JP5206188B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5206188B2 JP5206188B2 JP2008184091A JP2008184091A JP5206188B2 JP 5206188 B2 JP5206188 B2 JP 5206188B2 JP 2008184091 A JP2008184091 A JP 2008184091A JP 2008184091 A JP2008184091 A JP 2008184091A JP 5206188 B2 JP5206188 B2 JP 5206188B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 230000008054 signal transmission Effects 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 42
- 239000012212 insulator Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 230000005674 electromagnetic induction Effects 0.000 abstract description 8
- 230000010355 oscillation Effects 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- ZMRUPTIKESYGQW-UHFFFAOYSA-N propranolol hydrochloride Chemical compound [H+].[Cl-].C1=CC=C2C(OCC(O)CNC(C)C)=CC=CC2=C1 ZMRUPTIKESYGQW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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Description
該駆動信号伝送用配線と該エミッタセンス配線は該ベース基板と平行に配置され、該駆動信号伝送用配線と該エミッタセンス配線は互いに接触せずに重なる重畳領域を有し、該重畳領域では該駆動信号伝送用配線を流れる電流と該エミッタセンス配線を流れる電流の向きは逆方向であり、該駆動信号伝送用配線は全体が該重畳領域を形成することを特徴とする。
本実施形態は電磁誘導の影響を抑制して、所望のゲート駆動信号をパワーデバイスのゲートに印加できる半導体装置に関する。本実施形態の半導体装置の構成を図1、2、3に示す。図1は本実施形態の半導体装置の絶縁基板および搭載される素子について説明する図である。図2は図1の構成を備える半導体装置の配線の一部について説明する図である。図3は図2で説明する配線の断面構造について説明する図である。
本実施形態は駆動信号伝送用配線とエミッタセンス配線とが同一プリント基板に形成される半導体装置に関する。本実施形態を説明する図は平面図4、5である。図4、5ともに図1〜3で説明した構成要素と同一の形状で現された部分については実施形態1と同様であるから説明を省略する。
本実施形態は駆動信号伝送用配線とエミッタセンス配線とが同一プリント基板に形成される半導体装置であって実施形態2と異なりエミッタセンス配線が2のパターンからなる半導体装置に関する。本実施形態を説明する図は平面図6、7、9、10、11と断面図8である。図6、7、9、10、11ともに図1〜3で説明した構成要素と同一の形状で現された部分については実施形態1と同様であるから説明を省略する。
本実施形態は駆動信号伝送用配線とエミッタセンス配線とが同一プリント基板に形成される半導体装置であって実施形態2、3と異なり各IGBTに伸びる配線長を統一できる半導体装置に関する。本実施形態を説明する図は平面図12、13、14、15である。図12、13、14、15ともに図1〜3で説明した構成要素と同一の形状で現された部分については実施形態1と同様であるから説明を省略する。
40 駆動信号伝送用配線
41 エミッタセンス配線
44 エミッタセンス端子
45 ゲート駆動信号入力端子
Claims (5)
- ベース基板上に配置される複数の絶縁基板と、
前記複数の絶縁基板の各々に配置されるパワーデバイスと、
各々が前記複数の絶縁基板の各々に対応し、一端が前記パワーデバイスのゲートとワイヤを有する経路により電気的に接続された複数の棒状中継導体と、
外部からのゲート駆動信号が入力されるゲート駆動信号入力端子と、
外部に接続されるエミッタセンス端子と、
前記複数の棒状中継導体の他端と前記ゲート駆動信号入力端子とを接続する金属製の平板である駆動信号伝送用配線と、
前記パワーデバイスのエミッタと前記エミッタセンス端子とを電気的に接続する金属製の平板であるエミッタセンス配線とを備え、
前記駆動信号伝送用配線と前記エミッタセンス配線は前記ベース基板と平行に配置され、
前記駆動信号伝送用配線と前記エミッタセンス配線は互いに接触せずに重なる重畳領域を有し、
前記重畳領域では前記駆動信号伝送用配線を流れる電流と前記エミッタセンス配線を流れる電流の向きは逆方向であり、
前記駆動信号伝送用配線は全体が前記重畳領域を形成することを特徴とする半導体装置。 - 前記重畳領域において、前記駆動信号伝送用配線と前記エミッタセンス配線との間に厚さが均一である絶縁体が配置され、
前記駆動信号伝送用配線と前記エミッタセンス配線はそれぞれ前記絶縁体と接することを特徴とする請求項1に記載の半導体装置。 - 前記駆動信号伝送用配線と前記エミッタセンス配線は同一プリント基板に形成されることを特徴とする請求項1に記載の半導体装置。
- 前記駆動信号伝送用配線および前記エミッタセンス配線、またはそのいずれかが複数の層を備えていることを特徴とする請求項3に記載の半導体装置。
- ベース基板上に配置される複数の絶縁基板と、
前記複数の絶縁基板の各々に配置されるパワーデバイスと、
各々が前記複数の絶縁基板の各々に対応し、一端が前記パワーデバイスのゲートとワイヤを有する経路により電気的に接続された複数の棒状中継導体と、
外部からのゲート駆動信号が入力されるゲート駆動信号入力端子と、
外部に接続されるエミッタセンス端子と、
前記複数の棒状中継導体の他端と前記ゲート駆動信号入力端子とを接続する金属製の平板である駆動信号伝送用配線と、
前記パワーデバイスのエミッタと前記エミッタセンス端子とを電気的に接続する金属製の平板であるエミッタセンス配線とを備え、
前記駆動信号伝送用配線と前記エミッタセンス配線は前記ベース基板と平行に配置され、
前記駆動信号伝送用配線と前記エミッタセンス配線は互いに接触せずに重なる重畳領域を有し、
前記重畳領域では前記駆動信号伝送用配線を流れる電流と前記エミッタセンス配線を流れる電流の向きは逆方向であることを特徴とする半導体装置。
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US10186607B2 (en) | 2014-07-04 | 2019-01-22 | Mitsubishi Electric Corporation | Power semiconductor device including a semiconductor switching element |
EP3555914B1 (en) * | 2016-12-16 | 2021-02-03 | ABB Schweiz AG | Power semiconductor module with low gate path inductance |
JP7233570B2 (ja) * | 2019-05-14 | 2023-03-06 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 低インダクタンスゲート交差部を有するパワー半導体モジュール |
WO2023162722A1 (ja) * | 2022-02-24 | 2023-08-31 | ローム株式会社 | 半導体装置および半導体モジュール |
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JP3521651B2 (ja) * | 1996-10-18 | 2004-04-19 | 株式会社日立製作所 | パワー半導体装置 |
JP3629172B2 (ja) * | 1999-09-30 | 2005-03-16 | 株式会社東芝 | 圧接型半導体装置 |
JP4138192B2 (ja) * | 1999-12-27 | 2008-08-20 | 三菱電機株式会社 | 半導体スイッチ装置 |
JP4866143B2 (ja) * | 2006-05-15 | 2012-02-01 | 三菱電機株式会社 | 電力用半導体装置 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |