CN112435950A - 载体板的去除方法 - Google Patents
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Abstract
本发明提供载体板的去除方法,从工件容易地去除载体板。当从借助设置在载体板的整个正面上的临时粘接层而与该载体板的该正面的除外缘部以外的区域粘接的工件将该载体板去除时使用该方法,其中,该载体板的去除方法包含如下的工序:临时粘接层去除工序,将该临时粘接层的外缘部的一部分或全部去除;保持工序,在去除了该临时粘接层的该外缘部的一部分或全部之后,利用保持单元从上方对该工件进行保持;以及载体板去除工序,在从上方对该工件进行了保持的状态下,利用推压部件从该载体板的该正面侧向该载体板的该外缘部施加朝下的力而使该载体板向从该工件离开的方向移动,从而将该载体板从该工件去除。
Description
技术领域
本发明涉及当从借助临时粘接层而粘接于载体板的正面上的工件将载体板去除时使用的载体板的去除方法。
背景技术
在以移动电话或个人计算机为代表的电子设备中,具有电子电路等器件的器件芯片成为必须的构成要素。对于器件芯片,例如通过利用分割预定线(间隔道)将由硅等半导体材料形成的晶片的正面划分成多个区域且在各区域内形成器件,然后沿着该分割预定线对晶片进行分割,由此得到器件芯片。
利用上述那样的方法得到的器件芯片例如固定于CSP(Chip Size Package,芯片尺寸封装)用的母基板,利用引线接合等方法与该母基板的端子等电连接后,利用模制树脂进行密封。这样,通过模制树脂对器件芯片进行密封而形成封装器件,从而能够保护器件芯片而免受冲击、光、热、水等外部原因的影响。
近年来,开始采用被称为FOWLP(Fan-Out Wafer Level Package,扇出型晶片级封装)的封装技术:使用晶片级的再布线技术在器件芯片的区域外形成封装端子(例如参照专利文献1)。另外,还提出了被称为FOPLP(Fan-Out Panel Level Packaging,扇出型面板级封装)的封装技术:利用尺寸比晶片大的面板(代表地为用于制造液晶面板的玻璃基板)级一并地制造封装器件。
在FOPLP中,例如在作为临时基板的载体板的正面上借助临时粘接层而形成布线层(RDL:Redistribution Layer),在该布线层上接合器件芯片。接着,将器件芯片利用模制树脂进行密封,得到封装面板。然后,通过磨削等方法使封装面板变薄之后,对该封装面板进行分割,从而完成封装器件。
专利文献1:日本特开2016-201519号公报
在上述FOPLP中,例如在将封装面板分割成封装器件之后,从该封装器件去除载体板。具体而言,从载体板拾取各封装器件。但是,当封装器件的尺寸较小时,难以从载体板拾取该封装器件。
另一方面,也考虑在将封装面板分割成封装器件之前,从封装面板剥离、去除载体板。但是,临时粘接层的粘接力强到某一程度,因此难以不损伤封装面板或载体板而将载体板从封装面板剥离。
发明内容
本发明是鉴于这样的问题点而完成的,其目的在于提供载体板的去除方法,能够从封装面板等工件容易地去除载体板。
根据本发明的一个方式,提供载体板的去除方法,当从借助设置在载体板的整个正面上的临时粘接层而与该载体板的该正面的除外缘部以外的区域粘接的工件将该载体板去除时使用该方法,其中,该载体板的去除方法包含如下的工序:临时粘接层去除工序,将该临时粘接层的外缘部的一部分或全部去除;保持工序,在去除了该临时粘接层的该外缘部的一部分或全部之后,利用保持单元从上方对该工件进行保持;以及载体板去除工序,在从上方对该工件进行了保持的状态下,利用推压部件从该载体板的该正面侧向该载体板的该外缘部施加朝下的力而使该载体板向从该工件离开的方向移动,从而将该载体板从该工件去除。
在本发明的一个方式中,有时在该载体板去除工序中,在对该工件与该载体板之间吹送流体之后向该载体板的该外缘部施加朝下的力,或一边对该工件与该载体板之间吹送流体一边向该载体板的该外缘部施加朝下的力,将该载体板从该工件去除。
另外,在本发明的一个方式中,也可以是,在该载体板去除工序中,在使该工件和该载体板沉入至液体中的状态下,向该载体板的该外缘部施加朝下的力。另外,可以在该液体中包含表面活性剂。
另外,在本发明的一个方式中,也可以是,在该载体板去除工序中,在使该工件和该载体板沉入至该液体中的状态下,一边对该推压部件赋予振动一边向该载体板的该外缘部施加朝下的力。
另外,在本发明的一个方式中,也可以是,在该载体板去除工序中,在使该工件和该载体板沉入至该液体中的状态下,一边对该液体赋予振动一边向该载体板的该外缘部施加朝下的力。
在本发明的一个方式的载体板的去除方法中,将临时粘接层的外缘部的至少一部分去除,由此,使临时粘接层的外缘部的粘固于载体板的部分从对载体板与工件进行粘接的临时粘接层的中央部分离。
由此,通过利用保持单元从上方对工件进行保持而向载体板的外缘部施加朝下的力,能够不受外缘部的粘固于载体板的部分的影响而将载体板容易地从工件去除。另外,与施加至载体板的外缘部的朝下的力一起利用作用于载体板的重力,因此在从工件去除载体板时无需较大的力。
附图说明
图1的(A)是示出包含载体板和工件在内的复合基板的结构例的剖视图,图1的(B)是将图1的(A)的一部分放大而示出的剖视图。
图2的(A)是示出将临时粘接层的外缘部的一部分去除的情况的剖视图,图2的(B)是示出临时粘接层的外缘部的一部分被去除的状态的剖视图。
图3的(A)是示出从上方对工件进行保持的情况的剖视图,图3的(B)是示出对载体板的外缘部施加朝下的力的情况的剖视图,图3的(C)是示出从工件去除了载体板的状态的剖视图。
图4的(A)是示出利用第1变形例的载体板的去除方法将载体板从工件去除的情况的剖视图,图4的(B)是示出利用第2变形例的载体板的去除方法将载体板从工件去除的情况的剖视图。
标号说明
1:复合基板;3:载体板;3a:第1面(正面);3b:第2面(背面);5:临时粘接层;5a:中央部;5b:外缘部;5c:第1部分;5d:第2部分;5e:一部分;7:工件;7a:第1面(正面);9:器件芯片;11:模制树脂层;2:激光加工装置;4:卡盘工作台;6:框体;6a:流路;8:保持板;8a:保持面;10:阀;12:吸引源;14:激光照射单元;16:激光束;22:剥离装置;24:保持单元;24a:保持面;26:推压部件;32:喷嘴;34:流体;42:槽;44:液体。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。图1的(A)是示出本实施方式的载体板的去除方法中使用的复合基板1的结构例的剖视图,图1的(B)是将图1的(A)的一部分放大而示出的剖视图。复合基板1例如包含由钠钙玻璃、硼硅酸盐玻璃、石英玻璃等绝缘体材料形成的载体板3。
该载体板3具有大致平坦的第1面(正面)3a和与第1面3a相反的一侧的第2面(背面)3b,构成为从第1面3a侧或第2面3b侧观察的形状为矩形的平板状。载体板3的厚度例如为2mm以下,代表地为1.1mm。
另外,在本实施方式中,使用由钠钙玻璃、硼硅酸盐玻璃、石英玻璃等绝缘体材料形成的载体板3,但对于载体板3的材质、形状、构造、大小等没有特别限制。例如也可以使用由半导体、陶瓷、树脂、金属等材料形成的板作为载体板3。也可以将半导体晶片等圆盘状的板作为载体板3。
在载体板3的第1面3a侧借助临时粘接层5而粘接有工件7。临时粘接层5例如通过使金属膜或绝缘体膜等重叠而设置于第1面3a的大致整体。另外,该临时粘接层5有时也由作为粘接剂发挥功能的树脂膜等构成。
临时粘接层5的厚度例如为20μm以下,代表地为5μm。该临时粘接层5包含:将载体板3与工件7粘接的中央部5a;以及将载体板3的第1面3a的外缘部等包覆的外缘部5b。也就是说,工件7粘接在载体板3的第1面3a的除外缘部以外的区域。另外,该外缘部5b的一部分粘固于载体板3,不容易剥离。
在将载体板3从工件7剥离而去除时,临时粘接层5的中央部5a分离成紧贴于载体板3侧的第1部分5c(参照图3的(C))以及紧贴于工件7侧的第2部分5d(参照图3的(C))。在从工件7剥离载体板3之前,使粘固于载体板3的外缘部5b的一部分与中央部5a分离,以便使该中央部5a适当地分离。
工件7例如也被称为封装面板或封装晶片等,该工件7包含:与临时粘接层5的中央部5a接触的布线层(RDL)(未图示);与布线层接合的多个器件芯片9;以及对各器件芯片9进行密封的模制树脂层11。该工件7例如构成为与载体板3同样的平板状。
另外,该工件7的从第1面(正面)7a侧(与临时粘接层5相反的一侧)观察的尺寸比载体板3的从第1面3a侧或第2面3b侧观察的尺寸小。而且,工件7的厚度例如为1.5mm以下,代表地为0.6mm。
另外,工件7的第1面7a侧可以利用磨削等方法进行加工。另外,在工件7内相邻的器件芯片9之间的区域内设定分割预定线。例如沿着任意的分割预定线将工件7切断,从而将工件7分割成分别包含一个或多个器件芯片9的多个工件片。
并且,若沿着所有分割预定线将工件7(或工件片)切断,则得到与各器件芯片9对应的多个封装器件。不过,对于工件7的材质、形状、构造、大小等没有特别限制。例如工件7也有时主要由布线层构成,不包含器件芯片9或模制树脂层11等。
在本实施方式的载体板的去除方法中,首先将临时粘接层5的外缘部5b的至少一部分去除(临时粘接层去除工序)。图2的(A)是示出将临时粘接层5的外缘部5b的一部分去除的情况的剖视图,图2的(B)是示出临时粘接层5的外缘部5b的一部分被去除的状态的剖视图。
在将外缘部5b的一部分去除时,使用图2的(A)所示的激光加工装置2。激光加工装置2具有用于对复合基板1进行保持的卡盘工作台4。卡盘工作台4例如包含由以不锈钢为代表的金属材料形成的圆筒状的框体6以及由多孔质材料形成且配置于框体6的上部的保持板8。
保持板8的上表面成为用于对复合基板1的载体板3进行吸引、保持的保持面8a。该保持板8的下表面侧经由设置于框体6的内部的流路6a及阀10等而与吸引源12连接。因此,若将阀10打开,则能够使吸引源12的负压作用于保持面8a。
卡盘工作台4(框体6)与电动机等旋转驱动源(未图示)连结,通过该旋转驱动源所产生的力,绕与上述保持面8a大致垂直的旋转轴旋转。另外,卡盘工作台4(框体6)通过移动机构(未图示)进行支承,在与上述保持面8a大致平行的加工进给方向和与保持面8a大致平行且与加工进给方向大致垂直的分度进给方向上移动。
如图2的(A)所示,在卡盘工作台4的上方配置有激光照射单元14。激光照射单元14包含:激光振荡器(未图示),其能够生成被临时粘接层5吸收的波长的激光束16;以及光学系统(未图示),其将该激光束16向卡盘工作台4所保持的复合基板1引导。
在将外缘部5b的一部分去除时,首先利用卡盘工作台4对复合基板1的载体板3进行保持,使工件7向上方露出。即,如图2的(A)所示,使载体板3的第2面3b与卡盘工作台4的保持面8a接触之后,将阀10打开而使吸引源12的负压作用于保持面8a。
在利用卡盘工作台4对复合基板1进行了保持之后,对向上方露出的临时粘接层5的外缘部5b照射激光束16,如图2的(B)所示,将该外缘部5b的一部分5e去除。具体而言,一边从激光照射单元14的激光束射出口向下方照射激光束16,一边使该激光照射单元14的激光束射出口沿着临时粘接层5的外缘部5b的一部分5e相对地移动。
其中,作为去除对象的外缘部5b的一部分5e例如以围绕临时粘接层5的中央部5a的方式设置于与该临时粘接层5(或载体板3)的外缘的距离为1mm~3mm的位置。即,将围绕中央部5a的环状的区域设定为去除对象。不过,该外缘部5b的一部分5e的位置没有特殊限制。另外,照射激光束16的条件在能够通过烧蚀加工将外缘部5b的一部分5e去除的范围内进行调整。
由此,如图2的(A)所示,向外缘部5b的一部分5e从上方照射激光束16,将该外缘部5b的一部分5e去除。也就是说,粘固于载体板3的外缘部5b的一部分与中央部5a分离,从而能够将载体板3容易地从工件7剥离。另外,本实施方式中,仅将外缘部5b的一部分5e去除,但也可以将外缘部5b全部去除。
当去除了临时粘接层5的外缘部5b的一部分5e之后,从上方对复合基板1的工件7进行保持(保持工序)。图3的(A)是示出从上方对工件7进行保持的情况的剖视图。在从上方对工件7进行保持时,使用图3的(A)等所示的剥离装置22。剥离装置22具有用于从上方对复合基板1的工件7进行保持的保持单元24。
在保持单元24的下部形成有具有与工件7的第1面7a相同程度的大小的保持面24a。吸引源(未图示)经由流路(未图示)及阀(未图示)等与该保持面24a连接。因此,若将阀打开,则对保持面24a作用吸引源的负压。另外,保持单元24通过升降机构(未图示)进行支承,在铅垂方向上移动。
在从上方对工件7进行保持时,如图3的(A)所示,例如在将工件7定位于载体板3的上方的状态下,使保持单元24的保持面24a与该工件7的第1面7a接触。并且,将阀打开而使吸引源的负压作用于保持面24a。由此,通过保持单元24从上方对复合基板1的工件7进行保持。
另外,在本实施方式中,使工件7的第1面7a与保持单元24的保持面24a直接接触,但也可以在工件7的第1面7a与保持单元24的保持面24a之间夹设多孔片等。由此,能够防止由于与保持面24a的接触所导致的工件7的损伤或污染等。
在从上方对工件7进行了保持之后,对载体板3的外缘部施加朝下的力,从而将载体板3从工件7剥离而去除(载体板去除工序)。图3的(B)是示出向载体板3的外缘部施加朝下的力的情况的剖视图,图3的(C)是示出从工件7去除了载体板3的状态的剖视图。在从工件7剥离而去除载体板3时,继续使用剥离装置22。
如图3的(B)所示,在保持单元24的侧方,在与该保持单元24所保持的复合基板1的载体板3的外缘部相当的位置配置有棒状的推压部件26。
推压部件26例如通过与使保持单元24移动的升降机构不同的升降机构(未图示)进行支承,相对于保持单元24独立地在铅垂方向上移动。
在从工件7去除载体板3时,首先使保持单元24和推压部件26一起向上方移动,提起保持单元24所保持的复合基板1。即,使载体板3的第2面3b侧向下方露出。接着,在保持着保持单元24的位置的状态下使推压部件26向下方移动,使该推压部件26的下端与载体板3的外缘部接触。即,通过推压部件26向载体板3的外缘部施加朝下的力。
如上所述,复合基板1的工件7通过保持单元24从上方进行保持。因此,当利用推压部件26向载体板3的外缘部施加朝下的力时,载体板3以临时粘接层5为界而从工件7剥离、落下。即,载体板3向从工件7离开的方向移动。在本实施方式中,使粘固于载体板3的外缘部5b的一部分从中央部5a分离,因此能够从工件7容易地剥离而去除载体板3。
如上所述,在本实施方式的载体板的去除方法中,向临时粘接层5照射被临时粘接层5吸收的波长的激光束16而将临时粘接层5的外缘部5b的至少一部分5e去除,从而使临时粘接层5的外缘部5b的粘固于载体板3的部分从对载体板3与工件7进行粘接的临时粘接层5的中央部5a分离。
由此,利用保持单元24从上方对工件7进行保持并向载体板3的外缘部施加朝下的力,从而能够不受外缘部5b的粘固于载体板3的部分的影响而将载体板3容易地从工件7去除。另外,与施加至载体板3的外缘部的朝下的力一起利用作用于载体板3的重力,因此在从工件7去除载体板3时无需较大的力。
另外,本发明不限于上述实施方式的记载,可以进行各种变更并实施。例如在上述实施方式中,利用从上方的工件7侧照射激光束16的方法将外缘部5b的至少一部分5e去除,但也可以利用从下方的载体板3侧照射激光束的方法将外缘部5b的至少一部分5e去除。其中,在该情况下,使用透过载体板3并被临时粘接层5吸收的波长的激光束。
同样地,在上述实施方式中,利用向临时粘接层5照射激光束16的方法将临时粘接层5的外缘部5b的至少一部分5e去除,但也可以利用其他方法将外缘部5b的至少一部分5e去除。例如,可以利用使切削刀具等切入临时粘接层5的方法将外缘部5b的至少一部分5e去除。
另外,例如,上述实施方式的推压部件26构成为能够与保持单元24独立地在铅垂方向上移动,但该推压部件26只要至少能够相对于保持单元24相对地移动即可。
因此,例如可以将推压部件26固定于剥离装置22的壳体(未图示)等而仅使保持单元24移动,从而使推压部件26相对于保持单元24相对地移动。另外,在上述实施方式中,使用一个推压部件26,但也可以使用多个推压部件26。
另外,在将载体板3从工件7剥离而去除时,也可以对在载体板3与工件7之间露出的临时粘接层5吹送流体。图4的(A)是示出利用第1变形例的载体板的去除方法从工件7剥离载体板3的情况的剖视图。其中,第1变形例的载体板的去除方法的大部分与上述实施方式的载体板的去除方法相同。由此,在下文中,主要对不同点进行说明,省略了相同的部分的详细说明。
如图4的(A)所示,在该第1变形例中使用的剥离装置22的保持单元24的侧方配置有喷嘴32。在喷嘴32上经由流路(未图示)及阀(未图示)等而连接有流体34的提供源(未图示)。
在从该喷嘴32向在载体板3与工件7之间露出的临时粘接层5吹送流体34之后向载体板3的外缘部施加向下的力,或一边向在载体板3与工件7之间露出的临时粘接层5吹送流体34一边利用推压部件26向载体板3的外缘部施加向下的力,从而能够从工件7更容易地剥离载体板3。作为向载体板3与工件7之间吹送的流体34,例如可以使用空气或水等。不过,对于流体34的种类等没有特别限制。
另外,在从工件7剥离而去除载体板3时,可以使载体板3和工件7沉入至液体中。图4的(B)是示出利用第2变形例的载体板的去除方法从工件7剥离载体板3的情况的剖视图。另外,第2变形例的载体板的去除方法的大部分与上述实施方式的载体板的去除方法相同。由此,在下文中,主要对不同点进行说明,省略了相同的部分的详细说明。
如图4的(B)所示,在该第2变形例中使用的剥离装置22的保持单元24的下方配置有能够收纳载体板3和工件7的大小的槽42。在槽42内积存有水等液体44。
当在使载体板3和工件7沉入至槽42内的液体44中的状态下,利用推压部件26向载体板3的外缘部施加朝下的力而从工件7剥离载体板3时,从工件7剥离的载体板3在液体44中下落。其结果是,与使载体板3在空气中下落的情况相比,随着下落的冲击变小,能够防止载体板3的破损、剥离装置22的振动等。
另外,可以在该液体44中包含表面活性剂。作为液体44中所包含的表面活性剂,可以使用容易进入至临时粘接层5的阴离子表面活性剂或阳离子表面活性剂等。这样,通过在液体44中包含容易进入至临时粘接层5的表面活性剂,能够从表面活性剂所进入的区域容易分离临时粘接层5,从而能够从工件7更容易地去除载体板3。
另外,在第2变形例中,在使载体板3和工件7沉入至液体44中之后,利用推压部件26向载体板3的外缘部施加朝下的力时,可以对该推压部件26赋予超声波等振动。具体而言,一边将超声波等振动赋予至推压部件26,一边利用该推压部件26向载体板3的外缘部施加朝下的力。在该情况下,通过从推压部件26传递的振动的作用,能够从工件7更容易地剥离载体板3。
同样地,在使载体板3和工件7沉入至液体44中之后,利用推压部件26向载体板3的外缘部施加朝下的力时,可以对液体44赋予超声波等振动。具体而言,一边将超声波等振动赋予至液体44,一边利用推压部件26向载体板3的外缘部施加朝下的力。在该情况下,通过从液体44传递的振动的作用,能够从工件7更容易地剥离载体板3。
另外,也可以对第2变形例进一步组合第1变形例。即,也可以在使载体板3和工件7沉入至液体44中之前或之后,向在载体板3与工件7之间露出的临时粘接层5吹送流体。在该情况下,也能够从工件7更容易地剥离载体板3。
除此以外,上述实施方式的构造、方法等只要不脱离本发明的目的的范围,则可以适当变更并实施。
Claims (8)
1.一种载体板的去除方法,当从借助设置在载体板的整个正面上的临时粘接层而与该载体板的该正面的除外缘部以外的区域粘接的工件将该载体板去除时使用该方法,其中,
该载体板的去除方法包含如下的工序:
临时粘接层去除工序,将该临时粘接层的外缘部的一部分或全部去除;
保持工序,在去除了该临时粘接层的该外缘部的一部分或全部之后,利用保持单元从上方对该工件进行保持;以及
载体板去除工序,在从上方对该工件进行了保持的状态下,利用推压部件从该载体板的该正面侧向该载体板的该外缘部施加朝下的力而使该载体板向从该工件离开的方向移动,从而将该载体板从该工件去除。
2.根据权利要求1所述的载体板的去除方法,其中,
在该载体板去除工序中,在对该工件与该载体板之间吹送流体之后向该载体板的该外缘部施加朝下的力,或一边对该工件与该载体板之间吹送流体一边向该载体板的该外缘部施加朝下的力,将该载体板从该工件去除。
3.根据权利要求1所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉入至液体中的状态下,向该载体板的该外缘部施加朝下的力。
4.根据权利要求3所述的载体板的去除方法,其中,
在该液体中包含表面活性剂。
5.根据权利要求2所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉入至液体中的状态下,向该载体板的该外缘部施加朝下的力。
6.根据权利要求5所述的载体板的去除方法,其中,
在该液体中包含表面活性剂。
7.根据权利要求3至6中的任意一项所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉入至该液体中的状态下,一边对该推压部件赋予振动一边向该载体板的该外缘部施加朝下的力。
8.根据权利要求3至6中的任意一项所述的载体板的去除方法,其中,
在该载体板去除工序中,在使该工件和该载体板沉入至该液体中的状态下,一边对该液体赋予振动一边向该载体板的该外缘部施加朝下的力。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220310551A1 (en) * | 2021-03-24 | 2022-09-29 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104280972A (zh) * | 2013-07-10 | 2015-01-14 | 精工爱普生株式会社 | 电泳装置、其制造方法以及电子设备 |
JP2015225881A (ja) * | 2014-05-26 | 2015-12-14 | 株式会社ディスコ | テープの貼着方法 |
JP2016051779A (ja) * | 2014-08-29 | 2016-04-11 | 株式会社ディスコ | ウエーハの貼り合わせ方法及び貼り合わせワークの剥離方法 |
CN105931956A (zh) * | 2015-02-27 | 2016-09-07 | 株式会社迪思科 | 晶片分割方法 |
CN106024602A (zh) * | 2015-03-27 | 2016-10-12 | 株式会社迪思科 | 晶片的加工方法 |
CN108122735A (zh) * | 2016-11-30 | 2018-06-05 | 株式会社迪思科 | 晶片的加工方法 |
JP2018195770A (ja) * | 2017-05-22 | 2018-12-06 | 株式会社ディスコ | ウェーハの加工方法 |
CN108962738A (zh) * | 2017-05-25 | 2018-12-07 | 株式会社迪思科 | 晶片的加工方法 |
CN108987268A (zh) * | 2017-05-31 | 2018-12-11 | 株式会社迪思科 | 晶片的加工方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066229A (en) * | 1997-07-10 | 2000-05-23 | Sony Corporation | Method of recycling disk recording medium and apparatus for recovering metal reflective film |
JP4271409B2 (ja) | 2002-05-22 | 2009-06-03 | リンテック株式会社 | 脆質材料の加工方法 |
JP4364535B2 (ja) * | 2003-03-27 | 2009-11-18 | シャープ株式会社 | 半導体装置の製造方法 |
JP2006135272A (ja) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | 基板のサポートプレート及びサポートプレートの剥離方法 |
JP4721828B2 (ja) * | 2005-08-31 | 2011-07-13 | 東京応化工業株式会社 | サポートプレートの剥離方法 |
JP4965485B2 (ja) * | 2008-02-29 | 2012-07-04 | 東京応化工業株式会社 | 処理液浸透ユニットおよび処理装置 |
JP2010010207A (ja) * | 2008-06-24 | 2010-01-14 | Tokyo Ohka Kogyo Co Ltd | 剥離装置および剥離方法 |
US8950459B2 (en) * | 2009-04-16 | 2015-02-10 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
JP2010283097A (ja) | 2009-06-04 | 2010-12-16 | Lintec Corp | 両面接着シート |
US9847243B2 (en) | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
EP2381464B1 (de) * | 2010-04-23 | 2012-09-05 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat |
US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
JP5580805B2 (ja) | 2011-10-21 | 2014-08-27 | 東京エレクトロン株式会社 | 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 |
JP6216727B2 (ja) * | 2014-05-08 | 2017-10-18 | 東京応化工業株式会社 | 支持体分離方法 |
JP6529321B2 (ja) | 2015-04-14 | 2019-06-12 | 株式会社ディスコ | デバイスパッケージの製造方法 |
KR101898121B1 (ko) | 2015-10-22 | 2018-09-12 | 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 | 워크피스 처리 방법 및 그러한 방법을 위해 설계된 장치 |
KR102607483B1 (ko) | 2017-12-19 | 2023-11-29 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템, 기판 처리 방법 및 컴퓨터 기억 매체 |
-
2019
- 2019-08-26 JP JP2019153398A patent/JP7262904B2/ja active Active
-
2020
- 2020-07-14 KR KR1020200086677A patent/KR20210024961A/ko not_active Application Discontinuation
- 2020-08-04 SG SG10202007447RA patent/SG10202007447RA/en unknown
- 2020-08-20 CN CN202010841868.XA patent/CN112435950A/zh active Pending
- 2020-08-25 DE DE102020210750.5A patent/DE102020210750B4/de active Active
- 2020-08-26 US US17/003,462 patent/US10926524B1/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104280972A (zh) * | 2013-07-10 | 2015-01-14 | 精工爱普生株式会社 | 电泳装置、其制造方法以及电子设备 |
JP2015225881A (ja) * | 2014-05-26 | 2015-12-14 | 株式会社ディスコ | テープの貼着方法 |
JP2016051779A (ja) * | 2014-08-29 | 2016-04-11 | 株式会社ディスコ | ウエーハの貼り合わせ方法及び貼り合わせワークの剥離方法 |
CN105931956A (zh) * | 2015-02-27 | 2016-09-07 | 株式会社迪思科 | 晶片分割方法 |
CN106024602A (zh) * | 2015-03-27 | 2016-10-12 | 株式会社迪思科 | 晶片的加工方法 |
CN108122735A (zh) * | 2016-11-30 | 2018-06-05 | 株式会社迪思科 | 晶片的加工方法 |
JP2018195770A (ja) * | 2017-05-22 | 2018-12-06 | 株式会社ディスコ | ウェーハの加工方法 |
CN108962738A (zh) * | 2017-05-25 | 2018-12-07 | 株式会社迪思科 | 晶片的加工方法 |
CN108987268A (zh) * | 2017-05-31 | 2018-12-11 | 株式会社迪思科 | 晶片的加工方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220310551A1 (en) * | 2021-03-24 | 2022-09-29 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus |
US11658147B2 (en) * | 2021-03-24 | 2023-05-23 | Samsung Electronics Co., Ltd. | Semiconductor manufacturing apparatus |
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