CN114846622A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114846622A
CN114846622A CN202180007468.1A CN202180007468A CN114846622A CN 114846622 A CN114846622 A CN 114846622A CN 202180007468 A CN202180007468 A CN 202180007468A CN 114846622 A CN114846622 A CN 114846622A
Authority
CN
China
Prior art keywords
region
semiconductor device
trench
contact
trench portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180007468.1A
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English (en)
Chinese (zh)
Inventor
三塚要
唐本祐树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of CN114846622A publication Critical patent/CN114846622A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202180007468.1A 2020-07-03 2021-04-01 半导体装置 Pending CN114846622A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020115759 2020-07-03
JP2020-115759 2020-07-03
PCT/JP2021/014138 WO2022004084A1 (ja) 2020-07-03 2021-04-01 半導体装置

Publications (1)

Publication Number Publication Date
CN114846622A true CN114846622A (zh) 2022-08-02

Family

ID=79315725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180007468.1A Pending CN114846622A (zh) 2020-07-03 2021-04-01 半导体装置

Country Status (5)

Country Link
US (1) US20220328669A1 (enExample)
JP (3) JP7327672B2 (enExample)
CN (1) CN114846622A (enExample)
DE (1) DE112021000202T5 (enExample)
WO (1) WO2022004084A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117497574A (zh) * 2023-08-31 2024-02-02 海信家电集团股份有限公司 半导体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11276686B2 (en) * 2019-05-15 2022-03-15 Fuji Electric Co., Ltd. Semiconductor device
EP3953972A1 (en) * 2020-06-18 2022-02-16 Dynex Semiconductor Limited Reverse conducting igbt with controlled anode injection
JP7456520B2 (ja) * 2020-12-07 2024-03-27 富士電機株式会社 半導体装置
JP2023113080A (ja) * 2022-02-02 2023-08-15 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2024241741A1 (ja) * 2023-05-23 2024-11-28 富士電機株式会社 半導体装置および半導体装置の製造方法
WO2025170006A1 (ja) * 2024-02-09 2025-08-14 富士電機株式会社 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0619610A1 (fr) * 1993-04-07 1994-10-12 Philips Composants Et Semiconducteurs Dispositif semiconducteur comprenant un transistor latéral
CN105706238A (zh) * 2013-11-05 2016-06-22 丰田自动车株式会社 半导体装置
JP2017168829A (ja) * 2016-03-11 2017-09-21 富士電機株式会社 半導体装置
JP2019004060A (ja) * 2017-06-15 2019-01-10 富士電機株式会社 半導体装置および半導体装置の製造方法
US20190019861A1 (en) * 2017-07-14 2019-01-17 Fuji Electric Co., Ltd. Semiconductor device
US20190051739A1 (en) * 2017-08-09 2019-02-14 Fuji Electric Co., Ltd. Semiconductor device
US20190088769A1 (en) * 2017-09-20 2019-03-21 Kabushiki Kaisha Toshiba Semiconductor device

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Publication number Priority date Publication date Assignee Title
JP2009283540A (ja) * 2008-05-20 2009-12-03 Denso Corp 炭化珪素半導体装置およびその製造方法
US20100308400A1 (en) * 2008-06-20 2010-12-09 Maxpower Semiconductor Inc. Semiconductor Power Switches Having Trench Gates
US8390060B2 (en) * 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
JP2012178389A (ja) * 2011-02-25 2012-09-13 Renesas Electronics Corp 半導体装置
JP6190206B2 (ja) * 2012-08-21 2017-08-30 ローム株式会社 半導体装置
CN106663692B (zh) * 2015-02-03 2020-03-06 富士电机株式会社 半导体装置及其制造方法
JP6817777B2 (ja) * 2015-12-16 2021-01-20 ローム株式会社 半導体装置
JP6604430B2 (ja) * 2016-03-10 2019-11-13 富士電機株式会社 半導体装置
JP6741070B2 (ja) 2016-09-14 2020-08-19 富士電機株式会社 半導体装置およびその製造方法
JP7325931B2 (ja) * 2017-05-16 2023-08-15 富士電機株式会社 半導体装置
JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0619610A1 (fr) * 1993-04-07 1994-10-12 Philips Composants Et Semiconducteurs Dispositif semiconducteur comprenant un transistor latéral
CN105706238A (zh) * 2013-11-05 2016-06-22 丰田自动车株式会社 半导体装置
JP2017168829A (ja) * 2016-03-11 2017-09-21 富士電機株式会社 半導体装置
JP2019004060A (ja) * 2017-06-15 2019-01-10 富士電機株式会社 半導体装置および半導体装置の製造方法
US20190019861A1 (en) * 2017-07-14 2019-01-17 Fuji Electric Co., Ltd. Semiconductor device
US20190051739A1 (en) * 2017-08-09 2019-02-14 Fuji Electric Co., Ltd. Semiconductor device
US20190088769A1 (en) * 2017-09-20 2019-03-21 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117497574A (zh) * 2023-08-31 2024-02-02 海信家电集团股份有限公司 半导体装置
CN117497574B (zh) * 2023-08-31 2024-05-14 海信家电集团股份有限公司 半导体装置

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Publication number Publication date
US20220328669A1 (en) 2022-10-13
JP7327672B2 (ja) 2023-08-16
WO2022004084A1 (ja) 2022-01-06
JPWO2022004084A1 (enExample) 2022-01-06
JP7726248B2 (ja) 2025-08-20
DE112021000202T5 (de) 2022-08-18
JP2025160397A (ja) 2025-10-22
JP2023139265A (ja) 2023-10-03

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