JP6807860B2 - ３ｄコンフォーマル処理用原子層処理チャンバ - Google Patents

３ｄコンフォーマル処理用原子層処理チャンバ Download PDF

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Publication number
JP6807860B2
JP6807860B2 JP2017549291A JP2017549291A JP6807860B2 JP 6807860 B2 JP6807860 B2 JP 6807860B2 JP 2017549291 A JP2017549291 A JP 2017549291A JP 2017549291 A JP2017549291 A JP 2017549291A JP 6807860 B2 JP6807860 B2 JP 6807860B2
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substrate
temperature
processing chamber
processing
radical
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Japanese (ja)
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JP2018514943A5 (enExample
JP2018514943A (ja
Inventor
ウェイ リウ，
ウェイ リウ，
アビラシュ ジェー． マユール，
アビラシュ ジェー． マユール，
フィリップ スタウト，
フィリップ スタウト，
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Applied Materials Inc
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Applied Materials Inc
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    • H10P50/242—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H10P14/6339—
    • H10P14/6518—
    • H10P14/6526—
    • H10P14/6532—
    • H10P14/6905—
    • H10P32/20—
    • H10P72/0434—
    • H10P72/0436—
    • H10P72/0602—
    • H10P72/7621—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
JP2017549291A 2015-03-20 2016-02-25 ３ｄコンフォーマル処理用原子層処理チャンバ Active JP6807860B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562135836P 2015-03-20 2015-03-20
US62/135,836 2015-03-20
PCT/US2016/019619 WO2016153716A1 (en) 2015-03-20 2016-02-25 An atomic layer process chamber for 3d conformal processing

Publications (3)

Publication Number Publication Date
JP2018514943A JP2018514943A (ja) 2018-06-07
JP2018514943A5 JP2018514943A5 (enExample) 2019-04-11
JP6807860B2 true JP6807860B2 (ja) 2021-01-06

Family

ID=56925242

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JP2017549291A Active JP6807860B2 (ja) 2015-03-20 2016-02-25 ３ｄコンフォーマル処理用原子層処理チャンバ

Country Status (6)

Country Link
US (1) US20160276162A1 (enExample)
JP (1) JP6807860B2 (enExample)
KR (1) KR102494614B1 (enExample)
CN (2) CN113981414B (enExample)
TW (1) TWI691001B (enExample)
WO (1) WO2016153716A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573532B2 (en) 2018-06-15 2020-02-25 Mattson Technology, Inc. Method for processing a workpiece using a multi-cycle thermal treatment process
JP7065728B2 (ja) * 2018-08-17 2022-05-12 東京エレクトロン株式会社 成膜方法及び成膜装置
JP7018849B2 (ja) * 2018-08-17 2022-02-14 東京エレクトロン株式会社 成膜方法及び成膜装置

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US5024724A (en) * 1987-03-27 1991-06-18 Sanyo Electric Co., Ltd. Dry-etching method
JPH01103840A (ja) * 1987-10-16 1989-04-20 Sanyo Electric Co Ltd ドライエツチング方法
JPH01289121A (ja) * 1988-05-16 1989-11-21 Nec Corp ３‐５族化合物半導体のデジタルエッチング方法
JP3184988B2 (ja) * 1991-12-10 2001-07-09 科学技術振興事業団 結晶面異方性ドライエッチング方法
US6143082A (en) * 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6303518B1 (en) * 1999-09-30 2001-10-16 Novellus Systems, Inc. Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers
US6686298B1 (en) * 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
KR20020083767A (ko) * 2001-04-30 2002-11-04 주식회사 하이닉스반도체 선택적 에피택셜 성장 공정에서의 기판 세정 방법
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7056773B2 (en) * 2004-04-28 2006-06-06 International Business Machines Corporation Backgated FinFET having different oxide thicknesses
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070281082A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US7416989B1 (en) * 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7837790B2 (en) * 2006-12-01 2010-11-23 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US7629275B2 (en) * 2007-01-25 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-time flash anneal process
JP5209237B2 (ja) * 2007-06-19 2013-06-12 大日本スクリーン製造株式会社 熱処理装置
KR20100114037A (ko) * 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
EP2342739A4 (en) * 2008-09-17 2013-05-22 Applied Materials Inc MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES
JP5564311B2 (ja) * 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法
US8748259B2 (en) * 2010-03-02 2014-06-10 Applied Materials, Inc. Method and apparatus for single step selective nitridation
US20130196078A1 (en) * 2012-01-31 2013-08-01 Joseph Yudovsky Multi-Chamber Substrate Processing System
US20130344688A1 (en) * 2012-06-20 2013-12-26 Zhiyuan Ye Atomic Layer Deposition with Rapid Thermal Treatment
SG11201506367TA (en) * 2013-03-15 2015-09-29 Applied Materials Inc Apparatus and methods for pulsed photo-excited deposition and etch
JP6368773B2 (ja) * 2013-04-30 2018-08-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 空間的に分散されたガス流路を有する流量制御ライナー
US9929014B2 (en) * 2013-11-27 2018-03-27 Entegris, Inc. Dopant precursors for mono-layer doping
US9401273B2 (en) * 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
US9425041B2 (en) * 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation

Also Published As

Publication number Publication date
KR20170129912A (ko) 2017-11-27
US20160276162A1 (en) 2016-09-22
KR102494614B1 (ko) 2023-02-02
WO2016153716A1 (en) 2016-09-29
CN107431033A (zh) 2017-12-01
CN113981414B (zh) 2024-11-08
TW201705293A (zh) 2017-02-01
CN113981414A (zh) 2022-01-28
TWI691001B (zh) 2020-04-11
CN107431033B (zh) 2021-10-22
JP2018514943A (ja) 2018-06-07

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