TWI816969B - 載板移除方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000002093 peripheral effect Effects 0.000 claims abstract description 34
- 238000003825 pressing Methods 0.000 claims abstract description 28
- 239000012790 adhesive layer Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims description 27
- 239000012530 fluid Substances 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 25
- 239000002131 composite material Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
- 238000004806 packaging method and process Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 238000007789 sealing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/10—Removing layers, or parts of layers, mechanically or chemically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1111—Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1121—Using vibration during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1126—Using direct fluid current against work during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
- Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1922—Vibrating delaminating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1928—Differential fluid pressure delaminating means
- Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
Abstract
[課題]提供一種載板移除方法,可輕易地自工件移除載板。[解決手段]提供一種載板移除方法,係自透過暫時接著層設置於載板正面之工件移除載板;載板移除方法包含:段差部形成步驟,自設有工件之正面側沿著載板的外周緣加工載板的外周部,形成載板的背面側相較於載板的正面側往側邊突出之段差部;保持步驟,實施段差部形成步驟之後,在工件定位於載板的上方之狀態下,以保持單元自上方保持工件;及載板移除步驟,實施保持步驟之後,以推壓構件對段差部施加向下力,使載板往遠離工件之方向移動,藉此自工件移除載板。
Description
本發明關於一種載板移除方法,自透過暫時接著層設置於載板正面之工件移除載板。
以行動電話或個人電腦為代表之電子設備中,具備電子電路等元件之元件晶片已成為必備之構成要素。元件晶片可由以下方式取得,例如將矽等半導體材料所組成之晶圓的正面以分割預定線(切割道)劃分成多個區域,於各區域形成元件後,沿著該分割預定線分割晶圓。
由上述方法所取得之元件晶片,係固定於例如CSP(Chip Size Package,晶片級封裝)用之母基板,以引線接合等方法來和該母基板的端子等做電性連接後,並以封膜樹脂密封。像這樣,由封膜樹脂將元件晶片密封而形成封裝元件,可保護元件晶片不受衝撃、光、熱、水等外在因素影響。
近年來,開始採用一種稱為FOWLP(Fan-Out Wafer Level Package,扇出型晶圓級封裝)之封裝技術,係使用晶圓層級的重佈技術而在元件晶片的區域外形成封裝端子(參照例如專利文獻1)。另外,也有人提出了一種稱為FOPLP(Fan-Out Panel Level Packaging,扇出型面板級封裝)之封裝技術,係在尺寸大於晶圓之面板(代表性的為用於液晶面板製造之玻璃基板)的層級將封裝元件總括製造。
FOPLP,係例如在作為暫時性基板之載板的正面透過暫時接著層形成配線層(RDL:Redistribution Layer,重佈層),並在該配線層上接合元件晶片。接著,將元件晶片以封膜樹脂密封,取得封裝面板。然後,將封裝面板藉研削等方法薄化,再將該封裝面板分割,藉以完成封裝元件。
[習知技術文獻]
[專利文獻]
[專利文獻1] 日本特開2016-201519號公報
[發明所欲解決的課題]
上述之FOPLP,係例如將封裝面板分割成封裝元件後,從該封裝元件將載板移除。具體上,係從載板上拾取各封裝元件。不過,若封裝元件之尺寸較小,則難以從載板上拾取該封裝元件。
另一方面,也可以設想到,將封裝面板分割成封裝元件之前,從封裝面板上將載板剝離並移除。然而,暫時接著層之接著力有一定的強度,故難以不讓封裝面板或載板損傷而將載板自封裝面板剝離。
本發明有鑒於這類問題點,其目的在於提供一種載板移除方法,可從封裝面板等工件將載板輕易地移除。
[解決課題的技術手段]
根據本發明的一態樣,提供一種載板移除方法,自透過暫時接著層設置於載板正面之工件移除該載板;該載板移除方法包含:段差部形成步驟,自設有該工件之該正面側沿著該載板的外周緣加工該載板的外周部,形成該載板的背面側相較於該載板的該正面側往側邊突出之段差部;保持步驟,實施該段差部形成步驟之後,在該工件定位於該載板的上方之狀態下,以保持單元自上方保持該工件;及載板移除步驟,實施該保持步驟之後,以推壓構件對該段差部施加向下力,使該載板往遠離該工件之方向移動,藉此自該工件移除該載板。
本發明的一態樣當中,較佳為在該載板移除步驟中,在對該工件與該載板之間噴吐流體之後,或是對該工件與該載板之間噴吐流體的同時,對該段差部施加向下力,自該工件移除該載板。
另外,本發明的一態樣當中,較佳為在該載板移除步驟中,在將該工件與該載板沉浸於液體之狀態下,對該段差部施加向下力。另外,該液體亦可包含界面活性劑。
另外,本發明的一態樣當中,較佳為在該載板移除步驟中,在將該工件與該載板沉浸於該液體之狀態下,一邊對該推壓構件賦予振動,一邊對該段差部施加向下力。
另外,本發明的一態樣當中,較佳為在該載板移除步驟中,在將該工件與該載板沉浸於該液體之狀態下,一邊對該液體賦予振動,一邊對該段差部施加向下力。
[發明功效]
本發明的一態樣相關的載板移除方法中,自設有工件之載板正面側沿著載板的外周緣加工載板的外周部,形成載板的背面側相較於載板的正面側往側邊突出之段差部。故,以保持單元自上方保持工件之狀態下,對段差部施加向下力,藉此可輕易地自工件移除載板。另外,除了對段差部施加之向下力,還可利用作用於載板之重力,故對段差部施加之向下力較小的情況下,也可自工件移除掉載板。
參照所附圖式,說明本發明之一態樣相關的實施方式。本實施方式相關的載板移除方法,係用於自透過暫時接著層設置於載板正面之工件移除載板之際,包含段差部形成步驟(參照圖1(B)、圖2(A)及圖2(B))、保持步驟(參照圖3(A))及載板移除步驟(參照圖3(B)及圖3(C))。
段差部形成步驟中,自設有工件之正面側沿著載板的外周緣使切割刀片切入載板的外周部,於該載板形成段差部。保持步驟中,在工件定位於載板的上方之狀態下,自上方保持該工件側。載板移除步驟中,以推壓構件對段差部施加向下力,使載板往遠離工件之方向移動,藉此自工件移除載板。以下,詳述本實施方式相關的載板移除方法。
圖1(A)係顯示本實施方式相關的載板移除方法中所使用之複合基板1的構成例之剖面圖。複合基板1,包含例如以鈉玻璃、硼矽酸鹽玻璃、石英玻璃等絕緣體材料所形成之載板3。該載板3具有例如大致上平坦的第1面(正面)3a及第1面3a相反側的第2面(背面)3b,構成為自第1面3a側或是第2面3b側觀察俯視下呈矩形狀。載板3之厚度,係例如2mm以下,代表性的為1.1mm。
此外,在本實施方式中,雖使用以鈉玻璃、硼矽酸鹽玻璃、石英玻璃等絕緣體材料所組成之載板3,但載板3之材質、形狀、構造、大小等並無特別限制。例如,也可將半導體、陶瓷、樹脂、金屬等材料所組成之板片等作為載板3使用。亦可將圓盤狀之半導體晶圓等作為載板3。
在載板3的第1面3a側,透過暫時接著層5設有工件7。暫時接著層5係藉由例如重疊金屬膜或絕緣體膜等而形成於第1面3a的大致全體,具有使載板3與工件7接著之功能。另外,暫時接著層5也會由作為接著劑發揮功能之樹脂膜等所構成。
暫時接著層5的厚度係例如20μm以下,代表性的為5μm。於後述之載板移除步驟中自工件7將載板3剝離並移除之際,該暫時接著層5分離成和載板3側密接之第1部分5a(參照圖3(C))及和工件7側密接之第2部分5b(參照圖3(C))。
工件7亦稱為例如封裝面板或封裝晶圓等,包含相接至暫時接著層5之配線層(RDL)(未圖示)、接合在配線層之多個元件晶片9及將各元件晶片9密封之封膜樹脂層11。該工件7是例如俯視下與載板3大致相同大小、形狀。另外,工件7的厚度為例如1.5mm以下,代表性的為0.6mm。
此外,工件7的第1面(正面)7a側,也可以研削等方法進行加工。另外,在工件7内相鄰元件晶片9之間的區域,設定了分割預定線(切斷預定線)。藉由沿著任意的分割預定線切斷工件7,讓工件7分割成各包含1個或是多個元件晶片9之多個工件片。
沿著所有的分割預定線切斷工件7(或是工件片),就可取得對應各元件晶片9之多個封裝元件。但是,工件7的材質、形狀、構造、大小等並沒有特別限制。例如,工件7也可主要由配線層所構成,而不包含元件晶片9或封膜樹脂層11等。
本實施方式相關的載板移除方法中,首先,進行段差部形成步驟,在構成上述複合基板1之載板3的外周部形成段差部。具體上,首先,保持複合基板1的載板3側使工件7側朝上方露出。圖1(B)係顯示段差部形成步驟中複合基板1的載板3側受保持的樣子之剖面圖。此外,圖1(B)中,將部分的構成要素以功能方塊顯示。
該段差部形成步驟,使用圖1(B)等所示之切割裝置2來進行。切割裝置2具備用以保持複合基板1的卡盤台4。卡盤台4包含例如以不鏽鋼為代表之金屬材料所組成之圓筒狀的框體6以及多孔質材料所組成並配置於框體6上部之保持板8。
保持板8的上表面成為用以將複合基板1的載板3側吸引並保持的保持面8a。該保持板8的下表面側,透過框體6的内部所設之流路6a和閥門10等來和吸引源12相連接。因此,開啟閥門10,就可使吸引源12的負壓作用於保持面8a。
卡盤台4(框體6)係和馬達等旋轉驅動源(未圖示)相連結,藉由該旋轉驅動源所產生之力,繞著和上述保持面8a大致上垂直之旋轉軸旋轉。另外,卡盤台4(框體6)由加工進給機構(未圖示)所支撐,往相對於上述保持面8a大致上平行之加工進給方向移動。
保持複合基板1的載板3側使工件7側朝上方露出之際,如圖1(B)所示,例如使載板3的第2面3b和卡盤台4的保持面8a接觸。再將閥門10開啟,使吸引源12的負壓作用於保持面8a。藉此,複合基板1的載板3側由卡盤台4所保持,工件7側朝上方露出。
保持複合基板1的載板3側使工件7側朝上方露出後,沿著載板3的外周緣形成段差部。圖2(A)係顯示段差部形成步驟中載板3上形成段差部3c的樣子之剖面圖。此外,圖2(A)中,將部分的構成要素以功能方塊顯示。
如圖2(A)所示,卡盤台4的上方,配置有切割單元14。切割單元14具備相對於保持面8a大致上平行的旋轉軸所組成之主軸16。在主軸16的一端側,裝設有磨粒分散於結合材料中而組成之環狀切割刀片18。
在主軸16的另一端側,係和馬達等旋轉驅動源(未圖示)相連結,主軸16的一端側所裝設之切割刀片18,藉由該旋轉驅動源所產生之力進行旋轉。切割單元14由例如昇降機構(未圖示)與分度進給機構(未圖示)所支撐,在相對於保持面8a大致垂直之鉛直方向以及和鉛直方向與加工進給方向大致垂直之分度進給方向移動。
於載板3形成段差部3c之際,首先,使保持著複合基板1之卡盤台4旋轉,令作為加工對象之載板3的外周緣的局部(相當於俯視下呈矩形的一邊之部分)相對於加工進給方向大致上平行。接著,使卡盤台4與切割單元14相對地移動,使切割刀片18定位於上述外周緣的局部的延長線上方。
另外,使切割刀片18的下端,位於比載板3的第1面3a更低,比第2面3b更高之位置。然後,一邊使切割刀片18旋轉,一邊使卡盤台4往加工進給方向移動。藉此,如圖2(A)所示,可使切割刀片18自第1面3a側沿著載板3的外周緣的局部切入,加工相當於該外周緣的局部之載板3外周部的局部。
在此,使切割刀片18切入到未達載板3的第2面3b之深度。因此,於外周部的局部,形成了第2面3b側比第1面3a側往側邊(在平行於第1面3a或是第2面3b之方向上向外)突出之階梯狀的段差部3c。
載板3(外周部)與切割刀片18重疊的寬度(亦即,所形成段差部3c的寬度,或是突出量),係設定在不會影響從工件7切下的封裝元件等之範圍内。例如,工件7的外周部所設定之剩餘區域(外周剩餘區域)的寬度較寬的情況下,可將載板3(外周部)與切割刀片18重疊的寬度(段差部3c的寬度)設定較寬。若考慮到載板3的移除難易度等,則段差部3c的寬度,較佳為設定在例如0.2mm以上5mm以下。
如上所述,暫時接著層5及工件7,係構成為俯視下與載板3大致相同大小、形狀。因此,若使切割刀片18從設有工件7的第1面3a側切入載板3外周部的局部,則亦可將對應暫時接著層5及工件7的區域同時移除。
以上述般的流程於載板3的外周部的局部形成段差部3c之後,也以同樣的流程於載板3的外周部的其他部分形成段差部3c。若在載板3的整個外周部形成了段差部3c,則段差部形成步驟結束。圖2(B)係顯示在載板3的整個外周部形成有段差部3c的狀態之剖面圖。
此外,在本實施方式中,如圖2(B)所示,在載板3的整個外周部形成有段差部3c,但段差部3c只要至少有形成在載板3的外周部的任意局部即可。另外,載板或工件係俯視下為圓形(亦即,圓盤狀)的情況下,藉由例如一邊使切割刀片18切入載板的外周部一邊使卡盤台4旋轉,可於載板形成段差部。
段差部形成步驟之後,進行保持步驟,自上方保持複合基板1的工件7側。圖3(A)係顯示保持步驟之剖面圖。保持步驟使用圖3(A)等所示之剝離裝置22來進行。剝離裝置22具備用以自上方保持複合基板1的工件7側的保持單元24。
在保持單元24的下部形成有具有和工件7的第1面7a同樣程度大小之保持面24a。該保持面24a係透過流路(未圖示)及閥門(未圖示)等來和吸引源(未圖示)相連接。因此,開啟閥門時,會使吸引源的負壓作用於保持面24a。另外,保持單元24由昇降機構(未圖示)所支撐,於鉛直方向移動。
保持步驟中,如圖3(A)所示,例如,在工件7定位於載板3的上方之狀態下,使保持單元24的保持面24a和該工件7的第1面7a接觸。再開啟閥門,使吸引源的負壓作用於保持面24a。藉此,使複合基板1的工件7側自上方由保持單元24所保持。
此外,本實施方式的保持步驟中,使工件7的第1面7a對於保持單元24的保持面24a直接接觸,但亦可在工件7的第1面7a與保持單元24的保持面24a之間置入多孔薄片等。藉此,可防止起因於與保持面24a接觸所導致的工件7的損傷或汚染等。
保持步驟之後,進行載板移除步驟,自工件7移除載板3。圖3(B)係顯示載板移除步驟之剖面圖,圖3(C)係顯示已自工件7移除載板3的狀態之剖面圖。該載板移除步驟繼續使用剝離裝置22來進行。
如圖3(B)所示,於保持單元24的側邊,相當於由該保持單元24所保持之複合基板1的段差部3c之位置,配置有棒狀的推壓構件26。該推壓構件26由例如使保持單元24移動之昇降機構以外的昇降機構(未圖示)所支撐,獨立於保持單元24而在鉛直方向移動。
載板移除步驟中,首先,使保持單元24與推壓構件26一起往上方移動,將保持單元24所保持之複合基板1抬高。亦即,使載板3的第2面3b側朝下方露出。接著,維持保持單元24的位置不動,使推壓構件26往下方移動,讓該推壓構件26的下端和段差部3c接觸。亦即,藉由推壓構件26對載板3的段差部3c施加向下力。
如上所述,複合基板1的工件7側,係由保持單元24自上方所保持。因此,若藉由推壓構件26對載板3的段差部3c施加向下力,則載板3以暫時接著層5為界自工件7剝離並落下。亦即,載板3往遠離工件7之方向移動。若載板3的整體從工件7分離,載板3自工件7移除,則載板移除步驟結束。
如上所述,本實施方式相關的載板移除方法中,自工件7側沿著載板3的外周緣對載板3的外周部加工,形成有載板3的第2面(背面)3b側比載板3的第1面(正面)3a側往側邊突出之段差部3c。
故,在以保持單元24自上方保持工件7之狀態下,對段差部3c施加向下力,藉此可輕易地自工件7將載板3移除。另外,在對段差部3c施加之向下力的同時,還可利用作用於載板3之重力,故即使對段差部3c施加之向下力較小的情況下,也可自工件7將載板3移除。
此外,本發明,並不限於上述實施方式的記載,可做各種變更並實施。例如上述實施方式的推壓構件26,雖構成為可獨立於保持單元24而在鉛直方向移動,但該推壓構件26只要至少可相對於保持單元24相對移動即可。
因此,亦可例如將推壓構件26固定於剝離裝置22的筐體(未圖示)等,僅使保持單元24移動,藉此讓推壓構件26相對於保持單元24相對移動。另外,上述實施方式中,使用了1個推壓構件26,但也可使用多個推壓構件26。
另外,上述實施方式中,使切割刀片18自工件7側沿著載板3的外周緣切入而形成段差部3c,但亦可例如自工件7側沿著載板3的外周緣照射雷射光束而形成段差部3c。在此情況下,使用可照射至少會被載板3吸收之波長雷射光束的雷射加工裝置(雷射加工單元)取代切割裝置2(切割單元14)。
另外,在載板移除步驟中將載板3移除之際,也可對載板3與工件7之間(相當於暫時接著層5之區域)噴吐流體。圖4(A)係顯示第1變形例的載板移除步驟之剖面圖。如圖4(A)所示,該第1變形例中所使用之剝離裝置22的保持單元24的側邊,配置有噴嘴32。噴嘴32透過流路(未圖示)及閥門(未圖示)等來和流體34的供給源(未圖示)相連接。
自該噴嘴32對載板3與工件7之間噴吐流體34後,或是在對載板3與工件7之間噴吐流體34的同時,以推壓構件26對段差部3c施加向下力,藉此可更輕易地自工件7將載板3剝離。作為往載板3與工件7之間噴吐之流體34,可使用例如空氣或水等。但是,流體34的類型等並沒有特別限制。
另外,在載板移除步驟中將載板3移除之際,亦可將載板3與工件7沉浸於液體。圖4(B)係顯示第2變形例的載板移除步驟之剖面圖。如圖4(B)所示,該第2變形例中所使用之剝離裝置22的保持單元24的下方,配置有可容納載板3與工件7之大小的槽體42。槽體42内儲有水等液體44。
將載板3與工件7沉浸於槽體42内的液體44之狀態下,若以推壓構件26對段差部3c施加向下力,自工件7將載板3剝離,則自工件7剝離之載板3會落下在液體44中。其結果,和載板3在空氣中落下的情況相比,落下造成的衝撃變小,可防止載板3的破損或剝離裝置22的振動等。
此外,該液體44也可包含界面活性劑。作為液體44所含之界面活性劑,可使用容易侵入暫時接著層5之陰離子界面活性劑或陽離子界面活性劑等。如此一來,藉由使容易侵入暫時接著層5的界面活性劑包含在液體44中,使暫時接著層5容易和界面活性劑所侵入之區域分離,可更輕易地自工件7將載板3剝離。
另外,在第2變形例中,將載板3與工件7沉浸於液體44後,以推壓構件26對段差部3c施加向下力之際,亦可對該推壓構件26賦予超音波等振動。具體上,一邊將超音波等振動賦予推壓構件26,一邊以該推壓構件26對段差部3c施加向下力。在此情況下,藉由自推壓構件26傳來之振動的作用,可更輕易地自工件7將載板3剝離。
同樣地,將載板3與工件7沉浸於液體44後,以推壓構件26對段差部3c施加向下力之際,亦可對液體44賦予超音波等振動。具體上,一邊將超音波等振動賦予液體44,一邊以該推壓構件26對段差部3c施加向下力。在此情況下,藉由自液體44傳來之振動的作用,可更輕易地自工件7將載板3剝離。
另外,亦可對於第2變形例,更加以組合第1變形例。亦即,將載板3與工件7沉浸於液體44後,也可對載板3與工件7之間(相當於暫時接著層5之區域)噴吐流體。例如,對載板3與工件7之間噴吐流體34後,或是在對載板3與工件7之間噴吐流體34的同時,以推壓構件26對段差部3c施加向下力,可更輕易地自工件7將載板3剝離。
再者,上述之實施方式相關的構造、方法等,只要不脫離本發明目的之範圍,便可適度變更並實施。
1:複合基板
3:載板
3a:載板的第1面(正面)
3b:載板的第2面(背面)
3c:段差部
5:暫時接著層
7:工件
7a:工件的第1面(正面)
9:元件晶片
11:封膜樹脂層
2:切割裝置
4:卡盤台
6:框體
6a:流路
8:保持板
8a:保持面
10:閥門
12:吸引源
14:切割單元
16:主軸
18:切割刀片
22:剝離裝置
24:保持單元
24a:保持面
26:推壓構件
32:噴嘴
34:流體
42:槽體
44:液體
圖1(A)係顯示包含載板與工件的複合基板之構成例的剖面圖,圖1(B)係顯示段差部形成步驟中複合基板的載板側受保持的樣子之剖面圖。
圖2(A)係顯示段差部形成步驟中載板上形成段差部的樣子之剖面圖,圖2(B)係顯示在載板的整個外周部形成有段差部的狀態之剖面圖。
圖3(A)係顯示保持步驟之剖面圖,圖3(B)係顯示載板移除步驟之剖面圖,圖3(C)係顯示已從工件移除掉載板的狀態之剖面圖。
圖4(A)係顯示第1變形例的載板移除步驟之剖面圖,圖4(B)係顯示第2變形例的載板移除步驟之剖面圖。
1:複合基板
2:切割裝置
3:載板
3a:載板的第1面(正面)
3b:載板的第2面(背面)
4:卡盤台
5:暫時接著層
6:框體
6a:流路
7:工件
7a:工件的第1面(正面)
8:保持板
8a:保持面
9:元件晶片
10:閥門
11:封膜樹脂層
12:吸引源
Claims (8)
- 一種載板移除方法,自透過暫時接著層設置於載板正面之工件移除該載板; 該載板移除方法包含: 段差部形成步驟,自設有該工件之該正面側沿著該載板的外周緣加工該載板的外周部,形成該載板的背面側相較於該載板的該正面側往側邊突出之段差部; 保持步驟,實施該段差部形成步驟之後,在該工件定位於該載板的上方之狀態下,以保持單元自上方保持該工件;及 載板移除步驟,實施該保持步驟之後,以推壓構件對該段差部施加向下力,使該載板往遠離該工件之方向移動,藉此自該工件移除該載板。
- 如請求項1之載板移除方法,其中, 在該載板移除步驟中,在對該工件與該載板之間噴吐流體之後,或是對該工件與該載板之間噴吐流體的同時,對該段差部施加向下力,自該工件移除該載板。
- 如請求項1之載板移除方法,其中, 在該載板移除步驟中,在將該工件與該載板沉浸於液體之狀態下,對該段差部施加向下力。
- 如請求項2之載板移除方法,其中, 在該載板移除步驟中,在將該工件與該載板沉浸於液體之狀態下,對該段差部施加向下力。
- 如請求項3之載板移除方法,其中, 該液體包含界面活性劑。
- 如請求項4之載板移除方法,其中, 該液體包含界面活性劑。
- 如請求項3至請求項6中任1項之載板移除方法,其中, 在該載板移除步驟中,在將該工件與該載板沉浸於該液體之狀態下,一邊對該推壓構件賦予振動,一邊對該段差部施加向下力。
- 如請求項3至請求項6中任1項所述之載板移除方法,其中, 在該載板移除步驟中,在將該工件與該載板沉浸於該液體之狀態下,一邊對該液體賦予振動,一邊對該段差部施加向下力。
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