CN109069990B - 用于排放沉积移除的温度控制远端等离子清洗 - Google Patents

用于排放沉积移除的温度控制远端等离子清洗 Download PDF

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Publication number
CN109069990B
CN109069990B CN201780025125.1A CN201780025125A CN109069990B CN 109069990 B CN109069990 B CN 109069990B CN 201780025125 A CN201780025125 A CN 201780025125A CN 109069990 B CN109069990 B CN 109069990B
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China
Prior art keywords
sensors
exhaust system
temperature
downstream
remote plasma
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CN201780025125.1A
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Chinese (zh)
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CN109069990A (zh
Inventor
马丁·A·希尔金
戴维·K·卡尔森
马修·D·斯科特奈伊卡斯尔
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Engineering (AREA)
CN201780025125.1A 2016-04-26 2017-04-04 用于排放沉积移除的温度控制远端等离子清洗 Active CN109069990B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662327870P 2016-04-26 2016-04-26
US62/327,870 2016-04-26
PCT/US2017/025999 WO2017189194A1 (en) 2016-04-26 2017-04-04 Temperature controlled remote plasma clean for exhaust deposit removal

Publications (2)

Publication Number Publication Date
CN109069990A CN109069990A (zh) 2018-12-21
CN109069990B true CN109069990B (zh) 2021-11-16

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CN201780025125.1A Active CN109069990B (zh) 2016-04-26 2017-04-04 用于排放沉积移除的温度控制远端等离子清洗

Country Status (6)

Country Link
US (1) US10500614B2 (enExample)
JP (1) JP6924775B2 (enExample)
KR (1) KR102194085B1 (enExample)
CN (1) CN109069990B (enExample)
TW (1) TWI702093B (enExample)
WO (1) WO2017189194A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
CN112335342B (zh) * 2018-06-14 2023-07-14 Mks仪器公司 用于远程等离子源的自由基输出监控器和使用方法
JP7374158B2 (ja) * 2021-10-15 2023-11-06 株式会社荏原製作所 生成物除去装置、処理システム及び生成物除去方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1323917A (zh) * 2000-04-28 2001-11-28 佳能株式会社 薄膜淀积设备、薄膜淀积工艺、真空系统以及判漏方法
US6872365B1 (en) * 1999-05-19 2005-03-29 Daimlerchrysler Ag Exhaust gas cleaning system having internal ammonia production for reducing nitrogen oxides
CN101427352A (zh) * 2005-03-16 2009-05-06 高级技术材料公司 监测蚀刻等离子体加工设备中等离子体状态的方法和装置
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法
CN102758669A (zh) * 2011-04-26 2012-10-31 陈温乐 车辆排放废气中和降温处理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592817B1 (en) * 2000-03-31 2003-07-15 Applied Materials, Inc. Monitoring an effluent from a chamber
JP2006004962A (ja) * 2004-06-15 2006-01-05 Canon Inc 堆積膜形成装置およびそのクリーニング方法
JP2006086156A (ja) * 2004-09-14 2006-03-30 Canon Inc 生成物の除去方法
TWI279260B (en) * 2004-10-12 2007-04-21 Applied Materials Inc Endpoint detector and particle monitor
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7210338B2 (en) * 2005-07-29 2007-05-01 Honda Motor Co., Ltd. Valve testing device having integrated purge circuit and method of valve testing
JP2009510269A (ja) * 2005-10-03 2009-03-12 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド チャンバのクリーニングプロセスのエンドポイントを決定するためのシステム及び方法
JP4876242B2 (ja) * 2005-12-16 2012-02-15 国立大学法人静岡大学 結晶成長方法及び結晶成長装置
KR101213689B1 (ko) * 2006-06-12 2012-12-18 주식회사 테라텍 반도체 및 ｌｃｄ 제조장치의 공정 반응 챔버의 배기부 및진공펌프의 세정장치
JP2011111655A (ja) * 2009-11-27 2011-06-09 Sharp Corp プラズマｃｖｄ装置のクリーニング方法、半導体薄膜の成膜方法、光電変換素子の製造方法およびプラズマｃｖｄ装置
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872365B1 (en) * 1999-05-19 2005-03-29 Daimlerchrysler Ag Exhaust gas cleaning system having internal ammonia production for reducing nitrogen oxides
CN1323917A (zh) * 2000-04-28 2001-11-28 佳能株式会社 薄膜淀积设备、薄膜淀积工艺、真空系统以及判漏方法
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法
CN101427352A (zh) * 2005-03-16 2009-05-06 高级技术材料公司 监测蚀刻等离子体加工设备中等离子体状态的方法和装置
CN102758669A (zh) * 2011-04-26 2012-10-31 陈温乐 车辆排放废气中和降温处理装置

Also Published As

Publication number Publication date
CN109069990A (zh) 2018-12-21
US20170304877A1 (en) 2017-10-26
KR102194085B1 (ko) 2020-12-22
JP2019518327A (ja) 2019-06-27
KR20180128082A (ko) 2018-11-30
TWI702093B (zh) 2020-08-21
US10500614B2 (en) 2019-12-10
TW201801813A (zh) 2018-01-16
JP6924775B2 (ja) 2021-08-25
WO2017189194A1 (en) 2017-11-02

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