JP6924775B2 - 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄 - Google Patents

排気堆積物の除去のための温度制御された遠隔プラズマ洗浄 Download PDF

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JP6924775B2
JP6924775B2 JP2018555590A JP2018555590A JP6924775B2 JP 6924775 B2 JP6924775 B2 JP 6924775B2 JP 2018555590 A JP2018555590 A JP 2018555590A JP 2018555590 A JP2018555590 A JP 2018555590A JP 6924775 B2 JP6924775 B2 JP 6924775B2
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Japan
Prior art keywords
exhaust system
temperature
downstream
remote plasma
cleaning gas
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Japanese (ja)
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JP2019518327A (ja
JP2019518327A5 (enExample
Inventor
マーティン エー． ヒルケン，
マーティン エー． ヒルケン，
デーヴィッド ケー． カールソン，
デーヴィッド ケー． カールソン，
マシュー ディー． スコットニー−キャッスル，
マシュー ディー． スコットニー−キャッスル，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2019518327A5 publication Critical patent/JP2019518327A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Engineering (AREA)
JP2018555590A 2016-04-26 2017-04-04 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄 Active JP6924775B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662327870P 2016-04-26 2016-04-26
US62/327,870 2016-04-26
PCT/US2017/025999 WO2017189194A1 (en) 2016-04-26 2017-04-04 Temperature controlled remote plasma clean for exhaust deposit removal

Publications (3)

Publication Number Publication Date
JP2019518327A JP2019518327A (ja) 2019-06-27
JP2019518327A5 JP2019518327A5 (enExample) 2020-05-14
JP6924775B2 true JP6924775B2 (ja) 2021-08-25

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Application Number Title Priority Date Filing Date
JP2018555590A Active JP6924775B2 (ja) 2016-04-26 2017-04-04 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄

Country Status (6)

Country Link
US (1) US10500614B2 (enExample)
JP (1) JP6924775B2 (enExample)
KR (1) KR102194085B1 (enExample)
CN (1) CN109069990B (enExample)
TW (1) TWI702093B (enExample)
WO (1) WO2017189194A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11332824B2 (en) 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
WO2019241405A1 (en) * 2018-06-14 2019-12-19 Mks Instruments, Inc. Radical output monitor for a remote plasma source and method of use
JP7374158B2 (ja) * 2021-10-15 2023-11-06 株式会社荏原製作所 生成物除去装置、処理システム及び生成物除去方法
WO2026043853A1 (en) * 2024-08-22 2026-02-26 Lam Research Corporation Methods and apparatus for monitoring a processing tool
CN119819657A (zh) * 2025-01-10 2025-04-15 浙江芯晟半导体科技有限责任公司 氮化硅生产设备中去除氯化铵结晶物的方法及装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19922960C2 (de) * 1999-05-19 2003-07-17 Daimler Chrysler Ag Abgasreinigungsanlage mit interner Ammoniakerzeugung zur Stickoxidreduktion
US6592817B1 (en) * 2000-03-31 2003-07-15 Applied Materials, Inc. Monitoring an effluent from a chamber
US20030207021A1 (en) * 2000-04-28 2003-11-06 Hiroshi Izawa Deposited-film formation apparatus, deposited-film formation process, vacuum system, leak judgment method, and computer-readable recording medium with recorded leak-judgment- executable program
JP2006004962A (ja) * 2004-06-15 2006-01-05 Canon Inc 堆積膜形成装置およびそのクリーニング方法
JP2006086156A (ja) * 2004-09-14 2006-03-30 Canon Inc 生成物の除去方法
TWI279260B (en) * 2004-10-12 2007-04-21 Applied Materials Inc Endpoint detector and particle monitor
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20060211253A1 (en) * 2005-03-16 2006-09-21 Ing-Shin Chen Method and apparatus for monitoring plasma conditions in an etching plasma processing facility
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7210338B2 (en) * 2005-07-29 2007-05-01 Honda Motor Co., Ltd. Valve testing device having integrated purge circuit and method of valve testing
TW200725686A (en) * 2005-10-03 2007-07-01 Advanced Tech Materials Systems and methods for determination of endpoint of chamber cleaning processes
JP4876242B2 (ja) * 2005-12-16 2012-02-15 国立大学法人静岡大学 結晶成長方法及び結晶成長装置
KR101213689B1 (ko) * 2006-06-12 2012-12-18 주식회사 테라텍 반도체 및 ｌｃｄ 제조장치의 공정 반응 챔버의 배기부 및진공펌프의 세정장치
JP2011111655A (ja) * 2009-11-27 2011-06-09 Sharp Corp プラズマｃｖｄ装置のクリーニング方法、半導体薄膜の成膜方法、光電変換素子の製造方法およびプラズマｃｖｄ装置
CN102758669A (zh) * 2011-04-26 2012-10-31 陈温乐 车辆排放废气中和降温处理装置
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JP2019518327A (ja) 2019-06-27
KR102194085B1 (ko) 2020-12-22
TW201801813A (zh) 2018-01-16
KR20180128082A (ko) 2018-11-30
US10500614B2 (en) 2019-12-10
TWI702093B (zh) 2020-08-21
CN109069990B (zh) 2021-11-16
US20170304877A1 (en) 2017-10-26
CN109069990A (zh) 2018-12-21
WO2017189194A1 (en) 2017-11-02

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