CN108630647A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN108630647A CN108630647A CN201710650835.5A CN201710650835A CN108630647A CN 108630647 A CN108630647 A CN 108630647A CN 201710650835 A CN201710650835 A CN 201710650835A CN 108630647 A CN108630647 A CN 108630647A
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- semiconductor substrate
- contact hole
- insulating film
- metal electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 description 79
- 230000004888 barrier function Effects 0.000 description 25
- 238000010276 construction Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 239000007769 metal material Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
Description
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CN202111060595.6A CN113782507B (zh) | 2017-03-17 | 2017-08-02 | 半导体装置 |
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JP2017053588A JP2018157110A (ja) | 2017-03-17 | 2017-03-17 | 半導体装置およびその製造方法 |
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JP (1) | JP2018157110A (zh) |
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KR102411698B1 (ko) | 2017-11-13 | 2022-06-22 | 삼성전자주식회사 | 이미지 센서 및 이의 형성 방법 |
JP2022047357A (ja) | 2020-09-11 | 2022-03-24 | キオクシア株式会社 | 半導体装置およびその製造方法 |
US11355464B2 (en) * | 2020-11-10 | 2022-06-07 | Nanya Technology Corporation | Semiconductor device structure with bottle-shaped through silicon via and method for forming the same |
US20230352433A1 (en) * | 2022-04-27 | 2023-11-02 | Nanya Technology Corporation | Semiconductor device structure with composite bottle-shaped through silicon via and method for prepriang the same |
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CN100382247C (zh) * | 2004-07-16 | 2008-04-16 | 三洋电机株式会社 | 半导体装置的制造方法 |
CN102017099A (zh) * | 2008-12-17 | 2011-04-13 | 松下电器产业株式会社 | 贯通电极的形成方法及半导体装置 |
US20130134548A1 (en) * | 2011-11-30 | 2013-05-30 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
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JPS5873145A (ja) | 1981-10-27 | 1983-05-02 | Mitsubishi Electric Corp | 半導体パツケ−ジ |
US7843064B2 (en) * | 2007-12-21 | 2010-11-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and process for the formation of TSVs |
JP4799542B2 (ja) | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
KR20100021856A (ko) * | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | 관통 전극을 갖는 반도체장치의 형성방법 및 관련된 장치 |
JP5300419B2 (ja) * | 2008-11-05 | 2013-09-25 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP5532394B2 (ja) * | 2009-10-15 | 2014-06-25 | セイコーエプソン株式会社 | 半導体装置及び回路基板並びに電子機器 |
US8471367B2 (en) * | 2009-11-12 | 2013-06-25 | Panasonic Corporation | Semiconductor device and method for manufacturing semiconductor device |
US8232626B2 (en) * | 2010-06-14 | 2012-07-31 | Hong Kong Applied Science & Technology Research Institute Co. Ltd. | Via and method of via forming and method of via filling |
KR20120000748A (ko) * | 2010-06-28 | 2012-01-04 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
JP2012099548A (ja) * | 2010-10-29 | 2012-05-24 | Fujikura Ltd | 貫通配線基板の製造方法及び貫通配線基板 |
KR101620767B1 (ko) * | 2011-10-28 | 2016-05-12 | 인텔 코포레이션 | 스루-실리콘 비아들과 결합된 미세 피치 싱글 다마신 백사이드 금속 재배선 라인들을 포함하는 3d 상호연결 구조 |
WO2013062590A1 (en) * | 2011-10-28 | 2013-05-02 | Intel Corporation | 3d interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach |
US9583365B2 (en) * | 2012-05-25 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming interconnects for three dimensional integrated circuit |
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JP2014013810A (ja) * | 2012-07-04 | 2014-01-23 | Seiko Epson Corp | 基板、基板の製造方法、半導体装置、及び電子機器 |
US9177914B2 (en) * | 2012-11-15 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal pad structure over TSV to reduce shorting of upper metal layer |
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JP5873145B2 (ja) | 2014-07-08 | 2016-03-01 | 株式会社フジクラ | 貫通配線基板の製造方法 |
JP5871038B2 (ja) * | 2014-08-19 | 2016-03-01 | セイコーエプソン株式会社 | 半導体装置及び電子デバイス |
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Patent Citations (3)
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CN100382247C (zh) * | 2004-07-16 | 2008-04-16 | 三洋电机株式会社 | 半导体装置的制造方法 |
CN102017099A (zh) * | 2008-12-17 | 2011-04-13 | 松下电器产业株式会社 | 贯通电极的形成方法及半导体装置 |
US20130134548A1 (en) * | 2011-11-30 | 2013-05-30 | Elpida Memory, Inc. | Semiconductor device and manufacturing method thereof |
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JP2018157110A (ja) | 2018-10-04 |
TW201836065A (zh) | 2018-10-01 |
TWI685062B (zh) | 2020-02-11 |
US20180269133A1 (en) | 2018-09-20 |
US10468334B2 (en) | 2019-11-05 |
CN108630647B (zh) | 2021-09-28 |
CN113782507B (zh) | 2024-02-13 |
CN113782507A (zh) | 2021-12-10 |
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