CN1226105A - 半导体集成电路中信号配线启动速度的改进 - Google Patents
半导体集成电路中信号配线启动速度的改进 Download PDFInfo
- Publication number
- CN1226105A CN1226105A CN99101832A CN99101832A CN1226105A CN 1226105 A CN1226105 A CN 1226105A CN 99101832 A CN99101832 A CN 99101832A CN 99101832 A CN99101832 A CN 99101832A CN 1226105 A CN1226105 A CN 1226105A
- Authority
- CN
- China
- Prior art keywords
- shielding
- shielding conductor
- integrated circuit
- holding wire
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 230000004913 activation Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 claims description 120
- 238000009826 distribution Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 239000000872 buffer Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 7
- 102220588436 Keratin, type I cytoskeletal 18_S31A_mutation Human genes 0.000 description 6
- 102220475340 DNA replication licensing factor MCM2_S41A_mutation Human genes 0.000 description 5
- 102220621241 Proline-rich membrane anchor 1_S32A_mutation Human genes 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 102220588433 Keratin, type I cytoskeletal 18_S42A_mutation Human genes 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Logic Circuits (AREA)
- Dc Digital Transmission (AREA)
Abstract
Description
信号线 | 输出状态① | 输出状态② |
F1 | 低 | 低 |
F2 | 高 | 低 |
F3 | 低 | 低 |
F4 | 低 | 高 |
F5 | 低 | 低 |
屏蔽线 | 输出状态① | 输出状态② |
S1 | 高 | 低 |
S2 | 高 | 低 |
S3 | 低 | 高 |
S4 | 低 | 高 |
信号线 | 输出状态③ | 输出状态② |
F1 | 低 | 低 |
F2 | 低 | 低 |
F3 | 高 | 低 |
F4 | 低 | 高 |
F5 | 低 | 低 |
屏蔽线 | 输出状态③ | 输出状态② |
S1 | 高 | 低 |
S2 | 高 | 低 |
S3 | 低 | 高 |
S4 | 低 | 高 |
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12331/98 | 1998-01-26 | ||
JP12331/1998 | 1998-01-26 | ||
JP01233198A JP3157765B2 (ja) | 1998-01-26 | 1998-01-26 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1226105A true CN1226105A (zh) | 1999-08-18 |
CN1160855C CN1160855C (zh) | 2004-08-04 |
Family
ID=11802335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB99101832XA Expired - Fee Related CN1160855C (zh) | 1998-01-26 | 1999-01-26 | 信号线启动速度提高的半导体集成电路及其中提高信号线启动速度的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6285208B1 (zh) |
JP (1) | JP3157765B2 (zh) |
KR (1) | KR19990068125A (zh) |
CN (1) | CN1160855C (zh) |
TW (1) | TW429681B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365810C (zh) * | 2005-03-15 | 2008-01-30 | 李奕权 | 漫射和镭射光电偶合的集成电路信号线 |
CN112685990A (zh) * | 2019-10-18 | 2021-04-20 | 美光科技公司 | 包含屏蔽件的信号线布局以及相关方法、装置和系统 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3476403B2 (ja) * | 1999-11-24 | 2003-12-10 | Necエレクトロニクス株式会社 | 半導体回路、その遅延調整方法及びそのレイアウト方法 |
JP2002043515A (ja) * | 2000-07-24 | 2002-02-08 | Mitsubishi Electric Corp | シールド回路および集積回路 |
US6657460B2 (en) * | 2001-01-23 | 2003-12-02 | Primarion, Inc. | Spatially filtered data bus drivers and receivers and method of operating same |
JP2003086684A (ja) * | 2001-09-12 | 2003-03-20 | Mitsubishi Electric Corp | 半導体装置 |
JP3639241B2 (ja) * | 2001-10-11 | 2005-04-20 | 株式会社東芝 | 半導体装置 |
US6653857B2 (en) * | 2001-10-31 | 2003-11-25 | Sun Microsystems, Inc. | Increasing implicit decoupling capacitance using asymmetric shieldings |
US6628138B2 (en) * | 2001-11-30 | 2003-09-30 | Sun Microsystems, Inc. | Increasing decoupling capacitance using preferential shields |
JP4037116B2 (ja) * | 2002-01-28 | 2008-01-23 | 松下電器産業株式会社 | 遅延調整回路装置、これを用いた半導体集積回路装置および遅延調整方法 |
US6563336B1 (en) * | 2002-02-06 | 2003-05-13 | Sun Microsystems, Inc. | Signal shielding assignment technique for precharge based logic |
US7155695B2 (en) * | 2002-02-06 | 2006-12-26 | Sun Microsystems, Inc. | Signal shielding technique using active shields for non-interacting driver design |
US6842042B2 (en) * | 2002-09-11 | 2005-01-11 | Lsi Logic Corporation | Global chip interconnect |
JP2004178704A (ja) * | 2002-11-27 | 2004-06-24 | Renesas Technology Corp | 半導体回路装置 |
US7308662B2 (en) * | 2005-06-15 | 2007-12-11 | International Business Machines Corporation | Capacitance modeling |
JP7009813B2 (ja) * | 2017-07-27 | 2022-01-26 | セイコーエプソン株式会社 | 振動デバイス、電子機器及び移動体 |
KR102497114B1 (ko) * | 2020-03-31 | 2023-02-07 | 주식회사 에이올코리아 | 공기순환장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59212027A (ja) * | 1983-05-18 | 1984-11-30 | Toshiba Corp | 半導体集積回路の出力回路 |
JPS62214714A (ja) * | 1986-03-15 | 1987-09-21 | Fujitsu Ltd | ノイズ対策回路を備えたlsi装置 |
JPS6378394A (ja) | 1986-09-19 | 1988-04-08 | Fujitsu Ltd | プリチヤ−ジクロツク発生回路 |
JPH04196226A (ja) | 1990-11-27 | 1992-07-16 | Mitsubishi Electric Corp | 半導体集積回路 |
JPH0582646A (ja) | 1991-09-20 | 1993-04-02 | Fujitsu Ltd | クロストークノイズ防止機能を備えた半導体回路 |
JPH0590939A (ja) | 1991-09-30 | 1993-04-09 | Sanyo Electric Co Ltd | 半導体回路 |
US5306967A (en) * | 1992-05-29 | 1994-04-26 | Integrated Device Technology, Inc. | Apparatus for improving signal transmission along parallel lines |
JP3178932B2 (ja) * | 1993-03-02 | 2001-06-25 | 富士通株式会社 | 半導体集積回路装置 |
US5714904A (en) * | 1994-06-06 | 1998-02-03 | Sun Microsystems, Inc. | High speed serial link for fully duplexed data communication |
JPH08306867A (ja) | 1995-05-11 | 1996-11-22 | Yamaha Corp | 半導体集積回路 |
JPH09237870A (ja) | 1996-03-01 | 1997-09-09 | Hitachi Ltd | 信号線駆動装置 |
JPH09307061A (ja) | 1996-05-16 | 1997-11-28 | Rohm Co Ltd | 集積回路装置 |
-
1998
- 1998-01-26 JP JP01233198A patent/JP3157765B2/ja not_active Expired - Fee Related
-
1999
- 1999-01-05 TW TW088100092A patent/TW429681B/zh not_active IP Right Cessation
- 1999-01-12 US US09/229,018 patent/US6285208B1/en not_active Expired - Lifetime
- 1999-01-26 CN CNB99101832XA patent/CN1160855C/zh not_active Expired - Fee Related
- 1999-01-26 KR KR1019990002359A patent/KR19990068125A/ko not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100365810C (zh) * | 2005-03-15 | 2008-01-30 | 李奕权 | 漫射和镭射光电偶合的集成电路信号线 |
CN112685990A (zh) * | 2019-10-18 | 2021-04-20 | 美光科技公司 | 包含屏蔽件的信号线布局以及相关方法、装置和系统 |
Also Published As
Publication number | Publication date |
---|---|
TW429681B (en) | 2001-04-11 |
JPH11214629A (ja) | 1999-08-06 |
JP3157765B2 (ja) | 2001-04-16 |
CN1160855C (zh) | 2004-08-04 |
KR19990068125A (ko) | 1999-08-25 |
US6285208B1 (en) | 2001-09-04 |
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Legal Events
Date | Code | Title | Description |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030328 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030328 Address after: Kawasaki, Kanagawa, Japan Applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: RENESAS KANSAI CO., LTD. Free format text: FORMER NAME: NEC CORP. |
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CP01 | Change in the name or title of a patent holder |
Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC Corp. |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040804 Termination date: 20140126 |