CN1184666C - 制造光滑电极和具有改进存储保持的薄膜铁电电容器的dc溅射工艺 - Google Patents

制造光滑电极和具有改进存储保持的薄膜铁电电容器的dc溅射工艺 Download PDF

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Publication number
CN1184666C
CN1184666C CNB99808073XA CN99808073A CN1184666C CN 1184666 C CN1184666 C CN 1184666C CN B99808073X A CNB99808073X A CN B99808073XA CN 99808073 A CN99808073 A CN 99808073A CN 1184666 C CN1184666 C CN 1184666C
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China
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carrier gas
gas mixture
ferroelectric
oxide
reactive species
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Expired - Fee Related
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CNB99808073XA
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Chinese (zh)
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CN1309814A (zh
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林慎一郎
有田浩二
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
CNB99808073XA 1998-06-30 1999-06-28 制造光滑电极和具有改进存储保持的薄膜铁电电容器的dc溅射工艺 Expired - Fee Related CN1184666C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9132998P 1998-06-30 1998-06-30
US60/091,329 1998-08-03
US09/128,249 US6541375B1 (en) 1998-06-30 1998-08-03 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US09/128,249 1998-08-03

Publications (2)

Publication Number Publication Date
CN1309814A CN1309814A (zh) 2001-08-22
CN1184666C true CN1184666C (zh) 2005-01-12

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CNB99808073XA Expired - Fee Related CN1184666C (zh) 1998-06-30 1999-06-28 制造光滑电极和具有改进存储保持的薄膜铁电电容器的dc溅射工艺

Country Status (7)

Country Link
US (1) US6541375B1 (https=)
EP (1) EP1099242A1 (https=)
JP (2) JP2002519864A (https=)
KR (1) KR100419683B1 (https=)
CN (1) CN1184666C (https=)
TW (1) TW449794B (https=)
WO (1) WO2000001000A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257051B (zh) * 2006-12-27 2010-06-02 海力士半导体有限公司 半导体器件及其制造方法
CN111557049A (zh) * 2020-03-31 2020-08-18 长江存储科技有限责任公司 三维存储设备及其形成方法

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104049A (en) * 1997-03-03 2000-08-15 Symetrix Corporation Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
KR100316027B1 (ko) * 1999-12-28 2001-12-20 박종섭 반도체 소자의 전하저장 전극 형성방법
JP3608459B2 (ja) * 1999-12-28 2005-01-12 株式会社村田製作所 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法
WO2001088969A2 (en) * 2000-05-16 2001-11-22 Applied Materials, Inc. Improved capacitor electrodes
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
JP3661850B2 (ja) * 2001-04-25 2005-06-22 富士通株式会社 半導体装置およびその製造方法
US6781179B2 (en) * 2001-05-30 2004-08-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film
JP3971598B2 (ja) * 2001-11-01 2007-09-05 富士通株式会社 強誘電体キャパシタおよび半導体装置
US6815223B2 (en) * 2002-11-22 2004-11-09 Symetrix Corporation Low thermal budget fabrication of ferroelectric memory using RTP
JP4657545B2 (ja) * 2001-12-28 2011-03-23 富士通セミコンダクター株式会社 半導体装置の製造方法
US6807080B2 (en) * 2002-05-17 2004-10-19 Agilent Technologies, Inc. Enhanced storage states in an memory
NO322192B1 (no) * 2002-06-18 2006-08-28 Thin Film Electronics Asa Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning
KR100470166B1 (ko) 2002-07-19 2005-02-07 주식회사 하이닉스반도체 강유전체 메모리 소자의 제조 방법
JP3894554B2 (ja) * 2002-08-07 2007-03-22 松下電器産業株式会社 容量素子及びその製造方法
US6911361B2 (en) * 2003-03-10 2005-06-28 Sharp Laboratories Of America, Inc. Low temperature processing of PCMO thin film on Ir substrate for RRAM application
JP4246159B2 (ja) * 2003-03-25 2009-04-02 富士通マイクロエレクトロニクス株式会社 半導体装置の製造装置及び製造方法
US6830938B1 (en) 2003-06-24 2004-12-14 Texas Instruments Incorporated Method for improving retention reliability of ferroelectric RAM
US7196924B2 (en) * 2004-04-06 2007-03-27 Macronix International Co., Ltd. Method of multi-level cell FeRAM
JP4794227B2 (ja) * 2004-07-15 2011-10-19 日本碍子株式会社 電子放出素子
US7085150B2 (en) * 2004-12-20 2006-08-01 Texas Instruments Incorporated Methods for enhancing performance of ferroelectic memory with polarization treatment
US7149137B2 (en) * 2004-12-30 2006-12-12 Texas Instruments Incorporated Process monitoring for ferroelectric memory devices with in-line retention test
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7833904B2 (en) * 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
DE102006026672A1 (de) * 2006-06-02 2007-12-06 Würth Solar Gmbh & Co. Kg Sputterabscheidung von Molybdänschichten
US8298909B2 (en) 2006-12-27 2012-10-30 Hynix Semiconductor Inc. Semiconductor device and method for fabricating the same
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
KR101086789B1 (ko) * 2007-03-20 2011-11-25 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
TWI396763B (zh) * 2007-06-01 2013-05-21 Hon Hai Prec Ind Co Ltd 濺鍍式鍍膜承載台及鍍膜機台
KR100869343B1 (ko) 2007-08-31 2008-11-19 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US7936597B2 (en) * 2008-03-25 2011-05-03 Seagate Technology Llc Multilevel magnetic storage device
US8098520B2 (en) * 2008-04-25 2012-01-17 Seagate Technology Llc Storage device including a memory cell having multiple memory layers
US9178022B2 (en) * 2010-07-14 2015-11-03 Japan Science And Technology Agency Precursor composition and method for forming amorphous conductive oxide film
US8644000B2 (en) * 2011-09-13 2014-02-04 Fatih Dogan Nanostructured dielectric materials for high energy density multilayer ceramic capacitors
US9450042B2 (en) * 2012-08-06 2016-09-20 GlobalFoundries, Inc. Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating same
JP2018110179A (ja) * 2016-12-31 2018-07-12 株式会社Flosfia 正孔輸送層形成用組成物
US10290341B2 (en) * 2017-02-24 2019-05-14 Micron Technology, Inc. Self-reference for ferroelectric memory
CN111931385B (zh) * 2020-09-15 2024-12-13 国网四川省电力公司电力科学研究院 一种温度对电介质累积效应影响的试验评估方法
US12255225B2 (en) * 2020-09-25 2025-03-18 Intel Corporation Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes
CN114229968B (zh) * 2021-11-22 2023-03-14 清华大学 电芬顿装置和处理污染物的方法
CN114203905A (zh) * 2021-12-09 2022-03-18 北京超弦存储器研究院 一种铁电器件的制造方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3002194A1 (de) * 1980-01-22 1981-07-23 Berna AG Olten, Olten Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung
CA1250155A (en) * 1984-07-31 1989-02-21 James A. Ruf Platinum resistance thermometer
DE3716852C1 (de) * 1987-05-20 1988-07-14 Demetron Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
US5322716A (en) * 1989-07-04 1994-06-21 Matsushita Electric Industrial Co., Ltd. Method for producing magnetic recording medium
US5122923A (en) 1989-08-30 1992-06-16 Nec Corporation Thin-film capacitors and process for manufacturing the same
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
JP3125425B2 (ja) 1992-03-05 2001-01-15 日本電気株式会社 薄膜コンデンサとその製造方法
US5254217A (en) * 1992-07-27 1993-10-19 Motorola, Inc. Method for fabricating a semiconductor device having a conductive metal oxide
JPH07122661A (ja) 1993-10-27 1995-05-12 Olympus Optical Co Ltd 強誘電体メモリ装置
US5539279A (en) 1993-06-23 1996-07-23 Hitachi, Ltd. Ferroelectric memory
US5510173A (en) * 1993-08-20 1996-04-23 Southwall Technologies Inc. Multiple layer thin films with improved corrosion resistance
KR0171060B1 (ko) * 1993-12-28 1999-03-30 스기야마 카즈히코 반도체장치의 제조방법
JP3570692B2 (ja) 1994-01-18 2004-09-29 ローム株式会社 不揮発性メモリ
JPH07326783A (ja) * 1994-05-30 1995-12-12 Canon Inc 光起電力素子の形成方法及びそれに用いる薄膜製造装置
US5478610A (en) * 1994-09-02 1995-12-26 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
JPH0897380A (ja) * 1994-09-21 1996-04-12 Sharp Corp 誘電体キャパシタ及びその製造方法
US5728603A (en) * 1994-11-28 1998-03-17 Northern Telecom Limited Method of forming a crystalline ferroelectric dielectric material for an integrated circuit
KR0155785B1 (ko) 1994-12-15 1998-10-15 김광호 핀형 커패시터 및 그 제조방법
JPH08203266A (ja) 1995-01-27 1996-08-09 Nec Corp 強誘電体メモリ装置
KR100416733B1 (ko) 1995-03-20 2004-07-05 삼성전자주식회사 강유전성캐패시터
WO1996029725A1 (en) * 1995-03-21 1996-09-26 Northern Telecom Limited Ferroelectric dielectric for integrated circuit applications at microwave frequencies
US5592410A (en) 1995-04-10 1997-01-07 Ramtron International Corporation Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation
US5708302A (en) * 1995-04-26 1998-01-13 Symetrix Corporation Bottom electrode structure for dielectric capacitors
US5753945A (en) * 1995-06-29 1998-05-19 Northern Telecom Limited Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer
JPH0945872A (ja) * 1995-07-28 1997-02-14 Olympus Optical Co Ltd 誘電体薄膜素子
JPH0951079A (ja) * 1995-08-08 1997-02-18 Oki Electric Ind Co Ltd 半導体素子およびその製造方法
JP3417167B2 (ja) 1995-09-29 2003-06-16 ソニー株式会社 半導体メモリ素子のキャパシタ構造及びその形成方法
JPH09102590A (ja) * 1995-10-05 1997-04-15 Ricoh Co Ltd 薄膜キャパシタ
US5838605A (en) * 1996-03-20 1998-11-17 Ramtron International Corporation Iridium oxide local interconnect
US5835314A (en) * 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
US6498097B1 (en) 1997-05-06 2002-12-24 Tong Yang Cement Corporation Apparatus and method of forming preferred orientation-controlled platinum film using oxygen

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257051B (zh) * 2006-12-27 2010-06-02 海力士半导体有限公司 半导体器件及其制造方法
CN111557049A (zh) * 2020-03-31 2020-08-18 长江存储科技有限责任公司 三维存储设备及其形成方法
CN111557049B (zh) * 2020-03-31 2021-11-23 长江存储科技有限责任公司 三维存储设备及其形成方法
US11800707B2 (en) 2020-03-31 2023-10-24 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device with reduced local stress
US11937427B2 (en) 2020-03-31 2024-03-19 Yangtze Memory Technologies Co., Ltd. Method for forming three-dimensional memory device with sacrificial channels

Also Published As

Publication number Publication date
CN1309814A (zh) 2001-08-22
JP2005311385A (ja) 2005-11-04
KR100419683B1 (ko) 2004-02-21
TW449794B (en) 2001-08-11
EP1099242A1 (en) 2001-05-16
WO2000001000A1 (en) 2000-01-06
US6541375B1 (en) 2003-04-01
KR20010103555A (ko) 2001-11-23
JP2002519864A (ja) 2002-07-02

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