JP7424512B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7424512B2 JP7424512B2 JP2022563745A JP2022563745A JP7424512B2 JP 7424512 B2 JP7424512 B2 JP 7424512B2 JP 2022563745 A JP2022563745 A JP 2022563745A JP 2022563745 A JP2022563745 A JP 2022563745A JP 7424512 B2 JP7424512 B2 JP 7424512B2
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- hydrogen
- region
- peak
- low concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 185
- 229910052739 hydrogen Inorganic materials 0.000 claims description 306
- 239000001257 hydrogen Substances 0.000 claims description 306
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 286
- 239000000758 substrate Substances 0.000 claims description 135
- 239000000126 substance Substances 0.000 claims description 118
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 238000009826 distribution Methods 0.000 claims description 41
- 150000002500 ions Chemical class 0.000 claims description 31
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 28
- 230000007423 decrease Effects 0.000 claims description 3
- 239000000386 donor Substances 0.000 description 52
- 125000004429 atom Chemical group 0.000 description 32
- 239000000370 acceptor Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 23
- 230000007547 defect Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 20
- -1 hydrogen ions Chemical class 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000852 hydrogen donor Substances 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
(特許文献1)米国特許出願公開第2016/0141399号明細書
NVOH=NV+ξCOX ・・・ (式1)
酸素寄与率ξは、1×10-5以上、1×10-3以下であってよい。空孔濃度NVは、1×1012(/cm3)以上1×1014(/cm3)以下であってよい。酸素寄与率ξは、下面23から最も離れた低濃度水素ピーク125-1のドーズ量DH(ions/cm2)に対して、以下の式2で表されてよい。
ξ=aDH b ・・・ (式2)
ここで、aは1×10-11以上、1×10-10以下であってよい。bは、4×10-1以上、6×10-1以下であってよい。
NVOH=NV+ξCOX+ηCC ・・・ (式2)
酸素寄与率ξおよび空孔濃度NVは、上記の値の範囲であってよい。炭素寄与率ηは、0.01%~10%(すなわち0.0001以上、0.1以下)の値であってよい。
Claims (19)
- 上面および下面を有し、バルク・ドナーおよび酸素を含む半導体基板と、
少なくとも一部分が前記半導体基板の前記下面側に設けられ、ドーピング濃度がバルク・ドナー濃度よりも高いバッファ領域と、
前記バッファ領域に配置された第1低濃度水素ピークと、
前記バッファ領域において前記第1低濃度水素ピークよりも前記下面に近い位置に配置された第2低濃度水素ピークと、
前記バッファ領域において前記第2低濃度水素ピークよりも前記下面に近い位置に配置され、前記第2低濃度水素ピークよりも水素化学濃度が高い高濃度水素ピークと、
前記第1低濃度水素ピークおよび前記第2低濃度水素ピークの間の領域と、前記第2低濃度水素ピークが設けられた領域を含み、ドーピング濃度がバルク・ドナー濃度よりも高く、且つ、前記ドーピング濃度の変動が±30%以下であり、前記ドーピング濃度の変動比率が水素化学濃度の変動比率よりも小さく、水素化学濃度分布の水素濃度ピークに対応するドーピング濃度分布の濃度ピークの幅が、前記水素化学濃度分布の前記水素濃度ピークの幅よりも大きい平坦領域と
を備える半導体装置。 - 前記平坦領域の深さ方向におけるドーピング濃度分布は、前記第2低濃度水素ピークに対応する前記濃度ピークを有し、
前記濃度ピークは、前記第2低濃度水素ピークよりも緩やかに濃度が変化する
請求項1に記載の半導体装置。 - 前記濃度ピークは、前記第2低濃度水素ピークよりも前記半導体基板の前記下面側に配置されている
請求項2に記載の半導体装置。 - 深さ方向において、前記平坦領域の長さは、前記バッファ領域の長さの半分以上である
請求項1から3のいずれか一項に記載の半導体装置。 - 前記平坦領域の前記ドーピング濃度の平均値が、前記半導体基板の酸素化学濃度の0.01%以上、3%以下である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記半導体基板の酸素化学濃度は、前記第1低濃度水素ピークの水素化学濃度の10倍以上である
請求項1から5のいずれか一項に記載の半導体装置。 - 前記第1低濃度水素ピークと、前記第2低濃度水素ピークとの間隔(μm)は、前記半導体基板の酸素化学濃度(atoms/cm3)の3/1016(μm/(atoms/cm3))倍以下である
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第1低濃度水素ピークの水素化学濃度が1.0×1016atoms/cm3以下であり、
前記第1低濃度水素ピークと、前記第2低濃度水素ピークとの間隔が100μm以下である
請求項1から7のいずれか一項に記載の半導体装置。 - 前記バッファ領域は、前記バッファ領域の中央よりも前記下面側の下面側領域と、前記バッファ領域の中央よりも前記上面側の上面側領域とを有し、
前記バッファ領域は、前記第1低濃度水素ピークおよび前記第2低濃度水素ピークを含む複数の低濃度水素ピークを有し、
前記上面側領域に配置された前記低濃度水素ピークの個数は、前記下面側領域に配置された前記低濃度水素ピークの個数よりも多い
請求項1から8のいずれか一項に記載の半導体装置。 - 前記低濃度水素ピークの水素化学濃度は、1×1016/cm3以下である
請求項9に記載の半導体装置。 - 前記平坦領域のドーピング濃度が、前記バルク・ドナー濃度の2倍以上である
請求項1から10のいずれか一項に記載の半導体装置。 - 前記平坦領域のドーピング濃度が、0.7×1013/cm3以上である
請求項1から11のいずれか一項に記載の半導体装置。 - 前記第1低濃度水素ピークおよび前記第2低濃度水素ピークのそれぞれは、ピークの頂点から前記半導体基板の前記下面に向かう下側裾と、前記頂点から前記半導体基板の前記上面に向かう上側裾とを有し、
前記上側裾は、前記下側裾よりも急峻に水素化学濃度が低下する
請求項1から12のいずれか一項に記載の半導体装置。 - 前記半導体基板の酸素化学濃度が1.0×1017atoms/cm3以上である
請求項1から13のいずれか一項に記載の半導体装置。 - 前記第1低濃度水素ピークの水素イオンドーズ量が1.0×1012ions/cm2以下である
請求項1から14のいずれか一項に記載の半導体装置。 - 前記第2低濃度水素ピークの水素イオンドーズ量が1.0×1012ions/cm2以下である
請求項1から15のいずれか一項に記載の半導体装置。 - 前記平坦領域のドーピング濃度の平均値が前記第2低濃度水素ピークと前記高濃度水素ピークの間のドーピング濃度の極小値以下である
請求項1から16のいずれか一項に記載の半導体装置。 - 前記バッファ領域において、前記高濃度水素ピークよりも前記上面側であって、前記第2低濃度水素ピークよりも前記下面に近い位置に配置された第3低濃度水素ピークを有し、
前記平坦領域が前記第3低濃度水素ピークを含み、
前記平坦領域の前記ドーピング濃度の平均値が前記第3低濃度水素ピークと前記高濃度水素ピークの間のドーピング濃度の極小値以下である
請求項1から17のいずれか一項に記載の半導体装置。 - 前記平坦領域において、前記ドーピング濃度の変動比率は前記水素化学濃度の変動比率の半分以下である
請求項1から18のいずれか一項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024005569A JP2024038425A (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020190971 | 2020-11-17 | ||
JP2020190971 | 2020-11-17 | ||
PCT/JP2021/041952 WO2022107727A1 (ja) | 2020-11-17 | 2021-11-15 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024005569A Division JP2024038425A (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2022107727A1 JPWO2022107727A1 (ja) | 2022-05-27 |
JPWO2022107727A5 JPWO2022107727A5 (ja) | 2023-01-25 |
JP7424512B2 true JP7424512B2 (ja) | 2024-01-30 |
Family
ID=81708900
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022563745A Active JP7424512B2 (ja) | 2020-11-17 | 2021-11-15 | 半導体装置 |
JP2024005569A Pending JP2024038425A (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024005569A Pending JP2024038425A (ja) | 2020-11-17 | 2024-01-17 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230039920A1 (ja) |
JP (2) | JP7424512B2 (ja) |
CN (1) | CN115443541A (ja) |
DE (1) | DE112021001364T5 (ja) |
WO (1) | WO2022107727A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7410900B2 (ja) * | 2021-03-17 | 2024-01-10 | 株式会社東芝 | 半導体装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016096338A (ja) | 2014-11-14 | 2016-05-26 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体装置を形成する方法および半導体装置 |
JP2018195757A (ja) | 2017-05-19 | 2018-12-06 | 学校法人東北学院 | 半導体装置 |
WO2019181852A1 (ja) | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2020100997A1 (ja) | 2018-11-16 | 2020-05-22 | 富士電機株式会社 | 半導体装置および製造方法 |
WO2020138218A1 (ja) | 2018-12-28 | 2020-07-02 | 富士電機株式会社 | 半導体装置および製造方法 |
JP2020107917A (ja) | 2016-12-27 | 2020-07-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
WO2020149354A1 (ja) | 2019-01-18 | 2020-07-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
-
2021
- 2021-11-15 DE DE112021001364.5T patent/DE112021001364T5/de active Pending
- 2021-11-15 CN CN202180030568.6A patent/CN115443541A/zh active Pending
- 2021-11-15 WO PCT/JP2021/041952 patent/WO2022107727A1/ja active Application Filing
- 2021-11-15 JP JP2022563745A patent/JP7424512B2/ja active Active
-
2022
- 2022-10-20 US US17/970,496 patent/US20230039920A1/en active Pending
-
2024
- 2024-01-17 JP JP2024005569A patent/JP2024038425A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016096338A (ja) | 2014-11-14 | 2016-05-26 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体装置を形成する方法および半導体装置 |
JP2020107917A (ja) | 2016-12-27 | 2020-07-09 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2018195757A (ja) | 2017-05-19 | 2018-12-06 | 学校法人東北学院 | 半導体装置 |
WO2019181852A1 (ja) | 2018-03-19 | 2019-09-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2020100997A1 (ja) | 2018-11-16 | 2020-05-22 | 富士電機株式会社 | 半導体装置および製造方法 |
WO2020138218A1 (ja) | 2018-12-28 | 2020-07-02 | 富士電機株式会社 | 半導体装置および製造方法 |
WO2020149354A1 (ja) | 2019-01-18 | 2020-07-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
DE112021001364T5 (de) | 2022-12-29 |
JP2024038425A (ja) | 2024-03-19 |
US20230039920A1 (en) | 2023-02-09 |
JPWO2022107727A1 (ja) | 2022-05-27 |
WO2022107727A1 (ja) | 2022-05-27 |
CN115443541A (zh) | 2022-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7268743B2 (ja) | 半導体装置 | |
JP7272454B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2024038425A (ja) | 半導体装置 | |
JP2024024105A (ja) | 半導体装置 | |
JP2023179647A (ja) | 半導体装置および半導体装置の製造方法 | |
WO2022196768A1 (ja) | 半導体装置 | |
CN114303246A (zh) | 半导体装置、半导体装置的制造方法及具备半导体装置的电力变换装置 | |
JP7400834B2 (ja) | 半導体装置および半導体装置の製造方法 | |
WO2022102711A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7452632B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7439929B2 (ja) | 半導体装置 | |
WO2023063412A1 (ja) | 半導体装置および半導体装置の製造方法 | |
US20240154003A1 (en) | Semiconductor device | |
WO2023224059A1 (ja) | 半導体装置 | |
JP7231066B2 (ja) | 半導体装置および半導体装置の製造方法 | |
WO2023063411A1 (ja) | 半導体装置 | |
US20240055483A1 (en) | Semiconductor device | |
WO2023145805A1 (ja) | 半導体装置および製造方法 | |
WO2023210727A1 (ja) | 半導体装置 | |
JP2022161357A (ja) | 半導体装置および製造方法 | |
JP2024035557A (ja) | 半導体装置 | |
JP2024014333A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2023170200A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221031 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221031 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240101 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7424512 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |