CN113165121B - 半导体装置的制造方法以及层叠体 - Google Patents

半导体装置的制造方法以及层叠体 Download PDF

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Publication number
CN113165121B
CN113165121B CN202080006808.4A CN202080006808A CN113165121B CN 113165121 B CN113165121 B CN 113165121B CN 202080006808 A CN202080006808 A CN 202080006808A CN 113165121 B CN113165121 B CN 113165121B
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China
Prior art keywords
wafer
adhesive sheet
semiconductor device
chips
manufacturing
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CN202080006808.4A
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English (en)
Chinese (zh)
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CN113165121A (zh
Inventor
文田祐介
田久真也
爱泽和人
长谷川裕也
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Lintec Corp
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Lintec Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
CN202080006808.4A 2019-03-26 2020-03-11 半导体装置的制造方法以及层叠体 Active CN113165121B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-058591 2019-03-26
JP2019058591 2019-03-26
PCT/JP2020/010413 WO2020195808A1 (ja) 2019-03-26 2020-03-11 半導体装置の製造方法及び積層体

Publications (2)

Publication Number Publication Date
CN113165121A CN113165121A (zh) 2021-07-23
CN113165121B true CN113165121B (zh) 2023-12-05

Family

ID=72608689

Family Applications (1)

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CN202080006808.4A Active CN113165121B (zh) 2019-03-26 2020-03-11 半导体装置的制造方法以及层叠体

Country Status (5)

Country Link
JP (1) JPWO2020195808A1 (de)
KR (1) KR20210142584A (de)
CN (1) CN113165121B (de)
TW (1) TW202101551A (de)
WO (1) WO2020195808A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7366435B2 (ja) * 2021-01-15 2023-10-23 古河電気工業株式会社 ウェハ研削用粘着テープおよびウェハの加工方法

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028014A (ja) * 1988-06-28 1990-01-11 Toshiba Corp 半導体基板のブレーキング装置
US5287072A (en) * 1991-01-10 1994-02-15 Fujitsu Limited Semiconductor device for improving high-frequency characteristics and avoiding chip cracking
EP0860873A1 (de) * 1997-02-24 1998-08-26 LINTEC Corporation Klebefolie zum Einsetzen von Wafern und Herstellungsverfahren von elektronischen Bauteilen
US5939777A (en) * 1996-12-06 1999-08-17 Texas Instruments Incorporated High aspect ratio integrated circuit chip and method for producing the same
JP2000061785A (ja) * 1998-08-24 2000-02-29 Nitto Denko Corp 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法
JP2004165570A (ja) * 2002-11-15 2004-06-10 Nitto Denko Corp 半導体ウエハからの保護テープ除去方法およびその装置
CN1649102A (zh) * 2003-12-15 2005-08-03 日东电工株式会社 保护带贴附方法和其装置以及保护带分离方法和其装置
JP2005317883A (ja) * 2004-05-26 2005-11-10 Lintec Corp ウエハ処理装置
JP2006100413A (ja) * 2004-09-28 2006-04-13 Tokyo Seimitsu Co Ltd フィルム貼付方法およびフィルム貼付装置
CN101026126A (zh) * 2006-02-14 2007-08-29 株式会社迪斯科 半导体芯片制造方法
CN101297393A (zh) * 2005-11-24 2008-10-29 株式会社瑞萨科技 半导体器件的制造方法
JP2009176977A (ja) * 2008-01-25 2009-08-06 Seiko Epson Corp 半導体チップ及びその製造方法
CN101515565A (zh) * 2008-02-20 2009-08-26 株式会社迪思科 半导体芯片的制造方法
CN101657890A (zh) * 2007-04-17 2010-02-24 琳得科株式会社 带粘接剂芯片的制造方法
JP2011009763A (ja) * 2010-08-09 2011-01-13 Furukawa Electric Co Ltd:The 半導体チップの製造方法
CN104009001A (zh) * 2013-02-22 2014-08-27 株式会社迪思科 层叠晶片的加工方法和粘合片
JP2017050373A (ja) * 2015-09-01 2017-03-09 リンテック株式会社 シート貼付装置およびシート貼付方法
CN107591361A (zh) * 2016-07-06 2018-01-16 株式会社迪思科 半导体器件芯片的制造方法
CN107615453A (zh) * 2015-05-25 2018-01-19 琳得科株式会社 半导体装置的制造方法
CN107863293A (zh) * 2016-09-21 2018-03-30 株式会社迪思科 晶片的加工方法
JP2018133496A (ja) * 2017-02-16 2018-08-23 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043940B2 (en) * 2008-06-02 2011-10-25 Renesas Electronics Corporation Method for manufacturing semiconductor chip and semiconductor device

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028014A (ja) * 1988-06-28 1990-01-11 Toshiba Corp 半導体基板のブレーキング装置
US5287072A (en) * 1991-01-10 1994-02-15 Fujitsu Limited Semiconductor device for improving high-frequency characteristics and avoiding chip cracking
US5939777A (en) * 1996-12-06 1999-08-17 Texas Instruments Incorporated High aspect ratio integrated circuit chip and method for producing the same
EP0860873A1 (de) * 1997-02-24 1998-08-26 LINTEC Corporation Klebefolie zum Einsetzen von Wafern und Herstellungsverfahren von elektronischen Bauteilen
JP2000061785A (ja) * 1998-08-24 2000-02-29 Nitto Denko Corp 保護シート貼付半導体ウエハ及び半導体ウエハの研削方法
JP2004165570A (ja) * 2002-11-15 2004-06-10 Nitto Denko Corp 半導体ウエハからの保護テープ除去方法およびその装置
CN1649102A (zh) * 2003-12-15 2005-08-03 日东电工株式会社 保护带贴附方法和其装置以及保护带分离方法和其装置
JP2005317883A (ja) * 2004-05-26 2005-11-10 Lintec Corp ウエハ処理装置
JP2006100413A (ja) * 2004-09-28 2006-04-13 Tokyo Seimitsu Co Ltd フィルム貼付方法およびフィルム貼付装置
CN101297393A (zh) * 2005-11-24 2008-10-29 株式会社瑞萨科技 半导体器件的制造方法
CN101026126A (zh) * 2006-02-14 2007-08-29 株式会社迪斯科 半导体芯片制造方法
CN101657890A (zh) * 2007-04-17 2010-02-24 琳得科株式会社 带粘接剂芯片的制造方法
JP2009176977A (ja) * 2008-01-25 2009-08-06 Seiko Epson Corp 半導体チップ及びその製造方法
CN101515565A (zh) * 2008-02-20 2009-08-26 株式会社迪思科 半导体芯片的制造方法
JP2011009763A (ja) * 2010-08-09 2011-01-13 Furukawa Electric Co Ltd:The 半導体チップの製造方法
CN104009001A (zh) * 2013-02-22 2014-08-27 株式会社迪思科 层叠晶片的加工方法和粘合片
CN107615453A (zh) * 2015-05-25 2018-01-19 琳得科株式会社 半导体装置的制造方法
JP2017050373A (ja) * 2015-09-01 2017-03-09 リンテック株式会社 シート貼付装置およびシート貼付方法
CN107591361A (zh) * 2016-07-06 2018-01-16 株式会社迪思科 半导体器件芯片的制造方法
CN107863293A (zh) * 2016-09-21 2018-03-30 株式会社迪思科 晶片的加工方法
JP2018133496A (ja) * 2017-02-16 2018-08-23 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

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Publication number Publication date
TW202101551A (zh) 2021-01-01
JPWO2020195808A1 (de) 2020-10-01
WO2020195808A1 (ja) 2020-10-01
CN113165121A (zh) 2021-07-23
KR20210142584A (ko) 2021-11-25

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