CN115443541A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN115443541A
CN115443541A CN202180030568.6A CN202180030568A CN115443541A CN 115443541 A CN115443541 A CN 115443541A CN 202180030568 A CN202180030568 A CN 202180030568A CN 115443541 A CN115443541 A CN 115443541A
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CN
China
Prior art keywords
concentration
hydrogen
low
peak
region
Prior art date
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Pending
Application number
CN202180030568.6A
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English (en)
Chinese (zh)
Inventor
内田美佐稀
吉村尚
泷下博
谷口竣太郎
野口晴司
樱井洋辅
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN115443541A publication Critical patent/CN115443541A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180030568.6A 2020-11-17 2021-11-15 半导体装置 Pending CN115443541A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-190971 2020-11-17
JP2020190971 2020-11-17
PCT/JP2021/041952 WO2022107727A1 (ja) 2020-11-17 2021-11-15 半導体装置

Publications (1)

Publication Number Publication Date
CN115443541A true CN115443541A (zh) 2022-12-06

Family

ID=81708900

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180030568.6A Pending CN115443541A (zh) 2020-11-17 2021-11-15 半导体装置

Country Status (5)

Country Link
US (1) US12543355B2 (https=)
JP (2) JP7424512B2 (https=)
CN (1) CN115443541A (https=)
DE (1) DE112021001364B4 (https=)
WO (1) WO2022107727A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7410900B2 (ja) * 2021-03-17 2024-01-10 株式会社東芝 半導体装置
JP7796611B2 (ja) * 2022-08-23 2026-01-09 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
DE112023002207T5 (de) * 2022-12-13 2025-03-13 Fuji Electric Co., Ltd. Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101305470A (zh) * 2005-11-14 2008-11-12 富士电机电子技术株式会社 半导体器件及其制造方法
JP2018195757A (ja) * 2017-05-19 2018-12-06 学校法人東北学院 半導体装置
WO2020080295A1 (ja) * 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
WO2020100997A1 (ja) * 2018-11-16 2020-05-22 富士電機株式会社 半導体装置および製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011113549B4 (de) 2011-09-15 2019-10-17 Infineon Technologies Ag Ein Halbleiterbauelement mit einer Feldstoppzone in einem Halbleiterkörper und ein Verfahren zur Herstellung einer Feldstoppzone in einem Halbleiterkörper
EP2793266B1 (en) 2011-12-15 2020-11-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
EP2913854B1 (en) * 2012-10-23 2020-05-27 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing same
CN104969360B (zh) 2013-03-25 2018-04-20 富士电机株式会社 半导体装置
US10211325B2 (en) 2014-01-28 2019-02-19 Infineon Technologies Ag Semiconductor device including undulated profile of net doping in a drift zone
US9312135B2 (en) 2014-03-19 2016-04-12 Infineon Technologies Ag Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects
DE102014116666B4 (de) * 2014-11-14 2022-04-21 Infineon Technologies Ag Ein Verfahren zum Bilden eines Halbleiterbauelements
DE102015107085B4 (de) 2015-05-06 2025-04-10 Infineon Technologies Ag Verfahren zum Herstellen von Halbleitervorrichtungen und sauerstoffkorrelierte thermische Donatoren enthaltende Halbleitervorrichtung
CN112490281B (zh) 2015-06-17 2025-02-25 富士电机株式会社 半导体装置
WO2016204227A1 (ja) 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102015109661A1 (de) 2015-06-17 2016-12-22 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement
DE112016001611B4 (de) 2015-09-16 2022-06-30 Fuji Electric Co., Ltd. Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP6937864B2 (ja) * 2016-12-27 2021-09-22 三菱電機株式会社 半導体装置の製造方法
WO2019181852A1 (ja) * 2018-03-19 2019-09-26 富士電機株式会社 半導体装置および半導体装置の製造方法
CN112219263B (zh) * 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法
DE102018132236B4 (de) 2018-12-14 2023-04-27 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
CN118676194A (zh) 2018-12-28 2024-09-20 富士电机株式会社 半导体装置
JP7243744B2 (ja) * 2019-01-18 2023-03-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6981582B2 (ja) * 2019-12-17 2021-12-15 富士電機株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101305470A (zh) * 2005-11-14 2008-11-12 富士电机电子技术株式会社 半导体器件及其制造方法
JP2018195757A (ja) * 2017-05-19 2018-12-06 学校法人東北学院 半導体装置
WO2020080295A1 (ja) * 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
CN111886682A (zh) * 2018-10-18 2020-11-03 富士电机株式会社 半导体装置及制造方法
WO2020100997A1 (ja) * 2018-11-16 2020-05-22 富士電機株式会社 半導体装置および製造方法

Also Published As

Publication number Publication date
US20230039920A1 (en) 2023-02-09
JP7424512B2 (ja) 2024-01-30
US12543355B2 (en) 2026-02-03
JP7722483B2 (ja) 2025-08-13
JP2024038425A (ja) 2024-03-19
JPWO2022107727A1 (https=) 2022-05-27
DE112021001364T5 (de) 2022-12-29
DE112021001364B4 (de) 2025-11-20
WO2022107727A1 (ja) 2022-05-27

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