JP7257912B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7257912B2
JP7257912B2 JP2019142130A JP2019142130A JP7257912B2 JP 7257912 B2 JP7257912 B2 JP 7257912B2 JP 2019142130 A JP2019142130 A JP 2019142130A JP 2019142130 A JP2019142130 A JP 2019142130A JP 7257912 B2 JP7257912 B2 JP 7257912B2
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Japan
Prior art keywords
semiconductor region
semiconductor
region
semiconductor device
regions
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JP2019142130A
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English (en)
Japanese (ja)
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JP2021027092A (ja
JP2021027092A5 (enExample
Inventor
隼人 岡本
則 陳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2019142130A priority Critical patent/JP7257912B2/ja
Priority to US16/858,274 priority patent/US11444156B2/en
Priority to DE102020118483.2A priority patent/DE102020118483A1/de
Priority to CN202010730923.8A priority patent/CN112310191B/zh
Publication of JP2021027092A publication Critical patent/JP2021027092A/ja
Publication of JP2021027092A5 publication Critical patent/JP2021027092A5/ja
Application granted granted Critical
Publication of JP7257912B2 publication Critical patent/JP7257912B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/128—Anode regions of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions

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  • Electrodes Of Semiconductors (AREA)
JP2019142130A 2019-08-01 2019-08-01 半導体装置 Active JP7257912B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019142130A JP7257912B2 (ja) 2019-08-01 2019-08-01 半導体装置
US16/858,274 US11444156B2 (en) 2019-08-01 2020-04-24 Semiconductor device
DE102020118483.2A DE102020118483A1 (de) 2019-08-01 2020-07-14 Halbleitervorrichtung
CN202010730923.8A CN112310191B (zh) 2019-08-01 2020-07-27 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019142130A JP7257912B2 (ja) 2019-08-01 2019-08-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2021027092A JP2021027092A (ja) 2021-02-22
JP2021027092A5 JP2021027092A5 (enExample) 2021-11-04
JP7257912B2 true JP7257912B2 (ja) 2023-04-14

Family

ID=74165591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019142130A Active JP7257912B2 (ja) 2019-08-01 2019-08-01 半導体装置

Country Status (4)

Country Link
US (1) US11444156B2 (enExample)
JP (1) JP7257912B2 (enExample)
CN (1) CN112310191B (enExample)
DE (1) DE102020118483A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6752259B2 (ja) * 2018-09-19 2020-09-09 本田技研工業株式会社 車両

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049360A (ja) 1998-07-29 2000-02-18 Mitsubishi Electric Corp 半導体装置
JP2012151143A (ja) 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
WO2014148400A1 (ja) 2013-03-21 2014-09-25 富士電機株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3447884B2 (ja) * 1995-03-15 2003-09-16 株式会社東芝 高耐圧半導体素子
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
JP2007324428A (ja) 2006-06-02 2007-12-13 Toyota Motor Corp 半導体装置
JP5961865B2 (ja) * 2010-09-15 2016-08-02 ローム株式会社 半導体素子
JP6082314B2 (ja) * 2012-11-06 2017-02-15 株式会社東芝 半導体装置
JP6296535B2 (ja) * 2013-12-09 2018-03-20 ローム株式会社 ダイオードおよびそれを含む信号出力回路
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
WO2019186853A1 (ja) * 2018-03-29 2019-10-03 新電元工業株式会社 ワイドギャップ半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000049360A (ja) 1998-07-29 2000-02-18 Mitsubishi Electric Corp 半導体装置
JP2012151143A (ja) 2011-01-14 2012-08-09 Toyota Motor Corp 半導体装置
WO2014148400A1 (ja) 2013-03-21 2014-09-25 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
US11444156B2 (en) 2022-09-13
DE102020118483A1 (de) 2021-02-04
CN112310191A (zh) 2021-02-02
JP2021027092A (ja) 2021-02-22
US20210036107A1 (en) 2021-02-04
CN112310191B (zh) 2024-05-07

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