CN1110091C - 凸点电极间无短路且与电路板分离的半导体器件及制造工艺 - Google Patents

凸点电极间无短路且与电路板分离的半导体器件及制造工艺 Download PDF

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CN1110091C
CN1110091C CN98100992A CN98100992A CN1110091C CN 1110091 C CN1110091 C CN 1110091C CN 98100992 A CN98100992 A CN 98100992A CN 98100992 A CN98100992 A CN 98100992A CN 1110091 C CN1110091 C CN 1110091C
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circuit board
bump electrode
electrode
pad electrode
semiconductor chip
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Expired - Fee Related
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CN98100992A
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CN1198011A (zh
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樋野滋一
池上五郎
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Renesas Electronics Corp
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NEC Corp
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Abstract

通过扯断导电丝(15)，在半导体片(10)上形成凸点电极(10e)，以便暴露新鲜金属，通过暴露于离子束或原子束(18)，清洁电路板(11)上的焊盘电极(11e’)；在将凸点电极焊接于焊盘电极上时，将凸点电极加热到低于该金属熔点的某一温度，并压在焊盘电极上，由此防止凸点电极发生所不希望的短路。

Description

凸点电极间无短路且与电路板分离 的半导体器件及制造工艺
技术领域
本发明涉及一种半导体器件安装板，特别涉及一种凸点电极间没有短路且与印刷电路板分离的半导体器件及其制造工艺。
背景技术
随着电子元件日益多功能化，集成密度增加。另一方面，一直存在着按比例缩小的需求。一种方法是不经过合成树脂的密封直接将半导体裸芯片安装于印刷电路板上。
日本未审查特许公开平3-171643公开了一个典型的例子。图1展示的是利用公开于此日本未审查特许公开中的现有工艺制造的安装于印刷电路板2上的半导体片1。
尽管图1未示出铝层，但半导体衬底1a上形成有铝层，且铝层被含铬、铜和金的复合金属底层覆盖。底层上形成有共熔焊料构成的凸点电极1b。在非氧化气氛中加热半导体衬底1a，共熔焊料熔化，表面张力使熔化的共熔焊料形成球形。将熔化的共熔焊料骤冷，由此通过共熔现象将球形共熔焊料片形成凸点电极1b。
另一方面，印刷电路板2在绝缘板2b上有焊盘电极2a。半导体片1与印刷电路板相对，经由图2A-2C所示的现有技术方法，凸点电极1b焊接到焊盘电极2a上。
首先，如图2A所示，准备半导体片1和印刷电路板2。将半导体片1和印刷电路板2放置于表面活化室3内。表面活化室3内建立真空，并引入氩气。尽管未示出，但表面活化室3内设有源枪，源枪由氩气产生原子束3a。原子束3a辐射半导体片1和印刷电路板2，去掉凸点电极1b和焊盘电极2a上的自然氧化膜和污物。由此清洁凸点电极1b和焊盘电极2a，并因此活化表面。
完成表面活化后，从表面活化室3内取出半导体片1和印刷电路板2，传送至焊接室4。焊接室4内建立非氧化气氛。将半导体片1反转，使凸点电极1b与焊盘电极2a相对而置。使凸点电极1b与焊盘电极2a接触，并使凸点电极1b压住焊盘电极2a。
首先将凸点电极1b加热到低于焊料熔化温度的某温度。于是，凸点电极1b因塑性形变暂时与焊盘电极2a连接。暂时连接后，将凸点电极1b加热至熔化温度以上，焊接到焊盘电极2a上。于是，将半导体片1就安装到了印刷电路板2上。冷却所得结构，并从焊接室4内取出。所得结构或现有技术的半导体器件具有安装于印刷电路板上的半导体片1，如图1所示。
现有技术的半导体器件和现有工艺存在以下问题。在凸点电极1b压住焊盘电极2a并被加热时，熔化的共熔焊料从相关焊盘电极2a侧向延伸，容易发生并接。这会造成所不希望的短路。即使熔化的共熔焊料没有并接，凸点电极1b也会变得彼此靠近，容易发生放电。所以现有技术半导体器件固有的第一个问题是凸点电极1b间的短路或低放电电压。
另一问题是，由于凸点电极1b和焊盘电极2a间的焊接强度较弱，半导体片1和印刷电路板2会发生不希望的分离。尤其是在温度频繁变化的环境中安装印刷电路板2的情况下，在凸点电极1b和焊盘电极2a间的界面会发生所不希望的龟裂，半导体片1容易与印刷电路板2分离。
现有技术固有的第一个问题是可控性很差。半导体片1在非氧化气氛中安装于印刷电路板2上。如果在暂时连接期间凸点电极1b与焊盘电极2a发生偏移，不容易进行修正，这是因为修正也应在不改变非氧化气氛的情况下进行。
现有技术方法的另一问题是很高的半导体集成电路器件生产成本。表面活化室3要大得足以容纳半导体片1和印刷电路板2，焊接室4因要安装各种机构而很宽。很大的表面活化室3耗费了大量氩气，很宽的焊接室4也耗费了大量非氧化气体。由此，大量气体的使用导致了成本增加。
发明内容
因此，本发明的重要目的是提供一种不发生短路、低放电电压和分离的半导体器件。
本发明另一重要目的是提供一种制造半导体器件的工艺，提高可控性，降低工艺成本。
根据本发明的一个方面，提供一种半导体器件，包括：半导体片，包括半导体衬底和由第一材料构成从半导体衬底主表面突起的凸点电极；电路板，包括绝缘基片、形成于绝缘基片上的导电图形，以及叠置于导电图形的某区域上的焊盘电极，所说焊盘电极具有第二材料层和由形成于第一材料和第二材料间的合金构成的中间层，用于焊接突点电极与焊盘电极。
根据本发明的另一方面，提供一种制造半导体器件的工艺，包括以下步骤：a)准备具有第一材料构成的凸点电极的半导体片以及电路板，电路板具有导电图形和叠置于导电图形的某区域上且有第二材料层的焊盘电极；从凸点电极上强行提拉金属丝，切断金属丝，以便暴露新鲜的第一材料；对焊盘电极进行离子和原子辐射中的一种辐射，以便去掉其上的污物；b)对准凸点电极与焊盘电极；及c)在加热的条件下，将凸点电极压住焊盘电极，以便焊接凸点电极与焊盘电极。
附图说明
从以下结合附图的说明中可以更清楚本发明半导体器件和工艺的特点及优点，其中：
图1是安装于印刷电路板上的半导体裸芯片的剖面图；
图2A-2C是展示公开于日本未审查特许公开平3-171643中的制造半导体集成电路的现有技术工艺的示图；
图3是本发明半导体器件结构的剖面图；
图4A-4D是展示制造图3所示半导体器件的工艺的剖面图；
图5是展示形成于半导体衬底上的凸点电极的剖面图。
具体实施方式
参见图3，实施本发明的半导体器件主要包括半导体片10、电路板11、和填充半导体片10和电路板11间的间隙的粘性合成树脂12。
半导体片10包括半导体衬底10a和绝缘层10b。半导体衬底10a上形成有大量电路元件(未示出)，这些元件通过导电布线(未示出)选择地连接。电路元件和导电布线构成集成电路。导电布线上覆盖有绝缘层10b，绝缘层10b用于防止集成电路被沾污。接触窗口10c形成于绝缘层10b中，导电布线暴露于接触窗口10c中。铝焊盘10d形成于接触窗口10c中，铝焊盘10d提供克服电流的合适电阻。
半导体片10还包括附着于铝焊盘10d上的凸点电极10e。这种情况下，凸点电极10e由金构成。凸点电极10e形成于铝焊盘10d上，对此以后将作说明。
电路板11包括绝缘基片11a和形成于绝缘基片11a主表面上的铜导电图形11b。导电图形11b的预定区域上分别覆盖有硬金属膜11c，这层膜上又依次覆盖有金膜11d。硬金属膜11c可以由镍构成。每个硬金属膜11c和金在其间构成金-镍合金层11e，每个硬金属膜11c和每个金层11d作为一个整体构成焊盘电极11e’。导电图形11b的其余表面和绝缘基片11a的其余表面上覆盖了抗蚀剂层11f。
凸点电极10e分别焊接到焊盘电极11e’上，集成电路通过凸点电极10e和焊盘电极11e’与导电图形11b电连接。粘性合成树脂12填充于半导体片10的下表面和电路板11之间的间隙中。凸点电极10e和焊盘电极11e’间的结合力和粘性合成树脂12的粘合力固定半导体片10与电路板11。
图3所示半导体器件按如下步骤制造。图4A-4D展示了制造图3所示半导体器件的工艺。该工艺首先是准备半导体片10和电路板11，如图4A所示。该领域技术人员已熟知如何在半导体晶片上制造集成电路，及如何将半导体晶片分离成半导体片10，所以以下只参照图5说明如何形成凸点电极10e。
图5展示了刚好形成于铝焊盘10d上的一个凸点电极10e。具体地，半导体衬底10a传送到一种球焊机，铝焊盘10d置于毛细管13之下。毛细管13可以在箭头AR1所示方向往复运动，通孔14形成于毛细管13中。导电金属丝15穿过通孔14，熔化导电金属丝15的引出端便形成了焊球。
毛细管13向下移动，把焊球压在铝焊盘10d上。在毛细管13把焊球压在铝焊盘10d上的同时，在焊球上施加超声振荡。焊球塌陷，形成凸点电极10e的接触部分10f。接触部分10f焊接于铝焊盘10d上。焊接后，毛细管13提起，导电金属丝15被强行提拉。然后，切断导电金属丝15，尾部10g留在接触部分10f，如图5所示。新鲜的金属暴露于尾部10g，该暴露表面上没有生长自然氧化物。因此，不需要对凸点电极10e进行清洁处理。半导体片10保存于非氧化气氛中。
导电金属丝15由直接焊接于铝焊盘10d上的金属构成。这种情况下，导电金属丝15由金构成，直径为25微米。接触部分10f直径为80微米，高为25微米。在接触部分10f的界面处，尾部10g类似于回转抛物面，从铝焊盘10d算起其高度为75微米，直径为25微米。
现回到图4A，按如下步骤制造电路板11。将18微米厚的铜箔层叠于绝缘基片11a的主表面上，并选择地腐蚀，由此形成于导电图形11b中。导电图形11b和绝缘基片11a上覆盖抗蚀材料，并选择地去掉抗蚀材料层，从而在抗蚀层11f中形成窗口11g。导电图形11b的预定区域暴露于窗口11g，并且镀敷例如镍等硬金属。以此方式，所说预定区域首先覆盖了硬金属膜11c。随后，分别在硬金属膜11c上层叠金膜11d，从而形成焊盘电极11e’。硬金属膜11c厚3-5微米，金膜11d厚0.03-0.05微米。
然后，如图4B所示，电路板11放入室16中，用真空泵排空室16。因为室16只容纳电路板11，所以不象表面活化室3那么大。室16中引入氩气，源枪SG由氩气产生原子束或离子束18。原子束或离子束18辐射到金膜11d上，从金膜11d上去掉少许表面部分。结果，去掉了金膜11d表面上的污物，金膜11d变清洁。电路板11保存于非氧化气氛中。
电路板11从非氧化气氛放置于支撑台19上，真空盘20将半导体片10从非氧化气氛中移到电路板11之上，如图4C所示。真空盘20和支撑台19在大气中工作。对准凸点电极10e和焊盘电极11e’。加热单元21/22加热支撑台19和真空盘20，凸点电极10e和焊盘电极11e’分别被加热到150℃-300℃和60℃-120℃。
真空盘20如图4D中箭头AR2所示向下移动，将凸点电极10e压在金膜11d上。20-30克的负载加到每个凸点电极10e上。凸点电极10e塑性形变，穿透金膜11d。凸点电极10e与镍膜11c接触，真空盘20继续对凸点电极10e加压10-150秒。凸点电极10e的金与镍合金，金-镍合金很强地将凸点电极焊接于镍膜11c上。这是因为尾部10g由没有氧化物和污物的新鲜金属构成，且经由原子束或离子束辐射去掉了金膜11d上的污物的缘故。凸点电极10e不再加热熔化，因此不再发生熔化的金属从焊盘电极11e’上流出的问题。所以凸点电极10e间没有发生短路。以此方式得到了倒装焊接结构。
提起真空盘20，将半导体片10与电路板11一起进行传送。粘性合成树脂注入到半导体片10和电路板11之间的间隙中，构成如图3所示的粘性合成树脂层12。粘性合成树脂层12增强了半导体片10和电路板11间的接合强度。
本发明人对本发明工艺进行了评价。首先，本发明人强行从电路板11上剥离半导体片11。镍膜11c与导电图形11b分离，但镍膜仍很强地焊接于凸点电极10e上。
本发明人将凸点电极10e和镍膜11c的界面暴露，利用俄歇电子波谱分析界面处的材料。该材料为金-镍合金。
从以上的说明可知，由于凸点电极10e不经加热到熔点以上便可以焊接到导电图形11b上，所以半导体器件的凸点电极10e之间没有短路。而且，在焊接期间产生金-镍合金，凸点电极10e很强地焊接于镍膜11c上。所以，即使半导体器件在环境温度频繁改变的环境中进行安装，半导体片10也不会与电路板11分离。粘性合成树脂层12增强了半导体片10和电路板11间的接合强度。
工艺成本比现有技术工艺降低。只对金膜11d进行原子或离子铣。室16窄于表面活化室3，氩气消耗量少于现有技术工艺。焊接步骤在大气中进行。即使凸点电极10e与金膜11d未对准，操作者可以容易地修正位置。所以可控性提高。
尽管展示和说明了本发明的特殊实施例，但显然，所属领域的技术员在不背离本发明精神和范围的情况下可以做出各种改变和变形。
例如，可以从本发明半导体器件中去掉粘性合成树脂层12。
凸点电极10e可以在半导体晶片分成小片之前形成。
导电金属丝15可以由铜构成。此种情况下，可以在铝焊盘10d上形成保护层，以避免铝与铜相互扩散。
绝缘基片11a可以为刚性或柔性的。如果柔性膜用于电路板11，则在焊接步骤期间，柔性膜弹性形变。在焊接步骤后，柔性膜恢复其先前的形态，促使焊盘电极11e’压向凸点电极10e。
在将凸点电极10e压住金/镍膜11c/11d的同时，可以在凸点电极10e和金/镍膜11c/11d原界面施加超声振荡。超声振荡去掉了界面处的污物，允许加热器单元22降低半导体片10的温度。超声振荡还缩短了焊接用时间。如果尾部10g在焊接前调到靶的高度，可以使超声振荡更有效。
硬金属定义为“与凸点电极的金属合金且比凸点电极的金属硬的导电金属”。从这一方面看，可以用钛、铬、钯、和它们的合金作硬金属。

Claims (10)

1.一种半导体器件，包括：
半导体片(10)，包括半导体衬底(10a)和由第一材料构成从半导体衬底主表面突起的凸点电极(10e)；及
电路板(11)，包括绝缘基片(11a)、形成于所说绝缘基片上的导电图形(11b)、叠置于所说电图形的某区域上的焊盘电极，
其特征在于，所说焊盘电极具有第二材料层(11c)，其中中间层(10e)由形成于所说第一材料和第二材料间的合金构成，以便接合所说凸点电极与所说焊盘电极。
2.根据权利要求1的半导体器件，其特征在于，所说第一材料和所说第二材料分别是金和镍。
3.根据权利要求1的半导体器件，还包括插在所说半导体片和所说电路板间的粘性合成树脂层(12)，用以增强其间的粘合力。
4.一种制造半导体器件的工艺，包括以下步骤：
a)准备具有第一材料构成的凸点电极(10e)的半导体片(10)和电路板(11)，电路板具有导电图形(11b)和叠置于所说导电图形的某区域上且有第二材料层的焊盘电极(11e’)；从凸点电极上强行提拉导电丝(15)，切断导电丝(15)，以便暴露新鲜的第一材料；对所说焊盘电极进行离子和原子辐射中的一种辐射(18)，以便去掉其上的污物；
b)对准所说凸点电极与所说焊盘电极；及
c)在加热的条件下将所说凸点电极压住所说焊盘电极，以便所说焊接凸点电极与所说焊盘电极接合。
5.根据权利要求4的工艺，其特征在于，所说凸点电极(10e)被加热到低于所说第一材料熔点以下的某温度。
6.根据权利要求4的工艺，其特征在于，所说凸点电极(10e)经由以下子步骤形成：
a-1)制备具有引出端的所说导电丝(15)，
a-2)将所说引出端焊接于所说半导体片的导电焊盘(10d)上，及
a-3)提拉所说导电丝，以便扯断所说导电丝。
7.根据权利要求4的工艺，其特征在于，在所说步骤a)和所说步骤b)之间，所说半导体片和所说电路板存放于非氧化气氛中。
8.根据权利要求4的工艺，其特征在于，所说第一材料和所说第二材料分别是金和镍。
9.根据权利要求4的工艺，其特征在于，在所说步骤c)，超声振荡施加于每个凸点电极和每个焊盘电极之间的界面。
10.根据权利要求4的工艺，还包括步骤d)，在所说半导体片和所说电路板之间填充粘性合成树脂(12)，以便增强其间的粘合力。
CN98100992A 1997-03-31 1998-03-31 凸点电极间无短路且与电路板分离的半导体器件及制造工艺 Expired - Fee Related CN1110091C (zh)

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