CN1173391C - 接合装置 - Google Patents
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Abstract
一种接合装置。接合装置在引线接合工序时操作孔周围的覆罩翘起,所以有翘起的覆罩与焊接电极间误产生瞬间放电的问题。本发明的具有识别装置的接合装置21,对位于操作孔24周围的覆罩23的一部分231作了绝缘处理。而且操作区内,用基板放置台22内的加热器30维持例如230℃左右的高温,由于经常放置在高温下,覆罩23的一部分471翘起。但由于覆罩23的一部分231作了绝缘处理,所以能实现与焊接电极28不误产生瞬间放电的接合装置。
Description
技术领域
本发明涉及防止形成操作区的覆罩与焊接电极间误产生瞬间放电的接合装置。
背景技术
现有半导体装置中,在引线架上形成的装载部进行焊线时,是每各装载部进行,作为其一个实施例,例如特开昭63-29535号公报公布了其接合装置。
如图7所示,加热台部1上放置有装着芯片10的晶体管引线架2。加热台部1上的引线架2的上部设置有接合臂3,接合臂3的前端设置有毛细管4。该毛细管4上设置有金属线5,为在毛细管4近旁进行形成金属线5的焊球,设置有焊接电极6。
而且,该热压接形接合装置上设置有接线位置识别部7、接合头驱动部8,接合头驱动部8设制为可沿x、y方向运转和连动运转,为将接合部局部加热还设置有局部加热装置9。作为该局部加热装置9,例如可使用激光装置。
下面说明一下动作。被加热台部1加热的引线架2,根据接线位置识别部7的信息、按预先编的程序运转接合头驱动部8的同时,使局部加热装置9只在接合中工作,边补充芯片10上的不足热量边作焊球接合,然后,使毛细管4向引线架2移动,再次使局部加热装置9只在接合中工作,边补充引线架2的热量不足边进行针脚形接合,之后使被焊接电极6切断的金属线5的前端形成焊球形。
接着在芯片10上的另一电极上,使局部加热装置9只在接合中工作,边补充芯片10上的不足热量边作焊球接合,然后,使毛细管4向引线架移动,再次使局部加热装置9只在接合中工作,边补充引线架2的热量不足边进行针脚形接合,然后使被焊接电极6切断的金属线5的前端形成焊球形。由于以上的边补充接合部热量不足边接合,所以能得到高质量的接线。而且,若把超声波也并用时,能得到更高质量的接线。
上述实施中是以晶体管芯片时表示的,但芯片不限于此,二极管、IC等也可,本发明作为任意半导体装置的接线器都能适用。
如上所述,装载部形成在完全是冲压件的引线架2上时,引线接合时仅该装载部例如加热至250℃左右便可。即由于引线架2整体,平常并不是处于高温状态而是可部分加热,所以上述接合装置中不必要特别地考虑引线架2的表面氧化等问题。
但本发明实施例中详情是把小面积上有多个装载部的集成块,在引线架等上形成时,直到一个集成块的所有引线接合工序结束前,引线架等一直维持高温状态。因此,有集成块的引线架等,由于长时间被放置在上述高温状态下,就氧化了。因此,为防止上述引线架2等的氧化,有必要把处于高温状态的引线架置于充满惰性气体例如氮气的空间中进行预防。
因此为形成该空间,就必须在放置引线架的操作台上形成充填惰性气体的空间,而且在其空间上部必须形成识别用及引线接合用的操作孔。此时,因空间内被高温加热的惰性气体形成上升气流而从操作孔冒出到外部,此时形成有操作孔的覆罩周边,因高温影响而翘起。其结果就是,焊接电极6与翘起的覆罩间误产生瞬间放电,有金属线5的前端不能形成焊球部的课题。
发明内容
本发明是鉴于上述现有课题而开发的,本发明接合装置包括:基板放置台;覆罩,在所述基板放置台上覆盖操作区;操作孔,设在所述覆罩上面;毛细管及焊接电极,设在所述操作孔的上面;在所述覆罩上对所述操作孔周边实施绝缘处理,防止所述焊接电极与所述覆罩间产生瞬间放电。
本发明接合装置,最好在所述覆罩上仅在具有距所述焊接电极前端最近侧边的所述操作孔周边作绝缘处理。
本发明接合装置,最好在所述覆罩上用贴耐热绝缘带来作绝缘处理。
本发明接合装置,最好所述耐热绝缘带是由氟系树脂构成的带。
本发明接合装置,最好在所述覆罩上形成由氟系树脂构成的绝缘层来作绝缘处理。
本发明接合装置,最好在所述覆罩上用贴合绝缘板来作绝缘处理。
本发明接合装置,最好所述绝缘板是陶瓷板。
本发明接合装置,最好形成所述操作孔时的冲切面位于所述覆罩的内面。
还有,为解决上述课题,本发明接合装置包括:基板放置台,有加热功能;覆罩,在所述基板放置台上覆盖操作区;操作孔,设在所述覆罩上面;照明,设在所述操作孔上方;毛细管及焊接电极,设在所述照明的侧面;识别图形用摄相机,装在设于所述照明上方的镜筒内;所述覆罩是由导电板覆盖箝位器上面而构成的,所述导电板上对设于所述导电板的所述操作孔周边作绝缘处理,防止所述焊接电极与所述导电板间产生瞬间放电。
本发明接合装置中,电路装置的制造方法最好是所述导电板由不锈钢构成。
附图说明
图1是说明具有识别装置的本发明接合装置的图;
图2是说明具有识别装置的本发明接合装置的图;
图3是简略说明具有识别装置的本发明接合装置的图;
图4是说明具有识别装置的本发明接合装置的图;
图5是说明具有识别装置的本发明接合装置的图;
图6是说明具有识别装置的本发明接合装置的图;
图7是说明具有识别装置的现有接合装置的图。
具体实施方式
参照图1~图6详细说明本发明的接合装置。
本发明实施例中,识别装置与接合装置连动、形成一台具有识别装置的接合装置21。
如图1所示,接合装置21的主要构造是:放置台22;覆罩23,将放置台22上的操作空间覆盖;操作孔24,设在覆罩23上面;环状照明25,设置在操作孔24上方;接合臂26,设置在环状照明25的侧面;毛细管27,设在接合臂26的前端;焊接电极28,设在毛细管27的近旁;镜筒29,设在环状照明25的上方;识别摄相机及防止闪晃送风机构31,设置在镜筒29内、识别摄相机图中未示出。而且本发明的特征是设有操作24的覆罩23周边部231作了绝缘处理。
下面,边说明各个结构要素的特征边说明其动作。
首先,放置台22上放置具有多个装载部的引线架34,为通过加热引线架34提高线的接合性,具备加热器30的功能。用该加热器30能在放置台22及覆罩23构成的操作空间内,在引线接合工序中间能维持例如230℃左右的高温状态。
下面,详细情况后述,但如图4所示,该覆罩23的结构为覆罩23的一部分由箝位器40构成,该箝位器40上面有例如用不锈钢制的板47作的盖。而且从箝位器40将惰性气体例如4公升/分的氮气向覆罩23内吹入。该吹入量根据操作用途进行变更。覆罩23的上面设有操作孔24。通过该操作孔24,在引线接合工序时进行图形识别、引线接合。
下面说明环状照明25及镜筒29。镜筒29设置在环状照明25的上方。通过操作孔24被环状照明25照射的引线架34和半导体元件35,由于反射率的不同,能够识别。用设置在镜筒29内的识别摄相机识别该反射光,能在引线架34上识别图形。这时,由于照明是用的环状照明25,所以对引线架34、半导体元件35能不偏斜照射,不产生影子,能进行更精密的识别图形。而且,图中虽未示出,但镜筒29在中途对放置台22表面有90°折射,在该折射部端部设置有识别摄相机。在该折射部设置有对放置台22表面成45度角的镜子,用该结构能进行识别图形。
这里,引线架34上构成装载部为10行5列的一个集成块37(参照图4),该集成块37形成有多个。操作孔24的大小为对该一个集成块37,例如能从上部识别2行的20个装载部的大小。该操作孔24在识别图形等上被有效使用。且该操作孔24的大小并无特别规定,是根据接合装置21的识别图形方法等,按每次操作目的决定的。
下面说明接合臂26、毛细管27及焊接电极28。如图2所示,识别图形后,移动环状照明25及接合臂26、毛细管27,使毛细管27位于操作孔24上。根据从识别摄像机得到的数据进行引线接合,是毛细管27从操作孔24进入覆罩23内把半导体元件的电极座与所希望的电极图形间进行引线接合。这时,焊接电极28进行针脚形接合,使被切断的金属细线的前端形成焊球38(参照图5)。
下面用图3说明送风装置。图3是如图1及图2所示具有识别装置的接合装置21的简图。
也如图1~图3所示,在环状照明25和覆罩23之间、操作孔24近旁设置有防止闪晃送风机构31。从防止闪晃送风机构31,对覆罩23表面的侧方向、向操作孔24上部吹例如3公升/分的氮气送风33。一方面如上所述,向覆罩23内吹入例如4公升/分的氮气。一方面覆罩23内,通过装在放置台22的加热器30维持例如230℃。然后,注入的氮气,例如是70℃被加热器30的热加热至230℃。
被加热的氮气因覆罩23内的上升气流从操作孔24向外部吹出,这时的室温例如是20℃,由于氮气和室温的温度差,发生大体是由氮气构成闪晃32。其结果是环状照明25下部及环状照明25内弥漫着闪晃32,使识别摄相机的识别精度恶化,引线接合精度下降。
但是,如图3所示,防止闪晃送风机构31设置在环状照明25下端的紧旁边、与环状照明成一体移动。防止闪晃送风机构31能把由操作孔24吹出的氮气构成的闪晃32以例如3公升/分的氮气送风33从操作孔24上及环状照明25周围吹跑。这时,如上所述,由于防止闪晃送风机构31设置在环状照明25下端的紧旁边,所以不会使操作室的空气、特别是氧气混入氮气33内。因此,从防止闪晃送风机构31出来的氮气33即使从操作孔24进入覆罩23内,因为氮气33内不混有氧气,所以不会促进引线架34的氧化。
而且,用防止闪晃送风机构31能把事先弥漫在环状照明25下方、环状照明25内及镜筒29内的闪晃32除去。因此,接合装置21能在引线接合工序中间填充氮气,使引线架34即使长时间放置在放置台上也不氧化。其结果就是由于引线架34表面不氧化,所以识别图形时反射性良好,能提高识别精度。
还有,引线架34表面氧化时,例如由于能对应150℃的防氧化剂膜剥落而与树脂的结合性恶化,对此也能处理,也是使半导体装置的耐湿性、耐剥离性提高的接合装置。
还有,覆罩23内被加热的氮气,因覆罩23内的上升气流,通过操作孔24向外部吹出时,由于和室温的温度差而产生闪晃32,用设置在上述位置的防止闪晃送风机构31能将其除去。因此,闪晃32不能进入环状照明25内,能使识别摄相机良好地进行识别,使其识别图形精度达到μm级,引线接合也能高精度地进行。
最后,参照图4~图6说明是本发明特征的构成覆罩23的板47上操作孔24周边部471的绝缘处理。
如图4(A)所示,覆罩23由箝位器40和不锈钢制的板47所构成。该板47,嵌入箝位器上部的凹部48内,能与箝位器40表面成水平方向、与引线架34的移动方向成垂直方向地自由移动。板47上形成有操作孔24,通过该操作孔24根据引线架34上行方向装载部的移动来进行对块37的识别图形、引线接合。
以下,由于覆罩23是由箝位器40和板47构成的,所以上述符号231与符号471是一致的。
下面,先简单说明接合装置21的作用。
如图4(A)所示,接合装置21中,放置台22上设置有箝位器40,用箝位器40把引线架34的块37周边压住,使引线架34与放置台22表面的热部件44贴紧。通过操作孔24、用镜筒29内的识别摄相机对固定在热部件44上的引线架34作识别图形。识别图形后,图中虽未示出,但将块37内各装载部的发射极电极与导电图形、基极电极与导电图形进行热压接的焊球焊及超声波的楔焊。
这里,如图4(B)所示,箝位器40有与块37大体一样大小的开口部41,与引线架34接触的部分设有凹凸部43。用凹凸部43压住块37的周边使块37的背面紧贴热部件44。且箝位器40的内部设有使氮气流通的通路45和46。
块37内有多个装载部,每个该块37内一并进行引线接合,所以与现有的电路装置制造方法相比,块37的加热时间长,要考虑块37的氧化。为解决此问题,如上所述,在从箝位器40向块37表面吹出氮气的同时,用向由箝位器40和板47形成的操作区内充填氮气来解决此问题。
下面,参照图5说明设于板47上的操作孔24与毛细管27、与焊接电极28的关系。
如图5(A)所示,设于板47上的操作孔24的上部设置有毛细管27及焊接电极28。且如上所述,毛细管27根据从识别摄相机得到的数据从操作孔24进入操作区内,把半导体元件35的电极座与所希望的电极图形作引线接合。这时,在焊接电极28和毛细管27间施加电压进行针脚形接合,在被切断的金属细线36的前端形成焊球38。
板47是不锈钢制,所以如图所示,使毛细管27前端与焊接电极28的距离为a,焊接电极28与形成有操作孔24的板47前端部的距离为b时,满足a>b的关系,使毛细管27前端和焊接电极28间可靠产生瞬间放电,进行在金属细线36的前端形成焊球38的操作。即,由于板47是导电构件构成,若a、b两者的关系是a<b时,则在焊接电极28与形成有操作孔24的板47前端部间产生瞬间放电,不能进行在金属细线36的前端形成焊球38的操作。
但如上所述,本发明接合装置21中,用内置于放置台22的加热器30的功能,在操作区内例如维持230℃。因此,氮气即使以例如70℃吹入,氮气也在操作区内被加热器30加热至230℃,因操作区内的上升气流从操作孔吹出。因此,形成有操作孔24的板47经常置于被加热至230℃的氮气中,因长期使用,板47的操作孔24周边部翘起。其结果就是,上述a、b的关系变为a<b,产生焊接电极28与形成有操作孔24的板47前端部间产生瞬间放电的问题。
还有,如图6所示,板47,例如厚度为50μm,在箝位器40的前后部设置有滚轮39,通过该滚轮39,板47能向与引线板34的移动方向成垂直的方向移动。操作孔24的大小以对一个集成块37例如能从上部识别2行装载部的大小来形成,通过使操作孔24滑动一并进行识别图形、引线接合的操作。因此,由于形成操作孔24的部分也移动到滚轮39近前,所以形成有操作孔24的板47容易翘起。其结果就是,因长期使用,上述a、b两者的关系变为a<b,产生焊接电极28与形成有操作孔24的板47前端部间产生瞬间放电的问题。
如上所述,这种形成有操作孔24的板47翘起问题,是由进行引线接合工序中必须的操作所带来的。而本发明接合装置,其特征在于,在用斜线画剖面线的板47的区域471处做绝缘处理。具体说就是,在用斜线画剖面线的板47的区域471处,贴氟系树脂构成的带、例如特氟纶(登录商标)带,贴热耐的非导电性带。或在用斜线画剖面线的板47的区域471处,作由氟系树脂构成的绝缘层、例如特氟纶(登录商标)涂层和绝热涂层。或在用斜线画剖面线的板47的区域471处,贴合陶瓷板等的绝缘板。这样,上述a、b两者的关系虽变为a<b的关系,但由于板47形成操作孔24的周边部471作了绝缘处理,所以不会误产生瞬间放电。其结果就是,不妨碍防止引线架34的表面氧化、移动操作孔24来提高接合速度等优点,进而也能实现防止误产生瞬间放电的接合装置。
图中表示了把板47上形成的操作孔24围起来的所作绝缘处理的情况,特别是只在距焊接电极28的前端有最近侧边的操作孔24周围作绝缘处理,就能解决因上述a<b关系误产生瞬间放电。
还有,本发明接合装置2 1中,如图5(B)所示,其特征也在于,在板47上形成操作孔24时将操作区域的内面作为冲切面。具体说就是,在板47上形成操作孔24时,使曲面472位于操作区域的内面,在板47上形成操作孔24时,使突出部473位于操作区内面的相反面。箝位器40与板47形成的操作区的高度是5mm左右,板47从板47的表面翘起2mm左右。若板47向操作区内下垂时,虽能防止上述的误瞬间放电,但产生因下垂的板47使操作区狭小的问题。
但是,如本发明结构那样,在板47上形成操作孔24时,将操作区内面作为冲切面,虽有因高温等使板47翘曲的因素,也能使板47向操作区上部翘曲。因此,经常确保箝位器40和板47形成的操作区,能实现没有因板47翘曲使操作区内金属细线弯曲等问题的接合装置。
本实施例中详细说的引线接合,但具有光学识别装置的芯片接合等也能得到同样效果。而且,放置台上放置的不限定于引线架,导电箔等须防止氧化的东西能得到同样效果。进而,对金属基板、印刷基板、陶瓷基板等进行装片、引线接合时,还有,部分涂布焊锡部分的装置中如有光学识别装置的话就能应用。另外,在不脱离本发明要旨的范围内可有种种变更。
本发明接合装置,其特征在于,构成覆盖所述基板放置台上操作区覆罩的导电板上,在所述导电板操作孔周围作绝缘处理。因此,能防止因所述操作孔周围导电板翘曲而产生的所述导电板与焊接电极间的误瞬间放电。其结果就是,对防止所述操作区内引线架表面氧化、用移动所述操作孔来提高接合速度等的优点不会妨碍,进而还能实现防止误瞬间放电的接合装置。
本发明接合装置,其特征在于,在所述导电板上形成所述操作孔时,将所述操作区的内面作为冲切面。因此,所述操作孔周围的导电板向所述操作区上部翘曲。其结果就是,所述操作孔周围的导电板不会侵入所述操作区的区域,能实现没有因所述操作孔周围导电板使所述操作区内金属细线弯曲等问题的接合装置。
Claims (11)
1.一种接合装置,其特征在于,包括:基板放置台;覆罩,在所述基板放置台上覆盖操作区;操作孔,设在所述覆罩上面;毛细管及焊接电极,设在所述操作孔的上面;在所述覆罩上对所述操作孔周边实施绝缘处理,防止所述焊接电极与所述覆罩间产生瞬间放电。
2.如权利要求1所述的接合装置,其特征在于,所述覆罩是由导电板覆盖在箝位器上面而构成的,所述操作孔设于所述导电板上。
3.如权利要求2所述的接合装置,其特征在于,所述导电板由不锈钢构成。
4.如权利要求1或2所述的接合装置,其特征在于,所述绝缘处理是在具有距所述焊接电极前端最近侧边的所述操作孔周边实施。
5.如权利要求1或2所述的接合装置,其特征在于,所述绝缘处理是通过贴耐热绝缘带来实施。
6.如权利要求5所述的接合装置,其特征在于,所述耐热绝缘带是由氟系树脂构成的带。
7.如权利要求1或2所述的接合装置,其特征在于,所述绝缘处理是通过形成由氟系树脂构成的绝缘层来实施。
8.如权利要求1或2所述的接合装置,其特征在于,所述绝缘处理是通过贴合绝缘板来实施。
9.如权利要求8所述的接合装置,其特征在于,所述绝缘板是陶瓷板。
10.如权利要求1所述的接合装置,其特征在于,形成所述操作孔时的冲切面位于所述覆罩的内面。
11.如权利要求2所述的接合装置,其特征在于,形成所述操作孔时的冲切面位于所述导电板的内面。
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EP1326730B1 (de) * | 2000-10-06 | 2009-09-23 | Pac Tech - Packaging Technologies GmbH | Vorrichtung zur positionierung eines werkzeuges gegenüber einem werkstück |
JP4711549B2 (ja) * | 2001-06-27 | 2011-06-29 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP2003007759A (ja) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | 認識装置、ボンディング装置および回路装置の製造方法 |
EP1663025A4 (en) * | 2003-08-20 | 2010-03-24 | Facet Technologies Llc | BLOOD COLLECTION DEVICE |
JP4014579B2 (ja) * | 2004-04-01 | 2007-11-28 | 沖電気工業株式会社 | ワイヤボンディング装置及びワイヤボンディング方法 |
JP4043495B2 (ja) | 2006-04-20 | 2008-02-06 | 株式会社カイジョー | ワーククランプ及びワイヤボンディング装置 |
US7578423B1 (en) * | 2008-06-06 | 2009-08-25 | Asm Technology Singapore Pte Ltd. | Assembly for reducing oxidation of semiconductor devices |
US8227723B2 (en) * | 2009-10-19 | 2012-07-24 | Applied Materials, Inc. | Solder bonding method and apparatus |
US8186562B1 (en) * | 2010-12-14 | 2012-05-29 | Asm Technology Singapore Pte Ltd | Apparatus for increasing coverage of shielding gas during wire bonding |
JP5618974B2 (ja) * | 2011-08-16 | 2014-11-05 | 株式会社新川 | ワイヤボンディング装置 |
KR101612012B1 (ko) * | 2012-01-26 | 2016-04-12 | 가부시키가이샤 신가와 | 산화 방지 가스 취출 유닛 |
JP2014075519A (ja) | 2012-10-05 | 2014-04-24 | Shinkawa Ltd | 酸化防止ガス吹き出しユニット |
TWM468013U (zh) * | 2013-07-18 | 2013-12-11 | Pram Technology Inc | 電子業製程共用式可拆裝替換之打線熱板 |
KR101874852B1 (ko) * | 2014-03-14 | 2018-07-05 | 가부시키가이샤 신가와 | 본딩 장치 및 본딩 방법 |
JP5916814B2 (ja) * | 2014-08-06 | 2016-05-11 | 株式会社カイジョー | ボンディング方法及びボンディング装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60227432A (ja) * | 1984-04-26 | 1985-11-12 | Nec Corp | ボンデイング用ワイヤのボ−ル形成装置 |
JPS62276840A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | ボンデイング装置 |
JPS6329535A (ja) * | 1986-07-22 | 1988-02-08 | Mitsubishi Electric Corp | ワイヤボンダ− |
US4976393A (en) * | 1986-12-26 | 1990-12-11 | Hitachi, Ltd. | Semiconductor device and production process thereof, as well as wire bonding device used therefor |
US5285949A (en) * | 1987-01-26 | 1994-02-15 | Hitachi, Ltd. | Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method |
JPS63266846A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 電子装置の製造方法および装置 |
JPH02112249A (ja) * | 1988-10-21 | 1990-04-24 | Hitachi Ltd | 半導体装置の組立方法およびそれに用いられるワイヤボンディング装置ならびにこれによって得られる半導体装置 |
US5037023A (en) * | 1988-11-28 | 1991-08-06 | Hitachi, Ltd. | Method and apparatus for wire bonding |
JPH06260525A (ja) * | 1993-03-02 | 1994-09-16 | Mitsubishi Electric Corp | ワイヤボンディング装置 |
JP3248778B2 (ja) * | 1993-05-21 | 2002-01-21 | ローム株式会社 | 半田ワイヤーにボール部を形成する方法 |
JP3372313B2 (ja) * | 1993-09-07 | 2003-02-04 | 芝浦メカトロニクス株式会社 | ワイヤボンディング装置 |
JPH0855868A (ja) * | 1994-08-17 | 1996-02-27 | Matsushita Electric Ind Co Ltd | ワイヤボンディング装置 |
JPH08236570A (ja) * | 1995-02-28 | 1996-09-13 | Sony Corp | ワイヤーボンダ |
JP2981973B2 (ja) * | 1995-05-30 | 1999-11-22 | 株式会社新川 | ワイヤボンディング装置 |
US6068174A (en) * | 1996-12-13 | 2000-05-30 | Micro)N Technology, Inc. | Device and method for clamping and wire-bonding the leads of a lead frame one set at a time |
US6234376B1 (en) * | 1999-07-13 | 2001-05-22 | Kulicke & Soffa Investments, Inc. | Supplying a cover gas for wire ball bonding |
JP3381910B2 (ja) * | 2000-09-13 | 2003-03-04 | 日本精機株式会社 | ワイヤボンディング装置 |
-
2001
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- 2002-07-22 US US10/201,064 patent/US6824037B2/en not_active Expired - Fee Related
- 2002-07-25 CN CNB021269696A patent/CN1173391C/zh not_active Expired - Fee Related
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JP2003037131A (ja) | 2003-02-07 |
US20030019906A1 (en) | 2003-01-30 |
TWI278945B (en) | 2007-04-11 |
US6824037B2 (en) | 2004-11-30 |
CN1399321A (zh) | 2003-02-26 |
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