CN111463162A - 载体板的去除方法 - Google Patents
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Abstract
提供载体板的去除方法,能够容易地将载体板从工件上去除。该载体板的去除方法将载体板从借助临时粘接层而设置于载体板的正面上的工件上去除,其中,该载体板的去除方法包含如下的工序:阶梯差部形成工序,从设置有工件的正面侧沿着载体板的外周缘对载体板的外周部进行加工,形成载体板的背面侧比载体板的正面侧向侧方突出的阶梯差部;保持工序,在实施了阶梯差部形成工序之后,在将工件定位于载体板的上方的状态下利用保持单元从上方对工件进行保持;以及载体板去除工序,在实施了保持工序之后,利用按压部件对阶梯差部施加向下的力而使载体板向远离工件的方向移动,从而将载体板从工件去除。
Description
技术领域
本发明涉及载体板的去除方法,将载体板从借助临时粘接层而设置于载体板的正面上的工件上去除。
背景技术
在以移动电话或个人计算机为代表的电子设备中,具有电子电路等器件的器件芯片成为必须的构成要素。器件芯片例如是如下得到的:利用分割预定线(间隔道)将由硅等半导体材料形成的晶片的正面划分成多个区域,在各区域内形成了器件之后,沿着该分割预定线对晶片进行分割,从而得到器件芯片。
利用上述那样的方法得到的器件芯片例如固定于CSP(Chip Size Package,芯片尺寸封装)用的母基板,利用引线接合等方法与该母基板的端子等电连接之后,利用模制树脂进行密封。这样,通过模制树脂对器件芯片进行密封而形成封装器件,从而能够保护器件芯片免受冲击、光、热、水等外部原因的影响。
近年来,开始采用如下的被称为FOWLP(Fan-Out Wafer Level Package,扇出型晶片级封装)的封装技术:使用晶片级的再布线技术,在器件芯片的区域外形成封装端子(例如参照专利文献1)。另外,还提出了如下的被称为FOPLP(Fan-Out Panel LevelPackaging,扇出型面板级封装)的封装技术:以尺寸大于晶片的面板(代表性地是在液晶面板的制造中使用的玻璃基板)级别一并制造封装器件。
在FOPLP中,例如在作为临时基板的载体板的正面上借助临时粘接层而形成布线层(RDL:Redistribution Layer),在该布线层上接合器件芯片。接着,利用模制树脂对器件芯片进行密封而得到封装面板。然后,在通过磨削等方法使封装面板变薄之后,对该封装面板进行分割,从而完成封装器件。
专利文献1:日本特开2016-201519号公报
在上述FOPLP中,例如在将封装面板分割成封装器件之后,将载体板从该封装器件上去除。具体而言,从载体板拾取各封装器件。但是,当封装器件的尺寸较小时,难以从载体板拾取该封装器件。
另一方面,也考虑了在将封装面板分割成封装器件之前将载体板从封装面板上剥离、去除。但是,临时粘接层的粘接力在一定程度上较强,因此难以不损伤封装面板及载体板而将载体板从封装面板上剥离。
发明内容
本发明是鉴于这样的问题点而完成的,其目的在于提供载体板的去除方法,能够容易地将载体板从封装面板等工件上去除。
根据本发明的一个方式,提供载体板的去除方法,将载体板从借助临时粘接层而设置于该载体板的正面上的工件上去除,其中,该载体板的去除方法包含如下的工序:阶梯差部形成工序,从设置有该工件的该正面侧沿着该载体板的外周缘对该载体板的外周部进行加工,形成该载体板的背面侧比该载体板的该正面侧向侧方突出的阶梯差部;保持工序,在实施了该阶梯差部形成工序之后,在将该工件定位于该载体板的上方的状态下利用保持单元从上方对该工件进行保持;以及载体板去除工序,在实施了该保持工序之后,利用按压部件对该阶梯差部施加向下的力而使该载体板向远离该工件的方向移动,从而将该载体板从该工件上去除。
在本发明的一个方式中,优选在该载体板去除工序中,在向该工件与该载体板之间吹送流体之后或在向该工件与该载体板之间吹送流体的同时对该阶梯差部施加向下的力而将该载体板从该工件上去除。
另外,在本发明的一个方式中,优选在该载体板去除工序中,在使该工件和该载体板沉浸于液体中的状态下对该阶梯差部施加向下的力。另外,可以在该液体中含有表面活性剂。
另外,在本发明的一个方式中,优选在该载体板去除工序中,在使该工件和该载体板沉浸于该液体中的状态下,一边对该按压部件赋予振动一边对该阶梯差部施加向下的力。
另外,在本发明的一个方式中,优选在该载体板去除工序中,在使该工件和该载体板沉浸于该液体中的状态下,一边对该液体赋予振动一边对该阶梯差部施加向下的力。
在本发明的一个方式的载体板的去除方法中,从设置有工件的载体板的正面侧沿着载体板的外周缘对载体板的外周部进行加工,形成载体板的背面侧比载体板的正面侧向侧方突出的阶梯差部。由此,通过在利用保持单元从上方对工件进行保持的状态下对阶梯差部施加向下的力,能够容易地将载体板从工件上去除。另外,能够与施加至阶梯差部的向下的力一起利用作用于载体板的重力,因此即使在施加至阶梯差部的向下的力较小的情况下,也能够将载体板从工件上去除。
附图说明
图1的(A)是示出包含载体板和工件在内的复合基板的结构例的剖视图,图1的(B)是示出在阶梯差部形成工序中对复合基板的载体板侧进行保持的情况的剖视图。
图2的(A)是示出在阶梯差部形成工序中在载体板上形成阶梯差部的情况的剖视图,图2的(B)是示出在载体板的整个外周部形成有阶梯差部的状态的剖视图。
图3的(A)是示出保持工序的剖视图,图3的(B)是示出载体板去除工序的剖视图,图3的(C)是示出从工件上去除了载体板的状态的剖视图。
图4的(A)是示出第1变形例的载体板去除工序的剖视图,图4的(B)是示出第2变形例的载体板去除工序的剖视图。
标号说明
1:复合基板;3:载体板;3a:第1面(正面);3b:第2面(背面);3c:阶梯差部;5:临时粘接层;7:工件;7a:第1面(正面);9:器件芯片;11:模制树脂层;2:切削装置;4:卡盘工作台;6:框体;6a:流路;8:保持板;8a:保持面;10:阀;12:吸引源;14:切削单元;16:主轴;18:切削刀具;22:剥离装置;24:保持单元;24a:保持面;26:按压部件;32:喷嘴;34:流体;42:槽;44:液体。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。本实施方式的载体板的去除方法在将载体板从借助临时粘接层而设置于载体板的正面上的工件上去除时使用,包含阶梯差部形成工序(参照图1的(B)、图2的(A)以及图2的(B))、保持工序(参照图3的(A))以及载体板去除工序(参照图3的(B)和图3的(C))。
在阶梯差部形成工序中,使切削刀具从设置有工件的正面侧沿着载体板的外周缘切入载体板的外周部,在该载体板上形成阶梯差部。在保持工序中,在将工件定位于载体板的上方的状态下,从上方对该工件侧进行保持。在载体板去除工序中,利用按压部件对阶梯差部施加向下的力而使载体板向远离工件的方向移动,从而将载体板从工件上去除。以下,对本实施方式的载体板的去除方法进行详细叙述。
图1的(A)是示出在本实施方式的载体板的去除方法中使用的复合基板1的结构例的剖视图。复合基板1例如包含由钠钙玻璃、硼硅酸盐玻璃、石英玻璃等绝缘体材料形成的载体板3。该载体板3例如具有大致平坦的第1面(正面)3a以及与第1面3a相反的一侧的第2面(背面)3b,构成为在从第1面3a侧或第2面3b侧观察而得的俯视图中呈矩形状。载体板3的厚度例如为2mm以下、代表性地为1.1mm。
另外,在本实施方式中,使用由钠钙玻璃、硼硅酸盐玻璃、石英玻璃等绝缘体材料构成的载体板3,但对于载体板3的材质、形状、构造、大小等没有特别限制。例如也可以使用由半导体、陶瓷、树脂、金属等材料构成的板等作为载体板3。也可以将圆盘状的半导体晶片等作为载体板3。
在载体板3的第1面3a侧借助临时粘接层5而设置有工件7。临时粘接层5例如通过使金属膜、绝缘体膜等重叠而形成于第1面3a的大致整体上,具有将载体板3和工件7粘接的功能。另外,临时粘接层5有时也由作为粘接剂发挥功能的树脂膜等构成。
临时粘接层5的厚度例如为20μm以下、代表性地为5μm。当在后述的载体板去除工序中将载体板3从工件7上剥离、去除时,该临时粘接层5分离成紧贴于载体板3侧的第1部分5a(参照图3的(C))以及紧贴于工件7侧的第2部分5b(参照图3的(C))。
工件7例如也被称为封装面板或封装晶片等,其包含:与临时粘接层5接触的布线层(RDL)(未图示);与布线层接合的多个器件芯片9;以及对各器件芯片9进行密封的模制树脂层11。该工件7例如形成为俯视时与载体板3大致相同的大小、形状。另外,工件7的厚度例如为1.5mm以下、代表性地为0.6mm。
另外,工件7的第1面(正面)7a侧可以利用磨削等方法进行加工。另外,在工件7内相邻的器件芯片9之间的区域设定有分割预定线(切断预定线)。沿着任意的分割预定线将工件7切断,从而将工件7分割成分别包含一个或多个器件芯片9的多个工件片。
若沿着所有的分割预定线将工件7(或工件片)切断,则得到与各器件芯片9对应的多个封装器件。不过,对于工件7的材质、形状、构造、大小等没有特别限制。例如工件7也有时主要由布线层构成,不包含器件芯片9、模制树脂层11等。
在本实施方式的载体板的去除方法中,首先进行阶梯差部形成工序,在构成上述复合基板1的载体板3的外周部形成阶梯差部。具体而言,首先对复合基板1的载体板3侧进行保持而使工件7侧向上方露出。图1的(B)是示出在阶梯差部形成工序中对复合基板1的载体板3侧进行保持的情况的剖视图。另外,在图1的(B)中,将一部分的构成要素用功能块示出。
该阶梯差部形成工序使用图1的(B)等所示的切削装置2来进行。切削装置2具有用于对复合基板1进行保持的卡盘工作台4。卡盘工作台4例如包含:圆筒状的框体6,其由以不锈钢为代表的金属材料构成;以及保持板8,其由多孔质材料构成,配置于框体6的上部。
保持板8的上表面成为用于对复合基板1的载体板3侧进行吸引保持的保持面8a。该保持板8的下表面侧经由设置于框体6的内部的流路6a及阀10等而与吸引源12连接。因此,若将阀10打开,则能够使吸引源12的负压作用于保持面8a上。
卡盘工作台4(框体6)与电动机等旋转驱动源(未图示)连结,通过该旋转驱动源所产生的力而绕相对于上述保持面8a大致垂直的旋转轴旋转。另外,卡盘工作台4(框体6)通过加工进给机构(未图示)进行支承,在相对于上述保持面8a大致平行的加工进给方向上移动。
在对复合基板1的载体板3侧进行保持而使工件7侧向上方露出时,如图1的(B)所示,例如使载体板3的第2面3b与卡盘工作台4的保持面8a接触。并且,将阀10打开而使吸引源12的负压作用于保持面8a上。由此,复合基板1的载体板3侧通过卡盘工作台4进行保持,工件7侧向上方露出。
在对复合基板1的载体板3侧进行保持而使工件7侧向上方露出之后,沿着载体板3的外周缘形成阶梯差部。图2的(A)是示出在阶梯差部形成工序中在载体板3上形成阶梯差部3c的情况的剖视图。另外,在图2的(A)中,将一部分的构成要素用功能块表示。
如图2的(A)所示,在卡盘工作台4的上方配置有切削单元14。切削单元14具有作为相对于保持面8a大致平行的旋转轴的主轴16。在主轴16的一端侧安装有在结合材料中分散磨粒而成的环状的切削刀具18。
在主轴16的另一端侧连结有电动机等旋转驱动源(未图示),安装于主轴16的一端侧的切削刀具18通过该旋转驱动源所产生的力而旋转。切削单元14例如通过升降机构(未图示)和分度进给机构(未图示)进行支承,在与保持面8a大致垂直的铅垂方向以及与铅垂方向和加工进给方向大致垂直的分度进给方向上移动。
当在载体板3上形成阶梯差部3c时,首先使保持着复合基板1的卡盘工作台4旋转而使作为加工对象的载体板3的外周缘的一部分(相当于俯视矩形的一边的部分)相对于加工进给方向大致平行。接着,使卡盘工作台4和切削单元14相对地移动而将切削刀具18定位于上述外周缘的一部分的延长线上方。
另外,将切削刀具18的下端定位于比载体板3的第1面3a低并且比第2面3b高的位置。然后,一边使切削刀具18旋转一边使卡盘工作台4在加工进给方向上移动。由此,如图2的(A)所示,能够使切削刀具18从第1面3a侧沿着载体板3的外周缘的一部分切入而对与该外周缘的一部分相当的载体板3的外周部的一部分进行加工。
这里,使切削刀具18切入至未到达载体板3的第2面3b的深度。因此,在外周部的一部分形成阶梯状的阶梯差部3c,该阶梯差部3c的第2面3b侧比第1面3a侧向侧方(在相对于第1面3a或第2面3b平行的方向上朝外)突出。
载体板3(外周部)与切削刀具18的重叠的宽度(即,所形成的阶梯差部3c的宽度或突出量)在不影响从工件7切出的封装器件等的范围内进行设定。例如在设定于工件7的外周部的剩余区域(外周剩余区域)的宽度较宽的情况下,能够将载体板3(外周部)与切削刀具18的重叠的宽度(阶梯差部3c的宽度)设定得较宽。考虑载体板3的去除容易性等,优选阶梯差部3c的宽度例如设定为0.2mm以上且5mm以下。
如上所述,临时粘接层5和工件7构成为俯视时与载体板3大致相同的大小、形状。因此,当使切削刀具18从设置有工件7的第1面3a侧切入至载体板3的外周部的一部分时,临时粘接层5和工件7的所对应的区域也被同时去除。
在按照上述那样的步骤在载体板3的外周部的一部分形成了阶梯差部3c之后,也按照同样的步骤在载体板3的外周部的其他部分形成阶梯差部3c。当在载体板3的整个外周部形成阶梯差部3c时,阶梯差部形成工序结束。图2的(B)是示出在载体板3的整个外周部形成有阶梯差部3c的状态的剖视图。
另外,在本实施方式中,如图2的(B)所示,在载体板3的整个外周部形成了阶梯差部3c,但阶梯差部3c至少形成于载体板3的外周部的任意一部分即可。另外,在载体板或工件为俯视圆形(即、圆盘状)的情况下,例如一边使切削刀具18切入载体板的外周部一边使卡盘工作台4旋转,从而能够在载体板上形成阶梯差部。
在阶梯差部形成工序之后,进行保持工序,从上方对复合基板1的工件7侧进行保持。图3的(A)是示出保持工序的剖视图。保持工序使用图3的(A)等所示的剥离装置22来进行。剥离装置22具有用于从上方对复合基板1的工件7侧进行保持的保持单元24。
在保持单元24的下部形成有保持面24a,该保持面24a具有与工件7的第1面7a相同程度的大小。在该保持面24a上经由流路(未图示)及阀(未图示)等而连接有吸引源(未图示)。因此,若将阀打开,则对保持面24a作用吸引源的负压。另外,保持单元24通过升降机构(未图示)进行支承,在铅垂方向上移动。
在保持工序中,如图3的(A)所示,例如在将工件7定位于载体板3的上方的状态下使保持单元24的保持面24a与该工件7的第1面7a接触。然后,将阀30打开而使吸引源的负压作用于保持面24a。由此,通过保持单元24从上方对复合基板1的工件7侧进行保持。
另外,在本实施方式的保持工序中,使工件7的第1面7a直接与保持单元24的保持面24a接触,但也可以在工件7的第1面7a与保持单元24的保持面24a之间夹设多孔片等。由此,能够防止由于与保持面24a的接触所导致的工件7的损伤或污染等。
在保持工序之后,进行载体板去除工序,将载体板3从工件7上去除。图3的(B)是示出载体板去除工序的剖视图,图3的(C)是示出从工件7上去除了载体板3的状态的剖视图。该载体板去除工序继续使用剥离装置22来进行。
如图3的(B)所示,在保持单元24的侧方,在相当于该保持单元24所保持的复合基板1的阶梯差部3c的位置配置有棒状的按压部件26。该按压部件26例如通过与使保持单元24移动的升降机构不同的升降机构(未图示)进行支承,相对于保持单元24独立地在铅垂方向上移动。
在载体板去除工序中,首先使保持单元24和按压部件26一起向上方移动而提起保持单元24所保持的复合基板1。即,使载体板3的第2面3b侧向下方露出。接着,在维持保持单元24的位置的状态下使按压部件26向下方移动,使该按压部件26的下端与阶梯差部3c接触。即,通过按压部件26对载体板3的阶梯差部3c施加向下的力。
如上所述,复合基板1的工件7侧通过保持单元24从上方进行保持。因此,当通过按压部件26对载体板3的阶梯差部3c施加向下的力时,载体板3以临时粘接层5为界而从工件7上剥离、落下。即,载体板3向远离工件7的方向移动。当将载体板3的整体从工件7上分离而将载体板3从工件7上去除时,载体板去除步骤结束。
如上所述,在本实施方式的载体板的去除方法中,从工件7侧沿着载体板3的外周缘对载体板3的外周部进行加工而形成阶梯差部3c,该阶梯差部3c的载体板3的第2面(背面)3b侧比载体板3的第1面(正面)3a侧向侧方突出。
由此,在利用保持单元24从上方对工件7进行保持的状态下,对阶梯差部3c施加向下的力,从而能够容易地将载体板3从工件7上去除。另外,能够与施加至阶梯差部3c的向下的力一起利用作用于载体板3的重力,因此即使在施加至阶梯差部3c的向下的力较小的情况下,也能够将载体板3从工件7上去除。
另外,本发明不限于上述实施方式的记载,可以进行各种变更并实施。例如上述实施方式的按压部件26构成为能够相对于保持单元24独立地在铅垂方向上移动,但该按压部件26只要至少能够相对于保持单元24相对地移动即可。
因此,例如也可以将按压部件26固定于剥离装置22的壳体(未图示)等而仅使保持单元24移动,从而使按压部件26相对于保持单元24相对地移动。另外,在上述实施方式中,使用一个按压部件26,但也可以使用多个按压部件26。
另外,在上述实施方式中,使切削刀具18从工件7侧沿着载体板3的外周缘切入而形成阶梯差部3c,但例如也可以从工件7侧沿着载体板3的外周缘照射激光束而形成阶梯差部3c。在该情况下,代替切削装置2(切削单元14)而使用至少能够照射可被载体板3吸收的波长的激光束的激光加工装置(激光加工单元)。
另外,当在载体板去除工序中将载体板3去除时,也可以向载体板3与工件7之间(相当于临时粘接层5的区域)吹送流体。图4的(A)是示出第1变形例的载体板去除工序的剖视图。如图4的(A)所示,在该第1变形例中使用的剥离装置22的保持单元24的侧方配置有喷嘴32。在喷嘴32上经由流路(未图示)及阀(未图示)等而连接有流体34的提供源(未图示)。
在从该喷嘴32向载体板3与工件7之间吹送流体34之后,或在向载体板3与工件7之间吹送流体34的同时利用按压部件26对阶梯差部3c施加向下的力,从而能够更容易地将载体板3从工件7上剥离。作为向载体板3与工件7之间吹送的流体34,例如可以使用空气或水等。不过,对于流体34的种类等没有特别限制。
另外,当在载体板去除工序中将载体板3去除时,也可以将载体板3和工件7沉浸于液体中。图4的(B)是示出第2变形例的载体板去除工序的剖视图。如图4的(A)所示,在该第2变形例中使用的剥离装置22的保持单元24的下方配置有能够对载体板3和工件7进行收纳的大小的槽42。在槽42内积存有水等液体44。
在使载体板3和工件7沉浸于槽42内的液体44中的状态下,利用按压部件26对阶梯差部3c施加向下的力,当将载体板3从工件7上剥离时,从工件7上剥离的载体板3在液体44中落下。其结果是,与使载体板3在空气中落下的情况相比,减小伴随着落下的冲击,能够防止载体板3的破损、剥离装置22的振动等。
另外,可以在该液体44中含有表面活性剂。作为液体44中所含的表面活性剂,可以使用容易进入至临时粘接层5的阴离子表面活性剂或阳离子表面活性剂等。这样,在液体44中含有容易进入至临时粘接层5的表面活性剂,从而临时粘接层5容易从表面活性剂所进入的区域分离,能够更容易地将载体板3从工件7上剥离。
另外,在第2变形例中,也可以在使载体板3和工件7沉浸于液体44中之后利用按压部件26对阶梯差部3c施加向下的力时对该按压部件26赋予超声波等的振动。具体而言,一边对按压部件26赋予超声波等的振动一边利用该按压部件26对阶梯差部3c施加向下的力。在该情况下,通过从按压部件26传递的振动的作用,能够更容易地将载体板3从工件7上剥离。
同样地,也可以在使载体板3和工件7沉浸于液体44中之后利用按压部件26对阶梯差部3c施加向下的力时对液体44赋予超声波等的振动。具体而言,一边对液体44赋予超声波等的振动一边利用按压部件26对阶梯差部3c施加向下的力。在该情况下,通过从液体44传递的振动的作用,能够更容易地将载体板3从工件7上剥离。
另外,还可以对第2变形例组合第1变形例。即,也可以在使载体板3和工件7沉浸于液体44中之后向载体板3与工件7之间(相当于临时粘接层5的区域)吹送流体。例如在向载体板3与工件7之间吹送流体34之后,或在向载体板3与工件7之间吹送流体34的同时利用按压部件26对阶梯差部3c施加向下的力,从而能够更容易地将载体板3从工件7上剥离。
除此以外,上述实施方式的构造、方法等只要不脱离本发明的目的的范围,则可以适当变更并实施。
Claims (8)
1.一种载体板的去除方法,将载体板从借助临时粘接层而设置于该载体板的正面上的工件上去除,其中,
该载体板的去除方法包含如下的工序:
阶梯差部形成工序,从设置有该工件的该正面侧沿着该载体板的外周缘对该载体板的外周部进行加工,形成该载体板的背面侧比该载体板的该正面侧向侧方突出的阶梯差部;
保持工序,在实施了该阶梯差部形成工序之后,在将该工件定位于该载体板的上方的状态下利用保持单元从上方对该工件进行保持;以及
载体板去除工序,在实施了该保持工序之后,利用按压部件对该阶梯差部施加向下的力而使该载体板向远离该工件的方向移动,从而将该载体板从该工件上去除。
2.根据权利要求1所述的载体板的去除方法,其中,
在该载体板去除工序中,在向该工件与该载体板之间吹送流体之后或在向该工件与该载体板之间吹送流体的同时对该阶梯差部施加向下的力而将该载体板从该工件上去除。
3.根据权利要求1所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉浸于液体中的状态下对该阶梯差部施加向下的力。
4.根据权利要求2所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉浸于液体中的状态下对该阶梯差部施加向下的力。
5.根据权利要求3所述的载体板的去除方法,其中,
在该液体中含有表面活性剂。
6.根据权利要求4所述的载体板的去除方法,其中,
在该液体中含有表面活性剂。
7.根据权利要求3至6中的任意一项所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉浸于该液体中的状态下,一边对该按压部件赋予振动一边对该阶梯差部施加向下的力。
8.根据权利要求3至6中的任意一项所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉浸于该液体中的状态下,一边对该液体赋予振动一边对该阶梯差部施加向下的力。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
KR20140117892A (ko) * | 2013-03-27 | 2014-10-08 | 주식회사 심텍 | 캐리어 기판을 이용하는 박형 인쇄회로기판의 제조 방법 |
CN104143499A (zh) * | 2013-05-09 | 2014-11-12 | 信越工程株式会社 | 贴合分离方法及分离装置 |
JP2017063150A (ja) * | 2015-09-25 | 2017-03-30 | 株式会社ディスコ | 被加工物の加工方法 |
CN107026123A (zh) * | 2015-12-07 | 2017-08-08 | 株式会社迪思科 | 晶片的加工方法 |
JP2019009198A (ja) * | 2017-06-22 | 2019-01-17 | 株式会社ディスコ | ウェーハの加工方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3988196A (en) * | 1967-10-09 | 1976-10-26 | Western Electric Company, Inc. | Apparatus for transferring an oriented array of articles |
US5091331A (en) * | 1990-04-16 | 1992-02-25 | Harris Corporation | Ultra-thin circuit fabrication by controlled wafer debonding |
JPH06268051A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
JP4220580B2 (ja) * | 1995-02-10 | 2009-02-04 | 三菱電機株式会社 | 半導体装置の製造装置 |
US6066229A (en) * | 1997-07-10 | 2000-05-23 | Sony Corporation | Method of recycling disk recording medium and apparatus for recovering metal reflective film |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP4721828B2 (ja) * | 2005-08-31 | 2011-07-13 | 東京応化工業株式会社 | サポートプレートの剥離方法 |
JP4668052B2 (ja) * | 2005-12-06 | 2011-04-13 | 東京応化工業株式会社 | 剥離装置 |
JP4965485B2 (ja) * | 2008-02-29 | 2012-07-04 | 東京応化工業株式会社 | 処理液浸透ユニットおよび処理装置 |
CN101582265A (zh) * | 2008-05-12 | 2009-11-18 | 新科实业有限公司 | 磁头分离辅助装置及利用该装置制造磁头的方法 |
EP2660851B1 (de) * | 2009-03-18 | 2020-10-14 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger |
US8366873B2 (en) * | 2010-04-15 | 2013-02-05 | Suss Microtec Lithography, Gmbh | Debonding equipment and methods for debonding temporary bonded wafers |
US8950459B2 (en) * | 2009-04-16 | 2015-02-10 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
US9847243B2 (en) * | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
EP2706562A3 (de) * | 2009-09-01 | 2014-09-03 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Halbleiterwafers von einem Trägersubstrat mittels Kippens eines Filmrahmens |
EP2523208B1 (de) * | 2010-04-23 | 2013-06-12 | EV Group GmbH | Lösungsmittelbehälter und Verfahren zum Lösen einer Verbindungsschicht |
US8852391B2 (en) * | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
JP5902406B2 (ja) * | 2010-06-25 | 2016-04-13 | 株式会社半導体エネルギー研究所 | 分離方法および半導体装置の作製方法 |
US9919509B2 (en) * | 2011-01-07 | 2018-03-20 | Tokyo Electron Limited | Peeling device, peeling system and peeling method |
WO2012109123A2 (en) * | 2011-02-09 | 2012-08-16 | Branson Ultrasonics Corporation | Method and apparatus for separating laminations |
KR101869922B1 (ko) * | 2011-11-28 | 2018-06-22 | 삼성디스플레이 주식회사 | 진공 필링 장치 및 진공 필링 방법 |
JP2014033161A (ja) * | 2012-08-06 | 2014-02-20 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP6366996B2 (ja) * | 2014-05-19 | 2018-08-01 | 株式会社ディスコ | リフトオフ方法 |
JP6529321B2 (ja) * | 2015-04-14 | 2019-06-12 | 株式会社ディスコ | デバイスパッケージの製造方法 |
KR101898121B1 (ko) * | 2015-10-22 | 2018-09-12 | 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 | 워크피스 처리 방법 및 그러한 방법을 위해 설계된 장치 |
JP6822858B2 (ja) * | 2016-01-26 | 2021-01-27 | 株式会社半導体エネルギー研究所 | 剥離の起点の形成方法及び剥離方法 |
JP6305447B2 (ja) * | 2016-01-28 | 2018-04-04 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | キャリア基板を外すための屈曲可能なキャリア台、デバイス、および方法 |
TWI732005B (zh) * | 2016-07-29 | 2021-07-01 | 日商富士軟片股份有限公司 | 套組、洗淨劑組成物及半導體元件的製造方法 |
JP6976828B2 (ja) * | 2017-11-24 | 2021-12-08 | 株式会社ディスコ | 剥離装置 |
-
2019
- 2019-01-22 JP JP2019008376A patent/JP7146354B2/ja active Active
- 2019-12-27 SG SG10201913555XA patent/SG10201913555XA/en unknown
-
2020
- 2020-01-13 CN CN202010030220.4A patent/CN111463162B/zh active Active
- 2020-01-16 TW TW109101554A patent/TWI816969B/zh active
- 2020-01-21 US US16/748,226 patent/US10933618B2/en active Active
- 2020-01-22 DE DE102020200724.1A patent/DE102020200724B4/de active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013247135A (ja) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
KR20140117892A (ko) * | 2013-03-27 | 2014-10-08 | 주식회사 심텍 | 캐리어 기판을 이용하는 박형 인쇄회로기판의 제조 방법 |
CN104143499A (zh) * | 2013-05-09 | 2014-11-12 | 信越工程株式会社 | 贴合分离方法及分离装置 |
JP2017063150A (ja) * | 2015-09-25 | 2017-03-30 | 株式会社ディスコ | 被加工物の加工方法 |
CN107026123A (zh) * | 2015-12-07 | 2017-08-08 | 株式会社迪思科 | 晶片的加工方法 |
JP2019009198A (ja) * | 2017-06-22 | 2019-01-17 | 株式会社ディスコ | ウェーハの加工方法 |
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