CN1182574C - 半导体装置、薄膜载带及其制造方法 - Google Patents

半导体装置、薄膜载带及其制造方法 Download PDF

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CN1182574C
CN1182574C CN98800322.8A CN98800322A CN1182574C CN 1182574 C CN1182574 C CN 1182574C CN 98800322 A CN98800322 A CN 98800322A CN 1182574 C CN1182574 C CN 1182574C
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mentioned
metal film
resin
film
matsurface
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CN1220774A (zh
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桥元伸晃
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

本发明是使布线图形与树脂的粘附性提高的半导体装置，它具有：包括凸部(17)具有已作成图形的布线图形(16)的薄片(14)、电极(13)焊接到凸部(17)上的半导体芯片(12)和在凸部(17)以外的区域在布线图形(16)上设有的树脂(19)，布线图形(16)与树脂(19)之间的接触面为粗糙面。

Description

半导体装置、薄膜载带及其制造方法
技术领域
本发明涉及半导体装置、薄膜载带及其制造方法。
背景技术
众所周知，作为半导体装置的封装形态，是将已形成了外部电极的基板粘接到半导体芯片上边的结构。在这样的封装形态下，在基板与半导体芯片之间设置树脂使两者粘附一起的方式居多。并且，这样的封装形态，也适用于例如CSP(Chip Size/Scale Package)型、T-BGA(Tape Ball Grid Array)型等，进而，也应用于TAB(Tape AutomatedBonding)技术之中。
可是，在位于基板上的半导体芯片有源面一侧上边，形成与外部电极连接的布线图形的情况下，存在着布线图形与树脂之间粘附性差这样的问题。
特别是，在对布线图形进行半蚀刻形成凸部，将该凸部与半导体芯片的电极接合起来的情况下，由于蚀刻使布线图形变成了镜面，故与树脂之间的粘附性就明显恶化了。
发明内容
本发明的目的在于，提供一种使布线图形与树脂的粘附性提高的半导体装置、薄膜载带及其制造方法。
根据本发明的一种半导体装置的制造方法，其特征在于，包括下列工序：在绝缘薄膜上形成金属膜，把上述金属膜制成图形以形成布线图形，然后，为使上述金属膜的规定部分变成凸部，对上述规定部分以外区域的上述金属膜进行蚀刻，并将上述金属膜被蚀刻的表面加工成粗糙面的工序；在制成图形、蚀刻以及加工成粗糙面之后，使上述金属膜朝向半导体芯片有电极的面，配置上述绝缘薄膜，使上述凸部与上述电极位置重合并接合的工序；以及对上述金属膜的作粗糙面加工的面，进行至少一次的树脂的配置的工序。
倘若采用本发明，由于把布线图形加工成粗糙面，故与树脂的粘附性优良。
上述形成布线图形的工序还可以包括：
在上述绝缘薄膜上形成金属膜的工序，
然后以不同顺序，把上述金属膜制成图形形成上述布线图形，将上述金属膜的至少一部分加工成粗糙面的工序。
在本发明中，还可以在上述形成布线图形的工序中，对除上述凸部以外区域的上述金属膜进行蚀刻，使得上述金属膜的规定部分变成凸部，然后把上述金属膜的蚀刻过的面加工成粗糙面。
倘若采用此方法，则蚀刻金属膜而形成凸部。从而，被蚀刻后的面变成镜面，但由于再加工成粗糙面，形成微小的凹凸，变得与树脂的粘附性优良。另外，为了保护金属膜，或在制造工序的中途根据需要设置树脂。
上述金属膜也可以进行蚀刻，使得在与上述绝缘薄膜的接触面相反方向上突出上述凸部。
在这样的情况下，在制成图形、蚀刻以及加工成粗糙面之后，包括把上述金属膜朝向半导体芯片的有电极的面，配置上述绝缘薄膜，使上述凸部与上述电极位置重合并焊接的工序。
上述树脂也可以设置在上述绝缘薄膜与上述半导体芯片之间。
若用此方法，则由于绝缘薄膜与上述半导体芯片之间设有的树脂与加工成粗糙面的金属膜紧贴，故能够防止封装裂缝的发生。
上述绝缘薄膜具有器件孔，形成上述金属膜，使之在上述器件孔内露出，
也可以将上述金属膜蚀刻，使之在上述器件孔内，上述凸部在与上述绝缘薄膜的接触面方向上突出出来。
在本发明中，就是在上述蚀刻和加工成粗糙面的工序之后，且在上述制成图形的工序前，进行上述树脂的配置工序。
在上述树脂配置工序中，也可以在上述器件孔内，在上述金属膜的上述绝缘薄膜一侧的表面上，设置上述内固定树脂；从与上述内固定树脂的配置面相反面将上述金属膜制成图形，然后除去上述内固定树脂。
若用此方法，则因在加工成粗糙面后设置内固定树脂，所以金属膜与树脂之间的紧贴良好，可以在随后的制成图形中，防止蚀刻液进入金属膜与树脂之间。
上述绝缘薄膜具有器件孔，上述金属膜形成为，使之在上述器件孔内露出，
也可以将上述金属膜蚀刻，使之在上述器件孔内，上述凸部在与上述绝缘薄膜的接触面相反方向上突出出来。
在本发明的半导体装置的制造方法中，包括在制成图形、蚀刻和加工成粗糙面之后，把上述金属膜朝向具有半导体芯片的电极的表面，配置上述绝缘薄膜，使上述凸部与上述电极位置重合并进行焊接的工序。
在上述树脂配置工序中，也可以设置密封用树脂，以便与上述金属膜的被蚀刻面同时密封上述半导体芯片。
若用此方法，则用于密封的树脂可与加工成粗糙面的金属膜紧贴，而能够防止封装裂缝发生。
上述粗糙面加工也可以是使表面变得粗糙的化学研磨工序。
也可以在上述规定部分上设置抗蚀剂，蚀刻上述金属膜而形成上述凸部，在上述抗蚀剂除去前，进行上述粗糙面加工。
若用此方法，则在凸部上照样覆盖抗蚀剂进行粗糙面加工，因而不会将凸部加工成粗糙面。
本发明的薄膜载带的制造方法包括，在绝缘薄膜上，至少一部分形成加工成粗糙面的布线图形的工序。
倘若采用本发明，由于布线图形被加工成粗糙面，因而在制造半导体装置时与所设的树脂的粘附性优良。
本发明还可以包括：在上述绝缘薄膜上形成金属膜的工序，
然后以不同顺序，把上述金属膜制成图形形成上述布线图形，将上述金属膜的至少一部分加工成粗糙面的工序。
在本发明中，也可以除上述凸部外，对区域的上述金属膜进行蚀刻，使上述金属膜的规定部分成为凸部，然后，将上述金属膜的被蚀刻过的表面加工成粗糙面。
若用此方法，则对金属膜进行蚀刻形成凸部。所以，被蚀刻后的面变成镜面，但由于再加工成粗糙面，故形成微小的凹凸。可以提高用于保护金属膜的，或在制造工序的中途根据需要而设置的树脂与金属膜之间的粘附性。
上述金属膜也可以这样进行蚀刻，使上述凸部在与上述绝缘薄膜的接触面相反的方向上突出出来。
上述绝缘薄膜具有器件孔，上述金属膜形成为，使之在上述器件孔内露出，
也可以将上述金属膜蚀刻成，使之在上述器件孔内，上述凸部在与上述绝缘薄膜的接触面方向上突出出来。
就是在上述蚀刻和上述加工成粗糙面的工序之后，且在上述制成图形的工序前，进行上述树脂的配置工序。
在上述树脂配置工序中，也可以在上述器件孔内，在上述金属膜的上述绝缘薄膜一侧的表面上，设置上述内固定树脂；从与上述内固定树脂的配置面相反面将上述金属膜制成图形，然后除去上述内固定树脂。
若用此方法，则由于在加工成粗糙面后设置内固定树脂，故金属膜与树脂之间粘附良好，可以在随后的制成图形中，防止蚀刻液进入金属膜与树脂之间。
上述绝缘薄膜具有器件孔，将上述金属膜形成为，使之在上述器件孔内露出，
也可以将上述金属膜蚀刻成为，使之在上述器件孔内，上述凸部在与上述绝缘薄膜的接触面相反方向上突出出来。
上述粗糙面加工也可以是使表面变得粗糙的化学研磨工序。
也可以在上述规定部分上设置抗蚀剂，蚀刻上述金属膜，在上述抗蚀剂除去前，进行使上述表面变粗糙的工序。
若用此方法，则在凸部上照样覆盖着抗蚀剂下进行粗糙面加工，因而不会将凸部加工成粗糙面。
本发明的半导体装置具有：有布线图形的绝缘薄膜、上述布线图形上焊接有电极的半导体芯片以及设置于上述布线图形上的树脂，
上述布线图形，与上述树脂的接触面形成为粗糙面。
倘若采用本发明，则由于与布线图形上的树脂的接触面为粗糙面，所以两者可以紧贴并防止封装裂缝的发生。
在本发明中，上述布线图形含有凸部，将上述电极焊接到上述凸部上边，而上述凸部以外的区域，也可以在上述布线图形上设置上述树脂。
本发明的薄膜载带具有绝缘薄膜和已加工成粗糙面的布线图形。
在本发明中，上述布线图形含有凸部，在上述凸部的突出一侧的表面上，上述布线图加工成粗糙面也行。
附图说明
图1是表示第1实施例的半导体装置图。
图2A～图2E是说明第1实施例的半导体装置的制造工序图。
图3A～图3C是说明第1实施例的半导体装置的制造工序图。
图4A和图4B是说明第1实施例的半导体装置的制造工序图。
图5A和图5B是说明第2实施例的半导体装置的制造工序图。
图6A～图6C是说明第2实施例的半导体装置的制造工序图。
图7是表示第3实施例的半导体装置图。
图8是表示第4实施例的半导体装置图。
图9是表示装配适用本发明的半导体装置的电路基板图。
图10是表示备有装配适用本发明的半导体装置的电路基板的电子设备图。
具体实施方式
以下，参照附图说明有关本发明的最佳实施方案。
(第1实施例)
图1是表示第1实施例的半导体装置图。本半导体装置10是由，将在薄片14上形成的布线图形16的凸部17焊接到半导体芯片12的电极13上，并在布线图形16上设置外部端子18而构成。并且，在薄片14与半导体芯片12之间，设有用于缓和应力和保护半导体芯片有源面的树脂19。
详细地说，薄片14是由冲切薄膜载带形成的具有绝缘性的聚酰亚胺系树脂构成，在另一方的表面上，介以附图未示出的粘附剂，粘贴着布线图形16。
将布线图形16形成为，使得凸部17成为厚层，其它区域为薄层。通过形成了该凸部17，在布线图形16与半导体芯片12之间，形成了填充树脂19的间隙。另外，在与布线图形16的薄片14的粘接面相反一侧的面16a(即，与布线图形16的半导体芯片12相对置的面)上，如在图1中放大部分示出的那样，形成了微小的凹凸。
外部端子18由球状的焊料构成，从薄片14观察时，在与布线图形16的形成侧相反一侧表面，是从薄片14上突出来而形成的。详细地说，在薄片14上，形成可把焊料搭载于布线图形16上的程度微小的孔14a，从布线图形16通过孔14a向外侧突出的方式来形成外部端子18。
树脂19是由杨氏模量低起缓和应力作用的材料构成。可以举例说是，聚酰亚胺树脂、硅改性聚酰亚胺树脂、环氧树脂或硅改性环氧树脂等。该树脂19由于被设置在薄片14与半导体芯片12之间，故可以缓和对外部端子18从外部加上的应力。
如图1所示，树脂19也与布线图形16的面16a接触。如上述的那样，在布线图形16的面16a上形成了微小凹凸，而扩大了表面面积。另外，就这里所说的微小凹凸而言，具体地说，表面的粗糙度(凸部间的距离)在10μm以下是理想的。并且，在薄片14与布线图形16之间的粘接面一侧，为了提高两者(薄片14与布线图形16)的粘附性而在布线图形16上边形成了凹凸。布线图形16的面16a上边所形成的凹凸，比在布线图形16的面16a的相反面侧所形成的凹凸还要形成得细小。因而，面16a与树脂19之间的粘附性优良，使两者间成为难以发生封装裂纹的构造。
本实施例，如上述的这种构造，以下对其制造工序进行说明。图2A～图4B是说明本实施例的半导体装置的制造工序图。在该制造工序中，应用了TAB技术，并使用薄膜载带20。这里所说的薄膜载带，是具有绝缘性和可挠性的长条状薄膜，使用聚酰亚胺、玻璃环氧树脂、BT树脂或聚酯系列树脂等材料制成。另外，在半导体芯片安装前或安装后某一时间，对薄膜载带20的一部分进行冲切(切离)而形成薄片14(参照图1)。
首先，如图2A所示，在薄膜载带20的一个面(这里使用背面)上涂上粘接剂22；如图2B所示，借助于冲床冲孔或激光加工或化学腐蚀等所希望的方法，在薄膜载带20上形成孔14a等开口。孔14a，如图1所示用作设置外部端子18。
而且，如图2C所示，通过粘接剂22，把作为金属膜的铜箔24附着于也包括象薄膜载带20的孔14a之类整个背面上边。按规定形状将铜箔24制成布线图形，从此，进行图2D以后的工序。
另外，在本实施例中，虽然在张贴铜箔24前形成孔14a等开口，但是不限于此，在张贴了铜箔24之后进行开口工序也行。根据本方法，不会变成处理粘附了未硬化粘接剂22的薄膜载带20的困难工序，而是成为粘接剂22的硬化结束，处理铜箔24张贴也结束了的薄膜载带20的工序。因此，一定程度粗糙处理是可以的，但是不限定工序，而具有增加孔14a等形成工序的自由度的效果。并且，在这样的情况下，由于在张贴了铜箔24后在铜箔24中未打开孔，而在薄膜载带20中形成孔14a，所以使用激光加工、化学腐蚀等的方法居多。
其次，如图2D所示，在薄膜载带20上边涂覆抗蚀剂26，对铜箔24进行蚀刻，如图2E所示，形成规定的图形(示于图1的布线图形16)。
详细地说，在薄膜载带20的两个面上边涂覆抗蚀剂26，进行曝光和显影，以便除去要蚀刻的区域的抗蚀剂26，在没有盖上抗蚀剂26的区域中对铜箔24进行蚀刻。为了进行蚀刻，使用已知的蚀刻剂(例如，氯化二铁、氯化二铜等的水溶液)。
或者，用加成(添加)法来代替蚀刻那样的减层(除去)法，形成布线图形16也行。例如，在薄膜载带20上边，用溅射法，按布线图形16的形状形成铜之类的金属膜，再用电解电镀法在其上形成厚金属膜也行。
而且，除去布线图形16一侧的抗蚀剂26，如图3A所示，给形成布线图形16的凸部17(参照图1)的区域上边涂覆抗蚀剂28。详细地说，通过曝光和显影，作成为只在该区域上留下抗蚀剂28。
其次，如图3B所示，在厚度方向对布线图形16进行半蚀刻。该蚀刻，比从图2D到图2E状态时，要缩短进行时间。而且，布线图形16，在没有盖上抗蚀剂28的区域变成薄层区，而在盖上了抗蚀剂28的区域变成相对地厚层区。如果除去与抗蚀剂26和布线图形16相反侧面的抗蚀剂28，则如图3B所示，形成凸部17。
在这里，用蚀刻法形成布线图形16的表面，变成象镜面一样。即，由于使用蚀刻液的化学方法来蚀刻布线图形16，蚀刻后的面16a变成了镜面。
因此，在本实施例中，如图4A中放大部分所示，以该面16a加工成粗糙面为特征。详细地说，通过使表面变成粗糙表面的化学研磨工序，在面16a上边形成了微小的凹凸。因此，可以提高树脂19(参照图1)与面16a之间的粘附性，即锚环性。另外，在化学研磨工序中，可以使用例如CPE-750(三菱ガス化学)之类。
或者，作为加工成粗糙面的方法，也可以使用喷射研磨砂的喷砂法、O2等离子法。或者，在用电解电镀法形成布线图形16情况下，提高电流密度进行电镀，使表面变得粗糙也行。
其次，如图4B所示，使半导体芯片12的电极13与布线图形16的凸部17位置重合，将两者连接起来。详细地说，用焊接工具100，从薄膜载带20的上边对着电极13，边挤压凸部17边施加超声波振动，采用产生构成凸部17的铜(Au)与构成电极13的铝(Al)的合金(Au/Al)的办法来进行。
另外，在本实施例中，由于在除去凸部17上的抗蚀剂28(参照图3B)后进行化学研磨工序，所以仅布线图形16上受过蚀刻的面16a不变，而凸部17的表面加工成了粗糙面。所以，容易造成由超声波振动而引起的凸部17的塑性变形，故能迅速进行凸部17与电极13之间的连接工序。
在凸部17的表面不需要加工成粗糙面的情况下，可在除去凸部17上的抗蚀剂28前对应进行化学研磨工序。
然后，在薄膜载带20与半导体芯片12之间，注入树脂19(参照图1)并使之热硬化，在孔14a内填充焊料形成外部端子(焊锡球)18。
而且，可以从薄膜载带20中冲切出薄片14，得到图1中所示的半导体装置10。
另外，在本实施例中，如图4B所示，虽然应用了B-TAB型的接合方法，但是使用众所周知的其它方法，例如使用各向异性导电粘附剂进行粘接的方法也行。并且还有，作为公知的方法，也可以使用通常的TAB型接合方法(接合布线图形16与已形成凸部的电极13的方法)。
(第2实施例)
图5A～图6C是说明第2实施例的半导体装置的制造工序图。本实施例是将本发明应用于TAB技术的例子。如图6C所示，半导体装置30由把形成于薄片34上的布线图形36的凸部37接合到半导体芯片32的电极33上而构成。为了密封薄片34与半导体芯片32，设有树脂39。即使在本实施例中，也应用TAB技术，从示于图6B的薄膜载带40中冲切形成薄片34。
详细地说，在薄膜载带40上，形成了器件孔40a、输送孔40b和外引线孔40c。而且，在薄膜载带40中，形成了多个布线图形36。各布线图形36包括内引线36a和外引线36b。接着就进行布线图形36往薄膜载带40上的形成。
首先，如图5A所示，用附图未示出的粘附剂，把铜箔42粘附在已形成了输送孔40b和外引线孔40c等的薄膜载带40上。在铜箔42上，在靠近器件孔40a的内侧，形成与该器件孔40a相似形状的矩形孔42a，该矩形孔42a以外的区域，变成为覆盖薄膜载带40的外引线孔40c。
而且，在从器件孔40a伸向内侧的区域中进行蚀刻，使得铜箔42的一部分成为薄层，将该蚀刻后的表面加工成粗糙面。也就是，如图5B所示，在铜箔42中的薄膜载带40一侧的表面上，留下顶端部分进行蚀刻，形成槽44。另外，图5B与图5A的B-B线剖面对应。而且，将槽44的底面44a加工成粗糙面。蚀刻和粗糙面加工的方法，因与上述第1实施例同样，故详细内容从略。
因为形成这个槽44，故在器件孔40a内，在铜箔42的顶端部分形成相对地厚的凸部46。
其次，如图6A所示，在器件孔40a内，从槽44和凸部46一侧把树脂48配置在铜箔42上。也就是，用树脂48内部固着铜箔42的薄膜载带40一侧的表面。
而且，从与薄膜载带40相反侧的表面，用蚀刻液把铜箔42制成图形，如图6B所示，形成布线图形36。
其中，在铜箔42中，形成槽44和凸部46的部分成为内引线36a。还有，在成为该内引线36a的部分，由于将铜箔42的面44a加工成粗糙面，所以可与树脂48紧贴。因此，在将铜箔42加工成粗糙面时，防止蚀刻液蔓延，或内引线36a的宽度变狭，就不会断线。
而且，可以使用所得到的薄膜载带40，装配半导体芯片32，以树脂39密封半导体芯片32和内引线36a，冲切薄膜载带40，而得到具有薄片34的半导体装置30。
在这里，树脂39也与面44a紧贴，因而可防止封装破裂。
另外，对本实施例的外部端子部分若加以改变，也可以制造出T-BGA(Tape Grid Array)型的半导体装置。
(第3实施例)
图7是表示第3实施例的半导体装置。该图示出的半导体装置50是由将形成于薄片54上的布线图形56的凸部57与半导体芯片52的电极53接合起来而构成的。并且，为了密封薄片54和半导体芯片52，设有树脂58。
本实施例凸部57的形成位置与上述第2实施例不同。也就是，在本实施例中，在与布线图形56的薄片54相反侧表面上，形成凸部57。
即使在本实施例中，布线图形56中的蚀刻面56a与树脂58也能紧贴，防止封装裂缝。
(第4实施例)
图8是表示第4实施例的半导体装置。该半导体装置60是由将形成于薄片64上的布线图形66的凸部67与半导体芯片62的电极63接合起来，并在布线图形66上设置外部端子68而构成的。并且，在薄片64与半导体芯片62之间，注入了用于缓和应力的树脂65。
其中，由于凸部67与上述实施例同样来形成，所以蚀刻面为镜面，通过对其加工成粗糙面，使之与树脂65的粘附性提高，可防止封装裂缝。
在本实施例中，形成了比半导体芯片62的外形要大的薄片64和布线图形66，不但在该半导体芯片62的电极63的内侧也在外侧设置了外部端子68。也就是，半导体装置60是所谓FAN-IN/OUT型的器件。
还有，本实施例的特征在于，在半导体芯片62的周围，对于薄片64，从布线图形66的上边，介以绝缘性的粘结剂70设置保持板69。保持板69具有平坦性，是具有能维持其强度程度的构件。
这样以来，配置于半导体芯片62外侧的外部端子68也改善了平面稳定性。
(其它实施例)
在上述的任一个实施例中，在布线图形上也都形成了凸部，但本发明也可以应用到没有凸部的场合。即，例如，布线图形为没有进行半蚀刻的场合，也可以通过将布线图形加工成粗糙面，来提高与树脂的粘附性。在这样的情况下，对铜箔等的金属膜进行加工成粗糙面之后，将其作成布线图形的形状也行。
在图9中，示出装配了应用本发明的半导体装置1100的电路基板1000。就电路基板1000来说，一般是使用例如玻璃环氧树脂基板等的有机系列基板。在电路基板1000上形成了由铜构成的布线图形，而成为所希望的电路，通过机械上连接这些布线图形和半导体装置1100的凸点电极，来实现其电导通。这时，半导体装置1100就具有吸收因与上述那种外部的热膨胀差而产生的变形的构造，即使在电路基板1000上装配本半导体装置1100也可以提高连接时及其以后的可靠性。并且进而，若对半导体装置1100的布线也找找窍门，则可以提高连接时和连接后的可靠性。另外，装配面积也可以缩小到以裸片装配的面积。因此，若把该电路基板1000用于电子设备中，则可实现电子设备自身的小型化。并且，可以在同一面积内确保更多装配空间，还能达到高性能。
而且，作为具备这种电路基板1000的电子设备，在图10中，示出了笔记本型个人计算机1200。
另外，上述实施例是将本发明应用于半导体装置的例子，如果是与半导体装置同样需要多个凸点电极的面装配用电子部件，则不管有源部件还是无源部件，都可以应用本发明。作为电子部件，例如有电阻器、电容器、线圈、振荡器、滤波器、温度传感器、热敏电阻、变阻器、电位器或熔断器等。

Claims (19)

1.一种半导体装置的制造方法，其特征在于，包括下列工序：
在绝缘薄膜上形成金属膜，把上述金属膜制成图形以形成布线图形，然后，为使上述金属膜的规定部分变成凸部，对上述规定部分以外区域的上述金属膜进行蚀刻，并将上述金属膜被蚀刻的表面加工成粗糙面的工序；
在制成图形、蚀刻以及加工成粗糙面之后，使上述金属膜朝向半导体芯片有电极的面，配置上述绝缘薄膜，使上述凸部与上述电极位置重合并接合的工序；以及
对上述金属膜的作粗糙面加工的面，进行至少一次的树脂的配置的工序。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于：这样对上述金属膜进行蚀刻，使得在与上述绝缘薄膜的接触面相反方向上突出上述凸部。
3.根据权利要求2所述的半导体装置的制造方法，其特征在于：
将上述树脂设置在上述绝缘薄膜与上述半导体芯片之间。
4.一种半导体装置的制造方法，其特征在于：包括
在具有器件孔的绝缘薄膜上形成金属膜，使金属膜在上述绝缘薄膜的上述器件孔内露出，并为使上述金属膜的上述器件孔内的规定部分变成凸部，将上述金属膜的上述器件孔内的区域之中除上述规定部分外的区域蚀刻，并将上述金属膜的被蚀刻的表面作粗糙面加工，然后，将上述金属膜制成图形以形成布线图形的工序；
在蚀刻、加工成粗糙面和制成图形之后，使上述金属膜朝向具有半导体芯片电极的表面，配置上述绝缘薄膜，使上述凸部与上述电极位置重合并进行接合的工序；以及
对上述金属膜的作粗糙面加工的面，进行至少一次的树脂的配置的工序。
5.根据权利要求4所述的半导体装置的制造方法，其特征在于：在上述蚀刻和加工成粗糙面的工序之后，且在上述制成图形的工序前，进行与上述树脂不同的第2树脂的配置工序；以及
在上述第2树脂的配置工序中，在上述器件孔内，在上述金属膜的上述绝缘薄膜一侧的表面上，设置上述第2树脂；从与上述第2树脂的配置面相反面，将上述金属膜制成图形，然后除去上述第2树脂。
6.根据权利要求4所述的半导体装置的制造方法，其特征在于：
将上述金属膜蚀刻，以使上述凸部向与上述绝缘薄膜的接触面的方向上突出。
7.根据权利要求4所述的半导体装置的制造方法，其特征在于：
将上述金属膜蚀刻，以使上述凸部向与上述绝缘薄膜的接触面相反的方向上突出。
8.根据权利要求4所述的半导体装置的制造方法，其特征在于：
在上述树脂配置工序中，将密封用树脂设置为，使之与上述金属膜的已蚀刻的面一起，密封上述半导体芯片。
9.根据权利要求1至8的任一项所述的半导体装置的制造方法，其特征在于：
上述粗糙面加工是使表面变得粗糙的化学研磨工序。
10.根据权利要求1至8的任一项所述的半导体装置的制造方法，其特征在于：
在上述规定部分上设置抗蚀剂，来蚀刻上述金属膜形成上述凸部，在上述抗蚀剂除去前，进行上述粗糙面加工。
11.一种薄膜载带的制造方法，包括在绝缘薄膜上形成金属膜的工序；以及
将上述绝缘薄膜上的上述金属膜的表面进行粗糙面加工的工序，
其特征在于：
为使上述金属膜的规定部分成为凸部，对上述凸部以外区域的上述金属膜进行蚀刻，然后，将上述金属膜的蚀刻过的表面加工成粗糙面。
12.根据权利要求11所述薄膜载带的制造方法，其特征在于：将上述金属膜蚀刻成为，使得上述凸部向与上述绝缘薄膜的接触面相反的方向上突出出来。
13.根据权利要求11所述薄膜载带的制造方法，其特征在于：
上述绝缘薄膜具有器件孔，将上述金属膜形成为，使之在上述器件孔内露出，
将上述金属膜蚀刻，使之在上述器件孔内，上述凸部向与上述绝缘薄膜的接触面方向上突出。
14.根据权利要求13所述薄膜载带的制造方法，其特征在于：
在上述蚀刻和上述加工成粗糙面的工序之后，还包括把上述金属膜制成图形，形成布线图形的工序；
在上述蚀刻和上述粗糙面加工的工序之后，且在上述制成图形的工序前，进行树脂的配置工序；以及
在上述树脂配置工序中，在上述器件孔内，在上述金属膜的上述绝缘薄膜一侧的表面上，设置上述树脂；从与上述树脂的配置面的相反面，将上述金属膜制成图形，然后除去上述树脂。
15.根据权利要求11所述薄膜载带的制造方法，其特征在于：
上述绝缘薄膜具有器件孔，将上述金属膜形成为，使之在上述器件孔内露出，以及
将上述金属膜蚀刻，使之在上述器件孔内，上述凸部向与上述绝缘薄膜的接触面的相反方向上突出。
16.根据权利要求11至15的任一项所述薄膜载带的制造方法，其特征在于：
上述粗糙面加工是使表面变得粗糙的化学研磨工序。
17.根据权利要求11至15的任一项所述薄膜载带的制造方法，其特征在于：
在上述规定部分上设置抗蚀剂，蚀刻上述金属膜，在除去上述抗蚀剂前，进行使上述表面变粗糙的工序。
18.一种半导体装置，其特征在于，具有：
具有布线图形的绝缘薄膜；
具有与上述布线图形连接的电极的半导体芯片；以及
设于上述布线图形上的树脂；
上述布线图形具有第1部分和比上述第1部分厚的第2部分；
至少上述第1部分的表面加工为粗糙面。
19.一种薄膜载带，其特征在于，具有：
绝缘薄膜；以及
在上述绝缘薄膜上、作为粗糙面加工的布线图形；
上述布线图形具有第1部分和比上述第1部分厚的第2部分；
至少上述第1部分的表面加工为粗糙面。
CN98800322.8A 1997-03-21 1998-03-18 半导体装置、薄膜载带及其制造方法 Expired - Fee Related CN1182574C (zh)

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US6627994B2 (en) 2003-09-30
WO1998043289A1 (en) 1998-10-01
KR100426883B1 (ko) 2004-06-30
KR20000010953A (ko) 2000-02-25
CN1220774A (zh) 1999-06-23
US6316288B1 (en) 2001-11-13
HK1020391A1 (en) 2000-04-14
JP2007150374A (ja) 2007-06-14
US20010040291A1 (en) 2001-11-15
AU6418998A (en) 1998-10-20
TW400592B (en) 2000-08-01

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