CN113981414B - 用于3d共形处理的原子层处理腔室 - Google Patents

用于3d共形处理的原子层处理腔室 Download PDF

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Publication number
CN113981414B
CN113981414B CN202111142728.4A CN202111142728A CN113981414B CN 113981414 B CN113981414 B CN 113981414B CN 202111142728 A CN202111142728 A CN 202111142728A CN 113981414 B CN113981414 B CN 113981414B
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substrate
processing
temperature
processing chamber
substance
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Chinese (zh)
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CN113981414A (zh
Inventor
刘炜
阿布拉什·J·马约尔
菲利普·斯托特
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Applied Materials Inc
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Applied Materials Inc
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    • H10P50/242—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H10P14/6339—
    • H10P14/6518—
    • H10P14/6526—
    • H10P14/6532—
    • H10P14/6905—
    • H10P32/20—
    • H10P72/0434—
    • H10P72/0436—
    • H10P72/0602—
    • H10P72/7621—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
CN202111142728.4A 2015-03-20 2016-02-25 用于3d共形处理的原子层处理腔室 Active CN113981414B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111142728.4A CN113981414B (zh) 2015-03-20 2016-02-25 用于3d共形处理的原子层处理腔室

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562135836P 2015-03-20 2015-03-20
US62/135,836 2015-03-20
CN201680016568.XA CN107431033B (zh) 2015-03-20 2016-02-25 用于3d共形处理的原子层处理腔室
PCT/US2016/019619 WO2016153716A1 (en) 2015-03-20 2016-02-25 An atomic layer process chamber for 3d conformal processing
CN202111142728.4A CN113981414B (zh) 2015-03-20 2016-02-25 用于3d共形处理的原子层处理腔室

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CN113981414A CN113981414A (zh) 2022-01-28
CN113981414B true CN113981414B (zh) 2024-11-08

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CN201680016568.XA Active CN107431033B (zh) 2015-03-20 2016-02-25 用于3d共形处理的原子层处理腔室

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Country Status (6)

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US (1) US20160276162A1 (enExample)
JP (1) JP6807860B2 (enExample)
KR (1) KR102494614B1 (enExample)
CN (2) CN113981414B (enExample)
TW (1) TWI691001B (enExample)
WO (1) WO2016153716A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573532B2 (en) 2018-06-15 2020-02-25 Mattson Technology, Inc. Method for processing a workpiece using a multi-cycle thermal treatment process
JP7065728B2 (ja) * 2018-08-17 2022-05-12 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7018849B2 (ja) * 2018-08-17 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜装置

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JPH01289121A (ja) * 1988-05-16 1989-11-21 Nec Corp ３‐５族化合物半導体のデジタルエッチング方法
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US7056773B2 (en) * 2004-04-28 2006-06-06 International Business Machines Corporation Backgated FinFET having different oxide thicknesses
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
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JP5209237B2 (ja) * 2007-06-19 2013-06-12 大日本スクリーン製造株式会社 熱処理装置
KR20100114037A (ko) * 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
EP2342739A4 (en) * 2008-09-17 2013-05-22 Applied Materials Inc MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES
JP5564311B2 (ja) * 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法
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Also Published As

Publication number Publication date
KR20170129912A (ko) 2017-11-27
US20160276162A1 (en) 2016-09-22
JP6807860B2 (ja) 2021-01-06
KR102494614B1 (ko) 2023-02-02
WO2016153716A1 (en) 2016-09-29
CN107431033A (zh) 2017-12-01
TW201705293A (zh) 2017-02-01
CN113981414A (zh) 2022-01-28
TWI691001B (zh) 2020-04-11
CN107431033B (zh) 2021-10-22
JP2018514943A (ja) 2018-06-07

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