CN1146027C - 光学系统及其装置和使用该光学系统制造半导体装置的方法 - Google Patents

光学系统及其装置和使用该光学系统制造半导体装置的方法 Download PDF

Info

Publication number
CN1146027C
CN1146027C CNB001187449A CN00118744A CN1146027C CN 1146027 C CN1146027 C CN 1146027C CN B001187449 A CNB001187449 A CN B001187449A CN 00118744 A CN00118744 A CN 00118744A CN 1146027 C CN1146027 C CN 1146027C
Authority
CN
China
Prior art keywords
laser
building mortion
laser beam
optical system
intensity distributions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB001187449A
Other languages
English (en)
Chinese (zh)
Other versions
CN1287381A (zh
Inventor
_
岡本達樹
Ҳ
小川哲也
古田啓介
时岡秀忠
笹川智宏
����һ
西前顺一
井上満夫
佐藤行雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1287381A publication Critical patent/CN1287381A/zh
Application granted granted Critical
Publication of CN1146027C publication Critical patent/CN1146027C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
CNB001187449A 1999-06-25 2000-06-23 光学系统及其装置和使用该光学系统制造半导体装置的方法 Expired - Lifetime CN1146027C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP179233/1999 1999-06-25
JP17923399A JP3562389B2 (ja) 1999-06-25 1999-06-25 レーザ熱処理装置

Publications (2)

Publication Number Publication Date
CN1287381A CN1287381A (zh) 2001-03-14
CN1146027C true CN1146027C (zh) 2004-04-14

Family

ID=16062280

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB001187449A Expired - Lifetime CN1146027C (zh) 1999-06-25 2000-06-23 光学系统及其装置和使用该光学系统制造半导体装置的方法

Country Status (8)

Country Link
US (1) US6437284B1 (https=)
EP (1) EP1063049B1 (https=)
JP (1) JP3562389B2 (https=)
KR (1) KR100371986B1 (https=)
CN (1) CN1146027C (https=)
CA (1) CA2312223A1 (https=)
DE (1) DE60027820T2 (https=)
TW (1) TW469539B (https=)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
DE19931751A1 (de) * 1999-07-08 2001-01-11 Zeiss Carl Fa Vorrichtung zur Reduzierung der Peakleistung einer Pulslaser-Lichtquelle
US6635588B1 (en) * 2000-06-12 2003-10-21 Ultratech Stepper, Inc. Method for laser thermal processing using thermally induced reflectivity switch
JP4216068B2 (ja) 2000-10-06 2009-01-28 三菱電機株式会社 多結晶シリコン膜の製造方法および製造装置ならびに半導体装置の製造方法
JP2002141301A (ja) 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
US6731421B2 (en) 2001-04-23 2004-05-04 Dee E. Willden Wedge-shaped lensless laser focusing device
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
KR100885904B1 (ko) * 2001-08-10 2009-02-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 어닐링장치 및 반도체장치의 제작방법
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
JP3980465B2 (ja) * 2001-11-09 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US6979605B2 (en) * 2001-11-30 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
US7113527B2 (en) 2001-12-21 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for laser irradiation and manufacturing method of semiconductor device
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
US7718517B2 (en) 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
JP4278940B2 (ja) 2002-09-09 2009-06-17 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2004134785A (ja) * 2002-09-19 2004-04-30 Semiconductor Energy Lab Co Ltd ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法
EP1400832B1 (en) * 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7097709B2 (en) * 2002-11-27 2006-08-29 Mitsubishi Denki Kabushiki Kaisha Laser annealing apparatus
TWI300950B (en) * 2002-11-29 2008-09-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same
JP2004260144A (ja) * 2003-02-06 2004-09-16 Mitsubishi Electric Corp レーザアニーリング方法および装置
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
JP4494045B2 (ja) * 2003-03-11 2010-06-30 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
JP4619035B2 (ja) * 2003-04-24 2011-01-26 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
SG137674A1 (en) * 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
JP2005129916A (ja) * 2003-09-30 2005-05-19 Semiconductor Energy Lab Co Ltd ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP3960295B2 (ja) * 2003-10-31 2007-08-15 住友電気工業株式会社 チルト誤差低減非球面ホモジナイザー
US8084866B2 (en) 2003-12-10 2011-12-27 Micron Technology, Inc. Microelectronic devices and methods for filling vias in microelectronic devices
US7091124B2 (en) 2003-11-13 2006-08-15 Micron Technology, Inc. Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices
JP4416481B2 (ja) * 2003-11-18 2010-02-17 ギガフォトン株式会社 光学的パルス伸長器および露光用放電励起ガスレーザ装置
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
TWI272149B (en) 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
KR100514996B1 (ko) * 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
US20050237895A1 (en) 2004-04-23 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US20050247894A1 (en) 2004-05-05 2005-11-10 Watkins Charles M Systems and methods for forming apertures in microfeature workpieces
US7232754B2 (en) 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
SG120200A1 (en) 2004-08-27 2006-03-28 Micron Technology Inc Slanted vias for electrical circuits on circuit boards and other substrates
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8093530B2 (en) * 2004-11-19 2012-01-10 Canon Kabushiki Kaisha Laser cutting apparatus and laser cutting method
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP2006295068A (ja) * 2005-04-14 2006-10-26 Sony Corp 照射装置
EP1722449B1 (de) * 2005-05-12 2008-10-22 Innovavent GmbH Verwendung eines Scheibenlasers zur Kristallisation von Siliziumschichten
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
KR101250629B1 (ko) * 2005-08-16 2013-04-03 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 고주파 레이저를 사용하는 박막의 균일한 순차적 측면 고상화를 위한 시스템 및 방법
US7622377B2 (en) * 2005-09-01 2009-11-24 Micron Technology, Inc. Microfeature workpiece substrates having through-substrate vias, and associated methods of formation
US7863187B2 (en) 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
CN101617069B (zh) 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
US7749899B2 (en) 2006-06-01 2010-07-06 Micron Technology, Inc. Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces
US8803027B2 (en) * 2006-06-05 2014-08-12 Cymer, Llc Device and method to create a low divergence, high power laser beam for material processing applications
US7629249B2 (en) 2006-08-28 2009-12-08 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US7902643B2 (en) 2006-08-31 2011-03-08 Micron Technology, Inc. Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
JP2008068270A (ja) * 2006-09-12 2008-03-27 Disco Abrasive Syst Ltd レーザー加工装置
KR100878159B1 (ko) * 2007-04-19 2009-01-13 주식회사 코윈디에스티 레이저 가공장치
US7573930B2 (en) 2007-06-14 2009-08-11 Innovavent Gmbh Anamorphotic solid-sate laser
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
SG150410A1 (en) 2007-08-31 2009-03-30 Micron Technology Inc Partitioned through-layer via and associated systems and methods
US8614471B2 (en) 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
DE102007052782B4 (de) * 2007-11-02 2017-02-16 Saint-Gobain Glass France S.A. Verfahren zur Veränderung der Eigenschaften einer TCO-Schicht
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US7884015B2 (en) 2007-12-06 2011-02-08 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US8569155B2 (en) 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR100908325B1 (ko) * 2008-07-11 2009-07-17 주식회사 코윈디에스티 레이저 가공방법
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
KR20170082649A (ko) * 2009-03-20 2017-07-14 코닝 인코포레이티드 정밀 레이저 스코어링
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
KR102108939B1 (ko) * 2012-04-18 2020-05-12 어플라이드 머티어리얼스, 인코포레이티드 발전된 어닐링 프로세스에서 입자를 감소시키기 위한 장치 및 방법
FR3063395B1 (fr) * 2017-02-28 2021-05-28 Centre Nat Rech Scient Source laser pour l'emission d'un groupe d'impulsions
CN109520898A (zh) * 2019-01-22 2019-03-26 河北工业大学 一种柱透镜变换的激光粒度测试方法
US11560987B2 (en) * 2019-11-20 2023-01-24 Nichia Corporation Light source device
CN112916873B (zh) * 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
CN116635978A (zh) * 2021-10-30 2023-08-22 长江存储科技有限责任公司 用于半导体器件中的半导体层的热处理的方法
WO2025220773A1 (ko) * 2024-04-19 2025-10-23 주식회사 이오테크닉스 레이저 장치 및 이를 포함하는 가공 장치
KR102948666B1 (ko) * 2024-04-22 2026-04-03 김윤호 레이저 광학 장치
KR102946121B1 (ko) * 2024-04-22 2026-03-31 신호텍 주식회사 레이저 빔 성형 장치
KR102932994B1 (ko) * 2024-04-22 2026-03-04 신호텍 주식회사 레이저 광학 시스템
CN118768736A (zh) * 2024-07-12 2024-10-15 中南大学 一种基于线状超快激光焊接透明材料的新方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583478B2 (ja) * 1978-03-03 1983-01-21 株式会社日立製作所 レ−ザ加熱方法および装置
US4327972A (en) * 1979-10-22 1982-05-04 Coulter Electronics, Inc. Redirecting surface for desired intensity profile
JPS58127318A (ja) * 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> 絶縁層上への単結晶膜形成方法
JPS6161657A (ja) 1984-09-03 1986-03-29 Matsushita Electric Ind Co Ltd イオン風式空気清浄機
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US4793694A (en) * 1986-04-23 1988-12-27 Quantronix Corporation Method and apparatus for laser beam homogenization
JPS63314862A (ja) * 1987-06-17 1988-12-22 Nec Corp 薄膜トランジスタの製造方法
DE3829728A1 (de) * 1987-09-02 1989-03-23 Lambda Physik Forschung Verfahren und vorrichtung zum homogenisieren der intensitaetsverteilung im querschnit eines laserstrahls
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
JPH02175090A (ja) * 1988-12-27 1990-07-06 Isamu Miyamoto レーザビーム成形装置
JPH0433791A (ja) * 1990-05-29 1992-02-05 Matsushita Electric Ind Co Ltd レーザ加工装置
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
WO1995026517A1 (en) * 1992-11-10 1995-10-05 United States Department Of Energy Laser beam pulse formatting method
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP3402124B2 (ja) 1997-06-04 2003-04-28 住友重機械工業株式会社 ビームホモジナイザ及び半導体薄膜作製方法
JP3484481B2 (ja) 1997-06-19 2004-01-06 住友重機械工業株式会社 ビームホモジナイザ及びそれを用いた半導体薄膜の製造方法

Also Published As

Publication number Publication date
KR20010021028A (ko) 2001-03-15
DE60027820T2 (de) 2007-04-26
EP1063049A3 (en) 2003-03-26
JP3562389B2 (ja) 2004-09-08
US6437284B1 (en) 2002-08-20
JP2001007045A (ja) 2001-01-12
CN1287381A (zh) 2001-03-14
DE60027820D1 (de) 2006-06-14
TW469539B (en) 2001-12-21
CA2312223A1 (en) 2000-12-25
EP1063049B1 (en) 2006-05-10
KR100371986B1 (ko) 2003-02-14
EP1063049A2 (en) 2000-12-27

Similar Documents

Publication Publication Date Title
CN1146027C (zh) 光学系统及其装置和使用该光学系统制造半导体装置的方法
CN1179401C (zh) 激光热处理方法,激光热处理装置以及半导体装置
US6717105B1 (en) Laser annealing optical system and laser annealing apparatus using the same
JP3033120B2 (ja) 半導体薄膜の製造方法
CN1624868A (zh) 激光照射装置、激光照射方法以及半导体器件的制作方法
CN1540390A (zh) 光束均匀器、激光照射装置及半导体装置制造方法
CN1408122A (zh) 多晶态硅膜的制造方法和制造装置、以及半导体装置及其制造方法
CN1443364A (zh) 用于提供单扫描、连续移动连续横向凝固的方法和系统
CN1641836A (zh) 提供连续运动顺序横向固化的方法和系统
CN1531023A (zh) 激光器照射装置、激光器照射方法以及半导体装置的制造方法
CN1849699A (zh) 半导体基板的切断方法
CN1492255A (zh) 光束均化器和激光辐照装置以及半导体器件制造方法
CN102232239A (zh) 用于薄膜结晶的系统和方法
CN106041327A (zh) 激光加工装置
CN101288155A (zh) 高生产率的薄膜结晶过程
CN1706028A (zh) 薄膜半导体的制造方法及制造装置
JP2002141302A (ja) レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
US7097709B2 (en) Laser annealing apparatus
JP2002139697A (ja) 複数レーザビームを用いたレーザ光学系とレーザアニーリング装置
CN1708831A (zh) 结晶膜以及利用激光制造结晶膜的方法
JP4410926B2 (ja) レーザアニーリング方法
CN1706029A (zh) 薄膜半导体的制造方法
JP5201614B2 (ja) レーザ光の照射方法及びその装置
TW200417437A (en) Laser processing method
JP3201395B2 (ja) 半導体薄膜の製造方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20040414

CX01 Expiry of patent term