CN1305339A - 复合叠片及其制造方法 - Google Patents

复合叠片及其制造方法 Download PDF

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Publication number
CN1305339A
CN1305339A CN00133783A CN00133783A CN1305339A CN 1305339 A CN1305339 A CN 1305339A CN 00133783 A CN00133783 A CN 00133783A CN 00133783 A CN00133783 A CN 00133783A CN 1305339 A CN1305339 A CN 1305339A
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China
Prior art keywords
raw
lamella
composite laminate
particle aggregate
raw cook
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CN00133783A
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CN1251562C (zh
Inventor
龟田裕和
中尾修也
黑田茂之
小嶋胜
田中谦次
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
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    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract

本发明提供一种复合叠层,该复合叠层包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层。在两个第一片层之间设置每个内部第二片层并且第二片层的两个外部片层构成复合叠层的两个主表面。内部第二片层的厚度大于外部第二片层的厚度。第一片层与第二片层通过包含在第一片层内的一部分第一微粒聚集体渗入第二片层互相结合。这样的结构能够减少复合叠层在煅烧步骤中的横向收缩。

Description

复合叠片及其制造方法
本发明涉及复合叠片及其制造方法。特别是，本发明涉及在烧结期间收缩较小的叠片及其制造方法。
近年来，在缩小芯片单元尺寸和减少其重量方面取得了进展。装配芯片单元的电路板也需要缩小尺寸和减少重量。由于玻璃陶瓷多层电路板允许高密度引线和厚度的减小，从而缩小尺寸和减少重量，所以玻璃陶瓷多层电路板被用来满足该需要。
玻璃陶瓷多层电路板一般通过烧结过程形成，并且在烧结期间它们在垂直于板的主面和平行于板的主面方向上发生纵向和横向收缩。因此当前的玻璃陶瓷多层电路板存在大约±0.5％的尺寸变化。包含装配所需电子单元的空腔的玻璃陶瓷多层电路板显示出明显的变化。
日本未审查专利申请公开Nos.5-102666和7-330445揭示了一种制造高精度尺寸的玻璃陶瓷多层电路板的方法。日本未审查专利申请公开No.6-329476揭示了一种制造包含空腔的玻璃陶瓷多层电路板的方法。在各种方法中，在玻璃陶瓷压实片烧结温度下不能烧结的生片被层叠在玻璃陶瓷压实片的一面或两面，并且在烧结之后去除生片的粉末化层。
在这样的过程中，需要另外的过程来去除粉末化层。而且难以同时烧结导电薄膜，在烧结过程中，该薄膜开始时形成于未烧结的玻璃陶瓷压实片上。在去除了粉末化层之后，最终的玻璃陶瓷多层电路板的表面粗糙度可能较大。
在日本未审查专利申请公开No.9-266363揭示的方法中，烧结玻璃陶瓷层与氧化铝层的叠层以仅仅烧结玻璃陶瓷层，从而使得玻璃陶瓷层包含的玻璃成分渗入未烧结的氧化铝层以结合氧化铝层。但是在这种方法中，玻璃陶瓷层内的玻璃成分并不会渗入整个氧化铝层。因此在形成电路图案的导电薄膜之前氧化铝层未结合部分被去除并且表面进行了抛光。
虽然在该方法中通过去除和抛光步骤减少了表面粗糙度，但是需要去除步骤并且无法通过同时烧结玻璃陶瓷层在电路板表面上形成导电薄膜。
在日本未审查专利申请公开No.5-136572揭示的方法中，未在玻璃陶瓷压实片的烧结温度下烧结的生片被堆叠在玻璃陶瓷压实片的一面或两面，从而仅仅烧结玻璃陶瓷压实片。树脂被加入未烧结生片的粉末化层。该方法无需去除未烧结粉末化层的步骤，但是需要将粉末加入未烧结粉末化层的步骤。
因此本发明的目标是提供一种降低横向收缩并且尺寸精度高的复合叠层。
本发明的另一个目标是提供一种制造复合叠层的方法，它在烧结步骤之后无需后续步骤，例如去除步骤和树脂加入步骤。
按照本发明的第一方面，复合叠层包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层。在两个第一片层之间设置每个内部第二片层并且第二片层的两个外部片层构成复合叠层的两个主表面。内部第二片层的厚度大于外部第二片层的厚度。第一片层与第二片层通过包含在第一片层内的一部分第一微粒聚集体渗入第二片层互相结合。
比较好的是，内部第二片层的厚度大约是外部第二片层厚度的1.75～2.67倍。
比较好的是，第一片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
复合叠层可以进一步在其内部和外部的一处包含导电薄膜，其中第一片层、第二片层和导电薄膜构成电路板。
复合叠层可以进一步包含至少在一个主表面上具有开口的空腔。
按照本发明的第二方面，制造复合叠层的方法包括制备包含包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层的生片复合叠层的第一步骤，在熔化至少一部分第一微粒聚集体的温度下第二聚集体是不能烧结的，其中在两个第一片层之间设置每个内部第二片层，两个第二片层构成生片复合叠层的两个主表面，并且层叠在生片复合叠层内部的第二片层的厚度大于位于生片复合叠层主表面上的第二片层的厚度；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合的第二步骤。
比较好的是，层叠在生片复合叠层内的第二片层的厚度大约是生片复合叠层两个主表面上第二片层厚度的1.75～2.67倍。
比较好的是，第一步骤包括在每个第一生片层上形成每个第二生片层以构成多个第一生片复合备料的第一子步骤，将多个第一生片复合备料层叠以构成多个第二生片复合备料从而使得两个第一生片互相接触的第二子步骤，以及将多个第二生片复合备料层叠从而使两个第二生片互相接触的第三子步骤。
另一方法是，第一步骤包括在每个第二生片层上形成每个第一生片层以构成多个第一生片复合备料的第一子步骤，将多个第一生片复合备料层叠以构成多个第二生片复合备料从而使得两个第二生片互相接触的第二子步骤，以及将多个第二生片复合备料层叠从而使两个第一生片互相接触的第三子步骤。
比较好的是，在第一步骤中，第一片生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
按照本发明的第三方面，制造复合叠层的方法包括第一步骤，它包括如下子步骤：制备第一微粒聚集体，制备在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体，形成包含第一微粒聚集体的第一生片，在每个第一生片层上形成包含第二微粒聚集体的第二生片以构成多个第一生片复合备料，以及层叠多个第一生片复合备料以形成生片复合叠层从而使得两个相邻第一生片构成每个第一生片层而两个相邻的第二生片层构成每个第二生片层；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合的第二步骤。
比较好的是，第一生片不被包含在用于第一步骤中形成第二生片的浆料内的溶剂腐蚀。
比较好的是，在第一步骤中，第一片生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
按照本发明的第四方面，制造复合叠层的方法包括第一步骤，它包括如下子步骤：制备第一微粒聚集体，制备在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体，形成包含第二微粒聚集体的第二生片，在每个第二生片层上形成包含第一微粒聚集体的第一生片以构成多个第一生片复合备料，以及层叠多个第一生片复合备料以形成生片复合叠层从而使得两个相邻第一生片构成每个第一生片层而两个相邻的第二生片层构成每个第二生片层；以及在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合的第二步骤。
比较好的是，第二生片不被包含在用于第一步骤中形成第一生片的浆料内的溶剂腐蚀。
比较好的是，在第一步骤中，第一片生片层具有基本相同的厚度。
比较好的是，第一微粒聚集体包含玻璃作为主成分而第二微粒聚集体包含粉末化陶瓷作为主成分。
本发明的复合叠层减小了横向收缩并且尺寸具有较高的精度。而且可以使用烧结步骤之后的复合叠层而无需其他步骤，例如去除步骤和树脂加入步骤。
当第一片层具有基本相同的厚度时，第一片层在烧结步骤中具有相同的横向收缩，并且第二片层抑制了横向收缩。因此抑制了横向收缩引起的缠绕和变形。
由于按照本发明的方法不包括第二片层的去除步骤和树脂加入步骤，所以可以同时烧结形成于复合叠层上的导电薄膜和复合叠层。
特别是，在普通具有空腔的复合叠层内很容易发生横向收缩和尺寸变化。但是即使在复合叠层具有空腔结构时，本发明的复合叠层减小了横向收缩和尺寸变化。
包含在第二片层内的第二颗粒聚集体可以具有任何性质，例如绝缘、介电、压电或磁性质。因此最终的复合叠层具有特定的电磁性质。这些性质经过适当组合可以制造例如L-C-R复合基片。当采用高度耐磨、高刚性的第二颗粒聚集体时，复合叠层可以具有较高的机械强度。当采用高反射或IR反射的第二颗粒聚集体时，复合叠层具有特定的光学功能。
图1为按照本发明第一实施例的复合叠层的剖面图；
图2为按照本发明第二实施例的复合叠层的剖面图；
图3为按照本发明第三实施例的复合叠层的剖面图；
图4为按照本发明第四实施例的复合叠层的剖面图；
图5A-5D为制造按照本发明第一实施例的复合叠层的方法的剖面图；
图6A-6C为制造按照本发明第三实施例的复合叠层的方法的剖面图；以及
图7为制造按照本发明第四实施例的复合叠层的方法的剖面图。
按照本发明的复合叠层具有各种较佳实施例。以下借助图1-4描述四种典型的实施例。在图1-4所示的实施例中，复合叠层包括第一片层2，每个由第一聚集体组成，还包括第二片层3a和3b，每个由第二颗粒聚集体组成。
参见图1，复合叠层1包括每个包括第一微粒聚集体的第一片层2和每个包含第二微粒聚集体的第二片层3a和3b。第一片层2与第二片层3a和3b交替堆叠在最外面的第一片层2的外表面以构成复合叠层1的两个主表面。在该实施例中，第二片层3a的厚度A大于第二片层3b的厚度B。第二片层3b的厚度C1-C4比较好的是大于第二片层3a的厚度A。而且第二片层3b的厚度C1-C4比较好的是相等的。
参见图2，复合叠层11包括图1所示的复合叠层1和位于其主表面上的导电薄膜4。导电薄膜4通过利用Ag涂胶的丝网印刷过程形成并且具有预先确定的图案。Ag涂胶可以用例如Ag-Pd涂胶、Ag-Pt涂胶、Cu涂胶或Ni涂胶代替。
参见图3，复合叠层21包括第一片层2和第二片层3a和3b。每个第一片层2包含导电薄膜5。每个导电薄膜具有预先确定的图案。
参见图4，复合叠层31包括开口位于主表面上的空腔6。空腔具有预先确定的深度和预先确定的横向尺寸。而且复合叠层31如同复合叠层11一样包括导电薄膜4。
在复合叠层1、11、21和31中，比较好的是，第一片层2内的第一微粒聚集体部分渗入第二片层3a和3b，从而使得第二微粒被第一片层材料完全结合。第二片层3a和3b的厚度比较好的是小于第一片层2的厚度以确保第一片层材料的渗入。
堆叠在复合叠层1、11、21和31内的第二片层3a的厚度大于堆叠在复合叠层1、11、21和31的主表面上的第二片层3b的厚度。如果第二片层3a的厚度较小，复合叠层1、11、21和31将在中心附近横向收缩。当堆叠在内部的第二片层3a的厚度足够大时，抑制了横向收缩引起的缠绕和变形。但是在这种情况下，第一微粒聚集体没有渗入第二片层3a和3b整体，所以片之间的结合力减小。当第二片层3a和3b的厚度过大时，为了产生稠密的玻璃陶瓷压实片必须增加烧结温度。堆叠在复合叠层1、11、21和31内部的第二片层3a的厚度比较好的是第二片层3b厚度的约1.75-2.67倍，或者比较好的是约2.0倍。
比较好的是，在复合叠层1、11、21和31内，第一片层2具有基本相同的厚度。在这种情况下，第一片层2在烧结步骤中的热收缩基本相同而第二片层3a和3b抑制了第一片层2的横向收缩，抑制了烧结的复合叠层1、11、21和31纵向和横向收缩引起的缠绕和变形。
比较好的是，第一片层2内的第一微粒聚集体包括玻璃而第二片层3a和3b内的第二微粒聚集体包括陶瓷粉末。第一片层2内的玻璃渗入第二片层3a和3b以使第二片层3a和3b更为稠密。
在提供导电薄膜4和/或5的复合叠层11、21和31中，这些导电薄膜4和/或5通过将粉末金属涂胶涂敷在生片主和/或内面并在生片烧结步骤中烧结涂胶而形成。
在图2中，导电薄膜4提供在复合叠层11的两个主表面上。导电薄膜4也可以仅仅形成于复合叠层11的一个主表面上。导电薄膜4的位置也没有限制。在图3中，提供在复合叠层21内部的导电薄膜5的位置和数量没有限制。在图4中，导电薄膜4和5的位置和数量可以在具有空腔6的复合叠层31内有所改变。在复合叠层31内导电薄膜4和5也可以省略。这些复合片可以包含链接不同层上形成的导电薄膜的过孔和/或通孔。
以下借助图5A-5D、6A-6C和7描述按照本发明的制造图1、3和4所示复合叠层1、21和31的方法。
以下借助图5A-5D描述图1所示复合叠层1的制造方法。利用包含第二微粒聚集体的浆料形成生片，并且在生片上利用包含第一微粒聚集体的浆料形成另一片。按照预定尺寸切割层叠片以形成第一生片复合备料1a，如图5A所示，每个包括包含第二微粒聚集体的第二生片13b和位于第二生片13b之上的包含第一微粒聚集体的第一生片12a。
参见图5B，层叠两个第一生片复合备料1a以形成第二生片复合备料1b从而利用压力将第一生片12a互相结合。结合的第一生片12a组合形成第一生片层12。
参见图5C，层叠两个第二生片复合备料1b以形成生片复合单元1c从而利用压力将第二生片13b互相结合。结合的第二生片13b组合形成第二生片层13a。
参见图5D，层叠两个生片复合单元1c以形成生片复合叠层从而利用压力将第二生片13b互相结合。结合的生片复合叠层烧结形成图1所示的复合叠层1。
以下借助图6A-6C描述图3所示复合叠层21的制造方法。具有与图5A-5D中相同功能的单元用同样的标号表示，并且不再赘述。
参见图6A，在图5A所示的第一生片复合备料1a的第一生片12a上形成导电薄膜15以构成第一生片复合备料21a。由于导电薄膜15具有预定的图案，所以第一生片12a可以部分暴露在第一生片复合备料21a的主表面上。
参见图6B，另一第一生片复合备料1a和第一生片复合备料21a层叠形成第二生片复合备料21b从而使两个第一生片12a通过压力经导电薄膜15互相结合起来。两个第一生片12a结合形成包含导电薄膜15的第一生片层12。
参见图6C，两个第二生片复合备料21b层叠形成生片复合单元21c从而通过压力使第二生片13b互相结合。两个生片13b结合形成第二生片层13a。
两个生片复合单元21c层叠构成生片复合叠层从而通过压力使两个第二生片13b互相结合。生片复合叠层经过烧结形成图3所示的复合叠层21。
以下借助图7描述复合叠层31的制造方法。具有与图5A-5D和图6A-6C中相同功能的单元用同样的标号表示，并且不再赘述。
制备图6C所示的生片复合单元21c。通过利用导电涂胶在生片复合单元21c的主表面上印制形成导电薄膜14。在提供导电薄膜14的主表面上具有开口的空腔16通过钻孔形成以构成生片复合单元31a。
图6C所示的生片复合单元31a和生片复合单元21c层叠形成生片复合叠层从而通过压力使两个第二生片13b结合。生片复合叠层经过烧结形成图4所示的复合叠层31。
在图5A和6A中，第一生片12a形成于第二生片13b之上以构成第一生片复合备料1a和21a。而第二生片13b也可以形成于第一生片12a之上。
第一生片12a和第二生片13b可以通过刮浆过程、照相凹板过程、浸渍过程、喷雾过程、碾压过程、薄膜形成过程或粉末压缩过程形成。
当在第一生片上形成第二生片时，比较好的是第一生片对于用于形成第二生片的溶剂是耐腐蚀的。例如当第一生片12a形成于第二生片13b上时，第二生片13b对于用于形成第一生片12a的浆料的溶剂是耐腐蚀的。如果第一生片对溶剂是不耐腐蚀的，则第一生片将溶解在第二生片包含的溶剂内，则第二生片将不能令人满意地层叠。
在图5A-5D和6A-6C所示的方法中，导电薄膜5形成于第一生片12a之上。但是导电薄膜15的位置和形状并不局限于上述实施例的情况。例如导电薄膜可以形成于图5A所示第一生片复合备料1a的第二生片13b上。
图1-4示出了复合叠层。由于包含在第一片层2内的第一微粒聚集体在烧结期间部分渗入第二片层3a和3b，所以如图1-4所示，第一片层2与第二片层3a和3b之间的边界并不总是明显的。
实例
制备了7个复合叠层1以测量横向收缩因子，其中层叠在复合叠层1内的第二片层3a和形成于复合叠层1主表面上的第二片层3b具有不同的厚度。
包括第二微粒聚集体的第二浆料通过混合和弥散100份重量的作为第二微粒的粒径为0.5微米的氧化铝粉末、45份重量的作为弥散剂的水、50份重量的作为另一弥散剂的聚乙烯乙二醇和15份重量的作为粘合剂的尿烷树脂乳化液制备。第二浆料可以包含可塑剂、去泡沫剂和增粘剂。
在去除泡沫之后，通过照相凹板过程在聚乙烯酯(PET)薄膜上涂敷和干燥第二浆料以形成生片作为第二生片，每个的厚度为1.0、1.5、2.0或4.0微米。在干燥步骤期间尿烷树脂乳化液被转换为不溶于水的凝胶体。因此这些生片是耐水性的浆料。
包括第一微粒聚集体的第一浆料通过混合和弥散60份重量的作为第一微粒的粒径为3.0微米的B-Si-Ca-Al-O基玻璃、40份重量的作为第一微粒的粒径为0.5微米的氧化铝粉末、36份重量的作为弥散剂的水，1份重量的聚亚烃基乙醇作为另一弥散剂和12份重量的作为粘合剂的尿烷树脂乳化液制备。第一浆料可以包含可塑剂、去泡沫剂和增粘剂。
第一浆料涂敷在作为第二生片的每个生片的主表面以形成厚度75微米的作为第一生片的生片。第一生片复合片由此制备。
两个第一生片复合片在60℃和2000kgf/cm2下层叠以形成第二生片复合片从而使得第一生片互相结合。在该步骤中，厚度为75微米的两个第一生片通过压力结合以构成厚度为140微米的第一生片。
三个第二生片复合片在60℃和100kgf/cm2下层叠从而使得第二生片通过压力互相结合。复合片被切割为100mm×100mm的正方形以构成生片复合叠层。在该步骤中，相邻的两个第二生片结合以构成第二生片层。
当层叠在复合叠层内部的第二生片层的厚度为2.0微米时，厚度为1.0微米的两个第二生片结合起来。当第二生片层厚度为3.0微米时，两个厚度为1.5微米的第二生片结合起来。当第二生片层厚度为3.5微米时，厚度为1.5微米和2.0微米的两个第二生片结合起来。当第二生片层厚度为4.0微米时，两个厚度为2.0微米的第二生片结合起来。
为比较起见，通过制备6个生片形成厚度为420微米的叠层(样品编号8)，每个生片的厚度为75微米，利用第一浆料在60℃和100kgf/cm2压力下层叠6个生片并且切割为100mm×100mm。
最终的生片复合叠层(样品编号1-7)和生片叠层(样品编号8)在700-1000℃的温度范围内烧结，例如在850℃下空气中烧结2小时以形成复合叠层(样品编号1-7)和叠层(样品编号8)。在样品编号1-7中，包含在第一微粒聚集体和第二微粒聚集体内的氧化铝微粒在烧结步骤中未烧结，而包含在第一微粒聚集体内的玻璃粉末熔化并从第一片层渗入第二片层。在冷却之后，熔化的玻璃固化以使第一片层与第二片层粘合。
在样品Nos.1-7中，测量了形成于复合叠层内部的第二片层(表1中称为“内层”)的厚度、形成于主面上的第二片层(表1中称为“外层”)的厚度以及横向收缩因子。在样品No.8中，测量了横向收缩因子。结果示于表1中。
在“评价”栏中，A表示样品具有较小的横向收缩因子和高的尺寸精度，B表示样品具有较小的横向收缩因子和平均尺寸精度，而C表示样品具有较大的横向收缩因子和较差的尺寸精度。
在样品Nos.1-7中，为了抑制纵向收缩，提供了第二片层。在烧结期间，纵向收缩使得第一生片层的厚度从140微米减小至100微米。表1示出了样品Nos.1-7中复合叠层和样品8中叠层的总厚度。在烧结期间第二生片层基本上不发生纵向收缩。
                             表1
    试样   复合叠层体的整体厚度         第二片层力 ②/① 烧成温度(℃)    横向收缩率(％) 评估
 烧结前(μm)    烧结后(μm) ①第二片层的外部层 ②第二片层的内部层
    1   420     300     2.0     4.0     2.00     850     0.3     ◎
    2   420     310     2.0     2.0     1.00     850     2.3     ×
    3   420     300     4.0     4.0     1.00     900     0.3     ×
    4   420     305     2.0     3.0     1.50     850     1.4     ○
    5   420     300     2.0     3.5     1.75     850     0.5     ◎
    6   420     305     1.0     4.0     4.00     850     1.1     ○
    7   420     300     1.5     4.0     2.67     850     0.4     ◎
    8   420     375     -     -     -     850     11.0     ×
注意：表1中的烧结温度表示的是玻璃渗入第二片层并形成稠密的叠层的最小温度。
第二片层在烧结期间不发生横向收缩并且厚度不因烧结而变化。
如表1所示，样品1、4、5、6和7中的每一个的内部第二片层与外部第二片层的厚度之比大于1.0，可以在850℃下烧结，并且横向收缩因子在0.3％-1.4％范围内。相反，样品8的横向收缩因子高达11.0％。
特别是，样品1、5和7中的每一个的比值在1.75-2.67之间，可以在850℃下烧结，并且横向收缩因子特别小，在0.3％-0.5％范围内。因此这些复合片具有较高的尺寸精度。
在850℃下烧结的样品No.2的横向收缩因子为2.3％，是样品No4的两倍。该复合片的尺寸精度不令人满意。
样品No.3的横向收缩因子为0.3％，但是无法在850℃下烧结而是必须在900℃下烧结。
包含在第一片层内的第一微粒聚集体和包含在第二片层内的第二微粒聚集体可以是MgO、ZrO2、SiO2、TiO2、BaTiO3、SrTiO3、MgO3、Fe2O3、RuO、(Zr，Ti)O3、B4C、SiC和/或WC。

Claims (20)

1.一种包含两个主外表面层和多个夹在其中的内部层的复合叠层，其特征在于包含：
至少两个第一片层，每个包含第一第一微粒聚集体；以及
至少三个第二片层，每个包含第二微粒聚集体；
其中两个第二片层构成复合叠层的两个外部主表面，每个内部第二片层设置在两个第一片层之间，内部第二片层的厚度大于外部第二片层的厚度，并且第一片层的一部分第一微粒聚集体渗入第二片层并且使第一片层与第二片层结合。
2.如权利要求1所述的复合叠层，其特征在于内部第二片层的厚度大约是外部第二片层厚度的1.75～2.67倍。
3.如权利要求1所述的复合叠层，其特征在于每个第一片层具有基本相同的厚度。
4.如权利要求3所述的复合叠层，其特征在于第一微粒聚集体包含粉末化玻璃而第二微粒聚集体包含粉末化陶瓷。
5.如权利要求4所述的复合叠层，其特征在于以进一步导电薄膜，从而使得第一片层、第二片层和导电薄膜构成电路板。
6.如权利要求5所述的复合叠层，其特征在于进一步包含至少在一个主表面上具有开口的空腔。
7.一种制造复合叠层的方法，其特征在于包括：
制备包括第一微粒聚集体的第一片层和包含第二微粒聚集体的第二片层的生片复合叠层，在熔化至少一部分第一微粒聚集体的温度下第二聚集体是不能烧结的，其中两个第二片层设置为构成构成生片复合叠层的两个主表面，并且第二生片层放置在两个第一生片层之间，并且层叠在生片复合叠层内部的第二片层的厚度大于位于生片复合叠层主表面上的第二片层的厚度；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合。
8.如权利要求7所述的制造复合叠层的方法，其特征在于层叠在生片复合叠层内的第二片层的厚度大约是生片复合叠层两个主表面上第二片层厚度的1.75～2.67倍。
9.如权利要求7所述的制造复合叠层的方法，其特征在于进一步包括：
在第一生片层上提供每个包含第二生片层的多个第一生片复合备料；
将多个第一生片复合备料层叠从而使得第一生片互相接触以构成多个第二生片复合备料；以及
将多个第二生片复合备料层叠从而使两个第二生片互相接触。
10.如权利要求7所述的制造复合叠层的方法，其特征在于进一步包含：
在第一生片层上提供每个包含第二生片层的多个第一生片复合备料；
将多个第一生片复合备料层叠从而使得两个第二生片互相接触以构成多个第二生片复合备料；以及
将多个第二生片复合备料层叠从而使两个第一生片互相接触。
11.如权利要求7所述的制造复合叠层的方法，其特征在于生片叠层中每个第一片生片层的厚度基本相同。
12.如权利要求7所述的制造复合叠层的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
13.一种制造复合叠层的方法，其特征在于包括：
提供第一微粒聚集体；
提供在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体；
形成包含第一微粒聚集体的第一生片；
在每个第一生片层上形成包含第二微粒聚集体的第二生片以构成多个第一生片复合备料；以及
层叠多个第一生片复合备料从而使得两个相邻的第一生片构成每个第一生片层而两个第二生片层相邻而构成每个第二生片层以形成生片复合叠层；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合。
14.如权利要求13所述的制造复合叠层的方法，其特征在于第一聚集体包含微粒和第二微粒不被腐蚀的溶剂。
15.如权利要求13所述的制造复合叠层的方法，其特征在于每个第一生片层在烧结之前的厚度基本相同。
16.如权利要求13所述的制造复合聚集体的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
17.一种制造复合叠层的方法，其特征在于包括：
提供第一微粒聚集体；
提供在熔化至少一部分第一微粒聚集体的温度下不能烧结的第二微粒聚集体；
形成包含第二微粒聚集体的第二生片；
在每个第二生片层上形成包含第一微粒聚集体的第一生片以构成多个第一生片复合备料；以及
层叠多个第一生片复合备料从而使得两个相邻的第一生片构成每个第一生片层而两个第二生片层相邻而构成每个第二生片层以形成生片复合叠层；以及
在能够熔化部分第一微粒聚集体但是不能够烧结第二微粒聚集体的温度下烧结生片复合叠层从而使包含在第一片层内的一部分第一微粒聚集体熔化和渗入第二片层以使第一片层与第二片层结合。
18.如权利要求17所述制造复合叠层的方法，其特征在于第一聚集体包含微粒和第二微粒不被腐蚀的溶剂。
19.如权利要求17所述的制造复合叠层的方法，其特征在于每个第一生片层在烧结之前的厚度基本相同。
20.如权利要求17所述的制造复合聚集体的方法，其特征在于第一微粒聚集体包含玻璃而第二微粒聚集体包含粉末化陶瓷。
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7936381B2 (en) * 1998-10-30 2011-05-03 Canon Kabushiki Kaisha Management and setting of photographing condition of image sensing apparatus
JP3633435B2 (ja) * 2000-04-10 2005-03-30 株式会社村田製作所 多層セラミック基板、その製造方法および設計方法、ならびに電子装置
JP3757788B2 (ja) * 2000-11-27 2006-03-22 株式会社村田製作所 多層セラミック基板およびその製造方法
JP2002368422A (ja) * 2001-04-04 2002-12-20 Murata Mfg Co Ltd 多層セラミック基板及びその製造方法
JP2002368420A (ja) * 2001-06-05 2002-12-20 Murata Mfg Co Ltd ガラスセラミック多層基板の製造方法およびガラスセラミック多層基板
JP4160901B2 (ja) * 2001-10-01 2008-10-08 ヘラエウス インコーポレイテッド マイクロエレクトロニクス用自己拘束型非焼結低温ガラスセラミックテープ及びその製法ならびに用途
JP3716783B2 (ja) * 2001-11-22 2005-11-16 株式会社村田製作所 セラミック多層基板の製造方法及び半導体装置
DE10252636A1 (de) * 2002-11-11 2004-05-19 Epcos Ag Keramisches Vielschichtsubstrat und Verfahren zu dessen Herstellung
JP4687333B2 (ja) * 2005-08-29 2011-05-25 株式会社村田製作所 多層セラミック基板およびその製造方法
DE102006000935B4 (de) * 2006-01-05 2016-03-10 Epcos Ag Monolithisches keramisches Bauelement und Verfahren zur Herstellung
KR100807316B1 (ko) 2006-11-14 2008-02-28 주식회사 삼전 전류-전압 발생용 적층형 압전소자의 구조
KR101515680B1 (ko) * 2008-10-20 2015-04-27 스카이워크스 솔루션즈, 인코포레이티드 자성-유전 조립체 및 그 제조방법
KR100983125B1 (ko) * 2008-10-28 2010-09-17 삼성전기주식회사 다층 세라믹 기판의 제조방법
CN109076709B (zh) 2016-04-28 2021-01-22 株式会社村田制作所 多层陶瓷基板

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563900A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Multilyaer ceramic circuit board
DE3522703A1 (de) * 1985-06-25 1987-01-08 Leitron Leiterplatten Leiterplatte mit keramischen chip-traeger-material
JPH0648666B2 (ja) * 1987-09-29 1994-06-22 三菱マテリアル株式会社 積層セラミックコンデンサ及びその製法
US5102720A (en) * 1989-09-22 1992-04-07 Cornell Research Foundation, Inc. Co-fired multilayer ceramic tapes that exhibit constrained sintering
KR100200902B1 (ko) * 1990-09-19 1999-06-15 가나이 쓰도무 다층세라믹 소결체 및 그 제조방법
US5254191A (en) * 1990-10-04 1993-10-19 E. I. Du Pont De Nemours And Company Method for reducing shrinkage during firing of ceramic bodies
JP2785544B2 (ja) 1991-10-04 1998-08-13 松下電器産業株式会社 多層セラミック基板の製造方法
JP2803414B2 (ja) 1991-11-15 1998-09-24 松下電器産業株式会社 多層セラミック基板の製造方法
EP0535711A3 (en) * 1991-10-04 1993-12-01 Matsushita Electric Ind Co Ltd Method for producing multilayered ceramic substrate
US5370759A (en) * 1992-05-20 1994-12-06 Matsushita Electric Industrial Co., Ltd. Method for producing multilayered ceramic substrate
JPH05335183A (ja) * 1992-05-28 1993-12-17 Murata Mfg Co Ltd 多層基板を備えた電子部品及びその製造方法
US5470412A (en) * 1992-07-30 1995-11-28 Sumitomo Metal Ceramics Inc. Process for producing a circuit substrate
US5456778A (en) * 1992-08-21 1995-10-10 Sumitomo Metal Ceramics Inc. Method of fabricating ceramic circuit substrate
JP3003413B2 (ja) * 1992-09-21 2000-01-31 松下電器産業株式会社 多層セラミック基板の製造方法
US5632942A (en) * 1993-05-24 1997-05-27 Industrial Technoology Research Institute Method for preparing multilayer ceramic/glass substrates with electromagnetic shielding
JP2955442B2 (ja) 1993-05-25 1999-10-04 株式会社住友金属エレクトロデバイス セラミックス回路基板の製造方法
JPH07312511A (ja) * 1994-05-19 1995-11-28 Matsushita Electric Ind Co Ltd マイクロ波用多層複合基板およびその製造方法
JP2973820B2 (ja) 1994-06-10 1999-11-08 住友金属工業株式会社 セラミックス基板の製造方法
JP3961033B2 (ja) 1995-02-27 2007-08-15 京セラ株式会社 積層ガラス−セラミック回路基板
WO1996039298A1 (en) * 1995-06-06 1996-12-12 Sarnoff Corporation Method for the reduction of lateral shrinkage in multilayer circuit boards on a support
JPH0992983A (ja) * 1995-07-17 1997-04-04 Sumitomo Kinzoku Electro Device:Kk セラミック多層基板の製造方法
US5740603A (en) * 1995-07-31 1998-04-21 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing low dielectric constant multiple layer ceramic circuit board
US5708570A (en) * 1995-10-11 1998-01-13 Hughes Aircraft Company Shrinkage-matched circuit package utilizing low temperature co-fired ceramic structures
US6042667A (en) * 1996-03-13 2000-03-28 Sumotomo Metal Electronics Devices, Inc. Method of fabricating ceramic multilayer substrate
JP3780386B2 (ja) 1996-03-28 2006-05-31 株式会社村田製作所 セラミック回路基板及びその製造方法
US6241838B1 (en) * 1997-09-08 2001-06-05 Murata Manufacturing Co., Ltd. Method of producing a multi-layer ceramic substrate
JP3601671B2 (ja) * 1998-04-28 2004-12-15 株式会社村田製作所 複合積層体の製造方法
US6228196B1 (en) * 1998-06-05 2001-05-08 Murata Manufacturing Co., Ltd. Method of producing a multi-layer ceramic substrate
JP2961230B1 (ja) * 1998-07-13 1999-10-12 工業技術院長 金属超微粒子分散体及びその製造方法
US6592696B1 (en) * 1998-10-09 2003-07-15 Motorola, Inc. Method for fabricating a multilayered structure and the structures formed by the method
US6139666A (en) * 1999-05-26 2000-10-31 International Business Machines Corporation Method for producing ceramic surfaces with easily removable contact sheets
US6245185B1 (en) * 1999-07-15 2001-06-12 International Business Machines Corporation Method of making a multilayer ceramic product with thin layers
JP3601679B2 (ja) * 1999-07-27 2004-12-15 株式会社村田製作所 複合積層体の製造方法
JP3666321B2 (ja) * 1999-10-21 2005-06-29 株式会社村田製作所 多層セラミック基板およびその製造方法

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