CN117855237A - 光检测装置 - Google Patents
光检测装置 Download PDFInfo
- Publication number
- CN117855237A CN117855237A CN202410023889.9A CN202410023889A CN117855237A CN 117855237 A CN117855237 A CN 117855237A CN 202410023889 A CN202410023889 A CN 202410023889A CN 117855237 A CN117855237 A CN 117855237A
- Authority
- CN
- China
- Prior art keywords
- pixel
- wiring
- spad
- electrically connected
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-231585 | 2016-11-29 | ||
| JP2016231585A JP7055544B2 (ja) | 2016-11-29 | 2016-11-29 | センサチップおよび電子機器 |
| PCT/JP2017/041010 WO2018101033A1 (en) | 2016-11-29 | 2017-11-15 | Sensor chip and electronic device |
| CN201780053235.9A CN109643722B (zh) | 2016-11-29 | 2017-11-15 | 传感器芯片和电子装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780053235.9A Division CN109643722B (zh) | 2016-11-29 | 2017-11-15 | 传感器芯片和电子装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117855237A true CN117855237A (zh) | 2024-04-09 |
Family
ID=60574676
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780053235.9A Active CN109643722B (zh) | 2016-11-29 | 2017-11-15 | 传感器芯片和电子装置 |
| CN202410023889.9A Pending CN117855237A (zh) | 2016-11-29 | 2017-11-15 | 光检测装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780053235.9A Active CN109643722B (zh) | 2016-11-29 | 2017-11-15 | 传感器芯片和电子装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10672818B2 (enExample) |
| EP (1) | EP3549169A1 (enExample) |
| JP (1) | JP7055544B2 (enExample) |
| CN (2) | CN109643722B (enExample) |
| WO (1) | WO2018101033A1 (enExample) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7055544B2 (ja) | 2016-11-29 | 2022-04-18 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
| JP7116591B2 (ja) | 2018-05-18 | 2022-08-10 | キヤノン株式会社 | 撮像装置及びその製造方法 |
| JP2021158128A (ja) * | 2018-06-25 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| JP2020013907A (ja) * | 2018-07-18 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
| TWI837140B (zh) * | 2018-07-18 | 2024-04-01 | 日商索尼半導體解決方案公司 | 受光元件及測距模組 |
| TW202006788A (zh) * | 2018-07-18 | 2020-02-01 | 日商索尼半導體解決方案公司 | 受光元件及測距模組 |
| JP7178819B2 (ja) | 2018-07-18 | 2022-11-28 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
| CN210325802U (zh) * | 2018-07-18 | 2020-04-14 | 索尼半导体解决方案公司 | 受光元件以及测距模块 |
| JP2020048019A (ja) | 2018-09-18 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距システム |
| TWI814902B (zh) * | 2018-09-21 | 2023-09-11 | 日商索尼半導體解決方案公司 | 攝像裝置 |
| JP2020068289A (ja) * | 2018-10-24 | 2020-04-30 | キヤノン株式会社 | 光電変換装置、撮像システム、移動体、および積層用の半導体チップ |
| TWI845592B (zh) * | 2019-01-30 | 2024-06-21 | 日商索尼半導體解決方案公司 | 受光裝置及測距系統 |
| EP3930012B1 (en) | 2019-02-21 | 2023-07-12 | Sony Semiconductor Solutions Corporation | Avalanche-photodiode sensor and distance measurement device |
| JP7327949B2 (ja) | 2019-02-27 | 2023-08-16 | キヤノン株式会社 | 光電変換装置、光電変換システム、及び移動体 |
| US12235392B2 (en) | 2019-03-06 | 2025-02-25 | Sony Semiconductor Solutions Corporation | Sensor and distance measurement apparatus having an avalanche photodiode and on-chip lens |
| JP7273545B2 (ja) | 2019-03-07 | 2023-05-15 | 株式会社東芝 | 受光装置及び距離計測装置 |
| JP2020149987A (ja) | 2019-03-11 | 2020-09-17 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
| WO2020189082A1 (ja) * | 2019-03-19 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | センサチップ、電子機器、及び測距装置 |
| JP2020167249A (ja) * | 2019-03-29 | 2020-10-08 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび測距装置 |
| US11855105B2 (en) | 2019-03-29 | 2023-12-26 | Sony Semiconductor Solutions Corporation | Solid-state imaging device and electronic device |
| JP7624387B2 (ja) * | 2019-04-08 | 2025-01-30 | ソニーセミコンダクタソリューションズ株式会社 | センサチップ及び電子機器 |
| US12433047B2 (en) | 2019-07-12 | 2025-09-30 | ActLight SA | Photodetector |
| US20220359584A1 (en) * | 2019-07-12 | 2022-11-10 | Sony Semiconductor Solutions Corporation | Photodetector |
| JP7445397B2 (ja) * | 2019-07-31 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
| JP7679169B2 (ja) | 2019-08-08 | 2025-05-19 | キヤノン株式会社 | 光電変換装置、光電変換システム |
| FR3100926A1 (fr) * | 2019-09-18 | 2021-03-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images réalisé en technologie 3D séquentielle |
| JP2021064711A (ja) * | 2019-10-15 | 2021-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| US11335825B2 (en) * | 2019-10-18 | 2022-05-17 | Imec Vzw | Single-photon avalanche diode and a sensor array |
| JP2021068811A (ja) * | 2019-10-24 | 2021-04-30 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
| JP7517804B2 (ja) * | 2019-11-06 | 2024-07-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距装置 |
| JP7757026B2 (ja) | 2019-11-20 | 2025-10-21 | キヤノン株式会社 | 撮像装置、撮像システム、および移動体 |
| FR3103635B1 (fr) | 2019-11-26 | 2025-03-14 | Commissariat Energie Atomique | Capteur d'images comportant une pluralité de photodiodes SPAD |
| US12119421B2 (en) * | 2019-12-25 | 2024-10-15 | Sony Semiconductor Solutions Corporation | Photodetector |
| JP7471817B2 (ja) * | 2019-12-27 | 2024-04-22 | 浜松ホトニクス株式会社 | 増倍型イメージセンサ |
| WO2021161687A1 (ja) * | 2020-02-10 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | センサ装置、測距装置 |
| JP7645226B2 (ja) | 2020-02-18 | 2025-03-13 | ソニーグループ株式会社 | センシングシステム、および、測距システム |
| US11554589B2 (en) | 2020-02-19 | 2023-01-17 | Canon Kabushiki Kaisha | Liquid container and method of manufacturing the same |
| TWI872166B (zh) * | 2020-03-16 | 2025-02-11 | 日商索尼半導體解決方案公司 | 受光元件及測距系統 |
| JP2021163821A (ja) * | 2020-03-31 | 2021-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| KR20210130868A (ko) * | 2020-04-22 | 2021-11-02 | 삼성전자주식회사 | 이미지 센서 |
| CN115398627A (zh) | 2020-04-24 | 2022-11-25 | 索尼半导体解决方案公司 | 光检测器及电子装置 |
| JP2021193718A (ja) * | 2020-06-08 | 2021-12-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子 |
| JP7527853B2 (ja) | 2020-06-11 | 2024-08-05 | キヤノン株式会社 | 光電変換装置 |
| DE112021003352T5 (de) * | 2020-06-24 | 2023-04-13 | Sony Semiconductor Solutions Corporation | Halbleitervorrichtung und elektronische vorrichtung |
| US11735677B2 (en) | 2020-07-20 | 2023-08-22 | ActLight SA | Photodetectors and photodetector arrays |
| CN116134297A (zh) * | 2020-07-21 | 2023-05-16 | 索尼半导体解决方案公司 | 光接收元件和电子设备 |
| CN112038360A (zh) * | 2020-09-08 | 2020-12-04 | 上海大芯半导体有限公司 | 距离传感器像素阵列结构、距离传感器及工作方法 |
| CN111968999B (zh) * | 2020-09-08 | 2025-01-21 | 上海大芯半导体有限公司 | 堆栈式背照单光子雪崩二极管图像传感器 |
| JP2022047438A (ja) * | 2020-09-11 | 2022-03-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び電子機器 |
| JP2022089651A (ja) * | 2020-12-04 | 2022-06-16 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置 |
| JP7604204B2 (ja) | 2020-12-10 | 2024-12-23 | キヤノン株式会社 | 光電変換装置、撮像システム、移動体 |
| CN114641866A (zh) * | 2020-12-30 | 2022-06-17 | 深圳市大疆创新科技有限公司 | 感光传感器及其制作方法、可移动平台 |
| JP7614855B2 (ja) * | 2021-01-22 | 2025-01-16 | キヤノン株式会社 | 光電変換装置、光検出システム |
| TWI807248B (zh) * | 2021-01-22 | 2023-07-01 | 財團法人國家實驗研究院 | 具有增強感光效果之聚光結構 |
| US11594647B2 (en) * | 2021-04-21 | 2023-02-28 | National Applied Research Laboratories | Light-concentrating structure with photosensitivity enhancing effect |
| JP7746028B2 (ja) | 2021-04-28 | 2025-09-30 | キヤノン株式会社 | 光電変換装置及び光検出システム |
| US11784196B2 (en) | 2021-05-04 | 2023-10-10 | Globalfoundries Singapore Pte. Ltd. | Trenchless single-photon avalanche diodes |
| KR102880223B1 (ko) | 2021-05-18 | 2025-11-03 | 삼성전자주식회사 | 이미지 센서 |
| DE102022112711A1 (de) | 2021-05-21 | 2022-11-24 | Ifm Electronic Gmbh | TOF-Bauelement mit einer Avalanche-Photodiode und einem n-dotiertem Volumen |
| JP2023002152A (ja) * | 2021-06-22 | 2023-01-10 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法 |
| US20220026542A1 (en) * | 2021-07-14 | 2022-01-27 | Canon Kabushiki Kaisha | Optical detection apparatus and optical detection system |
| US12154992B2 (en) | 2021-08-13 | 2024-11-26 | Texas Instruments Incorporated | Photodiode integrated with circuit |
| US12183754B2 (en) * | 2021-08-24 | 2024-12-31 | Globalfoundries Singapore Pte. Ltd. | Single-photon avalanche diodes with deep trench isolation |
| US12453192B2 (en) * | 2021-08-31 | 2025-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Single-photon avalanche diode semiconductor device |
| US12266671B2 (en) * | 2021-10-21 | 2025-04-01 | Globalfoundries Singapore Pte. Ltd. | Photodetectors with a deep trench isolation region that includes a bragg mirror |
| KR20230063115A (ko) * | 2021-11-01 | 2023-05-09 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| WO2023084989A1 (ja) * | 2021-11-11 | 2023-05-19 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| US12317611B2 (en) | 2021-11-25 | 2025-05-27 | Canon Kabushiki Kaisha | Photoelectric conversion element and photoelectric conversion device |
| JP2023099395A (ja) * | 2022-01-01 | 2023-07-13 | キヤノン株式会社 | 光電変換装置、光電変換システム、および機器 |
| US12474453B2 (en) | 2022-01-20 | 2025-11-18 | ActLight SA | Control techniques for photodetector systems |
| JP7524407B2 (ja) * | 2022-03-04 | 2024-07-29 | ソニーセミコンダクタソリューションズ株式会社 | 光検出素子および電子機器 |
| US20230317758A1 (en) * | 2022-04-04 | 2023-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Isolation structures in image sensors |
| EP4307396A1 (en) * | 2022-07-11 | 2024-01-17 | STMicroelectronics (Research & Development) Limited | Single photon avalanche diode |
| WO2024048267A1 (ja) * | 2022-09-02 | 2024-03-07 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および測距装置 |
| CN115588708B (zh) * | 2022-10-17 | 2025-05-06 | 季华实验室 | 单光子雪崩二极管、光电探测器阵列及图像传感器 |
| JP2024070699A (ja) * | 2022-11-11 | 2024-05-23 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| US12494846B2 (en) | 2023-03-13 | 2025-12-09 | Ii-Vi Delaware, Inc. | Optoelectronic assembly |
| CN116709803B (zh) * | 2023-08-08 | 2023-11-24 | 北京维信诺科技有限公司 | 显示模组、显示模组的制造方法及电子设备 |
| US20250194277A1 (en) * | 2023-12-07 | 2025-06-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device with light retention structure |
| CN120302729B (zh) * | 2025-06-06 | 2025-09-19 | 杭州海康威视数字技术股份有限公司 | 雪崩二极管、像素晶圆、光探测器及其控制方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7230247B2 (en) * | 2002-03-08 | 2007-06-12 | Hamamatsu Photonics K.K. | Detector |
| JP2004273640A (ja) * | 2003-03-06 | 2004-09-30 | Sony Corp | 固体撮像素子及びその製造方法 |
| EP3002794B1 (en) | 2006-07-03 | 2020-08-19 | Hamamatsu Photonics K.K. | Photodiode array |
| JP4413940B2 (ja) * | 2007-03-22 | 2010-02-10 | 株式会社東芝 | 固体撮像素子、単板カラー固体撮像素子及び電子機器 |
| US7652257B2 (en) * | 2007-06-15 | 2010-01-26 | General Electric Company | Structure of a solid state photomultiplier |
| KR101545638B1 (ko) * | 2008-12-17 | 2015-08-19 | 삼성전자 주식회사 | 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법 |
| GB201014843D0 (en) * | 2010-09-08 | 2010-10-20 | Univ Edinburgh | Single photon avalanche diode for CMOS circuits |
| US20140167200A1 (en) * | 2012-12-19 | 2014-06-19 | Agency For Science, Technology And Research | Photodetector and method for forming the same |
| KR101964891B1 (ko) * | 2013-01-28 | 2019-08-07 | 삼성전자주식회사 | 실리콘 광증배관 디텍터 셀 |
| US9160949B2 (en) * | 2013-04-01 | 2015-10-13 | Omnivision Technologies, Inc. | Enhanced photon detection device with biased deep trench isolation |
| JP2014203961A (ja) * | 2013-04-04 | 2014-10-27 | ソニー株式会社 | 固体撮像装置およびその製造方法、ならびに電子機器 |
| JP2015026708A (ja) * | 2013-07-26 | 2015-02-05 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| JP6090060B2 (ja) | 2013-08-23 | 2017-03-08 | 株式会社豊田中央研究所 | シングルフォトンアバランシェダイオード |
| JP2015084392A (ja) * | 2013-10-25 | 2015-04-30 | 浜松ホトニクス株式会社 | 光検出器 |
| US9312401B2 (en) * | 2014-01-15 | 2016-04-12 | Omnivision Technologies, Inc. | Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications |
| JP6245474B2 (ja) * | 2014-04-21 | 2017-12-13 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器 |
| JP2016062996A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 光検出器 |
| US9685576B2 (en) * | 2014-10-03 | 2017-06-20 | Omnivision Technologies, Inc. | Back side illuminated image sensor with guard ring region reflecting structure |
| KR102728850B1 (ko) * | 2015-12-03 | 2024-11-13 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 및 촬상 장치 |
| US10014340B2 (en) * | 2015-12-28 | 2018-07-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked SPAD image sensor |
| JP6818875B2 (ja) * | 2016-09-23 | 2021-01-20 | アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． | 積層背面照射型ｓｐａｄアレイ |
| JP7058479B2 (ja) * | 2016-10-18 | 2022-04-22 | ソニーセミコンダクタソリューションズ株式会社 | 光検出器 |
| JP7055544B2 (ja) | 2016-11-29 | 2022-04-18 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
| JP6932580B2 (ja) * | 2017-08-04 | 2021-09-08 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| JP7327949B2 (ja) * | 2019-02-27 | 2023-08-16 | キヤノン株式会社 | 光電変換装置、光電変換システム、及び移動体 |
-
2016
- 2016-11-29 JP JP2016231585A patent/JP7055544B2/ja active Active
-
2017
- 2017-11-15 WO PCT/JP2017/041010 patent/WO2018101033A1/en not_active Ceased
- 2017-11-15 EP EP17809056.9A patent/EP3549169A1/en active Pending
- 2017-11-15 CN CN201780053235.9A patent/CN109643722B/zh active Active
- 2017-11-15 US US16/329,464 patent/US10672818B2/en active Active
- 2017-11-15 CN CN202410023889.9A patent/CN117855237A/zh active Pending
-
2020
- 2020-05-01 US US16/864,380 patent/US11411032B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109643722A (zh) | 2019-04-16 |
| US11411032B2 (en) | 2022-08-09 |
| US10672818B2 (en) | 2020-06-02 |
| JP2018088488A (ja) | 2018-06-07 |
| CN109643722B (zh) | 2024-01-16 |
| US20200258930A1 (en) | 2020-08-13 |
| JP7055544B2 (ja) | 2022-04-18 |
| US20190252442A1 (en) | 2019-08-15 |
| EP3549169A1 (en) | 2019-10-09 |
| WO2018101033A1 (en) | 2018-06-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109643722B (zh) | 传感器芯片和电子装置 | |
| TWI871309B (zh) | 感測器晶片及電子機器 | |
| US11303834B2 (en) | Solid-state imaging device and electronic apparatus with enhanced conversion efficiency | |
| TWI837140B (zh) | 受光元件及測距模組 | |
| TWI846709B (zh) | 受光元件及測距模組 | |
| US20240128300A1 (en) | Semiconductor device and electronic apparatus | |
| CN110739321A (zh) | 受光元件以及测距模块 | |
| US12317614B2 (en) | Semiconductor device and electronic apparatus including PN junction portions | |
| US20230268365A1 (en) | Light reception element and electronic device | |
| US20230132945A1 (en) | Photodetector and electronic apparatus | |
| JP7524407B2 (ja) | 光検出素子および電子機器 | |
| US20240063237A1 (en) | Solid-state imaging device and electronic equipment | |
| JP7285351B2 (ja) | 光検出素子および電子機器 | |
| KR20190062790A (ko) | 백사이드 신틸레이터가 적용된 디지털 엑스레이 검출기용 기판, 디지털 엑스레이 검출기 및 이의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |