CN112310191B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN112310191B
CN112310191B CN202010730923.8A CN202010730923A CN112310191B CN 112310191 B CN112310191 B CN 112310191B CN 202010730923 A CN202010730923 A CN 202010730923A CN 112310191 B CN112310191 B CN 112310191B
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CN
China
Prior art keywords
semiconductor region
semiconductor
region
semiconductor device
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010730923.8A
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English (en)
Chinese (zh)
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CN112310191A (zh
Inventor
冈本隼人
陈则
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN112310191A publication Critical patent/CN112310191A/zh
Application granted granted Critical
Publication of CN112310191B publication Critical patent/CN112310191B/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202010730923.8A 2019-08-01 2020-07-27 半导体装置 Active CN112310191B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-142130 2019-08-01
JP2019142130A JP7257912B2 (ja) 2019-08-01 2019-08-01 半導体装置

Publications (2)

Publication Number Publication Date
CN112310191A CN112310191A (zh) 2021-02-02
CN112310191B true CN112310191B (zh) 2024-05-07

Family

ID=74165591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010730923.8A Active CN112310191B (zh) 2019-08-01 2020-07-27 半导体装置

Country Status (4)

Country Link
US (1) US11444156B2 (enExample)
JP (1) JP7257912B2 (enExample)
CN (1) CN112310191B (enExample)
DE (1) DE102020118483A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6752259B2 (ja) * 2018-09-19 2020-09-09 本田技研工業株式会社 車両

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316480A (ja) * 1995-03-15 1996-11-29 Toshiba Corp 高耐圧半導体素子
JP2012151143A (ja) * 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
CN103811561A (zh) * 2012-11-06 2014-05-21 株式会社东芝 半导体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JP4017258B2 (ja) 1998-07-29 2007-12-05 三菱電機株式会社 半導体装置
JP2007324428A (ja) 2006-06-02 2007-12-13 Toyota Motor Corp 半導体装置
JP5961865B2 (ja) * 2010-09-15 2016-08-02 ローム株式会社 半導体素子
CN104969359B (zh) 2013-03-21 2017-10-17 富士电机株式会社 半导体装置
JP6296535B2 (ja) * 2013-12-09 2018-03-20 ローム株式会社 ダイオードおよびそれを含む信号出力回路
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
WO2019186853A1 (ja) * 2018-03-29 2019-10-03 新電元工業株式会社 ワイドギャップ半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316480A (ja) * 1995-03-15 1996-11-29 Toshiba Corp 高耐圧半導体素子
JP2012151143A (ja) * 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
CN103811561A (zh) * 2012-11-06 2014-05-21 株式会社东芝 半导体装置

Also Published As

Publication number Publication date
US11444156B2 (en) 2022-09-13
DE102020118483A1 (de) 2021-02-04
CN112310191A (zh) 2021-02-02
JP2021027092A (ja) 2021-02-22
JP7257912B2 (ja) 2023-04-14
US20210036107A1 (en) 2021-02-04

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