CN1164158C - 用于半导体芯片组件的多层电路板 - Google Patents

用于半导体芯片组件的多层电路板 Download PDF

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CN1164158C
CN1164158C CNB991191692A CN99119169A CN1164158C CN 1164158 C CN1164158 C CN 1164158C CN B991191692 A CNB991191692 A CN B991191692A CN 99119169 A CN99119169 A CN 99119169A CN 1164158 C CN1164158 C CN 1164158C
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circuit board
underboarding
trace layer
insulating barrier
layer
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CN1248882A (zh
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ƽ�g��ϣ
平沢宏希
小野辉生
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NEC Corp
Fuchigami Micro Co Ltd
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Abstract

一种用于半导体芯片组件的多层电路板，其包括衬底板、绝缘层、固定-电位引线层、通孔和金属层。该衬底板有主表面。绝缘层堆叠在衬底板的主表面上并有引线层形成。固定-电位引线层构成引线层部分。金属层填充在通孔中。与主表面接触的一绝缘层形成在该衬底板上，同时金属层下端与该衬底板的主表面接触。堆叠形成在绝缘层上与衬底板的主表面接触的其它绝缘层，同时金属层下端与一个绝缘层的固定-电位引线层的上表面接触。所述填充在所述通孔中的金属层是由铜制成。金被施加在填充通孔的所述铜金属层的底端。

Description

用于半导体芯片组件的多层电路板
技术领域
本发明涉及到一种用于半导体芯片组件的多层电路板，尤其是涉及到一种适合于半导体芯片组件高密度布线的多层电路板。
背景技术
最近，在一种用于半导体芯片组件的多层电路板中，该半导体芯片组件具有多个安装在引线框的印刷焊盘上的IC芯片。安装在引线框上IC芯片和多层电路板之间的电极、引线框以及半导体芯片组件板是通过冲击或者导线焊接来电连接的。
这种多层电路板主要是通过在一个陶瓷或同类型材料做衬底的板上形成一个铜与聚酰亚胺的薄膜多层电路来准备一个树脂多层板。
图7A和图7B显示一种用于半导体芯片组件的常规多层电路板的例子。图7A显示了整个结构，而图7B显示沿着图7A中线A-A的横截面。
如图7A所示，半导体芯片9与芯片元件8安装在用于半导体芯片组件的常规多层电路板11上。半导体芯片9和芯片元件8由焊接导线10、板表面的GND(地)线层14以及在板边缘到多层电路板11安装的主板GND接线端子(未示出)的金属部分12来连接。
在这种常规的电路板结构中，到GND端子的电流从半导体芯片9经过焊接线10、芯片元件8、GND引线层14、金属部分12以及引线13流向主板的GND端，如图7B箭头所示。通过到GND端电流的金属部分12形成在多层电路板11的外围部分。GND引线层14必须延伸到外围部分的金属部分12，这就延伸了GND引线层14。
在用于半导体芯片组件的常规多层电路板中，延长的GND引线层增加了GND引线层的电阻和阻抗，并且一个高于校准GND电位的电位不期望地加到该半导体芯片。该延长的GND引线层还增加了功率消耗。
发明内容
因此，本发明的基本目的是为了适合于高密度布线而缩短用于半导体芯片组件的多层电路板的GND引线层。
要达到上述目的，根据本发明在此提供一种用于半导体芯片组件的多层电路板，它包括：衬底板，其具有由金属材料制成的一个主表面，固定电位被施加给该主表面；绝缘层，其在所述衬底板的主表面上堆叠并具有形成在所述绝缘层表面上的引线层；固定-电位引线层，其构成在所述绝缘层上形成的引线层的一部分；一些形成在所述固定-电位引线层下面的通孔，以便通过所述绝缘层延伸；以及一些填充通孔的金属层，以致于使所述金属层的上端连接到所述固定-电位引线层的下表面，其中与所述衬底板主表面接触的所述一个绝缘层形成在所述衬底板上，而所述金属层的底端与所述衬底板的主表面接触，并且堆叠与所述衬底板主表面接触的形成在所述绝缘层上的其它绝缘层，同时所述金属层的下端与所述一绝缘层的所述固定-电位引线层的上表面接触，所述填充在所述通孔中的金属层是由铜制成，金被施加在填充通孔的所述金属层的底端。
附图说明
附图简要说明：
图1是一个根据本发明的实施例的显示用于半导体芯片组件的多层电路板的结构的截面图；
图2是一个根据本发明的实施例的显示用于半导体芯片组件的多层电路板中的电流到GND端流向的截面图；
图3A到3E是截面图，它们分别显示根据本发明制造用于半导体芯片组件的多层电路板的步骤，其中图3A显示准备材料的步骤，图3B显示在每层形成一个通孔的步骤，图3C显示用金属填充通孔的步骤，图3D显示形成一个引线模式的步骤，以及图3E显示堆叠/加压焊接步骤；
图4A与4B是截面图，它们分别显示根据本发明制造用于半导体芯片组件的多层电路板的连接方法中的一个例子，图4A显示加压焊接前的连接方法，而图4B显示加压焊接后的连接方法；
图5A与5B是截面图，它们分别显示根据本发明制造用于半导体芯片组件的多层电路板的连接方法中的另一个例子，图5A显示加压焊接前的连接方法，而图5B显示加压焊接后的连接方法；
图6是显示根据本发明的另一个实施例用于半导体芯片组件的多层电路板结构的截面图；
图7A与7B是显示一个已有技术的视图，图7A是显示已有技术的整个结构的透视图，图7B是一个沿图7A中线A-A的截面图，显示电流到GND端的流向。
具体实施方式
下面将参照附图详细地描述本发明的最佳实施例。
图1显示根据本发明一个实施例的用于半导体芯片组件的多层电路板的结构。这个多层电路板包括一个铜金属板作为衬底板1；有机树脂薄板作为两个绝缘层2和3；以及形成在绝缘层2和3上的铜引线层。形成在绝缘层2和3上的引线层包括一固定-电位引线层4。在这个实施例中，为了说明方便，该绝缘层是由两层形成。然而，即使该绝缘层由三层或者更多层形成，也可采用同样的结构。为了说明方便，只有固定-电位引线层4是作为形成在每个绝缘层上的引线层来举例说明的。
绝缘层2和3是由一种诸如聚酰亚胺之类的有机树脂构成的。该绝缘层2和3具有一些通孔5，用于彼此相互电连接固定-电位引线层4，以及电连接固定-电位引线层4和衬底板1。这些形成在绝缘层2和3上的通孔5是用金属层6填充来电连接各个层。在通孔5中填充金属层6的一个例子是通过利用铜箔作为电镀电极的电镀来准备电镀铜。具有绝缘层2的衬底板1连接到主板的GND端(未示出)，以及分别通过通孔5中的金属层6连接到各自引线层上的固定-电位引线层4。
多个芯片安装在具有这种结构的多层电路板的上表面以便构成一个半导体芯片组件(多-芯片组件：MCM)。具有多个芯片的MCM构成的半导体芯片组件安装在比如一个主板上。
在这个实施例中，衬底板1可以由一个引线框形成。
图2显示采用图1中所示多层电路板的半导体芯片组件。一个芯片元件8和半导体芯片9安装在多层电路板的上表面。应注意，图2中所示的多层电路板不是一一对应于图1中的结构。图2只显示在绝缘层2和3中形成的一个通孔5。
电流到GND端的流向将参考图2描述。如图2中箭头指向所示，到图1所示主板的GND端(未示出)的电流从半导体芯片9和芯片元件8流向固定-电位引线层4，然后通过形成在绝缘层2和3中的通孔5中金属层6直接流进衬底板1，并且从衬底板1流到主板的GND端。这个电流流向是与图7B所示已有技术的电流流向相比较。在已有技术中，固定-电位引线层4延伸到形成在多层电路板末端的金属化部分。相反，在本发明中，固定-电位引线层4通过通孔5直接连接到衬底板1，因此能够被大大地缩短。
图3A到3E显示根据本发明制造用于半导体芯片组件的多层电路板的步骤。图3A到3E显示制造图1所示多层电路板的一个例子。图3A显示准备材料的步骤，图3B显示在每层形成一个通孔的步骤，图3C显示用铜填充通孔的步骤，图3D显示形成一个包括固定-电位引线层的引线层的步骤，以及图3E显示堆叠/加压焊接步骤。
在本发明的制造方法中，在堆叠各个层之前，一些通孔和一个引线模式形成，而在形成引线模式之后，这些层被堆叠并且加压焊接。
如图3A中所示，铜金属板作为一个衬底板1，以及每个通过粘贴一个约50微米(μm)厚的聚酰亚胺(PI)薄膜21到约10-18μm厚的铜箔20形成的薄板被准备好。该PI薄膜21具有多层结构，在这个多层结构中，一个具有低热膨胀系数的PI薄膜夹在粘合PI薄膜之间以至于获得一个对金属的合适的接触强度和一与金属相配的热膨胀系数。
如图3B所示，通孔5形成在PI薄膜21中。此时，每个通孔5利用YAG(钇铝石榴石)激光或其它同类技术形成在PI薄膜21中一个预定的位置。在形成通孔5时，激光束直径减少到约10到40μm，因此适当地形成直径约50到100μm的通孔5。当该通孔5由等离子体蚀刻而不利用任何激光形成时，这种等离子体蚀刻采用一种由电镀与制图形Cu或Ni而形成约2到5μm厚的金属薄膜的掩膜技术。
如图3C所示，该通孔5是用金属层6填充的。在通孔5中填充的金属层6通过利用铜箔作为电镀电极的电镀来准备的电镀铜制成。当金属层6是要通过电镀填充通孔5时，金属层6的底端被调整到突出1到3μm。
如图3D所示，铜箔20被蚀刻以便在包括通孔5顶端的PI薄膜21上形成包括固定-电位引线层4的引线模式(引线层)。注意，为了说明方便，图3D只显示固定-电位引线层4。虽然没有显示，焊接镍与电镀金被分别在最上面的PI薄膜淀积约2到3μm和约0.2到0.5μm的厚度。
如图3E所示，具有引线层的两层PI薄膜21被对准并堆叠在衬底板1上，并且同时通过热压加压焊接。通过热压同时进行的加压焊接附着在引线层与PI薄膜上，并且PI薄膜彼此相互粘附。填充在PI薄膜的通孔5中的铜箔层，以及形成在衬底板上的铜箔层或固定-电位引线层接触等都是通过热压连接的。
图4A和4B显示填充在通孔5中的金属层6与固定-电位引线层4a与4b之间的接触连接状态。图4A显示加压焊接前的状态，而图4B显示加压焊接后的状态。如图4A所示，在加压焊接前形成在PI薄膜21中填充通孔5的金属层6的底部从通孔5向外突出。在图4A和图4B中，标号6a表示从通孔5向外的突起。当突起6a面对底层固定-电位引线层4b时，进行图3E中所示的同时加压焊接步骤以便使加压焊接后的金属层6的突起6a变形，并且可靠地使金属层6和底层固定-电位引线层4b接触并且连接它们，如图4B所示。
图5A和5B显示根据本发明制造用于半导体芯片组件的多层电路板的方法中连接方法的另一个例子。填充通孔的金属层与固定-电位引线层被合金化并且连接它。图5A显示加压焊接前通过合金化连接，而图5B显示加压焊接后通过合金化连接。如图5A中所示，在通孔5用铜填充以形成金属层6之后，一层金箔层7在由填充铜形成的金属层6的底端镀上0.05到0.5μm的厚度。当金箔层7形成在金属层6的底端时，PI薄膜21通过热压力进行加压焊接，如图5B所示。然后，金扩散到一个PI薄膜21上的固定-电位引线层4b和通孔5中的金属层6以便在固定-电位引线层4与金属层6之间的界面上形成一个铜-金合金层22。这个合金层连接固定-电位引线层4和金属层6。
一般来讲，合金化需要加热。然而，就金-铜合金来讲，金在聚酰亚胺粘合温度(330到390℃)附近扩散到铜中以形成一种合金。本发明使用聚酰亚胺做有机树脂薄层，因此能够利用金-铜合金实现连接。代替金，一种金-锡合金薄膜可以形成在引线层与填充铜层之间。而且在这种情况下，上引线层4a与下引线层4b是通过金属层与填充铜层之间合金化连接的通孔5的金属层6电连接的，如图5B所示。
下面将描述根据本发明的另一个实施例的用于半导体芯片组件的多层电路板。
图6显示根据本发明的另一个实施例的用于半导体芯片组件的多层电路板。图6中多层电路板是从一个具有金属薄膜作为一个衬底板的陶瓷板上形成。在采用陶瓷板的结构中，具有一层金属膜1a的陶瓷板1b代替图1结构中的衬底板1。与图1中同样的标号表示同样的部件，因此重复的描述将省略。这个实施例仍旧采用接触连接和由合金连接作为连接方法，类似于上面描述的实施例。当具有金属薄膜的陶瓷板用做一个衬底板时，热耗散效应变得差于如上所述金属板作为衬底板的热耗散。然而，当多个MCM形成在一个衬底板上时，并且一个接一个地切割，该陶瓷板允许精确地切割这些MCM而在衬底板的切割端面没有形成任何烧化。
在上面描述本发明的每个实施例中，衬底板1或者金属薄膜1a都是连接到GND的，但是还可以连接到一个固定电位作为一个电源电压的电位。
如上所述，本发明提供一种用于半导体芯片组件的多层电路板，其包括一个具有一个金属材料制成的主表面的衬底板，固定电位被施加给该主表面；一些在衬底板的主表面上堆叠并且在它们的表面上有引线层形成的绝缘层；一些构成形成在绝缘层上的引线层部分的固定-电位引线层；一些形成在固定-电位引线层下面的通孔，以便通过绝缘层延伸；以及一些填充通孔的金属层，以致于使上端连接到固定-电位引线层的下表面，其中与衬底板主表面接触的一个绝缘层形成在衬底板上，而金属层的底端与衬底板的主表面接触，并且堆叠与衬底板主表面接触形成在该绝缘层上的其它绝缘层，同时金属层的下端与一个绝缘层的固定-电位引线层的上表面接触。
根据本发明，形成在该绝缘层的引线层通过形成在该绝缘层上的固定-电位引线层连接到固定-电位，并且填充在通孔中的金属层与引线层接触。该固定-电位引线层可以缩短，以便提供几乎等于一个校准固定电位的固定电位给半导体芯片。
当该衬底板以一个金属板形成时，这个金属板功能如一个热收集器以改进热耗散效应。
即使当该衬底板以一个金属板或者采用一个金属薄膜的陶瓷板来形成时，在固定电位上的平板金属层存在屏蔽从该板下面的电磁波辐射的电磁波屏蔽效应。

Claims (7)

1.一种用于半导体芯片组件的多层电路板，它包括：
衬底板(1)，其具有由金属材料制成的一个主表面，固定电位被施加给该主表面；
绝缘层(2，3)，其在所述衬底板的主表面上堆叠并具有形成在所述绝缘层表面上的引线层；
固定-电位引线层(4)，其构成在所述绝缘层上形成的引线层的一部分；
一些形成在所述固定-电位引线层下面的通孔(5)，以便通过所述绝缘层延伸；以及
一些填充通孔的金属层(6)，以致于使所述金属层的上端连接到所述固定-电位引线层的下表面，
其中与所述衬底板主表面接触的所述一个绝缘层形成在所述衬底板上，而所述金属层的底端与所述衬底板的主表面接触，并且
堆叠与所述衬底板主表面接触的形成在所述绝缘层上的其它绝缘层，同时所述金属层的下端与所述一绝缘层的所述固定-电位引线层的上表面接触，
所述填充在所述通孔中的金属层是由铜制成，其特征在于，
金被施加在填充通孔的所述金属层的底端。
2.根据权利要求1所述的电路板，其特征在于所述绝缘层是一种有机树脂制成的有机树脂薄板。
3.根据权利要求2所述的电路板，其特征在于所述有机树脂薄板是由聚酰亚胺制成。
4.根据权利要求1所述的电路板，其特征在于金属材料、引线层都是由铜制成。
5.根据权利要求1所述的电路板，其特征在于所述衬底板是一个由金属板形成的引线框。
6.根据权利要求5所述的电路板，其特征在于所述引线框是由一个铜板形成。
7.根据权利要求1所述的电路板，其特征在于所述衬底板是由一个在主表面上具有一层金属薄膜的陶瓷板形成。
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CN1248882A (zh) 2000-03-29
EP0987748A2 (en) 2000-03-22
TW444529B (en) 2001-07-01
JP3119630B2 (ja) 2000-12-25
US6555763B1 (en) 2003-04-29
JP2000100987A (ja) 2000-04-07
KR20000023266A (ko) 2000-04-25
EP0987748A3 (en) 2005-05-11
KR100335454B1 (ko) 2002-05-04

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