   1.1   ○
  7   420   300   1.5   4.0   2.67   850   0.4   ◎
  8   420   375   -   -   -   850   11.0   ×
注意：表1中的烧结温度表示的是玻璃渗入第二片层并形成稠密的叠层的最小温度。
第二片层在烧结期间不发生横向收缩并且厚度不因烧结而变化。
如表1所示，样品1、4、5、6和7中的每一个的内部第二片层与外部第二片层的厚度之比大于1.0，可以在850℃下烧结，并且横向收缩因子在0.3％-1.4％范围内。相反，样品8的横向收缩因子高达11.0％。
特别是，样品1、5和7中的每一个的比值在1.75-2.67之间，可以在850℃下烧结，并且横向收缩因子特别小，在0.3％-0.5％范围内。因此这些复合片具有较高的尺寸精度。
在850℃下烧结的样品No.2的横向收缩因子为2.3％，是样品No4的两倍。该复合片的尺寸精度不令人满意。
样品No.3的横向收缩因子为0.3％，但是无法在850℃下烧结而是必须在900℃下烧结。
包含在第一片层内的第一微粒聚集体和包含在第二片层内的第二微粒聚集体可以是MgO、ZrO2、SiO2、TiO2、BaTiO3、SrTiO3、MgO3、Fe2O3、、RuO、(Zr，Ti)O3、B4C、SiC和/或WC。

Claims (19)

1.一种包含两个主外表面层和多个夹在其中的内部层的复合叠层，其特征在于包含：
至少两个第一片层，每个包含第一微粒聚集体；以及
至少三个第二片层，每个包含第二微粒聚集体；
其中两个第二片层构成复合叠层的两个外部主表面，每个内部第二片层设置在两个第一片层之间，内部第二片层的厚度大于外部第二片层的厚度，并且第一片层的一部分第一微粒聚集体渗入第二片层并且使第一片层与第二片层结合。
2.如权利要求1所述的复合叠层，其特征在于内部第二片层的厚度是外部第二片层厚度的1.75～2.67倍。
3.如权利要求1所述的复合叠层，其特征在于每个第一片层具有相同的厚度。
4.如权利要求3所述的复合叠层，其特征在于第一微粒聚集体包含粉末化玻璃而第二微粒聚集体包含粉末化陶瓷。
5.如权利要求4所述的复合叠层，其特征在于进一步包括导电薄膜，从而使得第一片层、第二片层和导电薄膜构成电路板。
6.如权利要求5所述的复合叠层，其特征在于进一步包含至少在一个主表面上具有开口的空腔。
7.一种制造复合叠层的方法，其特征在于包括：
制备包括第一微粒聚集体的第一生片层和包含第二微粒聚集体的第二生片层的生片复合叠层，其中在熔化至少一部分第一微粒聚集体的温度下第二微粒聚集体是不可烧结的，并且其中两个第二生片层设置为构成生片复合叠层的两个主表面，并且其他第二生片层放置在两个第一生片层之间，并且层叠在生片复合叠层内部的第二生片层的厚度大于位于生片复合叠层主表面上的第二生片层的厚度；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合。
8.如权利要求7所述的制造复合叠层的方法，其特征在于层叠在生片复合叠层内的第二生片层的厚度是生片复合叠层两个主表面上第二生片层厚度的1.75～2.67倍。
9.如权利要求7所述的制造复合叠层的方法，其特征在于进一步包括：
提供多个第一生片复合备料，每个第一生片复合备料包含在第一生片上的第二生片；
将多个第一生片复合备料层叠从而使得第一生片互相接触以构成多个第二生片复合备料；以及
将多个第二生片复合备料层叠从而使两个第二生片互相接触。
10.如权利要求7所述的制造复合叠层的方法，其特征在于生片复合叠层中每个第一生片层的厚度相同。
11.如权利要求7所述的制造复合叠层的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
12.一种制造复合叠层的方法，其特征在于包括：
提供第一微粒聚集体；
提供在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体；
形成包含第一微粒聚集体的第一生片；
在每个第一生片上形成包含第二微粒聚集体的第二生片以构成多个第一生片复合备料；以及
层叠多个第一生片复合备料从而使得两个相邻的第一生片构成每个第一生片层而两个第二生片相邻而构成每个第二生片层以形成生片复合叠层；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合。
13.如权利要求12所述的制造复合叠层的方法，其特征在于第一聚集体包含微粒和溶剂，并且第二聚集体对于该溶剂是耐腐蚀的。
14.如权利要求12所述的制造复合叠层的方法，其特征在于每个第一生片层在烧结之前的厚度相同。
15.如权利要求12所述的制造复合聚集体的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
16.一种制造复合叠层的方法，其特征在于包括：
提供第一微粒聚集体；
提供在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体；
形成包含第二微粒聚集体的第二生片；
在每个第二生片上形成包含第一微粒聚集体的第一生片以构成多个第一生片复合备料；以及
层叠多个第一生片复合备料从而使得两个相邻的第一生片构成每个第一生片层而两个第二生片相邻而构成每个第二生片层以形成生片复合叠层；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一生片层内的一部分第一微粒聚集体熔化和渗入第二生片层以使第一生片层与第二生片层结合。
17.如权利要求16所述制造复合叠层的方法，其特征在于第一聚集体包含微粒和溶剂，并且第二聚集体对于该溶剂是耐腐蚀的。
18.如权利要求16所述的制造复合叠层的方法，其特征在于每个第一生片层在烧结之前的厚度相同。
19.如权利要求16所述的制造复合聚集体的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
CNB001337831A 1999-10-28 2000-10-30 复合叠片及其制造方法 Expired - Lifetime CN1251562C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30780399A JP3554962B2 (ja) 1999-10-28 1999-10-28 複合積層体およびその製造方法
JP307803/1999 1999-10-28
JP307803/99 1999-10-28

Publications (2)

Publication Number Publication Date
CN1305339A CN1305339A (zh) 2001-07-25
CN1251562C true CN1251562C (zh) 2006-04-12

Family

ID=17973422

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB001337831A Expired - Lifetime CN1251562C (zh) 1999-10-28 2000-10-30 复合叠片及其制造方法

Country Status (6)

Country Link
US (3) US6579392B1 (zh)
EP (1) EP1096558B1 (zh)
JP (1) JP3554962B2 (zh)
KR (1) KR100375862B1 (zh)
CN (1) CN1251562C (zh)
DE (1) DE60027385T2 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936381B2 (en) * 1998-10-30 2011-05-03 Canon Kabushiki Kaisha Management and setting of photographing condition of image sensing apparatus
JP3633435B2 (ja) * 2000-04-10 2005-03-30 株式会社村田製作所 多層セラミック基板、その製造方法および設計方法、ならびに電子装置
JP3757788B2 (ja) * 2000-11-27 2006-03-22 株式会社村田製作所 多層セラミック基板およびその製造方法
JP2002368422A (ja) * 2001-04-04 2002-12-20 Murata Mfg Co Ltd 多層セラミック基板及びその製造方法
JP2002368420A (ja) * 2001-06-05 2002-12-20 Murata Mfg Co Ltd ガラスセラミック多層基板の製造方法およびガラスセラミック多層基板
US6743534B2 (en) * 2001-10-01 2004-06-01 Heraeus Incorporated Self-constrained low temperature glass-ceramic unfired tape for microelectronics and methods for making and using the same
JP3716783B2 (ja) * 2001-11-22 2005-11-16 株式会社村田製作所 セラミック多層基板の製造方法及び半導体装置
DE10252636A1 (de) * 2002-11-11 2004-05-19 Epcos Ag Keramisches Vielschichtsubstrat und Verfahren zu dessen Herstellung
JP4687333B2 (ja) * 2005-08-29 2011-05-25 株式会社村田製作所 多層セラミック基板およびその製造方法
DE102006000935B4 (de) * 2006-01-05 2016-03-10 Epcos Ag Monolithisches keramisches Bauelement und Verfahren zur Herstellung
KR100807316B1 (ko) 2006-11-14 2008-02-28 주식회사 삼전 전류-전압 발생용 적층형 압전소자의 구조
KR101515680B1 (ko) * 2008-10-20 2015-04-27 스카이워크스 솔루션즈, 인코포레이티드 자성-유전 조립체 및 그 제조방법
KR100983125B1 (ko) * 2008-10-28 2010-09-17 삼성전기주식회사 다층 세라믹 기판의 제조방법
WO2017187753A1 (ja) 2016-04-28 2017-11-02 株式会社村田製作所 多層セラミック基板

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563900A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Multilyaer ceramic circuit board
DE3522703A1 (de) * 1985-06-25 1987-01-08 Leitron Leiterplatten Leiterplatte mit keramischen chip-traeger-material
JPH0648666B2 (ja) * 1987-09-29 1994-06-22 三菱マテリアル株式会社 積層セラミックコンデンサ及びその製法
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
KR100200902B1 (ko) * 1990-09-19 1999-06-15 가나이 쓰도무 다층세라믹 소결체 및 그 제조방법
US5254191A (en) * 1990-10-04 1993-10-19 E. I. Du Pont De Nemours And Company Method for reducing shrinkage during firing of ceramic bodies
EP0535711A3 (en) * 1991-10-04 1993-12-01 Matsushita Electric Ind Co Ltd Method for producing multilayered ceramic substrate
JP2803414B2 (ja) 1991-11-15 1998-09-24 松下電器産業株式会社 多層セラミック基板の製造方法
JP2785544B2 (ja) 1991-10-04 1998-08-13 松下電器産業株式会社 多層セラミック基板の製造方法
DE69328390T2 (de) * 1992-05-20 2000-12-07 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines mehrlagigen Substrats
JPH05335183A (ja) * 1992-05-28 1993-12-17 Murata Mfg Co Ltd 多層基板を備えた電子部品及びその製造方法
US5470412A (en) * 1992-07-30 1995-11-28 Sumitomo Metal Ceramics Inc. Process for producing a circuit substrate
US5456778A (en) * 1992-08-21 1995-10-10 Sumitomo Metal Ceramics Inc. Method of fabricating ceramic circuit substrate
JP3003413B2 (ja) * 1992-09-21 2000-01-31 松下電器産業株式会社 多層セラミック基板の製造方法
US5632942A (en) * 1993-05-24 1997-05-27 Industrial Technoology Research Institute Method for preparing multilayer ceramic/glass substrates with electromagnetic shielding
JP2955442B2 (ja) 1993-05-25 1999-10-04 株式会社住友金属エレクトロデバイス セラミックス回路基板の製造方法
JPH07312511A (ja) * 1994-05-19 1995-11-28 Matsushita Electric Ind Co Ltd マイクロ波用多層複合基板およびその製造方法
JP2973820B2 (ja) 1994-06-10 1999-11-08 住友金属工業株式会社 セラミックス基板の製造方法
JP3961033B2 (ja) 1995-02-27 2007-08-15 京セラ株式会社 積層ガラス−セラミック回路基板
WO1996039298A1 (en) * 1995-06-06 1996-12-12 Sarnoff Corporation Method for the reduction of lateral shrinkage in multilayer circuit boards on a support
JPH0992983A (ja) * 1995-07-17 1997-04-04 Sumitomo Kinzoku Electro Device:Kk セラミック多層基板の製造方法
US5740603A (en) * 1995-07-31 1998-04-21 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing low dielectric constant multiple layer ceramic circuit board
US5708570A (en) * 1995-10-11 1998-01-13 Hughes Aircraft Company Shrinkage-matched circuit package utilizing low temperature co-fired ceramic structures
US6042667A (en) * 1996-03-13 2000-03-28 Sumotomo Metal Electronics Devices, Inc. Method of fabricating ceramic multilayer substrate
JP3780386B2 (ja) 1996-03-28 2006-05-31 株式会社村田製作所 セラミック回路基板及びその製造方法
US6241838B1 (en) * 1997-09-08 2001-06-05 Murata Manufacturing Co., Ltd. Method of producing a multi-layer ceramic substrate
JP3601671B2 (ja) * 1998-04-28 2004-12-15 株式会社村田製作所 複合積層体の製造方法
US6228196B1 (en) * 1998-06-05 2001-05-08 Murata Manufacturing Co., Ltd. Method of producing a multi-layer ceramic substrate
JP2961230B1 (ja) * 1998-07-13 1999-10-12 工業技術院長 金属超微粒子分散体及びその製造方法
US6592696B1 (en) * 1998-10-09 2003-07-15 Motorola, Inc. Method for fabricating a multilayered structure and the structures formed by the method
US6139666A (en) * 1999-05-26 2000-10-31 International Business Machines Corporation Method for producing ceramic surfaces with easily removable contact sheets
US6245185B1 (en) * 1999-07-15 2001-06-12 International Business Machines Corporation Method of making a multilayer ceramic product with thin layers
JP3601679B2 (ja) * 1999-07-27 2004-12-15 株式会社村田製作所 複合積層体の製造方法
JP3666321B2 (ja) * 1999-10-21 2005-06-29 株式会社村田製作所 多層セラミック基板およびその製造方法

Also Published As

Publication number Publication date
EP1096558A2 (en) 2001-05-02
US6984441B2 (en) 2006-01-10
CN1305339A (zh) 2001-07-25
JP2001121640A (ja) 2001-05-08
EP1096558A3 (en) 2004-09-22
US6579392B1 (en) 2003-06-17
US20060046040A1 (en) 2006-03-02
US20030159770A1 (en) 2003-08-28
DE60027385D1 (de) 2006-05-24
DE60027385T2 (de) 2006-11-09
KR100375862B1 (ko) 2003-03-15
JP3554962B2 (ja) 2004-08-18
EP1096558B1 (en) 2006-04-19
KR20010067367A (ko) 2001-07-12

Similar Documents

Publication Publication Date Title
CN1251562C (zh) 复合叠片及其制造方法
JP3601671B2 (ja) 複合積層体の製造方法
CN101416570B (zh) 多层陶瓷基板及其制造方法以及电子器件
CN1183815C (zh) 玻璃陶瓷多层基板的制造方法
JP6402829B2 (ja) 多層セラミック基板および多層セラミック基板の製造方法
CN1662116A (zh) 多层陶瓷基板及其制造方法
CN1167080C (zh) 导电膏、陶瓷多层基底,以及用于制造陶瓷多层基底的方法
JP5324247B2 (ja) 積層セラミックコンデンサ
JPH0634435B2 (ja) 電子回路用多層基板
JP2011204849A (ja) 積層セラミック電子部品の製造方法
KR101188770B1 (ko) 저온 소결 세라믹 재료, 저온 소결 세라믹 소결체 및 다층 세라믹 기판
JP4968411B2 (ja) 積層セラミック電子部品の製造方法
JP2006237493A (ja) 配線基板
CN1179845C (zh) 复合叠层板的制造方法
JP2007053294A (ja) 積層型セラミック電子部品の製造方法
JP4844317B2 (ja) セラミック電子部品およびその製造方法
KR101781201B1 (ko) 고온 동시소성 세라믹을 포함하는 다층회로 기판
JP4610185B2 (ja) 配線基板並びにその製造方法
JP2003273515A (ja) セラミックの低温焼結の間の収縮を低減するための方法および抑制層
WO2019009208A1 (ja) 放熱基板及びその製造方法
CN1581388A (zh) 多层陶瓷电容器及其制备方法
JP4423025B2 (ja) 多層基板及びその製造方法
JP2009231301A (ja) 多層セラミック基板およびその製造方法
JP2004342683A (ja) 多層セラミック基板の製造方法
KR20130036446A (ko) 저온동시소성세라믹스 기판의 제조방법

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20060412

CX01 Expiry of patent term