KR102194085B1 - 배출 퇴적물 제거를 위한 온도 제어식 원격 플라즈마 세정 - Google Patents

배출 퇴적물 제거를 위한 온도 제어식 원격 플라즈마 세정 Download PDF

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Publication number
KR102194085B1
KR102194085B1 KR1020187033749A KR20187033749A KR102194085B1 KR 102194085 B1 KR102194085 B1 KR 102194085B1 KR 1020187033749 A KR1020187033749 A KR 1020187033749A KR 20187033749 A KR20187033749 A KR 20187033749A KR 102194085 B1 KR102194085 B1 KR 102194085B1
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South Korea
Prior art keywords
exhaust system
temperature
downstream
remote plasma
cleaning gas
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Korean (ko)
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KR20180128082A (ko
Inventor
마틴 에이. 힐켄
데이비드 케이. 칼슨
매튜 디. 스코트니-캐슬
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어플라이드 머티어리얼스, 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Engineering (AREA)
KR1020187033749A 2016-04-26 2017-04-04 배출 퇴적물 제거를 위한 온도 제어식 원격 플라즈마 세정 Active KR102194085B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662327870P 2016-04-26 2016-04-26
US62/327,870 2016-04-26
PCT/US2017/025999 WO2017189194A1 (en) 2016-04-26 2017-04-04 Temperature controlled remote plasma clean for exhaust deposit removal

Publications (2)

Publication Number Publication Date
KR20180128082A KR20180128082A (ko) 2018-11-30
KR102194085B1 true KR102194085B1 (ko) 2020-12-22

Family

ID=60089372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187033749A Active KR102194085B1 (ko) 2016-04-26 2017-04-04 배출 퇴적물 제거를 위한 온도 제어식 원격 플라즈마 세정

Country Status (6)

Country Link
US (1) US10500614B2 (enExample)
JP (1) JP6924775B2 (enExample)
KR (1) KR102194085B1 (enExample)
CN (1) CN109069990B (enExample)
TW (1) TWI702093B (enExample)
WO (1) WO2017189194A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
CN112335342B (zh) * 2018-06-14 2023-07-14 Mks仪器公司 用于远程等离子源的自由基输出监控器和使用方法
JP7374158B2 (ja) * 2021-10-15 2023-11-06 株式会社荏原製作所 生成物除去装置、処理システム及び生成物除去方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070286766A1 (en) * 2006-06-12 2007-12-13 Teratech Co., Ltd. Apparatus for cleaning exhaust part and vacuum pump of reaction chamber for semiconductor device and LCD manufacturing equipment

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DE19922960C2 (de) * 1999-05-19 2003-07-17 Daimler Chrysler Ag Abgasreinigungsanlage mit interner Ammoniakerzeugung zur Stickoxidreduktion
US6592817B1 (en) * 2000-03-31 2003-07-15 Applied Materials, Inc. Monitoring an effluent from a chamber
US20030207021A1 (en) * 2000-04-28 2003-11-06 Hiroshi Izawa Deposited-film formation apparatus, deposited-film formation process, vacuum system, leak judgment method, and computer-readable recording medium with recorded leak-judgment- executable program
JP2006004962A (ja) * 2004-06-15 2006-01-05 Canon Inc 堆積膜形成装置およびそのクリーニング方法
JP2006086156A (ja) * 2004-09-14 2006-03-30 Canon Inc 生成物の除去方法
TWI279260B (en) * 2004-10-12 2007-04-21 Applied Materials Inc Endpoint detector and particle monitor
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7210338B2 (en) * 2005-07-29 2007-05-01 Honda Motor Co., Ltd. Valve testing device having integrated purge circuit and method of valve testing
JP2009510269A (ja) * 2005-10-03 2009-03-12 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド チャンバのクリーニングプロセスのエンドポイントを決定するためのシステム及び方法
JP4876242B2 (ja) * 2005-12-16 2012-02-15 国立大学法人静岡大学 結晶成長方法及び結晶成長装置
JP2011111655A (ja) * 2009-11-27 2011-06-09 Sharp Corp プラズマｃｖｄ装置のクリーニング方法、半導体薄膜の成膜方法、光電変換素子の製造方法およびプラズマｃｖｄ装置
CN102758669A (zh) * 2011-04-26 2012-10-31 陈温乐 车辆排放废气中和降温处理装置
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070286766A1 (en) * 2006-06-12 2007-12-13 Teratech Co., Ltd. Apparatus for cleaning exhaust part and vacuum pump of reaction chamber for semiconductor device and LCD manufacturing equipment

Also Published As

Publication number Publication date
CN109069990A (zh) 2018-12-21
US20170304877A1 (en) 2017-10-26
JP2019518327A (ja) 2019-06-27
KR20180128082A (ko) 2018-11-30
CN109069990B (zh) 2021-11-16
TWI702093B (zh) 2020-08-21
US10500614B2 (en) 2019-12-10
TW201801813A (zh) 2018-01-16
JP6924775B2 (ja) 2021-08-25
WO2017189194A1 (en) 2017-11-02

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