CN113614922A - 显示基板、显示装置 - Google Patents

显示基板、显示装置 Download PDF

Info

Publication number
CN113614922A
CN113614922A CN202080003079.7A CN202080003079A CN113614922A CN 113614922 A CN113614922 A CN 113614922A CN 202080003079 A CN202080003079 A CN 202080003079A CN 113614922 A CN113614922 A CN 113614922A
Authority
CN
China
Prior art keywords
transistor
substrate
pole
line pattern
orthographic projection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080003079.7A
Other languages
English (en)
Inventor
刁永富
陈祯祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of CN113614922A publication Critical patent/CN113614922A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

一种显示基板和显示装置，显示基板包括基底(50)和在基底(50)上阵列分布的多个子像素；子像素包括：沿第一方向(Y)延伸的数据线图形(DATA1，DATA2)；包括沿第一方向(Y)延伸的部分的电源信号线图形(VDD)；以及子像素驱动电路，子像素驱动电路包括：两个开关晶体管(T4，T5)、驱动晶体管(T3)和存储电容(Cst)；存储电容(Cst)的第一极板(Cst1)与驱动晶体管(T3)的栅极(203g)耦接，存储电容(Cst)的第二极板(Cst2)与电源信号线图形(VDD)耦接；两个开关晶体管(T4，T5)的第二极(D4，D5)均与驱动晶体管(T3)的第一极(S3)耦接，两个开关晶体管(T4，T5)中的至少一个开关晶体管(T4，T5)的第二极(D4，D5)在基底(50)上的正投影，与电源信号线图形(VDD)在基底(50)上的正投影至少部分重叠，且与存储电容(Cst)的第二极板(Cst2)在基底(50)上的正投影至少部分重叠。

Description

PCT国内申请，说明书已公开。

Claims (43)

  1. PCT国内申请，权利要求书已公开。
CN202080003079.7A 2019-11-29 2020-11-27 显示基板、显示装置 Pending CN113614922A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/CN2019/121948 WO2021102904A1 (zh) 2019-11-29 2019-11-29 显示基板及其制作方法、显示装置
CNPCT/CN2019/121948 2019-11-29
PCT/CN2020/132389 WO2021104481A1 (zh) 2019-11-29 2020-11-27 显示基板、显示装置

Publications (1)

Publication Number Publication Date
CN113614922A true CN113614922A (zh) 2021-11-05

Family

ID=76128962

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980002702.4A Pending CN113196486A (zh) 2019-11-29 2019-11-29 显示基板及其制作方法、显示装置
CN202080003079.7A Pending CN113614922A (zh) 2019-11-29 2020-11-27 显示基板、显示装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201980002702.4A Pending CN113196486A (zh) 2019-11-29 2019-11-29 显示基板及其制作方法、显示装置

Country Status (9)

Country Link
US (2) US11469291B2 (zh)
EP (1) EP3993038A4 (zh)
JP (1) JP2023508120A (zh)
KR (1) KR20220106037A (zh)
CN (2) CN113196486A (zh)
AU (1) AU2020390375B2 (zh)
BR (1) BR112021023944A2 (zh)
MX (1) MX2021014072A (zh)
WO (2) WO2021102904A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220158597A (ko) * 2020-03-25 2022-12-01 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 패널과 디스플레이 패널의 제조 방법 및 디스플레이 장치
CN111445863B (zh) * 2020-05-14 2021-09-14 京东方科技集团股份有限公司 一种像素驱动电路及其驱动方法、显示装置
KR20220037011A (ko) * 2020-09-16 2022-03-24 삼성전자주식회사 반도체 장치
KR20220062185A (ko) * 2020-11-06 2022-05-16 삼성디스플레이 주식회사 유기 발광 표시 장치
US11837142B2 (en) * 2021-02-04 2023-12-05 Boe Technology Group Co., Ltd. Array substrate and display device
CN113363266B (zh) * 2021-06-09 2023-06-30 合肥维信诺科技有限公司 阵列基板及像素驱动电路
US11810508B2 (en) 2021-07-30 2023-11-07 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and display device
KR20230023122A (ko) * 2021-08-09 2023-02-17 삼성디스플레이 주식회사 표시 장치
CN116134507A (zh) * 2021-09-14 2023-05-16 京东方科技集团股份有限公司 显示面板和显示装置
WO2023050269A1 (zh) * 2021-09-30 2023-04-06 京东方科技集团股份有限公司 显示面板及显示装置
CN114283763B (zh) * 2021-12-27 2023-04-07 昆山国显光电有限公司 像素驱动电路的布线结构、显示面板和显示装置
CN116762490A (zh) * 2022-01-10 2023-09-15 京东方科技集团股份有限公司 显示基板和显示装置
CN115101022A (zh) * 2022-06-30 2022-09-23 厦门天马显示科技有限公司 一种像素驱动电路、显示面板及显示装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953088A (en) * 1997-12-25 1999-09-14 Kabushiki Kaisha Toshiba Liquid crystal display with shield electrodes arranged to alternately overlap adjacent pixel electrodes
JP5198474B2 (ja) 2008-01-31 2013-05-15 シャープ株式会社 表示装置、アクティブマトリクス基板
KR101567336B1 (ko) 2008-12-22 2015-11-11 삼성디스플레이 주식회사 표시 기판 및 그 제조 방법
US8947382B2 (en) 2012-02-28 2015-02-03 Motorola Mobility Llc Wearable display device, corresponding systems, and method for presenting output on the same
KR102367274B1 (ko) 2014-06-25 2022-02-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시패널과 그 제조방법
KR102218725B1 (ko) 2014-06-26 2021-02-24 엘지디스플레이 주식회사 이중 광 차단층을 구비한 산화물 반도체를 포함하는 박막 트랜지스터 기판
CN104882450B (zh) 2015-04-30 2018-05-25 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
TWI594440B (zh) 2015-05-22 2017-08-01 鴻海精密工業股份有限公司 薄膜電晶體、薄膜電晶體的製造方法及陣列基板的製造方法
KR102628884B1 (ko) 2015-11-27 2024-01-26 엘지디스플레이 주식회사 유기발광 다이오드 표시장치
US10311782B2 (en) 2016-06-15 2019-06-04 Apple Inc. Light-emitting diode display with reduced leakage
KR102584959B1 (ko) 2016-08-31 2023-10-06 엘지디스플레이 주식회사 표시장치
KR20180040185A (ko) 2016-10-11 2018-04-20 삼성디스플레이 주식회사 표시 장치
KR20180099976A (ko) * 2017-02-27 2018-09-06 삼성디스플레이 주식회사 표시 장치
CN108154842B (zh) 2018-01-04 2020-05-01 武汉天马微电子有限公司 一种有机发光显示面板和电子设备
KR102497286B1 (ko) * 2018-07-09 2023-02-08 삼성디스플레이 주식회사 디스플레이 장치
CN109659350B (zh) 2019-02-01 2021-02-26 武汉华星光电半导体显示技术有限公司 一种像素结构
CN109856874A (zh) 2019-02-28 2019-06-07 武汉天马微电子有限公司 阵列基板、显示面板和显示装置
WO2020198975A1 (zh) * 2019-03-29 2020-10-08 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板
CN110211975B (zh) 2019-06-27 2022-02-22 京东方科技集团股份有限公司 一种阵列基板、显示面板、显示装置
CN110335564A (zh) 2019-06-29 2019-10-15 上海天马有机发光显示技术有限公司 一种阵列基板、显示面板及显示装置
CN110190073B (zh) 2019-07-25 2019-11-19 武汉华星光电半导体显示技术有限公司 阵列基板
KR20210057280A (ko) * 2019-11-11 2021-05-21 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
AU2020390375A1 (en) 2021-12-09
US20210366393A1 (en) 2021-11-25
WO2021104481A9 (zh) 2021-08-05
KR20220106037A (ko) 2022-07-28
EP3993038A4 (en) 2022-09-14
US11469291B2 (en) 2022-10-11
US20210193780A1 (en) 2021-06-24
JP2023508120A (ja) 2023-03-01
WO2021104481A1 (zh) 2021-06-03
WO2021102904A1 (zh) 2021-06-03
MX2021014072A (es) 2021-12-10
AU2020390375B2 (en) 2023-02-16
BR112021023944A2 (pt) 2022-01-18
CN113196486A (zh) 2021-07-30
EP3993038A1 (en) 2022-05-04
US11968862B2 (en) 2024-04-23

Similar Documents

Publication Publication Date Title
CN113614922A (zh) 显示基板、显示装置
CN113853643B (zh) 显示基板及其制作方法、显示装置
CN111508977B (zh) 一种显示面板及其制作方法、显示装置
US11875752B2 (en) Display panel comprising initialization signal line with protruding portion, display device and manufacture method for the same
JP7401064B2 (ja) 表示パネル及びその製作方法、表示装置
CN112436042A (zh) 一种显示基板、显示装置
CN114586163A (zh) 显示基板及其制作方法、显示装置
CN114902320B (zh) 显示基板及其驱动方法、显示装置
US11751450B2 (en) Display panel and display device
CN114616668A (zh) 一种显示基板及其制作方法、显示装置
CN114207696A (zh) 显示面板及其制作方法、显示装置
RU2779413C1 (ru) Подложка дисплея и устройство отображения
CN114616675A (zh) 一种显示基板及其制作方法、显示装置
US20240237446A1 (en) Display substrate and display device
US11943983B2 (en) Display substrate, method for manufacturing the same, and display device
CN114450797A (zh) 一种显示基板及其制作方法、显示装置
CN115835699A (zh) 一种显示基板和显示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination