CN1204607C - 扩散阻挡层的淀积方法 - Google Patents
扩散阻挡层的淀积方法 Download PDFInfo
- Publication number
- CN1204607C CN1204607C CNB981059112A CN98105911A CN1204607C CN 1204607 C CN1204607 C CN 1204607C CN B981059112 A CNB981059112 A CN B981059112A CN 98105911 A CN98105911 A CN 98105911A CN 1204607 C CN1204607 C CN 1204607C
- Authority
- CN
- China
- Prior art keywords
- tantalum
- layer
- deposit
- tasin
- organic precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 13
- 238000009792 diffusion process Methods 0.000 title abstract description 11
- 238000000151 deposition Methods 0.000 title description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 16
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000077 silane Inorganic materials 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 claims description 2
- 229910004200 TaSiN Inorganic materials 0.000 claims 7
- 230000005587 bubbling Effects 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 239000003870 refractory metal Substances 0.000 abstract description 6
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 3
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 47
- 239000010408 film Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 239000000428 dust Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000026030 halogenation Effects 0.000 description 2
- 238000005658 halogenation reaction Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229960004194 lidocaine Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
采用金属有机化学淀积可以形成难熔金属氮化物和难熔金属硅氮化物层(64)。特别地，采用乙基三(二乙基酰胺基)钽(ETDET)和氨(NH3)通过化学汽相淀积可形成氮化钽(TaN)(64)。加入硅烷(SiH4)，还可以形成钽硅氮化物(TaSiN)层(64)。上述薄膜均可在硅片温度低于400摄氏度时形成，并且都有较低的含碳(C)量。因此，本发明的实施例可以用来制造氮化钽(TaN)或钽硅氮化物(TaSiN)层(64)，该层具有较好的保形性和扩散阻挡性。
Description
本发明一般涉及半导体器件工艺，尤其涉及在半导体器件上提供扩散阻挡层。
目前半导体器件所需速度已超过200兆赫兹。为制造下一代半导体器件，要将铜(Cu)用于互连。采用铜将引起的问题之一是铜不能直接接触二氧化硅，这是因为铜很容易扩散穿通二氧化硅层。因此，在现有工艺中一般铜的所有面均被扩散阻挡层所包围。
铜的扩散阻挡层包括大量材料，如氮化硅，各种难熔金属氮化物(TiN，TaN，WN，MoN)和难熔硅氮化物(TiSiN，TaSiN，WSiN)或难熔金属-半导体-氮化物层。在所有这些阻挡层中，最有前途的两种是氮化钽(TaN)和钽硅氮化物(TaSiN)。这些材料通常用溅射的方法淀积。但是，溅射通常对侧壁台阶覆盖较差，所谓台阶覆盖是指在特定表面上淀积层厚度与在半导体器件上表面上淀积层厚度之比。当溅射氮化钽(TaN)和钽硅氮化物(TaSiN)时，若高宽比为3∶1，则0.35微米通孔的台阶覆盖为5％到20％。如此低的台阶覆盖增加了阻挡材料不够厚从而无法沿深孔的底部和侧壁形成有效扩散阻挡层的危险。为了沿开口侧壁得到足够材料，可以在最上表面淀积更厚的一层，但是这会导致互连电阻的增加，因此是不可取的。
利用化学汽相淀积(CVD)形成氮化钽。用于生成氮化钽的先质(precursor)包括卤化钽，例如五氯化钽。采用卤化钽而导致的问题是卤化物与铜反应而腐蚀互连。另一种先质是五(二甲基胺)钽(Ta(Nme2)5)。当采用这种先质淀积氮化钽时，实际生成化合物Ta3N5的绝缘层。因为绝缘层阻挡了上互连层和下互连层的电学连接，所以绝缘层不能用于接触孔和通孔。
还有另外一种已知的先质是叔丁基亚氨-3-二乙氨基钽[(TBTDET)，Ta＝NBu(NEt2)3]。这种化合物可以用来生成TaN。但是，采用这种先质也有问题。特别是适当地淀积低阻薄膜需要淀积温度高于600℃。如此高的温度在背端金属化时与低k介质是矛盾的，并且将在背端材料之间引入导致热失配的高应力。采用TBTDET先质引起的另一个问题是在薄膜中将掺入过多的碳(C)。该化合物通常含有25％原子的碳。如此高的碳含量将增加薄膜的电阻，并降低薄膜密度，削弱薄膜对较厚材料的扩散阻挡效果。采用TBTDET在低于600℃的温度下淀积的氮化钽，其电阻率为12,000微欧姆-厘米。具有如此高电阻率的薄膜(期望小于1,000微欧姆-厘米)是不能用于有效的互连结构的。
采用四氯化钛(TiCl4)进行钛硅氮化物(TiSiN)的CVD已被证实。但并不期望存在该化合物，因为在形成TiSiN的过程中出现了氯，其腐蚀了用于互连的铜或其它材料。
公开了相关技术的一篇文献如下，在题为“Effect of hydrogen ondeposition of tantalum nitride thin films from ethylimidotantalumcomplex”的文章中，参见Journal of Material Science Letters，vol.11，no.9，pp.570-572，公开了金属有机先质向无机材料的转化。该文献还公开了几个实验的初步结果，设计这些实验的目的是用来研究H2对TaN薄膜生长的影响。
因此，需要一种采用有机-金属先质在低温下淀积氮化钽和TaSiN的方法，该方法即满足良好的电阻率，又具有优良的阻挡特性。
本发明以实例的方式说明，但并不局限于附图，其中相同的标号代表相同的部分，图中：
图1是半导体器件衬底的部分剖面图，在器件的衬底上有层间绝缘层，在绝缘层上开孔暴露出在衬底中的掺杂区；
图2是图1的剖面根据本发明的一个实施例形成用于互连材料后的剖面图；
图3是在图2中的衬底上形成与衬底中掺杂区的镶嵌互连；
图4是在图3中衬底上形成层间绝缘层并开孔后的顶视图；
图5是图4中衬底的剖面图，形成了到下互连层的孔；
图6是在图5中衬底上形成了与下互连层的五连的剖面图；
图7是在图6中衬底上形成了大体上的完整器件后的剖面图。
熟练的技术人员知道图中的元件被简化了，并且没有按比例绘制。例如，图中一些元件的尺寸相对于其它部分有些夸大，这是为了使本发明的实施例易于理解。
采用金属有机物化学淀积形成难熔金属氮化物和难熔金属硅氮化物层。特别是利用乙基三(二乙基酰胺基)钽[(ETDET)，(Et2N)3Ta＝NEt]和氨(NH3)采用化学汽相淀积(CVD)形成氮化钽(TaN)。通过包含半导体源如硅烷，也可以形成钽硅氮化物(TaSiN)层。以上各层均可在硅片温度低于500摄氏度的条件下形成，薄膜中含有少量的碳(C)。因此，本发明的实施例可以用来形成相对稳定并具有良好扩散阻挡特性的氮化钽或钽硅氮化物层。
在本说明书中，化学汽相淀积是不同于溅射淀积的一种淀积方法。溅射淀积本质上是一种通过使等离子体直接轰击目标靶而在硅片表面淀积薄膜的物理淀积方法。从目标靶上轰击出来的材料基本上垂直地淀积于硅片上。而与此相对，化学汽相淀积是发生于衬底表面或附近的化学反应，在硅片暴露的表面上形成了薄膜。
采用ETDET/NH3和ETDET/NH3/SiH4分别形成氮化钽(TaN)和钽硅氮化物(TaSiN)。对于氮化钽，淀积通常在化学汽相淀积反应室内进行，气压通常为5-15乇的范围内。监控的淀积温度取决于被监控点的温度。如果监控加热器，温度一般在400-480摄氏度范围内。如果测量硅片温度，温度一般在350-400摄氏度范围内。
用氦气(He)引入ETDET作为载气流过导管引入。氦气(He)的流量在200-800sccm范围内。导管加热箱的温度维持在大约80摄氏度。通常，加热箱的温度维持在大约50-90摄氏度。在导管内ETDET的温度大约比加热箱的温度低10摄氏度。引入的氨气(NH3)的流量在200-500sccm的范围内时一般淀积速率大约为150-200埃/分钟。淀积速率也决定于反应物的组成。采用以上参数可以淀积含碳(C)量少于15％的氮化钽薄膜，一般含碳量不高于1％。当采用该薄膜作为阻挡层时，一般在暴露的衬底表面淀积的氮化钽薄膜厚度大约在200-300埃范围内，在高宽比为3∶1的孔下表面处，台阶覆盖大于50％。
已观察到氨的流量增强了所有温度范围内的淀积。若没有氨，即使在高的硅片温度下也只能观察到极有限的淀积或根本不可能观察到淀积。这与文献报道采用先质(TBTDET)淀积氮化钽不一样，其淀积不采用氨气(NH3)。
在化学汽相淀积系统中，在孔的底部淀积薄膜一般是更困难的，因此，底部的台阶覆盖是薄膜最薄部分的标志。对于金属表面和氧化物表面，氮化钽均具有良好的粘附性。这对于将该层集成到互连工艺中是非常重要的。该薄膜应该用来与半导体衬底内的含有栅电极或掺杂区的硅互连(电学上和物理上)，在氮化钽和硅(Si)之间可以淀积钛以形成良好的欧姆接触。没有钛，由于氮化钽和p+硅之间较大的功函数差，在氮化钽和p+硅之间将形成相对较高的接触电阻。
淀积TaSiN的参数除了以下所述与上述参数相同。气压一般在0.1-1乇范围内。气体流量略微有所改变：在与上述淀积氮化钽条件相同的导管中，氦气(He)的流量大约在50-150sccm的范围内；氨气的流量大约为150-300sccm；硅烷的流量大约为1-10sccm。采用以上参数淀积的速率大约为150-250埃/分钟，其含碳量和粘附特性与氮化钽层基本一致。
不同的源气体可以作为硅源和氮化钽的先质。特别是，可以采用乙硅烷(Si2H6)或其它含硅气体。更进一步，还可以采用含有其它半导体源如锗的源气体。但是必须注意确保不会发生汽相反应。并且，淀积时硅片温度不应超过500摄氏度，基于上述考虑，一般应低于400摄氏度。TaN先质具有同样的关系。通常，乙基原子团与双键氮原子相连可以组成乙基[(Et2N)3Ta＝NEt]或甲基[(Et2N)3Ta＝NMe]原子团。通过导管的载气包括氦气(He)，氩气(Ar)，氮气(N2)或氢气(H2)。
通过化学汽相淀积氮化钽薄膜后，可以用现场等离子体处理薄膜，这样可以降低淀积薄膜的电阻率。不同的气体如氩气，氢气，氮气，硅烷和氨气，在等离子体处理时，可以单独采用也可以混合采用。例如，采用氩气一般可以以系数2或更多来降低薄膜电阻率。其它气体与氩气一起采用会有更好的效果，但这并不是必须的。采用硅烷将允许在薄膜中引入硅，这样将在晶格中形成TaSiN。这种处理方法可以控制薄膜中硅和氮的比例。以上气体的流量在100-1000sccm的范围内；气压在100毫乇-15乇的范围内；等离子体功率在100-2000瓦特范围内。等离子体处理也可以周期性地进行，即，淀积/等离子体处理/淀积。并且，为在薄膜中引入硅，采用硅烷对薄膜进行热退火可以代替等离子体处理。该工艺将在淀积结束后使硅烷气体流过加热的硅片。退火条件与等离子体处理的条件基本一致除了没有等离子体。
采用了实例以更好地理解本发明的实施例，其中通过化学汽相淀积材料形成了两层互连。图1是在形成互连之前，部分半导体器件衬底10的剖面图。半导体器件衬底10是单晶半导体晶片，半导体在绝缘体上的半导体晶片或其它用于制造半导体器件的衬底。场隔离区12形成于半导体器件衬底10上。掺杂区14是晶体管的源/漏区，其位于衬底10与场隔离区12相邻处。栅绝缘层22和栅电极24覆盖了衬底10和掺杂区14的部分。层间绝缘层26淀积于半导体器件衬底10上。层间绝缘层26可以包括非掺杂，掺杂或掺杂与非掺杂二氧化硅薄膜的混合。在特定的实施例中，非掺杂二氧化硅薄膜被硼磷硅玻璃层(BPSG)所覆盖。在层26平坦化后，通过层间绝缘层26形成开孔28暴露掺杂区14。如图1所示，孔28包括与掺杂区14接触相对较窄的接触部分，以及形成互连的相对较宽的互连沟槽。在图1的实例中，与沟槽部分相比接触部分的高宽比为3∶1。这是当前常规工艺中双镶嵌工艺形成镶嵌互连的实例。
在层间绝缘层26上和孔28中淀积用于接触和互连的材料。如图3所示，图中是半成品器件，形成了钛膜32或其它难熔金属薄膜，该薄膜与掺杂区14接触。该薄膜一般厚度为100-400埃。然后，在层32上形成了氮化钽或TaSiN层34。淀积氮化钽或TaSiN层34采用如前所述的淀积参数。该层的厚度在200-300埃范围内。导电层36形成在孔中的剩余部分内并覆盖在层34上。导电层36一般包括铜(Cu)，铝(Al)，钨(W)或其它类似物质。在该特定的实施例中，导电层36是铜。然后，抛光半成品器件，去除层间绝缘层26上的层32，34和36。如图3所示，这样就形成了用于互连的接触部分和互连部分42和44。
在第一层间绝缘层26上和互连层42和44上淀积并且图形化第二层间绝缘层56。图4和图5分别是图形化第二层间绝缘层的顶视图和剖面图。第二层间绝缘层56包括掺杂或非掺杂氧化物。图形化形成了通孔52和互连沟槽54。其它通孔和互连沟槽也形成，但在图4和图5中并没有画出。
如图6所示，采用前述淀积方法的一种淀积氮化钽或TaSiN薄膜64。层64接触下层互连42。层64的厚度大约在200-300埃的范围内，材料与层36相似的第二导电层66覆盖在层64上。通过抛光去除层64和层66覆盖于第二层间绝缘层上并在互连沟槽以外的部分以得到如图6所示的结构。层64和层66组合在一起构成了半导体器件的位线62。如图7所示，在第二层互连上覆盖钝化层72就形成了大体上完整的器件70。在另一个实施例中，还可再形成其它的绝缘层和互连层，但是图中并没有画出。
采用本发明的实施例有许多优点。采用化学汽相淀积形成氮化钽或TaSiN的反应是在硅片温度低于大约500摄氏度的条件下完成的，一般低于400摄氏度。因此，该工艺可满足低k介质，并且不会在薄膜内引起高应力。引入的碳杂质少于15％原子百分比，一般为1％或更少。因此，该薄膜没有孔，并且与采用TBTDET作为先质相比，该薄膜具有更好的扩散阻挡特性。碳含量的减少使得采用化学汽相淀积形成氮化钽薄膜的电阻率与采用TBTDET的当前工艺相比至少降低了一个数量级。另外，本实施例的另一个优点是相对易于集成到现有的工艺过程中。
综上所述，本发明提供了一种淀积扩散阻挡层的工艺，该工艺用于制造半导体器件，其具有前述所有优点。虽然本发明是参考特定直观的实施例描述的，但是这并不意味本发明局限于直观的实施例。熟练的技术人员可以不违背本发明的精神而对本发明进行变动和修改。因此，本发明内的这种变动和修改均应包括在本发明的附加权利要求书中。
Claims (3)
1.制造半导体器件的方法，包括以下步骤：
在半导体器件衬底上形成第一绝缘层，其中第一绝缘层具有孔；
在孔内形成互连，其中，互连通过以下工序形成：
化学汽相淀积TaSiN层；以及
形成TaSiN层之后形成导电层，
其特征在于：淀积TaSiN层的步骤包括在高宽比为3∶1或3∶1以上的部件处淀积台阶覆盖大于50％的TaSiN层，
其中，淀积TaSiN层包括：
将钽有机先质引入CVD反应室，其中，钽有机先质包括乙基三(二乙基酰胺基)钽；
将氨引入CVD反应室；
将半导体源引入CVD反应室，其中，所述半导体源包括硅烷；以及
使钽有机先质、氨和半导体源反应形成TaSiN层。
2.权利要求1的方法，其中，化学汽相淀积TaSiN层是在晶片温度为350-400℃的温度下进行的。
3.权利要求1的方法，其中，引入钽有机先质的步骤包括：
以50-150标准立方厘米/分的流量使载气流入导管；以及
通过钽有机先质使载气冒泡，其中，导管包括温度范围为50℃-90℃的加热器，钽有机先质和载气通过导管引入CVD反应室。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/829,752 US6153519A (en) | 1997-03-31 | 1997-03-31 | Method of forming a barrier layer |
| US829752 | 1997-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1195188A CN1195188A (zh) | 1998-10-07 |
| CN1204607C true CN1204607C (zh) | 2005-06-01 |
Family
ID=25255452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB981059112A Expired - Lifetime CN1204607C (zh) | 1997-03-31 | 1998-03-30 | 扩散阻挡层的淀积方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6153519A (zh) |
| EP (1) | EP0869544B1 (zh) |
| JP (1) | JP4180145B2 (zh) |
| KR (1) | KR100546943B1 (zh) |
| CN (1) | CN1204607C (zh) |
| DE (1) | DE69833140T2 (zh) |
| SG (1) | SG63831A1 (zh) |
| TW (1) | TW359009B (zh) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6825132B1 (en) | 1996-02-29 | 2004-11-30 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device including an insulation film on a conductive layer |
| KR100383498B1 (ko) | 1996-08-30 | 2003-08-19 | 산요 덴키 가부시키가이샤 | 반도체 장치 제조방법 |
| US6153519A (en) | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
| US6690084B1 (en) | 1997-09-26 | 2004-02-10 | Sanyo Electric Co., Ltd. | Semiconductor device including insulation film and fabrication method thereof |
| JP3149846B2 (ja) | 1998-04-17 | 2001-03-26 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6794283B2 (en) * | 1998-05-29 | 2004-09-21 | Sanyo Electric Co., Ltd. | Semiconductor device and fabrication method thereof |
| US6794752B2 (en) * | 1998-06-05 | 2004-09-21 | United Microelectronics Corp. | Bonding pad structure |
| JP2000049116A (ja) | 1998-07-30 | 2000-02-18 | Toshiba Corp | 半導体装置及びその製造方法 |
| KR20000022003A (ko) * | 1998-09-10 | 2000-04-25 | 이경수 | 금속과규소를포함한3성분질화물막의형성방법 |
| US7067861B1 (en) | 1998-11-25 | 2006-06-27 | Micron Technology, Inc. | Device and method for protecting against oxidation of a conductive layer in said device |
| US6303972B1 (en) | 1998-11-25 | 2001-10-16 | Micron Technology, Inc. | Device including a conductive layer protected against oxidation |
| US6346454B1 (en) * | 1999-01-12 | 2002-02-12 | Agere Systems Guardian Corp. | Method of making dual damascene interconnect structure and metal electrode capacitor |
| JP2000208743A (ja) * | 1999-01-12 | 2000-07-28 | Lucent Technol Inc | ジュアルダマシ―ンコンデンサを備えた集積回路デバイスおよびこれを製造するための関連する方法 |
| EP1075019A4 (en) * | 1999-02-15 | 2003-01-29 | Asahi Glass Co Ltd | INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD |
| US6616972B1 (en) | 1999-02-24 | 2003-09-09 | Air Products And Chemicals, Inc. | Synthesis of metal oxide and oxynitride |
| US6268288B1 (en) * | 1999-04-27 | 2001-07-31 | Tokyo Electron Limited | Plasma treated thermal CVD of TaN films from tantalum halide precursors |
| JP4763894B2 (ja) * | 1999-04-27 | 2011-08-31 | 東京エレクトロン株式会社 | ハロゲン化タンタル前駆物質からのｃｖｄ窒化タンタルプラグの形成 |
| US6365511B1 (en) * | 1999-06-03 | 2002-04-02 | Agere Systems Guardian Corp. | Tungsten silicide nitride as a barrier for high temperature anneals to improve hot carrier reliability |
| US6328871B1 (en) | 1999-08-16 | 2001-12-11 | Applied Materials, Inc. | Barrier layer for electroplating processes |
| TW472350B (en) | 1999-08-27 | 2002-01-11 | Texas Instruments Inc | Si-rich surface layer capped diffusion barriers |
| US7655555B2 (en) * | 1999-08-27 | 2010-02-02 | Texas Instruments Incorporated | In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability |
| WO2001042529A1 (en) * | 1999-12-09 | 2001-06-14 | Tokyo Electron Limited | METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM |
| US6656831B1 (en) * | 2000-01-26 | 2003-12-02 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition of a metal nitride layer |
| US6743473B1 (en) * | 2000-02-16 | 2004-06-01 | Applied Materials, Inc. | Chemical vapor deposition of barriers from novel precursors |
| US6455421B1 (en) * | 2000-07-31 | 2002-09-24 | Applied Materials, Inc. | Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition |
| US6562708B1 (en) * | 2000-11-16 | 2003-05-13 | Tokyo Electron Limited | Method for incorporating silicon into CVD metal films |
| US6886110B2 (en) * | 2000-11-21 | 2005-04-26 | Wind River Systems, Inc. | Multiple device scan chain emulation/debugging |
| US6747353B2 (en) * | 2000-11-27 | 2004-06-08 | Texas Instruments Incorporated | Barrier layer for copper metallization in integrated circuit fabrication |
| US6720247B2 (en) * | 2000-12-14 | 2004-04-13 | Texas Instruments Incorporated | Pre-pattern surface modification for low-k dielectrics using A H2 plasma |
| TW550707B (en) * | 2001-04-27 | 2003-09-01 | Promos Technologies Inc | Tantalum carbide nitride diffusion barrier for copper metallization process |
| US7105444B2 (en) | 2001-07-19 | 2006-09-12 | Samsung Electronics Co., Ltd. | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
| US20030017697A1 (en) * | 2001-07-19 | 2003-01-23 | Kyung-In Choi | Methods of forming metal layers using metallic precursors |
| US7098131B2 (en) * | 2001-07-19 | 2006-08-29 | Samsung Electronics Co., Ltd. | Methods for forming atomic layers and thin films including tantalum nitride and devices including the same |
| KR100466309B1 (ko) * | 2002-05-21 | 2005-01-13 | 삼성전자주식회사 | 반도체 장치의 금속층 형성 방법 및 장치 |
| US6576543B2 (en) * | 2001-08-20 | 2003-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for selectively depositing diffusion barriers |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US20030091739A1 (en) * | 2001-11-14 | 2003-05-15 | Hitoshi Sakamoto | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
| US7659209B2 (en) * | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
| US6906305B2 (en) * | 2002-01-08 | 2005-06-14 | Brion Technologies, Inc. | System and method for aerial image sensing |
| JP2003218201A (ja) * | 2002-01-24 | 2003-07-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US6958290B2 (en) | 2002-05-03 | 2005-10-25 | Texas Instruments Incorporated | Method and apparatus for improving adhesion between layers in integrated devices |
| US6620724B1 (en) * | 2002-05-09 | 2003-09-16 | Infineon Technologies Ag | Low resistivity deep trench fill for DRAM and EDRAM applications |
| US6893947B2 (en) | 2002-06-25 | 2005-05-17 | Freescale Semiconductor, Inc. | Advanced RF enhancement-mode FETs with improved gate properties |
| US7081409B2 (en) * | 2002-07-17 | 2006-07-25 | Samsung Electronics Co., Ltd. | Methods of producing integrated circuit devices utilizing tantalum amine derivatives |
| US6794284B2 (en) * | 2002-08-28 | 2004-09-21 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using disilazanes |
| US6967159B2 (en) * | 2002-08-28 | 2005-11-22 | Micron Technology, Inc. | Systems and methods for forming refractory metal nitride layers using organic amines |
| US6995081B2 (en) * | 2002-08-28 | 2006-02-07 | Micron Technology, Inc. | Systems and methods for forming tantalum silicide layers |
| KR100486278B1 (ko) | 2002-11-11 | 2005-04-29 | 삼성전자주식회사 | 신뢰성이 향상된 게이트 산화막 형성방법 |
| FR2847593A1 (fr) * | 2002-11-26 | 2004-05-28 | St Microelectronics Sa | Procede et dispositif de realisation d'une couche de pentoxyde de tantale sur un materiau porteur, en particulier du niture de titane, et circuit integre incorporant une couche de pentoxyde de tantale |
| US7214991B2 (en) * | 2002-12-06 | 2007-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS inverters configured using multiple-gate transistors |
| US6759297B1 (en) | 2003-02-28 | 2004-07-06 | Union Semiconductor Technology Corporatin | Low temperature deposition of dielectric materials in magnetoresistive random access memory devices |
| US6995475B2 (en) * | 2003-09-18 | 2006-02-07 | International Business Machines Corporation | I/C chip suitable for wire bonding |
| KR100545194B1 (ko) * | 2003-09-19 | 2006-01-24 | 동부아남반도체 주식회사 | 반도체 소자의 확산방지막 형성 방법 |
| US20050104142A1 (en) * | 2003-11-13 | 2005-05-19 | Vijav Narayanan | CVD tantalum compounds for FET get electrodes |
| JP2005183567A (ja) * | 2003-12-18 | 2005-07-07 | Matsushita Electric Ind Co Ltd | 半導体集積回路の製造方法、ヴィアホール形成用共用マスクおよび半導体集積回路 |
| US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
| US20070059929A1 (en) * | 2004-06-25 | 2007-03-15 | Hag-Ju Cho | Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same |
| US20070026621A1 (en) * | 2004-06-25 | 2007-02-01 | Hag-Ju Cho | Non-volatile semiconductor devices and methods of manufacturing the same |
| US7605469B2 (en) * | 2004-06-30 | 2009-10-20 | Intel Corporation | Atomic layer deposited tantalum containing adhesion layer |
| US7253501B2 (en) * | 2004-08-03 | 2007-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance metallization cap layer |
| KR100589285B1 (ko) * | 2004-08-19 | 2006-06-14 | 주식회사 아이피에스 | 다중 적층막 구조의 금속 질화 막 증착 방법 |
| KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
| US20060102895A1 (en) * | 2004-11-16 | 2006-05-18 | Hendrix Bryan C | Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures |
| DE102004061093A1 (de) * | 2004-12-18 | 2006-06-22 | Aixtron Ag | Verfahren zur Herstellung einer Elektrode |
| KR100639458B1 (ko) | 2004-12-30 | 2006-10-26 | 동부일렉트로닉스 주식회사 | ＴａＳＩＮ막을 사용한 확산 방지막 형성 방법 및 이를이용한 금속 배선 형성 방법 |
| JP4931170B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931169B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4931173B2 (ja) * | 2005-03-03 | 2012-05-16 | 株式会社アルバック | タンタル窒化物膜の形成方法 |
| JP4987254B2 (ja) * | 2005-06-22 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
| US7521356B2 (en) * | 2005-09-01 | 2009-04-21 | Micron Technology, Inc. | Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
| JP2007113103A (ja) * | 2005-10-24 | 2007-05-10 | Tokyo Electron Ltd | 成膜方法、成膜装置及び記憶媒体 |
| KR100760920B1 (ko) * | 2006-07-25 | 2007-09-21 | 동부일렉트로닉스 주식회사 | 반도체 집적회로 소자에서 구리 배선을 형성하는 방법 |
| US8278216B1 (en) * | 2006-08-18 | 2012-10-02 | Novellus Systems, Inc. | Selective capping of copper |
| US9087877B2 (en) * | 2006-10-24 | 2015-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k interconnect structures with reduced RC delay |
| TW200825200A (en) * | 2006-12-05 | 2008-06-16 | Advanced Tech Materials | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
| KR100842914B1 (ko) * | 2006-12-28 | 2008-07-02 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
| US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
| US7994640B1 (en) | 2007-07-02 | 2011-08-09 | Novellus Systems, Inc. | Nanoparticle cap layer |
| US8039379B1 (en) | 2007-07-02 | 2011-10-18 | Novellus Systems, Inc. | Nanoparticle cap layer |
| US7919409B2 (en) * | 2008-08-15 | 2011-04-05 | Air Products And Chemicals, Inc. | Materials for adhesion enhancement of copper film on diffusion barriers |
| JP5824330B2 (ja) * | 2011-11-07 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| CN102569182B (zh) * | 2012-03-01 | 2016-07-06 | 上海华虹宏力半导体制造有限公司 | 接触孔及其制作方法、半导体器件 |
| US9899234B2 (en) | 2014-06-30 | 2018-02-20 | Lam Research Corporation | Liner and barrier applications for subtractive metal integration |
| US9214333B1 (en) * | 2014-09-24 | 2015-12-15 | Lam Research Corporation | Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD |
| US9589790B2 (en) | 2014-11-24 | 2017-03-07 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10002834B2 (en) * | 2015-03-11 | 2018-06-19 | Applied Materials, Inc. | Method and apparatus for protecting metal interconnect from halogen based precursors |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US9601693B1 (en) | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US9704804B1 (en) * | 2015-12-18 | 2017-07-11 | Texas Instruments Incorporated | Oxidation resistant barrier metal process for semiconductor devices |
| US10629435B2 (en) | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10074543B2 (en) | 2016-08-31 | 2018-09-11 | Lam Research Corporation | High dry etch rate materials for semiconductor patterning applications |
| US9865455B1 (en) | 2016-09-07 | 2018-01-09 | Lam Research Corporation | Nitride film formed by plasma-enhanced and thermal atomic layer deposition process |
| US10454029B2 (en) | 2016-11-11 | 2019-10-22 | Lam Research Corporation | Method for reducing the wet etch rate of a sin film without damaging the underlying substrate |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US10134579B2 (en) | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| US10731250B2 (en) | 2017-06-06 | 2020-08-04 | Lam Research Corporation | Depositing ruthenium layers in interconnect metallization |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| KR20200118504A (ko) | 2018-03-02 | 2020-10-15 | 램 리써치 코포레이션 | 가수분해를 사용한 선택적인 증착 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4490209B2 (en) * | 1983-12-27 | 2000-12-19 | Texas Instruments Inc | Plasma etching using hydrogen bromide addition |
| US4684542A (en) * | 1986-08-11 | 1987-08-04 | International Business Machines Corporation | Low pressure chemical vapor deposition of tungsten silicide |
| US4847111A (en) * | 1988-06-30 | 1989-07-11 | Hughes Aircraft Company | Plasma-nitridated self-aligned tungsten system for VLSI interconnections |
| JPH02103939A (ja) * | 1988-10-12 | 1990-04-17 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5106786A (en) * | 1989-10-23 | 1992-04-21 | At&T Bell Laboratories | Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide |
| JP3127454B2 (ja) * | 1990-08-08 | 2001-01-22 | ソニー株式会社 | シリコン系被エッチング材のエッチング方法 |
| US5252518A (en) * | 1992-03-03 | 1993-10-12 | Micron Technology, Inc. | Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane |
| JP2786071B2 (ja) * | 1993-02-17 | 1998-08-13 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5273783A (en) * | 1993-03-24 | 1993-12-28 | Micron Semiconductor, Inc. | Chemical vapor deposition of titanium and titanium containing films using bis (2,4-dimethylpentadienyl) titanium as a precursor |
| US5364803A (en) * | 1993-06-24 | 1994-11-15 | United Microelectronics Corporation | Method of preventing fluorine-induced gate oxide degradation in WSix polycide structure |
| JPH07180058A (ja) * | 1993-12-22 | 1995-07-18 | Hitachi Ltd | 窒化タングステン膜の形成方法 |
| JP3294041B2 (ja) * | 1994-02-21 | 2002-06-17 | 株式会社東芝 | 半導体装置 |
| JP2692590B2 (ja) * | 1994-06-29 | 1997-12-17 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5635741A (en) * | 1994-09-30 | 1997-06-03 | Texas Instruments Incorporated | Barium strontium titanate (BST) thin films by erbium donor doping |
| US5675310A (en) * | 1994-12-05 | 1997-10-07 | General Electric Company | Thin film resistors on organic surfaces |
| US5614437A (en) * | 1995-01-26 | 1997-03-25 | Lsi Logic Corporation | Method for fabricating reliable metallization with Ta-Si-N barrier for semiconductors |
| US5668054A (en) * | 1996-01-11 | 1997-09-16 | United Microelectronics Corporation | Process for fabricating tantalum nitride diffusion barrier for copper matallization |
| US6077774A (en) * | 1996-03-29 | 2000-06-20 | Texas Instruments Incorporated | Method of forming ultra-thin and conformal diffusion barriers encapsulating copper |
| US5913144A (en) * | 1996-09-20 | 1999-06-15 | Sharp Microelectronics Technology, Inc. | Oxidized diffusion barrier surface for the adherence of copper and method for same |
| EP0854505A3 (en) * | 1997-01-21 | 1998-11-11 | Texas Instruments Incorporated | Process of depositing a TiN based film during the fabrication of a semiconductor device |
| US6153519A (en) | 1997-03-31 | 2000-11-28 | Motorola, Inc. | Method of forming a barrier layer |
| US6015917A (en) * | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
-
1997
- 1997-03-31 US US08/829,752 patent/US6153519A/en not_active Expired - Lifetime
-
1998
- 1998-01-08 TW TW087100199A patent/TW359009B/zh not_active IP Right Cessation
- 1998-03-18 EP EP98104865A patent/EP0869544B1/en not_active Expired - Lifetime
- 1998-03-18 DE DE69833140T patent/DE69833140T2/de not_active Expired - Lifetime
- 1998-03-20 SG SG1998000589A patent/SG63831A1/en unknown
- 1998-03-30 CN CNB981059112A patent/CN1204607C/zh not_active Expired - Lifetime
- 1998-03-31 JP JP10568398A patent/JP4180145B2/ja not_active Expired - Lifetime
- 1998-03-31 KR KR1019980011119A patent/KR100546943B1/ko active IP Right Grant
-
2000
- 2000-05-12 US US09/570,862 patent/US6376371B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US6153519A (en) | 2000-11-28 |
| DE69833140D1 (de) | 2006-04-06 |
| JPH10284440A (ja) | 1998-10-23 |
| TW359009B (en) | 1999-05-21 |
| US6376371B1 (en) | 2002-04-23 |
| DE69833140T2 (de) | 2006-07-06 |
| EP0869544B1 (en) | 2006-01-11 |
| EP0869544A3 (en) | 2000-02-02 |
| KR19980080896A (ko) | 1998-11-25 |
| SG63831A1 (en) | 1999-03-30 |
| EP0869544A2 (en) | 1998-10-07 |
| CN1195188A (zh) | 1998-10-07 |
| JP4180145B2 (ja) | 2008-11-12 |
| KR100546943B1 (ko) | 2006-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1204607C (zh) | 扩散阻挡层的淀积方法 | |
| US6284316B1 (en) | Chemical vapor deposition of titanium | |
| US7084504B2 (en) | Boron incorporated diffusion barrier material | |
| US8946074B2 (en) | Method of making interconnect structure | |
| US6461960B2 (en) | Method of manufacturing a semiconductor device | |
| US11631640B2 (en) | Metal loss prevention in conductive structures | |
| EP1412976B1 (en) | Boron-doped titanium nitride layer for high aspect ratio semiconductor devices | |
| KR100688055B1 (ko) | 저온 장벽금속층을 이용한 금속배선 제조 방법 | |
| US20070155164A1 (en) | Metal seed layer deposition | |
| WO2000075964A2 (en) | Method of fabricating semiconductor device employing copper interconnect structure | |
| US7122474B2 (en) | Method for forming barrier metal of semiconductor device | |
| US6433434B1 (en) | Apparatus having a titanium alloy layer | |
| JPH05129231A (ja) | 電極配線 | |
| JPH09260306A (ja) | 薄膜形成方法 | |
| JP4065351B2 (ja) | 欠陥密度の低いＴｉ−Ｓｉ−Ｎ及びＴｉ−Ｂ−Ｎベースの絶縁保護性障壁膜の製法 | |
| KR100609049B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| KR0175016B1 (ko) | 선택적 텅스텐 질화 박막 형성방법 및 이를 이용한 금속배선 방법 | |
| KR100236984B1 (ko) | 금속배선의 전자이주특성 개선 방법 | |
| KR19990055159A (ko) | 반도체 장치의 텅스텐 금속배선 형성방법 | |
| KR100464393B1 (ko) | 반도체소자의금속배선형성방법 | |
| JPH03278431A (ja) | 半導体装置の製造方法 | |
| KR20010046339A (ko) | 접촉 저항을 개선하기 위한 반도체 소자의 금속 콘택형성방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040806 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20040806 Address after: Texas in the United States Applicant after: FreeScale Semiconductor Address before: Illinois Instrunment Applicant before: Motorola, Inc. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FISICAL SEMICONDUCTOR INC. Free format text: FORMER NAME: FREEDOM SEMICONDUCTOR CORP. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: Texas in the United States Patentee after: FREESCALE SEMICONDUCTOR, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050601 |