JP2002519864A - 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス - Google Patents

平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Info

Publication number
JP2002519864A
JP2002519864A JP2000557493A JP2000557493A JP2002519864A JP 2002519864 A JP2002519864 A JP 2002519864A JP 2000557493 A JP2000557493 A JP 2000557493A JP 2000557493 A JP2000557493 A JP 2000557493A JP 2002519864 A JP2002519864 A JP 2002519864A
Authority
JP
Japan
Prior art keywords
carrier gas
gas mixture
ferroelectric
oxygen
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000557493A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002519864A5 (https=
Inventor
慎一郎 林
浩二 有田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of JP2002519864A publication Critical patent/JP2002519864A/ja
Publication of JP2002519864A5 publication Critical patent/JP2002519864A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2000557493A 1998-06-30 1999-06-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス Withdrawn JP2002519864A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9132998P 1998-06-30 1998-06-30
US60/091,329 1998-08-03
US09/128,249 US6541375B1 (en) 1998-06-30 1998-08-03 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US09/128,249 1998-08-03
PCT/JP1999/003466 WO2000001000A1 (en) 1998-06-30 1999-06-28 Dc sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005133712A Division JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Publications (2)

Publication Number Publication Date
JP2002519864A true JP2002519864A (ja) 2002-07-02
JP2002519864A5 JP2002519864A5 (https=) 2005-12-22

Family

ID=26783855

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000557493A Withdrawn JP2002519864A (ja) 1998-06-30 1999-06-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス
JP2005133712A Pending JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005133712A Pending JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Country Status (7)

Country Link
US (1) US6541375B1 (https=)
EP (1) EP1099242A1 (https=)
JP (2) JP2002519864A (https=)
KR (1) KR100419683B1 (https=)
CN (1) CN1184666C (https=)
TW (1) TW449794B (https=)
WO (1) WO2000001000A1 (https=)

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JP2001181089A (ja) * 1999-12-28 2001-07-03 Murata Mfg Co Ltd 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法
JP2001230389A (ja) * 1999-12-28 2001-08-24 Hynix Semiconductor Inc ルテニウム電極を含む半導体メモリ素子及びその製造方法
JP2006236965A (ja) * 2004-07-15 2006-09-07 Ngk Insulators Ltd 電子放出素子
JP2018110179A (ja) * 2016-12-31 2018-07-12 株式会社Flosfia 正孔輸送層形成用組成物

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US8098520B2 (en) * 2008-04-25 2012-01-17 Seagate Technology Llc Storage device including a memory cell having multiple memory layers
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US8644000B2 (en) * 2011-09-13 2014-02-04 Fatih Dogan Nanostructured dielectric materials for high energy density multilayer ceramic capacitors
US9450042B2 (en) * 2012-08-06 2016-09-20 GlobalFoundries, Inc. Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating same
US10290341B2 (en) * 2017-02-24 2019-05-14 Micron Technology, Inc. Self-reference for ferroelectric memory
WO2021195997A1 (en) 2020-03-31 2021-10-07 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory device and method for forming the same
CN111931385B (zh) * 2020-09-15 2024-12-13 国网四川省电力公司电力科学研究院 一种温度对电介质累积效应影响的试验评估方法
US12255225B2 (en) * 2020-09-25 2025-03-18 Intel Corporation Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes
CN114229968B (zh) * 2021-11-22 2023-03-14 清华大学 电芬顿装置和处理污染物的方法
CN114203905A (zh) * 2021-12-09 2022-03-18 北京超弦存储器研究院 一种铁电器件的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001181089A (ja) * 1999-12-28 2001-07-03 Murata Mfg Co Ltd 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法
JP2001230389A (ja) * 1999-12-28 2001-08-24 Hynix Semiconductor Inc ルテニウム電極を含む半導体メモリ素子及びその製造方法
JP2006236965A (ja) * 2004-07-15 2006-09-07 Ngk Insulators Ltd 電子放出素子
JP2018110179A (ja) * 2016-12-31 2018-07-12 株式会社Flosfia 正孔輸送層形成用組成物

Also Published As

Publication number Publication date
CN1309814A (zh) 2001-08-22
JP2005311385A (ja) 2005-11-04
KR100419683B1 (ko) 2004-02-21
TW449794B (en) 2001-08-11
EP1099242A1 (en) 2001-05-16
WO2000001000A1 (en) 2000-01-06
US6541375B1 (en) 2003-04-01
KR20010103555A (ko) 2001-11-23
CN1184666C (zh) 2005-01-12

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