CN113165121B - 半导体装置的制造方法以及层叠体 - Google Patents
半导体装置的制造方法以及层叠体 Download PDFInfo
- Publication number
- CN113165121B CN113165121B CN202080006808.4A CN202080006808A CN113165121B CN 113165121 B CN113165121 B CN 113165121B CN 202080006808 A CN202080006808 A CN 202080006808A CN 113165121 B CN113165121 B CN 113165121B
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- wafer
- adhesive sheet
- semiconductor device
- chips
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000853 adhesive Substances 0.000 claims abstract description 107
- 230000001070 adhesive effect Effects 0.000 claims abstract description 107
- 239000011159 matrix material Substances 0.000 claims abstract description 5
- 238000012546 transfer Methods 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 165
- 239000010410 layer Substances 0.000 description 73
- 239000010408 film Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000005336 cracking Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- -1 vinyl halide Chemical class 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Dicing (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-058591 | 2019-03-26 | ||
JP2019058591 | 2019-03-26 | ||
PCT/JP2020/010413 WO2020195808A1 (ja) | 2019-03-26 | 2020-03-11 | 半導体装置の製造方法及び積層体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113165121A CN113165121A (zh) | 2021-07-23 |
CN113165121B true CN113165121B (zh) | 2023-12-05 |
Family
ID=72608689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080006808.4A Active CN113165121B (zh) | 2019-03-26 | 2020-03-11 | 半导体装置的制造方法以及层叠体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2020195808A1 (de) |
KR (1) | KR20210142584A (de) |
CN (1) | CN113165121B (de) |
TW (1) | TW202101551A (de) |
WO (1) | WO2020195808A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7366435B2 (ja) * | 2021-01-15 | 2023-10-23 | 古河電気工業株式会社 | ウェハ研削用粘着テープおよびウェハの加工方法 |
Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028014A (ja) * | 1988-06-28 | 1990-01-11 | Toshiba Corp | 半導体基板のブレーキング装置 |
US5287072A (en) * | 1991-01-10 | 1994-02-15 | Fujitsu Limited | Semiconductor device for improving high-frequency characteristics and avoiding chip cracking |
EP0860873A1 (de) * | 1997-02-24 | 1998-08-26 | LINTEC Corporation | Klebefolie zum Einsetzen von Wafern und Herstellungsverfahren von elektronischen Bauteilen |
US5939777A (en) * | 1996-12-06 | 1999-08-17 | Texas Instruments Incorporated | High aspect ratio integrated circuit chip and method for producing the same |
JP2000061785A (ja) * | 1998-08-24 | 2000-02-29 | Nitto Denko Corp | 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法 |
JP2004165570A (ja) * | 2002-11-15 | 2004-06-10 | Nitto Denko Corp | 半導体ウエハからの保護テープ除去方法およびその装置 |
CN1649102A (zh) * | 2003-12-15 | 2005-08-03 | 日东电工株式会社 | 保护带贴附方法和其装置以及保护带分离方法和其装置 |
JP2005317883A (ja) * | 2004-05-26 | 2005-11-10 | Lintec Corp | ウエハ処理装置 |
JP2006100413A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Seimitsu Co Ltd | フィルム貼付方法およびフィルム貼付装置 |
CN101026126A (zh) * | 2006-02-14 | 2007-08-29 | 株式会社迪斯科 | 半导体芯片制造方法 |
CN101297393A (zh) * | 2005-11-24 | 2008-10-29 | 株式会社瑞萨科技 | 半导体器件的制造方法 |
JP2009176977A (ja) * | 2008-01-25 | 2009-08-06 | Seiko Epson Corp | 半導体チップ及びその製造方法 |
CN101515565A (zh) * | 2008-02-20 | 2009-08-26 | 株式会社迪思科 | 半导体芯片的制造方法 |
CN101657890A (zh) * | 2007-04-17 | 2010-02-24 | 琳得科株式会社 | 带粘接剂芯片的制造方法 |
JP2011009763A (ja) * | 2010-08-09 | 2011-01-13 | Furukawa Electric Co Ltd:The | 半導体チップの製造方法 |
CN104009001A (zh) * | 2013-02-22 | 2014-08-27 | 株式会社迪思科 | 层叠晶片的加工方法和粘合片 |
JP2017050373A (ja) * | 2015-09-01 | 2017-03-09 | リンテック株式会社 | シート貼付装置およびシート貼付方法 |
CN107591361A (zh) * | 2016-07-06 | 2018-01-16 | 株式会社迪思科 | 半导体器件芯片的制造方法 |
CN107615453A (zh) * | 2015-05-25 | 2018-01-19 | 琳得科株式会社 | 半导体装置的制造方法 |
CN107863293A (zh) * | 2016-09-21 | 2018-03-30 | 株式会社迪思科 | 晶片的加工方法 |
JP2018133496A (ja) * | 2017-02-16 | 2018-08-23 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043940B2 (en) * | 2008-06-02 | 2011-10-25 | Renesas Electronics Corporation | Method for manufacturing semiconductor chip and semiconductor device |
-
2020
- 2020-03-11 CN CN202080006808.4A patent/CN113165121B/zh active Active
- 2020-03-11 WO PCT/JP2020/010413 patent/WO2020195808A1/ja active Application Filing
- 2020-03-11 JP JP2021508991A patent/JPWO2020195808A1/ja active Pending
- 2020-03-11 KR KR1020217014295A patent/KR20210142584A/ko unknown
- 2020-03-18 TW TW109108956A patent/TW202101551A/zh unknown
Patent Citations (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028014A (ja) * | 1988-06-28 | 1990-01-11 | Toshiba Corp | 半導体基板のブレーキング装置 |
US5287072A (en) * | 1991-01-10 | 1994-02-15 | Fujitsu Limited | Semiconductor device for improving high-frequency characteristics and avoiding chip cracking |
US5939777A (en) * | 1996-12-06 | 1999-08-17 | Texas Instruments Incorporated | High aspect ratio integrated circuit chip and method for producing the same |
EP0860873A1 (de) * | 1997-02-24 | 1998-08-26 | LINTEC Corporation | Klebefolie zum Einsetzen von Wafern und Herstellungsverfahren von elektronischen Bauteilen |
JP2000061785A (ja) * | 1998-08-24 | 2000-02-29 | Nitto Denko Corp | 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法 |
JP2004165570A (ja) * | 2002-11-15 | 2004-06-10 | Nitto Denko Corp | 半導体ウエハからの保護テープ除去方法およびその装置 |
CN1649102A (zh) * | 2003-12-15 | 2005-08-03 | 日东电工株式会社 | 保护带贴附方法和其装置以及保护带分离方法和其装置 |
JP2005317883A (ja) * | 2004-05-26 | 2005-11-10 | Lintec Corp | ウエハ処理装置 |
JP2006100413A (ja) * | 2004-09-28 | 2006-04-13 | Tokyo Seimitsu Co Ltd | フィルム貼付方法およびフィルム貼付装置 |
CN101297393A (zh) * | 2005-11-24 | 2008-10-29 | 株式会社瑞萨科技 | 半导体器件的制造方法 |
CN101026126A (zh) * | 2006-02-14 | 2007-08-29 | 株式会社迪斯科 | 半导体芯片制造方法 |
CN101657890A (zh) * | 2007-04-17 | 2010-02-24 | 琳得科株式会社 | 带粘接剂芯片的制造方法 |
JP2009176977A (ja) * | 2008-01-25 | 2009-08-06 | Seiko Epson Corp | 半導体チップ及びその製造方法 |
CN101515565A (zh) * | 2008-02-20 | 2009-08-26 | 株式会社迪思科 | 半导体芯片的制造方法 |
JP2011009763A (ja) * | 2010-08-09 | 2011-01-13 | Furukawa Electric Co Ltd:The | 半導体チップの製造方法 |
CN104009001A (zh) * | 2013-02-22 | 2014-08-27 | 株式会社迪思科 | 层叠晶片的加工方法和粘合片 |
CN107615453A (zh) * | 2015-05-25 | 2018-01-19 | 琳得科株式会社 | 半导体装置的制造方法 |
JP2017050373A (ja) * | 2015-09-01 | 2017-03-09 | リンテック株式会社 | シート貼付装置およびシート貼付方法 |
CN107591361A (zh) * | 2016-07-06 | 2018-01-16 | 株式会社迪思科 | 半导体器件芯片的制造方法 |
CN107863293A (zh) * | 2016-09-21 | 2018-03-30 | 株式会社迪思科 | 晶片的加工方法 |
JP2018133496A (ja) * | 2017-02-16 | 2018-08-23 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202101551A (zh) | 2021-01-01 |
JPWO2020195808A1 (de) | 2020-10-01 |
WO2020195808A1 (ja) | 2020-10-01 |
CN113165121A (zh) | 2021-07-23 |
KR20210142584A (ko) | 2021-11-25 |
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