CN110050339A - 具有低栅极通路电感的功率半导体模块 - Google Patents
具有低栅极通路电感的功率半导体模块 Download PDFInfo
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- CN110050339A CN110050339A CN201780077664.XA CN201780077664A CN110050339A CN 110050339 A CN110050339 A CN 110050339A CN 201780077664 A CN201780077664 A CN 201780077664A CN 110050339 A CN110050339 A CN 110050339A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16204843 | 2016-12-16 | ||
EP16204843.3 | 2016-12-16 | ||
PCT/EP2017/082777 WO2018109069A1 (en) | 2016-12-16 | 2017-12-14 | Power semiconductor module with low gate path inductance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110050339A true CN110050339A (zh) | 2019-07-23 |
CN110050339B CN110050339B (zh) | 2023-12-22 |
Family
ID=57754979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780077664.XA Active CN110050339B (zh) | 2016-12-16 | 2017-12-14 | 具有低栅极通路电感的功率半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11018109B2 (zh) |
EP (1) | EP3555914B1 (zh) |
JP (1) | JP7153649B2 (zh) |
CN (1) | CN110050339B (zh) |
WO (1) | WO2018109069A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115910985A (zh) * | 2022-11-10 | 2023-04-04 | 北京智慧能源研究院 | 一种功率半导体模块 |
CN116830247A (zh) * | 2021-02-08 | 2023-09-29 | 日立能源瑞士股份公司 | 功率半导体模块、功率半导体器件和用于制造功率半导体器件的方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7233570B2 (ja) * | 2019-05-14 | 2023-03-06 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 低インダクタンスゲート交差部を有するパワー半導体モジュール |
DE102019112935B4 (de) * | 2019-05-16 | 2021-04-29 | Danfoss Silicon Power Gmbh | Halbleitermodul |
DE102019112934A1 (de) * | 2019-05-16 | 2020-11-19 | Danfoss Silicon Power Gmbh | Halbleitermodul |
DE102019112936A1 (de) | 2019-05-16 | 2020-11-19 | Danfoss Silicon Power Gmbh | Halbleitermodul |
DE102019114040A1 (de) * | 2019-05-26 | 2020-11-26 | Danfoss Silicon Power Gmbh | Dreistufiges Leistungsmodul |
US20230116118A1 (en) * | 2020-01-30 | 2023-04-13 | Hitachi Energy Switzerland Ag | Free Configurable Power Semiconductor Module |
JP1695848S (zh) * | 2021-03-19 | 2021-09-27 | ||
JP1695825S (zh) * | 2021-03-19 | 2021-09-27 | ||
JP1695850S (zh) * | 2021-03-19 | 2021-09-27 | ||
JP1695824S (zh) * | 2021-03-19 | 2021-09-27 | ||
JP1695849S (zh) * | 2021-03-19 | 2021-09-27 | ||
JP1695826S (zh) * | 2021-03-19 | 2021-09-27 | ||
USD1030686S1 (en) * | 2021-03-23 | 2024-06-11 | Rohm Co., Ltd. | Power semiconductor module |
USD1021831S1 (en) * | 2021-03-23 | 2024-04-09 | Rohm Co., Ltd. | Power semiconductor module |
US12021989B2 (en) * | 2021-12-16 | 2024-06-25 | Enduvo, Inc. | Tokenizing a lesson package for a virtual environment |
EP4203019A1 (en) * | 2021-12-23 | 2023-06-28 | Hitachi Energy Switzerland AG | Power module and method for manufacturing a power module |
DE102022102966B4 (de) | 2022-02-09 | 2024-09-12 | Audi Aktiengesellschaft | Halbleiter-Modul mit integriertem Stromsensor |
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CN103117276A (zh) * | 2011-09-30 | 2013-05-22 | 英飞凌科技股份有限公司 | 功率半导体模块 |
WO2013089242A1 (ja) * | 2011-12-14 | 2013-06-20 | ローム株式会社 | パワーモジュール半導体装置およびその製造方法 |
JP2013138234A (ja) * | 2013-02-19 | 2013-07-11 | Mitsubishi Electric Corp | 半導体装置 |
US20150287665A1 (en) * | 2012-09-20 | 2015-10-08 | Rohm Co., Ltd. | Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold |
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US6906404B2 (en) * | 2003-05-16 | 2005-06-14 | Ballard Power Systems Corporation | Power module with voltage overshoot limiting |
JP2005217072A (ja) * | 2004-01-28 | 2005-08-11 | Renesas Technology Corp | 半導体装置 |
DE102004027185B4 (de) * | 2004-06-03 | 2008-08-28 | Infineon Technologies Ag | Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration |
DE102004041904B4 (de) * | 2004-08-30 | 2011-08-18 | Infineon Technologies AG, 81669 | Verfahren zur Einstellung eines Serienwiderstandes am Gate eines Leistungstransistors |
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2017
- 2017-12-14 JP JP2019532140A patent/JP7153649B2/ja active Active
- 2017-12-14 WO PCT/EP2017/082777 patent/WO2018109069A1/en unknown
- 2017-12-14 CN CN201780077664.XA patent/CN110050339B/zh active Active
- 2017-12-14 EP EP17811614.1A patent/EP3555914B1/en active Active
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2019
- 2019-06-17 US US16/442,923 patent/US11018109B2/en active Active
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CN102754345A (zh) * | 2009-12-03 | 2012-10-24 | Abb技术有限公司 | 用于控制并联连接的至少两个功率半导体的系统和方法 |
CN103117276A (zh) * | 2011-09-30 | 2013-05-22 | 英飞凌科技股份有限公司 | 功率半导体模块 |
WO2013089242A1 (ja) * | 2011-12-14 | 2013-06-20 | ローム株式会社 | パワーモジュール半導体装置およびその製造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116830247A (zh) * | 2021-02-08 | 2023-09-29 | 日立能源瑞士股份公司 | 功率半导体模块、功率半导体器件和用于制造功率半导体器件的方法 |
CN116830247B (zh) * | 2021-02-08 | 2024-08-09 | 日立能源有限公司 | 功率半导体模块、功率半导体器件和用于制造功率半导体器件的方法 |
CN115910985A (zh) * | 2022-11-10 | 2023-04-04 | 北京智慧能源研究院 | 一种功率半导体模块 |
CN115910985B (zh) * | 2022-11-10 | 2023-10-27 | 北京智慧能源研究院 | 一种功率半导体模块 |
Also Published As
Publication number | Publication date |
---|---|
JP7153649B2 (ja) | 2022-10-14 |
US11018109B2 (en) | 2021-05-25 |
EP3555914A1 (en) | 2019-10-23 |
JP2020515034A (ja) | 2020-05-21 |
CN110050339B (zh) | 2023-12-22 |
US20190304946A1 (en) | 2019-10-03 |
EP3555914B1 (en) | 2021-02-03 |
WO2018109069A1 (en) | 2018-06-21 |
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