CN1202723A - 制备有金属硅化物膜的半导体器件的方法 - Google Patents
制备有金属硅化物膜的半导体器件的方法 Download PDFInfo
- Publication number
- CN1202723A CN1202723A CN98109731A CN98109731A CN1202723A CN 1202723 A CN1202723 A CN 1202723A CN 98109731 A CN98109731 A CN 98109731A CN 98109731 A CN98109731 A CN 98109731A CN 1202723 A CN1202723 A CN 1202723A
- Authority
- CN
- China
- Prior art keywords
- film
- titanium
- metal
- semiconductor substrate
- metal silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000010936 titanium Substances 0.000 claims abstract description 60
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 7
- 150000002367 halogens Chemical class 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 31
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims description 30
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 23
- 239000003595 mist Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP118461/97 | 1997-05-08 | ||
JP118461/1997 | 1997-05-08 | ||
JP09118461A JP3129232B2 (ja) | 1997-05-08 | 1997-05-08 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1202723A true CN1202723A (zh) | 1998-12-23 |
CN1108630C CN1108630C (zh) | 2003-05-14 |
Family
ID=14737237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98109731A Expired - Fee Related CN1108630C (zh) | 1997-05-08 | 1998-05-08 | 制备有金属硅化物膜的半导体器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6204170B1 (zh) |
JP (1) | JP3129232B2 (zh) |
CN (1) | CN1108630C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372063C (zh) * | 2002-07-02 | 2008-02-27 | 日本电气株式会社 | Ⅲ族氮化物半导体衬底及其生产工艺 |
CN101304843B (zh) * | 2005-10-14 | 2013-01-09 | 六号元素(产品)(控股)公司 | 制造改性磨料复合片的方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4366805B2 (ja) * | 2000-01-24 | 2009-11-18 | 東京エレクトロン株式会社 | 埋め込み方法 |
US6441434B1 (en) * | 2000-03-31 | 2002-08-27 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator body-source contact and method |
US6525381B1 (en) | 2000-03-31 | 2003-02-25 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator body-source contact using shallow-doped source, and method |
KR100407684B1 (ko) * | 2000-06-28 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100578221B1 (ko) * | 2004-05-06 | 2006-05-12 | 주식회사 하이닉스반도체 | 확산방지막을 구비하는 반도체소자의 제조 방법 |
KR100630695B1 (ko) | 2004-08-04 | 2006-10-02 | 삼성전자주식회사 | 반도체 메모리 소자의 제조 방법 |
US7388248B2 (en) * | 2004-09-01 | 2008-06-17 | Micron Technology, Inc. | Dielectric relaxation memory |
US7575959B2 (en) | 2004-11-26 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US20060197088A1 (en) * | 2005-03-07 | 2006-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP5352081B2 (ja) * | 2006-12-20 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP5211503B2 (ja) * | 2007-02-16 | 2013-06-12 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP4650440B2 (ja) * | 2007-03-07 | 2011-03-16 | 東京エレクトロン株式会社 | 成膜方法 |
JP6823533B2 (ja) | 2017-04-24 | 2021-02-03 | 東京エレクトロン株式会社 | チタンシリサイド領域を形成する方法 |
US10475654B2 (en) | 2017-08-31 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wrap-around contact plug and method manufacturing same |
US10662522B1 (en) * | 2018-11-08 | 2020-05-26 | Sandisk Technologies Llc | Thermal metal chemical vapor deposition process |
US10978354B2 (en) | 2019-03-15 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selective dual silicide formation |
US11233134B2 (en) | 2019-12-19 | 2022-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field effect transistors with dual silicide contact structures |
US11489057B2 (en) | 2020-08-07 | 2022-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contact structures in semiconductor devices |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4619038A (en) * | 1985-08-15 | 1986-10-28 | Motorola, Inc. | Selective titanium silicide formation |
US4957590A (en) * | 1988-02-22 | 1990-09-18 | Texas Instruments Incorporated | Method for forming local interconnects using selective anisotropy |
JPH0622218B2 (ja) * | 1988-08-06 | 1994-03-23 | 富士通株式会社 | エッチング方法 |
JP2821613B2 (ja) * | 1989-03-15 | 1998-11-05 | ソニー株式会社 | 半導体装置の製造方法 |
JPH0393223A (ja) * | 1989-09-06 | 1991-04-18 | Hitachi Ltd | 半導体装置の製造方法 |
KR100214036B1 (ko) * | 1991-02-19 | 1999-08-02 | 이데이 노부유끼 | 알루미늄계 배선형성방법 |
JPH05211134A (ja) * | 1991-10-07 | 1993-08-20 | Sumitomo Metal Ind Ltd | 薄膜の形成方法及び薄膜形成装置 |
JP3211352B2 (ja) * | 1992-03-12 | 2001-09-25 | ソニー株式会社 | 半導体装置におけるメタルプラグの形成方法 |
US5652180A (en) * | 1993-06-28 | 1997-07-29 | Kawasaki Steel Corporation | Method of manufacturing semiconductor device with contact structure |
JP2833684B2 (ja) * | 1993-09-29 | 1998-12-09 | セントラル硝子株式会社 | 薄膜形成装置のクリーニング方法 |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
JP2809113B2 (ja) * | 1994-09-29 | 1998-10-08 | 日本電気株式会社 | 半導体装置の製造方法 |
US5972790A (en) * | 1995-06-09 | 1999-10-26 | Tokyo Electron Limited | Method for forming salicides |
JPH0963988A (ja) * | 1995-08-23 | 1997-03-07 | Mitsubishi Electric Corp | 高融点金属含有膜のエッチング方法並びにそれを用いた半導体装置およびその製造方法 |
JPH09111460A (ja) * | 1995-10-11 | 1997-04-28 | Anelva Corp | チタン系導電性薄膜の作製方法 |
JPH09283463A (ja) * | 1996-04-15 | 1997-10-31 | Tokyo Electron Ltd | バリヤメタル層及びその形成方法 |
US5744395A (en) * | 1996-10-16 | 1998-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure |
US5926737A (en) * | 1997-08-19 | 1999-07-20 | Tokyo Electron Limited | Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing |
US5856237A (en) * | 1997-10-20 | 1999-01-05 | Industrial Technology Research Institute | Insitu formation of TiSi2/TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer |
-
1997
- 1997-05-08 JP JP09118461A patent/JP3129232B2/ja not_active Expired - Fee Related
-
1998
- 1998-05-06 US US09/072,668 patent/US6204170B1/en not_active Expired - Lifetime
- 1998-05-08 CN CN98109731A patent/CN1108630C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372063C (zh) * | 2002-07-02 | 2008-02-27 | 日本电气株式会社 | Ⅲ族氮化物半导体衬底及其生产工艺 |
CN101217110B (zh) * | 2002-07-02 | 2010-10-13 | 日本电气株式会社 | Ⅲ族氮化物半导体衬底及其生产工艺 |
CN101304843B (zh) * | 2005-10-14 | 2013-01-09 | 六号元素(产品)(控股)公司 | 制造改性磨料复合片的方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH10308360A (ja) | 1998-11-17 |
JP3129232B2 (ja) | 2001-01-29 |
CN1108630C (zh) | 2003-05-14 |
US6204170B1 (en) | 2001-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1108630C (zh) | 制备有金属硅化物膜的半导体器件的方法 | |
CN1204607C (zh) | 扩散阻挡层的淀积方法 | |
KR0179822B1 (ko) | 반도체 장치의 배선 구조 및 그 제조 방법 | |
US6830820B2 (en) | Chemical vapor deposition of titanium | |
US7402512B2 (en) | High aspect ratio contact structure with reduced silicon consumption | |
EP0631309A2 (en) | Semiconductor device with contact structure and method of manufacturing the same | |
US5736455A (en) | Method for passivating the sidewalls of a tungsten word line | |
JPS63205951A (ja) | 安定な低抵抗コンタクト | |
JPH0573255B2 (zh) | ||
JPH08213343A (ja) | 半導体装置およびその製造方法 | |
JPH08167717A (ja) | 半導体装置の製造方法 | |
JP3175721B2 (ja) | 半導体装置の製造方法 | |
JPH08115984A (ja) | 半導体装置及びその製造方法 | |
US20060202283A1 (en) | Metal silicide adhesion layer for contact structures | |
US6136691A (en) | In situ plasma clean for tungsten etching back | |
JP3027946B2 (ja) | 半導体装置およびその製造方法 | |
US6882052B2 (en) | Plasma enhanced liner | |
US6222267B1 (en) | Semiconductor device and manufacturing thereof | |
JP3252397B2 (ja) | 配線形成方法 | |
JPH05129231A (ja) | 電極配線 | |
US6291346B1 (en) | Titanium silicide layer formation method | |
JPH1167688A (ja) | シリサイド材料とその薄膜およびシリサイド薄膜の製造方法 | |
EP0838848A1 (en) | Plasma etching of a metal layer comprising copper | |
KR20030050652A (ko) | 텅스텐막의 형성 방법 | |
JPH05144951A (ja) | 配線形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030404 |
|
C14 | Grant of patent or utility model | ||
C41 | Transfer of patent application or patent right or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20030404 Address after: Kawasaki, Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: ERBIDA MEMORY CO., LTD. Free format text: FORMER OWNER: NEC ELECTRONICS TAIWAN LTD. Effective date: 20040806 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040806 Address after: Tokyo, Japan Patentee after: Elpida Memory Inc. Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC Corp. |
|
ASS | Succession or assignment of patent right |
Owner name: PS4 LASCO CO., LTD. Free format text: FORMER OWNER: ELPIDA MEMORY INC. Effective date: 20130822 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130822 Address after: Luxemburg Luxemburg Patentee after: PS4 Russport Co.,Ltd. Address before: Tokyo, Japan Patentee before: Elpida Memory Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20030514 Termination date: 20150508 |
|
EXPY | Termination of patent right or utility model |