CN113300490B - 以最小的远场增益在近场距离处累积能量的近场天线 - Google Patents
以最小的远场增益在近场距离处累积能量的近场天线 Download PDFInfo
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Abstract
本公开涉及以最小的远场增益在近场距离处累积能量的近场天线。近场天线包括:(i)具有相对的第一和第二平坦表面以及一个或多个切口的导电板,所述一个或多个切口穿过导电板从第一表面延伸到第二表面;(ii)绝缘体;以及(iii)通过绝缘体与导电板的第一表面分开的馈电元件,其被配置成将多个RF功率传输信号导向导电板。这多个RF功率传输信号中的至少一些辐射穿过(一个或多个)切口并在导电板的近场距离内累积,以在(一个或多个)切口中的每个切口处产生至少两个不同的累积RF能量区。此外,至少部分地基于限定(一个或多个)切口中的每个切口的一组尺寸和(一个或多个)切口的布置来限定(一个或多个)切口处的至少两个不同的累积RF能量区。
Description
分案声明
本公开是申请日为2018年05月09日、发明名称为“以最小的远场增益在近场距离处累积能量的近场天线”、申请号为:201880043609.3的中国发明专利申请的分案申请。
技术领域
本公开总体上涉及无线功率传输,并且更特别地涉及在近场距离处累积能量以将功率无线传送到接收器的近场天线(例如,非感应谐振近场天线)。
背景技术
诸如智能电话、平板电脑、笔记本电脑和其他电子设备之类的便携式电子设备已成为与他人进行通信和交互的必需品。然而,便携式电子设备的频繁使用会用掉大量的功率,这会迅速耗尽附接到这些设备的电池。感应充电垫(pad)和便携式设备中的对应的感应线圈允许用户通过将设备置于感应垫上的特定位置来对设备进行无线充电,从而允许由于感应垫中以及设备中的相应线圈之间的磁耦合而对设备进行基于接触的充电。
然而,传统的感应充电垫具有许多缺点。举例来说,由于在充电垫的表面上存在间隙(“死区”或“冷区”),因此用户通常必须将其设备置于充电垫上的特定位置处和特定取向上。换言之,为了进行最佳充电,充电垫中的线圈需要与设备中的线圈对齐,以便发生所需的磁耦合。此外,将其他金属对象置于感应充电垫附近可能会干扰感应充电垫的操作,因此,即使用户将其设备置于准确的正确位置,如果另一金属对象也在垫上,则磁耦合仍然可能不会发生,并且感应充电垫不会对设备进行充电。对于许多用户而言,这会导致令人沮丧的体验,因为他们可能无法恰当地对其设备进行充电。此外,感应充电需要将相对较大的接收器线圈置于要充电的设备内,这对于内部空间非常宝贵的设备而言并不理想。
使用电磁辐射(例如微波辐射波)进行充电提供了希望,但是RF充电通常集中于远场充电而非近场充电,在近场充电中,要充电的设备被置于RF能量发射器的顶部。此外,控制远场增益是一个挑战,必须也要解决该挑战以避免对在某些频带(例如,微波频带)中操作的其他设备造成干扰。
发明内容
因此,需要一种近场无线充电方案,该方案(i)在近场距离上累积能量以将功率无线传送到接收器,(ii)最小化远场增益以避免对其他设备的干扰,并遵守政府的准则和法规,并且(iii)允许用户将其设备置于垫上的任何位置而仍然接收无线传送的能量。在一些实施例中,这些充电垫包括多个近场天线(例如,非感应谐振近场天线),并且下面描述一种操作一个这样的近场天线的方法。
为了本公开的目的,本文描述的近场天线可互换地称为单元(unit cell)天线、NF天线和非感应谐振天线。同样,提到的近场传输涵盖距充电垫发射器的表面多达且包括1至5毫米的距离的电磁波辐射,而提到的远场传输涵盖超过5毫米(并且距远场发射器多达30英尺)的距离的电磁波辐射。在一些情况下,提到的近场传输涵盖多达操作频率的四分之一波长(例如,5.8GHz的操作频率的四分之一波长约为12.922毫米)的距离的电磁波辐射。在一些实施例中,操作频率在400MHz至60GHz的范围内。
(A1)在一些实施例中,一种操作近场天线的方法包括:提供近场天线,所述近场天线包括导电板,所述导电板具有相对的第一和第二平坦表面以及一个或多个切口(cutout)(本文也称为一个或多个狭槽),所述一个或多个切口穿过所述导电板从第一表面延伸到第二表面。所述近场天线还包括通过绝缘体与所述导电板的第一表面分开的馈电元件。所述方法还包括使所述馈电元件将多个RF功率传输信号导向所述导电板,并在所述导电板处接收来自所述馈电元件的所述多个RF功率传输信号。所述方法还包括穿过所述一个或多个切口辐射所述多个RF功率传输信号中的至少一些,以使得来自所述多个RF功率传输信号的RF能量在所述导电板的近场距离内累积,以在所述一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区。至少部分地基于以下来限定在所述一个或多个切口中的每个切口处的所述至少两个不同的累积RF能量区:(i)限定所述一个或多个切口中的每个切口的一组尺寸,以及(ii)所述一个或多个切口的布置。
(A2)在A1的方法的一些实施例中,所述一个或多个切口中的第一切口形成第一曲折线图案,并且所述一个或多个切口中的第二切口形成第二曲折线图案。
(A3)在A2的方法的一些实施例中,第一曲折线图案的形状是第二曲折线图案的形状的镜像,第一曲折线图案和第二曲折线图案具有相同的一组尺寸,并且第一曲折线图案的形状相对于第二曲折线图案的形状旋转(例如,旋转180度)。例如,第一曲折线图案的形状与第二曲折线图案的形状交错(例如,两个U形图案,每个U形图案的一个腿交错或插入在另一U形图案的两个腿之间,如图2中所示并在下面更详细地描述的那样)。替换地,在一些实施例中,单个切口形成对称的曲折线图案(例如,如图5A中所示)。
(A4)在A1至A3中的任一个的方法的一些实施例中,所述一个或多个切口中的相应切口具有相应的长度,所述相应的长度至少与所述多个RF功率传输信号中的相应的RF功率传输信号的波长一样长。
(A5)在A4的方法的一些实施例中,所述相应的切口至少包括:(i)被限定在第一方向上的第一切口部分,以及(ii)被限定在第二方向上的第二切口部分,第二方向与第一方向正交。此外,在第一切口部分处产生(例如,沿着第一切口部分并沿着第一方向形成)所述至少两个不同的累积RF能量区中的第一个,并且在第二切口部分处产生(例如,沿着第二切口部分并沿着第二方向形成)所述至少两个不同的累积RF能量区中的第二个。
(A6)在A1至A5中的任一个的方法的一些实施例中,所述馈电元件至少是贴片天线的组件,其中,所述绝缘体设置在所述馈电元件与所述导电板之间。
(A7)在A1至A5中的任一个的方法的一些实施例中,所述馈电元件是贴片天线的组件,所述贴片天线至少部分地包封在所述绝缘体内。
(A8)在A1至A7中的任一个的方法的一些实施例中,所述绝缘体选自包括以下的群组:聚合物、纤维增强聚合物、玻璃和空气。
(A9)在A1至A8中的任一个的方法的一些实施例中,所述至少两个不同的区覆盖所述导电板的第二表面的至少80%的表面面积。
(A10)在A1至A9中的任一个的方法的一些实施例中,所述至少两个不同的区覆盖所述导电板的第二表面的至少90%的表面面积。
(A11)在A1至A10中的任一个的方法的一些实施例中,所述至少两个不同的累积RF能量区在所述导电板的第二表面上方延伸不超过5毫米(mm)。
(A12)在A1至A11中的任一个的方法的一些实施例中,所述至少两个不同的累积RF能量区在所述导电板的第二表面上方延伸不超过4毫米。
(A13)在A1至A12中的任一个的方法的一些实施例中,所述至少两个不同的累积RF能量区在所述导电板的第二表面上方延伸不超过3毫米。
(A14)在A1至A13中的任一个的方法的一些实施例中,所述多个RF功率传输信号以选自包括以下的群组的频率进行发射:5.8GHz、2.4GHz和900MHz。
(A15)在A1至A14中的任一个的方法的一些实施例中,所述近场天线是第一近场天线,并且是近场充电垫(例如,图1A至1B的发射器垫100)的一部分,所述近场充电垫还包括位于所述近场充电垫内与第一近场天线相邻的第二近场天线。此外,与第二近场天线相关联的相应切口相对于与第一近场天线相关联的所述一个或多个切口旋转。
(A16)在A1至A15中的任一个的方法的一些实施例中,响应于确定无线功率接收器被置于所述表面的预定距离内,所述馈电元件从功率放大器接收所述一个或多个RF功率传输信号。
(A17)在A16的方法的一些实施例中,所述预定距离距所述表面小于约5mm。
(A18)在A17的方法的一些实施例中,通过测量与连接到所述近场天线(例如,与之进行电通信)的处理器所接收到的传输相关联的信号强度水平来监控所述预定距离,并且所述信号强度水平与从所述无线功率接收器接收到的广播信号相关联。
(A19)在A1至A18中的任一个的方法的一些实施例中,所述馈电元件和所述绝缘体被导电壳体所包围。此外,所述导电壳体在所述壳体的一端处限定了开口,并且所述导电板封闭了所述开口。
(A20)在A1至A19中的任一个的方法的一些实施例中,所述导电板是第一导电板,并且所述近场天线还包括设置在第一导电板的第二表面上的另一绝缘体(例如,介电层)以及设置在所述另一绝缘体的顶部的第二导电板。在一些实施例中,第二导电板包括一个或多个附加切口。替换地,在一些实施例中,作为第二导电板的替代,所述近场天线还包括沉积在所述另一绝缘体的表面上的导电层。
(A21)在A1至A20中的任一个的方法的一些实施例中,所述导电板是沉积在所述绝缘体的表面上的导电层。替换地,在一些实施例中,所述绝缘体是沉积在所述导电板的第一表面上的介电层。
(A22)在A1至A21中的任一个的方法的一些实施例中,所述绝缘体是第一绝缘体,并且所述近场天线还包括第二绝缘体,所述第二绝缘体将所述馈电元件与接地板(例如,图3A的接地板308)分开。
(A23)在另一方面中,提供了一种近场天线,并且所述近场天线包括上文在A1至A22中描述的近场天线的结构特性,并且所述近场天线还被配置成执行上文在A1至A22中描述的方法步骤。
(A24)在另一方面中,提供了一种包括多个近场天线的发射器垫。在一些实施例中,所述发射器垫包括至少一个近场天线、一个或多个通信组件、一个或多个处理器以及存储一个或多个程序的存储器,所述程序在由所述一个或多个处理器执行时使所述发射器垫执行A1至A22中的任一个中描述的方法。
(A25)在又一方面中,提供了一种发射器垫(其包括多个近场天线),并且所述发射器垫包括用于执行在A1至A22中的任一个中描述的方法的装置。
(A26)在仍另一方面中,提供了一种非暂态计算机可读存储介质。所述非暂态计算机可读存储介质存储可执行指令,所述可执行指令在由具有一个或多个处理器/核心的发射器垫(其包括多个近场天线)执行时,使所述发射器垫执行在A1至A22中的任一个中描述的方法。
(B1)在一些实施例中,一种制造近场天线的方法包括:选择针对一个或多个切口的一组尺寸,所述一个或多个切口要被限定为穿过近场天线的导电板,所述导电板具有相对的第一和第二平坦表面。所述方法还包括以预定义的布置形成穿过所述导电板的第一表面和第二表面的一个或多个切口,所述一个或多个切口中的每个切口具有该组尺寸。所述方法还包括将绝缘体耦合至所述导电板的第一表面,并将馈电元件耦合至所述绝缘体。在一些实施例中,所制造的近场天线包括上文在A1至A22中描述的近场天线的结构特性,并且所述近场天线还被配置成执行上文在A1至A22中描述的方法步骤。
(C1)在又一方面中,提供了一种近场天线。所述近场天线包括:(i)馈电元件,其被配置成将多个射频(RF)功率传输信号导向导电板,(ii)穿过所述导电板限定的第一狭槽,其长度至少与由所述馈电元件发射的所述多个RF功率传输信号中的相应RF功率传输信号的波长一样长,以及(iii)穿过所述导电板限定的第二狭槽,所述第二狭槽与第一狭槽互锁(interlock),并且其长度至少与所述相应RF功率传输信号的波长一样长。此外,在经由第一和第二狭槽传导所述多个RF功率传输信号时,沿第一和第二狭槽中的每个狭槽的长度形成至少两个不同的累积RF能量区。所述近场天线包括上文在A1至A22中描述的近场天线的结构特性,并且所述近场天线还被配置成执行上文在A1至A22中描述的方法步骤。
附图说明
为了能够更详细地理解本公开,可以参考各种实施例的特征进行更具体的描述,在附图中图示其中的一些实施例。然而,附图仅图示了本公开的相关特征,并且因此不应被认为是限制性的,因为该描述可以允许有其他有效特征。
图1A至1B示出了图示根据一些实施例的代表性发射器垫的图。
图2是根据一些实施例的发射器垫的顶部的示意图。
图3A至3D示出了根据一些实施例的发射器垫的横截面视图。
图4A至4C示出了根据一些实施例的发射器垫的相应近场天线的各种视图。
图5A至5B示出了根据一些实施例的发射器垫的相应近场天线的顶视图。
图6是示出根据一些实施例的操作近场天线的方法的流程图。
图7是示出根据一些实施例的制造近场天线的方法的流程图。
图8示出了根据一些实施例的形成在发射器垫上的各种功率分布(例如,能量累积)。
图9是示出包括一个或多个切口的单元天线的示例辐射图案的图示。
根据惯例,附图中图示的各种特征可能未按比例绘制。因此,为了清楚起见,各种特征的尺寸可以任意扩大或缩小。另外,一些附图可能未描绘给定系统、方法或设备的所有组件。最后,在整个说明书和附图中,同样的参考标号可以用于标示同样的特征。
具体实施方式
本文描述了众多细节以便提供对附图中图示的示例实施例的透彻理解。然而,可以在没有这些具体细节中的许多的情况下实践一些实施例,并且权利要求的范围仅由权利要求中具体阐述的那些特征和方面来限制。此外,没有详尽地描述公知的过程、组件和材料,以免不必要地混淆本文描述的实施例的相关方面。
图1A是根据一些实施例的发射器垫100的高级框图。发射器垫100(在本文中也称为近场射频(RF)充电垫或近场充电垫)包括组件102。发射器垫被配置成产生电磁能量的受控的近场累积,该近场累积被提供给置于其附近或顶部(例如,在发射器垫100的表面的5mm内)的接收器。例如,图1B图示了被置于发射器垫100顶部的无线功率接收器120(例如,耦合到或容纳在需要电力来操作的任何类型的电子设备中的接收器),无线功率接收器120从电磁能量的近场累积收集能量,以给耦合到无线功率接收器的设备进行充电或供电。在本文的描述中,射频(RF)功率传输波被用作主要的例证性示例,但是本领域普通技术人员在考虑到这些描述后将领会的是,在某些实施例或实施方式中,可以代替地使用任何类型的电磁辐射波。
发射器垫100的组件102包括例如一个或多个处理器104、存储器106、一个或多个单元(unit cell)天线110(本文也称为近场天线)、一个或多个通信组件112和/或一个或多个发射器传感器114。在一些实施例中,这些组件102通过通信总线108互连。在一些实施例中,组件102被容纳在发射器垫100内。替换地,在一些实施例中,一个或多个组件102被设置在发射器垫100之外(例如,其外部)。例如,一个或多个处理器104、存储器106、一个或多个通信组件112可以是外部的,而一个或多个单元天线110和一个或多个发射器传感器114可以是内部的(或组件的某些其他组合/布置)。
在一些实施例中,(一个或多个)通信组件112包括例如能够使用各种各样的无线协议(例如,IEEE 802.15.4、Wi-Fi、ZigBee、6LoWPAN、Thread、Z波、蓝牙智能、ISA100.11a、无线HART、MiWi等)、有线协议(例如,以太网、HomePlug等)和/或任何其他合适的通信协议(包括截至本文档提交之日尚未开发的通信协议)来进行数据通信的硬件。
在一些实施例中,通信组件112通过电子设备将通信信号发送给接收器120。例如,通信组件112可以将信息传递到电子设备(例如,图2的电子设备210)的通信组件,电子设备进而可以(例如,经由总线)将该信息传递到接收器120。
在一些实施例中,接收器120包括通信组件,其被配置成通过由接收器侧通信组件生成的相应通信信号来与发射器垫100进行各种类型数据的通信。数据可以包括接收器120的位置指示符、电子设备的功率状态、接收器120的状态信息、电子设备的状态信息、关于功率波的状态信息和/或(例如,不同的区的)能量累积的状态信息。换言之,接收器120可以通过通信信号向发射器垫100提供关于发射器垫100的当前操作(或单元(unit cell)的当前操作)的数据,包括:识别接收器120的当前位置的信息、接收器120接收到的能量(即,可用功率)的量以及电子设备接收和/或使用的可用功率的量、以及包含其他类型的信息的其他可能的数据点。该信息可以由发射器垫100结合本文描述的实施例来使用。
在一些实施例中,包含在通信信号中的数据被电子设备、接收器120和/或发射器垫100用于确定对单元天线110为了发射功率波所使用的一个或多个特性的调整。使用通信信号,发射器垫100接收数据,所述数据例如用于识别发射器垫100上的接收器120、识别电子设备、确定功率波的安全和有效波形特性和/或训练(hone)能量累积的布置。在一些实施例中,接收器120使用通信信号来进行数据通信,例如用于警告发射器垫100接收器120已被置于或将要被置于发射器垫100上、提供有关电子设备的信息、提供对应于电子设备的用户信息、指示接收到的功率波的有效性和/或提供用于形成能量的近场累积的更新的特性或传输参数。
发射器传感器114的非限制性示例包括例如红外、热电(pyroelectric)、超声、激光、光学、多普勒、陀螺仪、加速度计、微波、毫米、RF驻波传感器、谐振LC传感器、电容传感器、光传感器和/或感应传感器。在一些实施例中,用于(一个或多个)发射器传感器114的技术包括二进制传感器(binary sensor),该二进制传感器采集诸如人类或其他敏感对象的位置之类的立体传感器数据。
在一些实施例中,发射器垫100的存储器106存储一个或多个程序(例如,指令集)和/或数据结构,其在本文中统称为“模块”。在一些实施例中,存储器106或存储器106的非暂态计算机可读存储介质存储以下模块107(例如,程序和/或数据结构)或其子集或超集:
·从接收器120接收到的信息(例如,其由接收器120的传感器生成,并且然后被发送给发射器垫100);
·从(一个或多个)发射器传感器114接收到的信息;
·RF功率传输信号生成模块,其用于生成和发射(例如,结合(一个或多个)单元天线110)RF功率传输信号(例如,图4C的RF功率传输信号422);
·特性选择模块,其用于选择RF功率传输信号的波形特性;和/或
·信标发送模块,其用于发送(或接收)用于检测(例如,在发射器垫100的近场传输范围内的)接收器120的通信信号。
上面所述的模块(例如,数据结构和/或包括指令集的程序)不需要被实现为单独的软件程序、过程或模块,并且因此在各种实施例中可以组合或以其他方式重新布置这些模块的各种子集。在一些实施例中,存储器106存储上面所述的模块的子集。此外,存储器106可以存储上面未描述的附加模块。在一些实施例中,存储在存储器106或存储器106的非暂态计算机可读存储介质中的模块提供了用于在下面描述的方法中实现相应操作的指令。在一些实施例中,这些模块中的一些或全部可以用纳入了部分或全部的模块功能性的专用硬件电路来实现。上面所述的元件中的一个或多个可以由一个或多个处理器104来执行。在一些实施例中,关于存储器106描述的模块中的一个或多个被实现在通信耦合到发射器垫100的服务器(未示出)的存储器104上,和/或通过接收器120和/或电子设备的存储器实现。另外,存储器106可以存储其他信息,诸如某些阈值和标准以及某些接收器的标识符。
转到图1B,图示了发射器垫100的简化顶视图。图1B示出了无线功率接收器120(也称为接收器120,例如,在内部或外部耦合到电子设备的接收器),其被置于发射器垫100的顶部,并且然后接收来自由单元天线110形成的近场能量累积的能量。在一些实施例中,接收器120包括用于接收来自由发射器垫100形成的近场能量累积的能量的一个或多个天线、以及用于接收由发射器垫100发送的通信(或发送通信)的通信组件。接收器120的通信组件还可以包括能够使用上面参考(一个或多个)通信组件112列出的各种无线协议进行数据通信的硬件。
接收器120将来自接收的信号(本文也称为RF功率传输信号,或者简称为RF信号、功率波或功率传输信号)的能量转换成电能,以对耦合到接收器120的电子设备进行供电和/或充电。例如,接收器120使用功率转换器来将所捕获的能量从功率波转换成可用于对电子设备进行供电和/或充电的交流(AC)电或直流(DC)电。功率转换器的非限制性示例包括整流器、整流电路、电压调节器以及其它合适的电路和设备。
在一些实施例中,接收器120是可拆卸地耦合到一个或多个电子设备(例如,图2的电子设备210)的独立设备。例如,电子设备具有用于控制电子设备的一种或多种功能的(一个或多个)处理器,并且接收器120具有用于控制接收器的一种或多种功能的(一个或多个)处理器。在一些实施例中,接收器120是电子设备的组件。例如,电子设备的一个或多个处理器控制电子设备和接收器120的功能。另外,在一些实施例中,接收器120包括与电子设备的(一个或多个)处理器通信的(一个或多个)处理器。
在一些实施例中,接收器120直接从发射器垫100接收一个或多个功率波。在一些实施例中,接收器120从由发射器垫100发射的一个或多个功率波产生的一个或多个能量累积(例如,图4B中的能量累积412)收集功率波。如将在下面更详细地讨论的,一个或多个功率波引起在相应的单元110(例如,图4A的单元400)中限定的“切口”(例如,图4A的切口404-A和404-B)处形成能量累积。在一些实施例中,发射器垫100是近场发射器,其向其充电表面的近场距离内发射一个或多个功率波。
在一些实施例中,在从能量累积收集能量之后(如下文更详细地讨论的那样),接收器120的电路系统(例如,集成电路、放大器、整流器和/或电压调节器)将能量转换成可用功率(即,电力),该可用功率对与接收器120相关联的电子设备进行供电(和/或该可用功率存储在电子设备的电池中)。在一些实施例中,接收器120的整流电路将电能从交流转换成直流,以供电子设备使用。在一些实施例中,电压调节电路按照电子设备所需,增大或减小电能的电压,并且可以产生恒定电压以按电子设备所需的形式提供电力。
在一些实施例中,接收器120从由发射器垫100的多个单元天线110形成的电磁能量的近场累积收集能量。在一些实施例中,多个电子设备可以位于发射器垫100的表面上,每个电子设备具有至少一个相应的接收器120,该接收器120用于从发射器垫100接收功率波。在一些实施例中,发射器垫100调整功率波的一个或多个特性(例如,诸如相位、增益、幅度、频率等的波形特性),以可控地形成一个或多个能量累积。如下面参考图4A至4C更详细地描述的那样,发射器垫100可以调整用于发射功率波的特性集,以虑及不同的接收器和容纳接收器的电子设备(例如,接收器120(其可以嵌入在不同类型的电子设备中的不同位置处)与发射器垫100之间的距离可以在不同接收器之间有所不同)。
在一些实施例中,诸如控制器电路和/或波形发生器之类的发射器垫100的电路(未示出)可以至少部分地控制单元天线110的行为。例如,基于通过通信信号从接收器接收到的信息(或由(一个或多个)发射器传感器114收集的数据),控制器电路可以确定用于发射功率波的一组一个或多个波形特性(例如,幅度、频率、方向、相位以及其他特性),所述功率波将会有效地向接收器120提供功率。控制器电路还可以识别将有效地发射功率波的一个或多个单元天线110(例如,接收器120可以位于两个单元之间,并且在这种情况下,可以激活两个单元天线)。
如将更详细地讨论的那样,选择相应的单元天线中的“切口”的尺寸(例如,宽度、深度和长度)以减小用于在相应单元天线的相应表面上形成近场能量累积的功率波的远场增益。例如,选择尺寸,使得当电流沿着相应的切口流动时,产生近场电磁场,并且由相邻单元天线产生的远场电磁场相抵消,从而确保仅留下近场能量累积,从而最小化或消除远场增益。
还如图1B中所示,发射器垫包括多个单元天线(例如,单元110-A……单元110-N)。单元天线在本文中也可互换地称为单元、近场天线、NF天线或非感应谐振NF天线。在一些实施例中,单元天线110覆盖发射器垫100的全部或部分表面面积。多个单元天线110可以接触发射器垫100的顶表面(即,充电表面)(例如,单元100和发射器垫100的其他组件102可以被包封在塑料或其他类型的覆盖层内)。
图2是根据一些实施例的发射器垫200的斜视图。在一些实施例中,发射器垫200是图1的发射器垫100。发射器垫200包括限定内部空腔的壳体202。内部空腔至少容纳多个单元110。此外,壳体202还可以容纳发射器垫100的其他组件102(图1A)。在一些实施例中,壳体202可以使用一体式构造来形成,其中,壳体202的一些或全部被机械加工或模制为单个结构,或者壳体202可以使用多个结构(例如,内部框架结构、形成外部壳体表面的一个或多个结构等)来形成。壳体202可以由金属(例如,钢、铝、黄铜、铜等)、其他合适的材料或这些材料中的任何两种或更多种的组合来形成。在一些实施例中,壳体202的至少两个部分(例如,侧壁和表面)由具有不同电磁特性(例如,磁导率和介电常数)的不同材料制成。在一些实施例中,壳体202完全由阻碍电磁辐射的材料(例如,铜、钢、铝等)制成。
发射器垫200包括导电层或板204。在一些实施例中,导电板204是壳体202的一部分(例如,壳体的一体式构造的一部分)。在一些实施例中,壳体202和导电板204是发射器垫200的不同的组件。在这些实施例中,壳体202在壳体202的一端处包括开口,并且导电板204封闭该开口。在一些实施例中,导电板204和壳体202由相同的材料(例如,相同类型的金属,诸如铜、镍等)制成。在一些实施例中,导电板204和壳体202由至少一种不同的材料制成。
在一些实施例中,发射器垫200还包括接地或接地板(例如,图3A的接地板308)。如图3A中所示,绝缘体(例如,介电材料)可以将导电板204与接地板308分开。
在一些实施例中,导电板204包括多个不同的无线充电区,每个区与至少一个单元相关联(虚线框206-A和206-B限定了相应的无线充电区)。无线充电区是导电板204的其中由于(由相应的单元110)在无线充电区中的一个或多个内形成电磁能量的近场累积而有助于接收器212(例如,图1B的接收器120)的无线充电的区域。在一些实施例中,多个单元基本上覆盖导电板204的所有表面面积(例如80%或更多)。这样,用户可以在导电板204上的各个位置处给他或她的设备进行无线充电。换言之,用户仅需将他或她的包括接收器的设备置于发射器垫上即可进行充电,而无需担心设备的准确位置或取向。
每个单元206包括一个或多个切口208-A和208-B(例如,延伸穿过导电层或板204的通道/狭槽),其有助于在每个无线充电区中形成电磁能量的近场累积。例如,当RF功率传输信号422(图4C)由无线充电区206-A下方的馈电(feed)来发射时,RF信号中的至少一些到达导电板204并激励围绕导电板240的边缘/周界的电流流动209,其沿着与无线充电区206-A的单元天线相关联的每个切口208-A、208-B。基于切口208的尺寸、切口208的布置以及在切口208的每个特定段处的电流209的方向(例如,在切口208-A的段214处的电流209在第一方向上流动,如箭头所示,并且在切口208-A的段216处的电流209在与第一方向相反的第二方向上流动),能量累积从切口208向外辐射(例如,一个电磁场从段214向外辐射,并且另一电磁场从段216向外辐射)。由RF信号激励导电板204形成的这些能量累积在本文中也称为“热区”或简称为“区”。如上所述,接收器可以收集来自这些能量累积的能量,以向耦合到接收器的电子设备传送功率或对其进行充电。
在一些实施例中,每个切口包括一组尺寸(例如,宽度、深度(例如,导电板204的厚度)和长度)。在一个或多个切口处形成的能量累积的特性(例如,高度、宽度、集中度、近场增益、远场增益等)至少部分地取决于一个或多个切口的该组尺寸。在一些情况下,基于应用的要求仔细地选择切口的该组尺寸(以及进而,切口的相应段),以使得能量累积的特性有助于接收器212的恰当充电,例如,选择切口208-A的宽度,使得从切口208-A的段214和216辐射的电磁场至少部分地彼此抵消(例如,在远场区域中),从而最小化远场增益,同时仍产生在导电板204的外表面上方延伸足够远的能量累积,以向嵌入在电子设备内的接收器传送功率(并且由于它们是嵌入的,因此累积需要行进到导电板204的表面上方才能到达这些嵌入的接收器)。
在一些实施例中,相应的无线充电区中的一个或多个切口都具有相同的形状。例如,无线充电区206-A内的单元包括第一切口208-A和第二切口208-B。如图所示,第一切口208-A的形状是第二切口208-B的形状的镜像。此外,在一些实施例中,第一切口208-A和第二切口208-B以交错或插入的方式布置(即,配合)。这样做,在第一切口208-A和第二切口208-B处形成的能量累积覆盖与无线充电区206-A相关联的表面面积的阈值的量(例如,与无线充电区206-A相关联的导电板204的至少80%的表面面积,或更大(或更小)的量)。另外,由于第一和第二切口208的交错或插入的布置,从第一切口208-A的相应段辐射的电磁场的远场分量至少部分地抵消了从第二切口208-B的相应段(例如,彼此相邻的段)辐射的电磁场的远场分量。这样,进一步降低了远场增益。
在一些实施例中,导电板204上的相邻单元相对于彼此旋转。例如,无线充电区206-A内的第一单元相对于无线充电区206-B内的与第一单元相邻的第二单元旋转。第一单元和第二单元包括以相同的交错或插入方式布置的切口。然而,第一单元中的切口沿着第一轴(例如,竖直轴)布置,第二单元中的切口沿着第二轴(例如,水平轴)布置,第二轴垂直于第一轴。由于单元的旋转布置,从第二切口208-B辐射的电磁场的一些部分至少部分地抵消了从与无线充电区206-B相关联的单元的切口209辐射的电磁场的一些部分。这样,进一步降低了远场增益。
电子设备210设置在导电板204的外表面上,并且位于附加的单元(图2中未示出)之上。嵌入在电子设备210中的接收器212(例如,图1B的接收器120)也位于该附加的单元之上。这样,在检测到接收器212之后,发射器垫200(例如,图1A至1B的发射器垫100)可以发起对接收器212的无线充电。在一些实施例中,发射器垫200通过从接收器212接收(或交换)通信信号来检测接收器。替换地或另外,在一些实施例中,发射器垫200经由一个或多个发射器传感器114(图1A)来检测接收器的存在。例如,当电子设备位于导电板204中的切口之一之上时,发射器垫200的光传感器可以检测壳体202的内部空腔内的光的变化。在另一示例中,当电子设备位于导电板204中的切口之一之上时,发射器垫200的红外传感器可以检测导电板204处的温度变化。其他类型的传感器和传感器数据可以用于检测接收器212。
应当理解,尽管切口208被示出为具有特定的形状(例如,U形或马蹄形),但是切口可以具有其他合适的形状(例如,一个发射器垫内的不同的单元天线可以具有不同的形状)。另外,相对于图2中所示的单元206的尺寸的电子设备210和接收器212的尺寸仅是示例性的(例如,相对于电子设备210和接收器212上的尺寸,单元可以更小(或更大))。
在一些实施例中,相应的单元可以具有大约35mm乘35mm的尺寸。因此,包括2乘2的单元布置的发射器垫可以具有大约70mm乘70mm的尺寸。在其他实施例中,发射器垫可以包括3乘3的单元布置,因此发射器垫可以具有大约105mm乘105mm的尺寸。这些仅是示例,并且(发射器垫和各个单元二者的)其他尺寸和单元布置也是可能的。
图3A至3D示出了根据一些实施例的发射器垫200的横截面视图(沿图2的线A-A'截取)。为清楚起见,已经从天线306和馈电元件307中去除了横截面碎片。
如图3A中所示,导电板204包括延伸穿过导电板204(例如,从导电板204的外表面一直延伸到导电板204的内表面)的多个切口(例如,切口302-A)。导电板204以及进而的多个切口的厚度为T1。
发射器垫200还包括绝缘体304,该绝缘体304至少部分地负责将能量累积投射到导体板204上方的不同距离处。绝缘体304将相应的馈电元件307-A和307-B与导电板204的内表面分开。另外,绝缘体304被夹在导电板204与接地板308之间。绝缘体304的厚度为T2。在一些实施例中,导电板204的厚度(T1)大于绝缘体304的厚度(T2),或者反之亦然。在一些实施例中,导电板204的厚度(T1)与绝缘体304的厚度(T2)相同。在一些实施例中,至少部分地基于操作频率来选择绝缘体304的厚度(T2)。例如,绝缘体304的厚度(T2)可以在操作频率的0.03λ至0.5λ的范围内。如上所述,取决于应用,发射器垫200可以在从400MHz(λ=0.75米)至60GHz(λ=0.005米)的频率范围内发射多个RF功率传输信号。因此,当以400MHz的频率操作时,绝缘体304的厚度(T2)可以在大约0.0225米(即22.5mm)至大约0.375米(即375mm)的范围内,并且当以60GHz的频率操作时,绝缘体304的厚度(T2)可以在大约0.00015米(即0.15mm)至大约0.0025米(即2.5mm)的范围内。本领域的技术人员将领会的是,绝缘体304的厚度(T2)可以随应用而变化,并且上面提供的示例仅用于提供上下文。因此,在一些实施例中,绝缘体304的厚度(T2)可以在从大约0.15mm到大约375mm的范围内。
绝缘体304的厚度(T2)可以改变从导电板204辐射的能量累积的一个或多个特性(例如,高度、宽度、集中度、近场增益、远场增益、谐振频率等)。例如,当绝缘体具有第一厚度(T2')时,能量累积可以在导电板204的外表面上方延伸至第一高度,并且当绝缘体具有第二厚度(T2”)时,能量累积可以在导电板204的外表面上方延伸至第二高度,第二高度不同于第一高度。因此,绝缘体304的厚度(T2)可以影响从导电板204辐射的电磁场的整体效率。
在一些实施例中或在一些情况下,还可以选择导电板204的厚度以影响累积的形成(例如,选择导电板204的厚度T1以有助于影响(i)部分电磁场在远场区域中的抵消,以及(ii)能量累积在导电板204的外表面上方的近场区域中延伸得足够远,以向接收器212传送功率)。
在一些实施例中,绝缘体304是空气。替换地,在一些实施例中,绝缘体304是设置在壳体202的内部空腔内的介电材料(例如,聚合物、纤维增强聚合物、玻璃等)。如上所述,绝缘体304的厚度(T2)可以影响能量累积的一个或多个特性。另外,在第二类型的绝缘体上使用第一类型的绝缘体也可能影响能量累积的一个或多个特性。在一些实施例中,绝缘体304支撑导电板204(例如,在绝缘层上形成导电层并且从导电层开始蚀刻切口一直蚀刻到绝缘体)。
发射器垫200包括第一单元305-A和第二单元305-B(由虚线分开)。第一单元305-A包括第一馈电元件307-A,并且第二单元305-B包括第二馈电元件307-B。第一和第二单元天线305可以是一个或多个单元天线110(图1A-1B)的示例。如图所示,第一和第二馈电元件307与导电板204的内表面分开一定距离(D)。然而,在一些实施例中,第一天线和第二天线与导电板204的内表面分开不同的距离。距离(D)的变化可以改变从导电板204辐射的能量累积的一个或多个特性(例如,高度、宽度、集中度、近场增益、远场增益控制等)。在一些实施例中,为了确保适当地形成能量累积,距离(D)小于绝缘体304的厚度(T2)。此外,在一些实施例中,距离(D)比绝缘体304的厚度(T2)小阈值的量。换言之,距离(D)与绝缘体304的厚度(T2)之间的比率满足预定义的范围。例如,该预定义的范围可以将(D)/(T2)的比率限于0.05λ至0.8λ,即0.05λ<(D)/(T2)<0.8λ。如上所述,至少在一些实施例中,绝缘体304的厚度(T2)可以在大约0.15mm至大约375mm的范围内,这取决于发射器垫200的操作频率。因此,在那些实施例中,鉴于将将(D)/(T2)的比率限于0.05λ至0.8λ的预定义的范围,距离(D)可以在大约0.0075mm(例如,当以60GHz的频率操作时)至大约300mm(当以400MHz的频率操作时)的范围内。
在将介电材料布置在壳体202的内部空腔中的那些实施例中,介电材料可以至少部分地包封第一和第二馈电元件307。这样做,进一步支撑了第一和第二馈电元件307(以及发射器垫200的其他天线),并且因此,提高了发射器垫200的耐久性(例如,诸如当发射器垫200掉落时,绝缘体更好地吸收了冲击力)。另外,当馈电元件307至少部分地被介电材料包封时(即,馈电元件307彼此电隔离),大幅降低了第一和第二馈电元件307(以及其他馈电元件)之间的干扰。鉴于这种布置,提高了发射器垫200的整体效率。
在一些实施例中,发射器垫200包括用于每个天线元件的金属贴片元件306。馈电元件307驱动对应的贴片元件306。例如,第一贴片元件306-A由第一馈电元件307-A驱动,并且第二贴片元件306-B由第二馈电元件307-B驱动。馈电元件307可以由本领域技术人员已知的任何合适的材料(例如,铝、铜等)制成。
在一些实施例中,发射器垫200包括接地或接地层或板308。在一些实施例中,接地板308形成壳体202的底表面(图2)。替换地,在一些实施例中,接地板308被置于壳体202内部的底表面的顶部。接地板308可以由与壳体202相同的材料形成,或者可以由不同的材料形成。在一些实施例中,接地板308包括孔(例如,通孔),其允许馈电元件(例如,馈电元件307-A)穿过接地板308。替换地,在一些实施例中,馈电元件不穿过接地板308,而是替代地从某个其他方向(例如,侧面)连接到天线元件。在一些实施例中,接地板308用作反射器,使得RF功率传输信号不能穿过接地板308,而是替代地朝着单元的相应切口反射回去。
图3B是置于导电表面204上的电子设备210的特写横截面视图。如图所示,电子设备210以及进而的接收器212位于切口302-B(例如,导电板204中的多个切口之一)之上。因此,当第一馈电307-A朝着导电板204的内表面发射多个RF功率传输信号时,这多个RF功率传输信号中的至少一些RF功率传输信号激励电流在切口302-B周围流动,并且从而引起在导电板204的近场距离内在切口302-B上方形成电磁能量的累积。然后,接收器212可以从在切口302-B上方形成的能量累积收集能量。
电子设备210包括侧壁322和容纳接收器212的内部空腔324。如图所示,接收器212没有直接置于导电板204的外表面上。替代地,接收器212与导电板204的外表面分开距离“X”(即,侧壁322的厚度)。因此,发射器垫200可以调整由馈电元件307-A发射的功率波的一个或多个特性(例如,诸如相位、增益、幅度、频率等的波形特性),以确保能量累积在导电板204的外表面上方延伸至少距离X。在一些实施例中,发射器垫200调整功率波的一个或多个特性,使得能量累积延伸超过距离X达预定义的量,从而确保接收器212可以从能量累积收集能量。
在一些实施例中,在检测到接收器212的存在之后,发射器垫200调整功率波(例如,图4C的RF功率传输信号422)的一个或多个特性。发射器垫200可以使用上述示例技术来检测接收器212的存在。
替换地或另外,在一些实施例中,在从接收器212接收一个或多个通信信号之后,发射器垫100调整功率波的一个或多个特性。例如,包含在一个或多个通信信号内的数据可以指示接收器212与第一馈电307-A分开特定的距离。发射器垫200可以基于一个或多个通信信号的信号强度、三角测量和/或响应时间(例如,接收器212在发送时对通信信号加时间戳,然后将其与通信信号在发射器垫200处被接收到时的时间戳进行比较)来确定该分开距离。在一些实施例中,发射器垫200使用两种或更多种形式的数据(例如,信号强度与热成像数据的组合或其他组合)来确定该分开距离。使用该分开距离,发射器垫200可以确定电子设备210的侧壁322的厚度(例如,从分开距离中减去馈电307-A与导电板204的外表面之间的固定距离以获得距离“X”)。
在一些实施例中,发射器垫100通过考虑从接收器212获得的数据、由发射器传感器获得的数据、(一个或多个)切口的该组尺寸以及切口布置来调整功率波的一个或多个特性。
图3C是根据一些实施例的发射器垫200的另一横截面视图330(沿图2的线A-A')。为了便于图示和讨论,在图3C至3D中未示出电子设备210和接收器212。另外,为清楚起见,图3C至3D中不包括图3A中所包括的一些其他附图标记。
在其中发射器垫200包括壳体202的那些实施例中,壳体202包括四个侧壁(例如,侧壁332-A、332-B等)、底表面334和与底表面334相对地限定的开口。该开口被配置成容纳导电板204。换言之,导电板204耦合到壳体202的四个侧壁,使得导电板204封闭该开口。
在一些实施例中,底表面334是接地板308(图3A)。替换地,在一些实施例中,如上所述,接地板308被设置在壳体的底表面334的顶部。在底表面334是接地板308的那些实施例中,底表面334包括一个或多个孔(例如,通孔),以允许一个或多个馈电(例如,馈电元件307-A)穿过壳体202。
在一些实施例中,天线类型可以决定(dictate)天线距导电板204的内表面的分开距离。例如,参考图3A,第一和第二馈电307-A、307-B与导电板204的内表面分开第一距离(D)。第一馈电元件307-A和第二馈电元件307-B可以分别对金属贴片306-A和306-B进行馈电(例如,馈电和金属贴片形成第一类型的相应天线,贴片天线,其激励位于上方的一个或多个切口)。另外,馈电元件307-A、307-B可以对各种其他天线类型(例如,单极、偶极、磁环、多层寄生馈电天线等)进行馈电。现在参考图3C,第一和第二馈电元件336-A、336-B与导电板204的内表面分开第二距离(J),第二距离(J)小于第一距离(D)。第一和馈电元件336-A、336-B是第二类型的天线(例如,单极天线)。因此,取决于情况(例如,设计约束,诸如发射器垫200的高度约束),可以使用一种类型的天线,而不是另一种类型的天线。此外,至少在一些情况下,一个或多个切口与馈电元件336-A、336-B之间的互补关系提高了发射器垫200的性能。“互补关系”的示例包括被限定为穿过导体板204的与贴片(例如,微带印刷类型的馈电元件)配对的切口(如图3A中所示)。另一示例包括在导电板204表面的外表面上与狭槽式馈电表面配对的线状导体。应当注意的是,上述示例仅是例证性的,并且取决于情况,结果可能相反。
图3D是根据一些实施例的发射器垫200的另一横截面视图340(沿图2的线A-A')。如图所示,发射器垫200可以包括设置在导电板204的顶部的一个或多个附加层。在一些实施例中,第一附加层342是将电子设备212与导电板204的外表面分开的介电材料(例如,塑料层、玻璃层等)。因为第一附加层342是介电层,因此它不改变在相应切口处形成的能量累积。然而,由于当包括第一附加层342时,接收器212与天线之间的分开距离(即,图3B的距离“X”)增大了,因此发射器垫200必须补偿第一附加层342的厚度。在一些实施例中,第一附加层342用作“透镜”,这意味着其增大了在切口附近形成的能量累积的集中度(例如,聚焦)。因此,第一附加层342可以提高相对于单元中心的特定位置处的隔离(例如,降低到相邻单元的辐射)。另外,第一附加层342使能量均匀地分布在导电板204的外表面上。结果,相邻的能量累积之间的间隙(即“冷区”)可以被最小化,或者甚至被消除。
另外,在一些实施例中,发射器垫200包括设置在第一附加层342的顶部的第二附加层344。第二附加层344可以是诸如铝或铜之类的导电材料。在一些实施例中,第二附加层344是另一导电板,类似于导电板204。替换地,在一些实施例中,第二附加层344被沉积(例如,印刷、涂覆等)到第一附加层344上。再次地,由于当包括第二附加层344时,接收器212与天线之间的分开距离(即,图3B的距离“X”)增大了,因此发射器垫200必须补偿第二附加层344的厚度。
在一些实施例中,第二附加层344改变在相应切口处形成的一个或多个能量累积的形成。例如,第二附加层344可以增大集中度和/或可以调整在相应切口处形成的能量累积的位置(即,可以偏移位置)。在另一示例中,第二附加层344可以用于合并第一能量累积的一个或多个部分与来自第二能量累积(以及可能的第三能量累积)的一个或多个部分(即,使能量均匀地分布在导电板204的外表面上)。以此方式,相邻的能量累积之间的间隙(即“冷区”)可以被最小化,或者甚至被消除。在一些情况下,第二附加层344进一步提高了上文关于第一附加层344讨论的益处。
图4A至4C示出了根据一些实施例的单元以及在单元的相应切口处形成的能量累积。图4A是单元400(例如,图1的单元110-A)的顶视图。单元400包括导电板402(例如,图2的导电板204),该导电板402具有被限定为穿过导电板402的第一和第二切口404(例如,通道、狭槽等)。另外,单元400包括位于导电板402下方(例如,位于由图2的壳体202限定的内部空腔中)的馈电元件406(例如,图3A的馈电307-A)。尽管馈电元件406被示出为在单元400中居中,但是在一些实施例中,馈电元件406不居中(或者可以围绕第一轴线居中而围绕第二轴线不居中)。将馈电元件406置于不同位置处能够影响能量累积的分布(例如,第一位置可以产生更均匀的分布,并且第二位置可以产生更集中的分布)。
如图所示,第一切口404和第二切口404中的每个切口包括多个部分408(在本文中也称为切口部分)。相应切口的部分可以以多种方式布置。例如,第一切口404-A包括垂直于(例如,正交于)第二部分408-B的第一部分408-A、以及也垂直于第二部分408-B的第三部分408-C。第二切口404-B包括相似的部分(未标示出)。在另一示例中,第一部分408-A可以垂直于第二部分408-B,并且第三部分408-C也可以垂直于第二部分408-B,但是可以向下延伸(而不是如图4A中所示的那样向上延伸)。这些布置仅是示例性的,并且其他布置是可能的。
在一些实施例中,第一切口404-A的形状是第二切口404-B的形状的镜像(例如,马蹄形)。另外,第一切口404-A与第二切口404-B交错或插入。这种布置最小化了第一和第二切口之间的间隙(例如,最小化了第一和第二切口404的相应部分之间的间隙),这导致也最小化了相邻的能量累积之间的间隙。另外,切口404的互补属性(例如,互锁布置)也(i)最小化了单元400的远场增益,并且(ii)降低了对位于其他单元上的其他设备的干扰。例如,来自切口404-A的相应部分的远场电磁场被来自与该相应切口相邻的部分的远场电磁场至少部分地抵消(如上文参考图2所讨论的)。此外,由于第一和第二切口404的互锁布置,进一步最小化了在每个切口之间的电磁辐射的远场增益。
在一些实施例中,第一和第二切口404中的每个切口的总长度至少与由发射器垫发射(例如,由天线元件406发射)的相应RF功率传输信号的波长一样长。这样,至少在一些实施例中,切口404的每个部分的长度小于由发射器垫发射的相应RF功率传输信号的波长。例如,第二切口404-A分别包括第一、第二和第三部分408-A、408-B和408-C,其各自具有小于波长的长度“X”。然而,当从三个部分中的每个部分组合这三个长度“X”时,切口404-A的总长度至少与波长一样长。在一些实施例中,长度“X”是由发射器发射的相应RF功率传输信号的波长的一半(或大约一半)(例如,λ/2)。在一些实施例中,长度“X”是波长的其他百分比。
图4B是根据一些实施例的单元400的顶视图410,其示出了在由馈电元件406传输多个RF功率传输信号时形成的能量累积。如图所示,沿着每个切口的长度形成多个能量累积(例如,能量累积412)。累积的数量对应于相应切口中的部分的数量。例如,第一和第二切口404各自包括三个部分(例如,第一部分408-A、第二部分408-B和第三部分408-C)。这样,第一和第二切口404各自包括三个能量累积。鉴于此,可以取决于相应切口的设计而产生任何数量的能量累积(例如,具有例如10个垂直部分的切口有助于形成10个能量累积)。相应部分的长度决定了能量累积是否在相应部分处形成,并且还决定了从相应部分辐射的电磁场的特性(例如,在能量累积中存在的能量的量)。
图4C是根据一些实施例的在由馈电元件406传输多个RF功率传输信号422期间的单元400的横截面视图420(沿图4B的线C-C'截取)。如图所示,馈电元件406传输多个RF功率传输信号422引起电流沿着位于上方的切口404的周界传导,从而引起在第一和第二切口404处形成多个NF能量累积412-A至412-D。这多个能量累积412-A至412-D在导电板402上方延伸距离“Y”。距离“Y”大于上文参考图3B讨论的分开距离“X”(例如,距离“X”涉及接收器212与导电体204的外表面之间的距离)。因此,这多个能量累积412-A至412-D中的每个累积都能够到达置于导电板402顶部的接收器,从而有助于接收器的无线充电。
在一些实施例中,这多个能量累积412-A至412-D在导电板402的外表面上方延伸约1至5毫米。例如,如果接收器与导电板402的外表面分开2毫米,则这多个能量累积412-A至412-D可以在导电板402的外表面上方延伸2.1至5毫米。在一些实施例中,发射器垫100(图1A)的处理器104修改多个RF功率传输信号422的一个或多个特性以增大(或减小)距离“Y”。另外,可以操纵各种变量以使得在距导电板402各种距离处形成NF能量累积,并且这些变量包括导电板402的厚度、绝缘体414(例如,图3A的绝缘体304)的厚度、切口的宽度、部分的长度、以及天线的类型,可能会增大(或减小)距离“Y”,这取决于将使用包括多个单元的特定发射器垫进行充电的设备的类型。
图5A至5B示出了根据一些实施例的单元和在单元的单个切口处形成的能量累积。图5A是单元500(例如,图1B的单元110-A)的顶视图。单元500包括具有切口504(例如,通道/狭槽)的导电板502(例如,图2的导电板204)。单元500包括位于导电板502下方(例如,位于由图2的壳体202限定的内部空腔中)的馈电元件506(例如,图3A的馈电元件307-A)。尽管馈电元件506被示出为在单元500中居中,但是在一些实施例中,馈电506不居中(或者可以围绕第一轴线而非第二轴线居中)。
在一些实施例中,切口504的总长度至少与由发射器发射(例如,由天线元件506发射)的相应RF功率传输信号的波长一样长。另外,切口504包括多个部分(例如,切口504的每个竖直和水平段)。在一些实施例中,切口504的每个部分的长度小于由发射器垫(例如,图2的发射器垫200)发射的相应RF功率传输信号的波长。在一些实施例中,这多个部分中的每个部分的长度是相同的(例如,λ/2)。替换地,在一些实施例中,这多个部分中的第一组部分具有第一长度,并且这多个部分中的第二组部分具有第二长度,第二长度大于第一长度。在一些实施例中,第一长度是有助于产生能量累积的长度(例如,λ/2),并且第二长度是不助于能量累积的长度(例如,λ)。
图5B是根据一些实施例的单元500的顶视图510,其示出了在由天线元件506传输多个RF功率传输信号之后形成的能量累积。这多个能量累积中的每个累积(例如,能量累积508)沿着切口504的一部分形成。在一些实施例中,切口504的每个相应部分具有在该相应部分处形成的对应的能量累积。替换地,在一些实施例中,切口504的一个或多个部分没有在相应部分处形成的对应的能量累积(例如,当相应部分的长度并不有助于能量累积的产生时)。
图6是示出根据一些实施例的用于以最小的远场增益在近场距离上形成一个或多个RF能量累积的无线功率传输方法的流程图。方法600的操作(例如,步骤)可以由近场充电垫(例如,图1A至1B的发射器垫100;图2的发射器垫200)或由其一个或多个组件(例如,RF功率传输信号生成模块、特性选择模块和/或信标发送模块)来执行。图6中所示的操作中的至少一些对应于存储在计算机存储器或计算机可读存储介质(例如,图1A的发射器垫100的存储器106)中的指令。
方法600包括提供(602)近场天线(例如,图4的单元400;图5的单元500),其包括导电板(例如,图2的导电板204),所述导电板具有(i)相对的第一和第二平坦表面(例如,内表面和外表面)以及(ii)穿过导电板从第一表面延伸到第二表面的一个或多个切口(例如,图4的切口404-A和404-B;图5A的切口504)。近场天线还包括经由绝缘体(例如,图3A的绝缘体304)与导电板的第一表面分开的馈电元件(例如,图3A的馈电元件307)。在一些实施例中,馈电元件至少是贴片天线的组件,其中绝缘体设置在馈电元件与导电板之间。替换地,在一些实施例中,馈电元件是贴片天线的组件,其至少部分地被包封在绝缘体内。在一些实施例中,导电板是该单元特有的板(即,不同且单独的板)。替换地,在一些实施例中,导电板延伸到一个或多个相邻的单元。
在一些实施例中,近场天线还包括将馈电元件与接地板(例如,图3A的接地308)分开的另一绝缘体。替换地,在一些实施例中,绝缘体将馈电元件与接地板分开。
在一些实施例中,导电板是沉积在绝缘体的表面上的导电层(例如,绝缘体是刚性聚合物基板并且导电层沉积在其上)。替换地,在一些实施例中,绝缘体是沉积在导电板的第一表面上的介电层。
在一些实施例中,绝缘体选自包括以下的群组:聚合物、纤维增强聚合物、玻璃和空气。在一些实施例中,绝缘体的厚度大于导电板的厚度,或者反之亦然。
在一些实施例中,一个或多个切口中的第一切口形成第一曲折线图案,并且一个或多个切口中的第二切口形成第二曲折线图案。在一些实施例中,第一和第二曲折线图案是相同的曲折线图案(即,第一曲折线图案的形状是第二曲折线图案的形状的镜像)。例如,参考图4A,第一切口404-A形成第一曲折线图案,并且第二切口404-B形成第二曲折线图案。替换地,在一些实施例中,第一和第二曲折线图案是不同的曲折线图案。在一些实施例中,当线图案包括至少一个方向变化时,该线图案被认为是曲折线图案。在一些实施例中,所述至少一个方向变化是垂直的方向变化。替换地,在一些实施例中,所述至少一个方向变化是其他角度的方向变化。本领域的技术人员将领会的是,图4和图5中的线图案是非限制性示例,并且可以实现其他的曲折线图案。
在一些实施例中,第一曲折线图案相对于第二曲折线图案旋转(例如旋转180度)。换言之,第一曲折线图案的形状可以被设置在第一方向上,并且第二曲折线图案的形状可以被设置在与第一方向相反的第二方向上。例如,如图4A中所示,第一切口404-A(即,第一曲折线图案)与第二切口404-B(即,第二曲折线图案)互锁,因为两个切口被设置在相反的方向上。
方法600还包括使(604)馈电元件将多个RF功率传输信号(例如,图4C的RF功率传输信号422)导向导电板(例如,导向图2的导电板204的内表面)。在一些实施例中,多个RF功率传输信号以选自包括以下的群组的频率进行发射:5.8GHz、2.4GHz和900MHz。
在一些实施例中,在使馈电元件将多个RF功率传输信号导向导电板之前,发射器垫200检测导电板上的接收器(例如,用户将容纳接收器212的电子设备210置于导电板204的外表面上,从而将接收器放置在图2的无线充电区206-A的阈值距离内)。在一些实施例中,响应于确定了接收器被置于该外表面的阈值距离内,馈电元件从功率放大器接收一个或多个RF功率传输信号。在一些实施例中,阈值距离是预定的阈值距离(例如,预定的阈值距离被存储在图1A的发射器垫100的存储器106中)。
在一些实施例中,发射器垫200使用一个或多个传感器(例如,图1A的发射器传感器114)来检测接收器。替换地或另外,在一些实施例中,发射器垫200通过从接收器(或与接收器)接收(或交换)一个或多个通信信号(例如,经由图1A的一个或多个通信组件112接收一个或多个通信信号)来检测接收器。例如,与由连接到近场天线的处理器104(图1A)接收到的一个或多个通信信号相关联的信号强度水平可以指示接收器在外表面的阈值距离内。上面参考图2和图3A至3B更详细地讨论了检测接收器。
方法600还包括在导电板处接收(606)来自馈电元件的多个RF功率传输信号。在一些实施例中,从馈电元件接收多个RF功率传输信号导致电流沿着由一个或多个切口限定的导电板的边缘/周界流动(例如,图2中的电流流动209)。
方法600还包括穿过一个或多个切口来辐射(608)多个RF功率传输信号中的至少一些,以使得来自多个RF功率传输信号的RF能量在导电板的近场距离内累积,以在一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区(例如,图4C的能量积累412-A至412-D)。至少部分地基于(i)限定一个或多个切口中的每个切口的一组尺寸和(ii)所述一个或多个切口的布置,来限定在一个或多个切口中的每个切口处的至少两个不同的累积RF能量区。例如,限定一个或多个切口中的每个切口的一组尺寸可以包括:导电板的厚度、切口的宽度、切口的形状、切口的长度以及切口的部分(例如,段)的数目。一个或多个切口的布置最小化了相邻的累积RF能量区之间的间隙。另外,取决于布置,一个或多个相邻的累积RF能量区基本上可以合并,从而消除累积RF能量区之间的间隙。
在一些实施例中,所述至少两个不同的区覆盖导电板的第二表面的至少80%的表面面积。替换地,在一些实施例中,所述至少两个不同的区覆盖导电板的第二表面的至少90%的表面面积。对表面面积的覆盖程度至少部分地基于(i)限定一个或多个切口中的每个切口的该组尺寸和(ii)一个或多个切口的布置(例如,在给定单元中的布置,以及还有在相邻单元之间的切口布置)。
在一些实施例中,一个或多个切口中的相应切口具有相应的长度,所述相应的长度至少与多个RF功率传输信号中的相应的RF功率传输信号的波长一样长。如上文参考图4和图5所讨论的,这种配置促进了沿着相应切口的长度形成至少两个不同的累积RF能量区。
此外,在一些实施例中,相应的切口至少包括在第一方向上限定的第一部分(例如,图4A的第一部分408-A)和在第二方向上限定的第二部分(例如,图4A的第二部分408-B),第二方向与第一方向正交。此外,在第一部分处产生所述至少两个不同的累积RF能量区中的第一个,并在第二部分处产生所述至少两个不同的累积RF能量区中的第二个。
在一些实施例中,相应的切口还包括在第一方向或其他方向上限定的第三部分(例如,图4A的第三部分408-C)。在一些实施例中,第三部分是第一部分的镜像,使得该相应的切口形成马蹄形。替换地,在一些实施例中,第三部分延伸离开第一和第二部分,使得该相应的切口形成“S”形。在一些实施例中,在第三部分处产生第三个不同的累积RF能量区。相应的切口还可以包括在各个方向上限定的附加部分。
在一些实施例中,所述至少两个不同的累积RF能量区在导电板的第二表面上方延伸不超过5毫米(或某一更大(或更小)的量)。这样,控制近场充电垫的远场增益,并且大幅降低了对位于近场充电垫附近的其他设备(或其他金属对象)的潜在干扰,并且在某些情况下,可以完全消除所述干扰。
在一些实施例中,近场天线是第一近场天线(例如,与图2的无线充电区206-A相关联的单元),并且是近场充电垫(例如,图2的发射器垫200)的一部分,近场充电垫至少还包括第二近场天线(例如,与图2的无线充电区206-B相关联的单元),该第二近场天线位于近场充电垫内与第一近场天线相邻。此外,与第二近场天线相关联的相应切口相对于与第一近场天线相关联的一个或多个切口旋转。例如,第二近场天线(例如,与图2的无线充电区206-B相关联的单元)可以相对于第一近场天线(例如,与图2的无线充电区206-A相关联的单元)旋转(例如90度),或者反之亦然。旋转相邻的单元并且进而旋转其中限定的切口有助于进一步提高对远场增益的控制,并确保整体上大幅降低针对近场充电垫的远场增益。另外,还最小化了相邻的能量累积(例如,单元到单元)之间的间隙(例如,消除了近场充电垫上的“冷区”)。
图7是示出根据一些实施例的制造近场天线的方法的流程图。近场天线可以是单个单元(例如,图1的单元110-A;图4的单元400等)的示例。
方法700包括选择(702)用于一个或多个切口(例如,图4A的切口404-A和404-B)的一组尺寸,所述一个或多个切口要被限定为穿过近场天线的导电板(例如,图4A的导电板402),该导电板具有相对的第一(例如,内)和第二(例如,外)平坦表面。上文更详细地讨论了针对这一个或多个切口的尺寸。
方法700还包括以预定义的布置(例如,以如图4A中所示的互锁布置)形成(704)穿过导电板的第一表面和第二表面的一个或多个切口,所述一个或多个切口中的每个切口具有该组尺寸。在一些实施例中,形成一个或多个切口包括铣削(例如,CNC铣削)一个或多个切口、激光蚀刻一个或多个切口、化学蚀刻一个或多个切口或本领域技术人员已知的其他方法。应当注意,切口本身可以以“预定义的布置”来形成,例如,切口504以预定义的布置来形成(图5)。
方法700还包括将绝缘体(例如,图3A的绝缘体304)耦合(706)到导电板的第一表面(例如,内表面)。绝缘体可以以机械和/或化学方式(例如,使用粘合剂)紧固到导电板的第一表面。在一些实施例中,绝缘体支撑导电板的一个或多个区域。
在一些实施例中,在穿过导电板形成一个或多个切口之前,将绝缘体耦合到导电板的第一表面(例如,内表面)(或者在形成一个或多个切口之前将绝缘体沉积在导电板的第一表面上)。这样,在这些实施例中,形成(704)穿过导电板的一个或多个切口包括例如铣削穿过导电板的外表面至耦合到导电板的内表面的绝缘体的表面。
方法700还包括将馈电元件耦合(708)到绝缘体。在一些实施例中,馈电元件以机械和/或化学方式(例如,使用粘合剂)紧固到绝缘体。替换地或另外,在一些实施例中,馈电元件至少部分地嵌入绝缘体内。应当注意,在绝缘体是空气的那些实施例中,可以跳过步骤708。在这些实施例中,馈电元件可以耦合到近场天线的其他结构(例如,图2的壳体202的一部分)。
在一些实施例中,绝缘体是第一绝缘体,并且该方法还包括将第二绝缘体耦合到馈电元件。例如,第一绝缘体可以耦合到馈电元件的顶部,并且第二绝缘体可以耦合到馈电元件的底部。以此方式,在第一绝缘体、馈电元件和第二绝缘体之间形成夹层结构。馈电元件可以以机械和/或化学方式(例如,使用粘合剂)紧固到第二绝缘体。替换地或另外,在一些实施例中,馈电元件至少部分地嵌入第二绝缘体内。
如上所述,馈电元件被配置成将多个RF功率传输信号导向导电板,并且多个RF功率传输信号中的至少一些RF功率传输信号辐射穿过一个或多个切口并在导电表面的近场距离内累积,以在一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区。至少部分地基于(i)限定一个或多个切口中的每个切口的一组尺寸和(ii)这一个或多个切口的布置,来限定在一个或多个切口中的每个切口处的至少两个不同的累积RF能量区。上面参考图2至5B更详细地讨论了形成能量累积。
在一些实施例中,可以重复方法700的步骤,使得制造附加的近场天线。另外,在一些实施例中,方法700还包括形成近场天线的阵列(例如,如图1B所示的单元天线110-A至110-N的阵列)。此外,在一些实施例中,导电板是与近场天线阵列中的每个近场天线相关联的连续的板。替换地,在一些实施例中,每个近场天线包括不同的导电板。
近场天线阵列可以经由总线(例如,图1A的通信总线108)互连,并且可以进一步连接到一个或多个处理器(例如,图1A的发射器垫100的处理器104)。
在一些实施例中,近场天线阵列设置在壳体(例如,图2的壳体202)中。以此方式,大幅降低甚至消除了RF功率传输信号(例如,经由侧壁)的泄漏。
图8示出了根据一些实施例的形成在发射器垫上的各种功率分布(例如,能量累积)。特别地,图8示出了在具有四个单元(例如,图4A的单元400、图5A的单元500)的发射器垫(例如,图1A至1B的发射器垫100)上的能量累积802的集中度,并且顺序地激活每个单元(例如,被激活意味着单元的馈电元件开始发射RF功率传输信号)。如图所示,能量累积802基本上覆盖了单元801的表面区域。另外,单元801的表面区域具有最小的冷区804。这是得自于如上所述的限定一个或多个切口中的每个切口的一组尺寸以及一个或多个切口的布置。
此外,能量累积802被基本上限于当前激活的单元(即,在单元801处产生的电磁辐射基本上不辐射至相邻的单元)。来自受控的远场增益和来自彼此基本隔离的单元的结果被最小化。因此,邻近单元上的对象不受当前激活的单元801所发射的辐射的影响,在特定单元处的能量累积也不受可能置于特定单元附近的金属对象的影响。
图9是示出与在所有方向上均匀地辐射的各向同性天线的辐射图案相比的包括一个或多个切口的单元天线的示例辐射图案的图示。特别地,图9示出了针对单元天线的辐射图案在近场范围(例如1至5毫米)内在单元天线的表面上方延伸,并且最小化并控制了远场增益以避免对在(包括多个单元天线110的)发射器垫100附近操作的其他电子设备(或所放置的其他金属对象)的任何潜在干扰。
本文中的本发明的描述中使用的术语仅仅是出于描述特定实施例的目的,而非意图限制本发明。如本发明的描述和所附权利要求中使用的,单数形式“一”、“一个”和“该”意图也包括复数形式,除非上下文清楚地另外指示。还将理解的是,如本文中使用的术语“和/或”指代并涵盖相关联的所列项目中的一个或多个的任何和所有可能组合。还将理解的是,术语“包括”和/或“包含”当在本说明书中使用时指定所陈述的特征、步骤、操作、元件和/或组件的存在,但不排除一个或多个其他特征、步骤、操作、元件、组件和/或其群组的存在或添加。
还将理解的是,尽管本文中可能使用了术语“第一”、“第二”等来描述各种元件,但是这些元件不应受这些术语的限制。这些术语仅用于区分一个元件和另一元件。例如,第一区域可以称为第二区域,并且类似地,第二区域可以称为第一区域,而不会改变描述的含义,只要“第一区域”的所有出现都被一致地重命名并且“第二区域”的所有出现都被一致地重命名即可。第一区域和第二区域都是区域,但是它们不是同一区域。
为了解释的目的,已参考特定的实施例描述了前述描述。然而,上面的示例性讨论不意图是穷举的或者将本发明限于所公开的确切形式。鉴于上面的教导的许多修改和变化是可能的。所述实施例被选取和描述以便最好地解释本发明的原理及其实际应用,以由此使得本领域其他技术人员能够最好地利用本发明和具有如适合于所设想的特定使用的各种修改的各种实施例。
Claims (20)
1.一种制造用于发射射频RF功率传输信号的近场天线的方法,包括:
选择针对一个或多个切口的一组尺寸,所述一个或多个切口要被限定为穿过所述近场天线的导电板,所述导电板具有相对的第一平坦表面和第二平坦表面;
以预定义的布置形成穿过所述导电板的所述第一平坦表面和所述第二平坦表面的所述一个或多个切口,所述一个或多个切口中的每个切口具有所述一组尺寸;
将绝缘体耦合到所述导电板的所述第一平坦表面;以及
将馈电元件耦合到所述绝缘体,
其中,形成所述一个或多个切口使得当多个RF功率传输信号由所述馈电元件导向到所述一个或多个切口时,在所述一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区域,以及
其中至少部分地基于以下来限定在所述一个或多个切口中的每个切口处的所述至少两个不同的累积RF能量区域:(i)限定所述一个或多个切口中的每个切口的所述一组尺寸,以及(ii)所述一个或多个切口的所述预定义的布置。
2.根据权利要求1所述的制造所述近场天线的方法,其中所述一个或多个切口中的相应切口的所述一组尺寸包括至少与由所述近场天线发射的相应RF功率传输信号的波长一样长的长度。
3.根据权利要求2所述的制造所述近场天线的方法,其中至少与由所述近场天线发射的相应RF功率传输信号的波长一样长的所述长度包括多个部分,所述多个部分中的每个部分的相应长度小于由所述近场天线发射的所述相应RF功率传输信号的所述波长。
4.根据权利要求3所述的制造所述近场天线的方法,其中所述多个部分中的每个部分的相应长度相同。
5.根据权利要求3所述的制造所述近场天线的方法,其中所述多个部分中的至少一个部分的相应长度是不同的。
6.根据权利要求1所述的制造所述近场天线的方法,其中形成所述一个或多个切口包括铣削、激光蚀刻和/或化学蚀刻以所述预定义的布置穿过所述导电板的所述第一平坦表面和所述第二平坦表面的所述一个或多个切口。
7.根据权利要求1所述的制造所述近场天线的方法,其中所述绝缘体能够以机械和/或化学方式紧固到所述导电板的所述第一平坦表面。
8.根据权利要求1所述的制造所述近场天线的方法,其中在形成穿过所述导电板的所述一个或多个切口之前,将所述绝缘体耦合到所述导电板的所述第一平坦表面。
9.根据权利要求8所述的制造所述近场天线的方法,其中所述一个或多个切口形成为穿过所述导电板的所述第一平坦表面和所述第二平坦表面到耦合到所述导电板的所述第一平坦表面的所述绝缘体。
10.根据权利要求1所述的制造所述近场天线的方法,其中所述馈电元件至少部分地嵌入所述绝缘体内。
11.根据权利要求1所述的制造所述近场天线的方法,其中所述馈电元件耦合到所述近场天线的壳体的一部分。
12.根据权利要求1所述的制造所述近场天线的方法,其中耦合到所述导电板的所述第一平坦表面的所述绝缘体包括第一绝缘体和第二绝缘体,所述第一绝缘体耦合到所述导电板的所述第一平坦表面并且所述第二绝缘体耦合到所述馈电元件。
13.根据权利要求12所述的制造所述近场天线的方法,其中所述馈电元件耦合到所述第一绝缘体和所述第二绝缘体的一部分。
14.根据权利要求1-13中任一项所述的制造所述近场天线的方法,其中所述绝缘体选自由聚合物、纤维增强聚合物、玻璃和空气组成的组。
15.根据权利要求1-13中任一项所述的制造所述近场天线的方法,其中所述预定义的布置包括互锁所述一个或多个切口中的第一切口和第二切口。
16.根据权利要求1-13中任一项所述的制造所述近场天线的方法,其中:
所述一个或多个切口是单个切口,所述单个切口包括多个部分;以及
所述预定义的布置包括将所述多个部分的至少第一部分耦合到所述多个部分的第二部分。
17.一种无线功率发射的系统,所述系统包括:
近场天线,所述近场天线被配置为发射射频RF功率传输信号,所述近场天线包括:
导电板,所述导电板具有相对的第一平坦表面和第二平坦表面以及穿过所述导电板从所述第一平坦表面延伸到所述第二平坦表面的一个或多个切口;
绝缘体;以及
馈电元件,所述馈电元件通过所述绝缘体与所述导电板的所述第一平坦表面分开;以及
控制器,所述控制器与所述近场天线通信并且被配置为:
使所述馈电元件将多个RF功率传输信号导向所述导电板,以使得:
所述多个RF功率传输信号中的至少一些RF功率传输信号辐射穿过所述一个或多个切口并在所述导电板的近场距离内累积,以在所述一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区,其中至少部分地基于以下来限定在所述一个或多个切口中的每个切口处的所述至少两个不同的累积RF能量区:(i)限定所述一个或多个切口中的每个切口的一组尺寸,以及(ii)所述一个或多个切口的布置。
18.根据权利要求17所述的无线功率发射的系统,其中与所述近场天线通信的所述控制器被配置为:
在使所述馈电元件将所述多个RF功率传输信号导向所述导电板之前检测所述导电板上的接收器。
19.根据权利要求18所述的无线功率发射的系统,其中与所述近场天线通信的所述控制器被配置为:
在使所述馈电元件将所述多个RF功率传输信号导向所述导电板之前确定接收器被放置在距所述第二平坦表面的预定距离内。
20.一种用于无线功率发射的方法,所述方法包括:
提供近场天线,所述近场天线被配置为发射射频RF功率传输信号,所述近场天线包括:
导电板,所述导电板具有相对的第一平坦表面和第二平坦表面以及穿过所述导电板从所述第一平坦表面延伸到所述第二平坦表面的一个或多个切口;
绝缘体;以及
馈电元件,所述馈电元件通过所述绝缘体与所述导电板的所述第一平坦表面分开;以及
使所述馈电元件将多个RF功率传输信号导向所述导电板,以使得:
所述多个RF功率传输信号中的至少一些RF功率传输信号辐射穿过所述一个或多个切口并在所述导电板的近场距离内累积,以在所述一个或多个切口中的每个切口处产生至少两个不同的累积RF能量区,其中至少部分地基于以下来限定在所述一个或多个切口中的每个切口处的所述至少两个不同的累积RF能量区:(i)限定所述一个或多个切口中的每个切口的一组尺寸,以及(ii)所述一个或多个切口的布置。
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