JP2016540391A - スルー基板ビアおよび前側構造を製造するためのデバイス、システムおよび方法 - Google Patents
スルー基板ビアおよび前側構造を製造するためのデバイス、システムおよび方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 92
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 161
- 239000004065 semiconductor Substances 0.000 claims abstract description 89
- 239000004020 conductor Substances 0.000 claims abstract description 75
- 239000003989 dielectric material Substances 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000001465 metallisation Methods 0.000 description 4
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 230000005669 field effect Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (24)
- 誘電構造を通り、前記誘電構造の下の半導体基板の少なくとも一部を通る開口を形成することであって、前記開口は、スルー基板ビア(TSV)用の材料を受け入れるように構成される、ことと、
誘電ライナー材料が前記開口を裏打ちする第一部分と、前記開口の横方向に外部の前記誘電構造の外部表面の上の第二部分とを有するように、前記誘電ライナー材料を形成することと、
導電性材料の第一部分が前記開口内にあり、前記導電性材料の第二部分が、前記開口の横方向に外部の前記誘電ライナー材料の前記第二部部分の露出表面の上にあるように、前記導電性材料を堆積することと、
前記誘電ライナー材料の前記第二部分が露出されるように前記導電性材料の前記第二部分を除去することであって、前記誘電ライナー材料の前記第二部分の少なくとも一部は、前記誘電構造の上にあるままであり、前記導電性材料の前記第一部分のほとんどの部分は、前記開口内にあるままであり、前記導電性材料の前記第一部分の前記残りの部分がTSVを画定する、ことと、
前記TSVに電気的に結合された前記誘電ライナー材料内のダマシン導線を形成することと、
を含む、
半導体デバイスを製造する方法。 - ダマシン線および誘電ライナー材料が等しい厚さを有するように、前記ダマシン導線は、前記誘電ライナー材料内に形成される、
請求項1に記載の方法。 - 前記誘電ライナー材料を形成することは、前記誘電構造の上にドープされていない酸化物を堆積することを含む、
請求項1に記載の方法。 - 前記導電性材料の前記第二部分を除去することは、前記誘電ライナー材料内の深さの上、または前記誘電ライナー材料の深さで停止するが、前記誘電ライナー材料を完全には通りぬけない化学機械除去手順を実施することを含む、
請求項1に記載の方法。 - 前記誘電ライナー材料の前記第二部分は、前記半導体ダイ内の永久層である、
請求項1に記載の方法。 - 前記導電性材料の前記第二部分を除去した後、前記方法は、前記導電性材料の前記第一部分をアニールすることと、前記誘電ライナー材料の前記第二部分が露出されるように、前記導電性材料の前記アニールされた第一部分およびバリア/シード構造の一部をその後除去することと、をさらに含む、
請求項1に記載の方法。 - 前記ダマシン線を形成することは、前記TSVと少なくともほぼ整列した前記誘電ライナー材料内にトレンチを形成することと、前記トレンチへと導電性材料を堆積することと、前記トレンチ内に堆積された前記導電性材料の過重のかかった部分を除去することと、を含み、前記誘電ライナー材料の厚さは、前記トレンチ内へと堆積された前記導電性材料の前記過重のかかった部分を除去した後、前記誘電構造の前記外部表面の上にあるままである、
請求項1に記載の方法。 - 前記TSVから横方向に離隔された接点にわたって第二のトレンチを形成することと、前記誘電ライナー材料を通って前記第二のトレンチ内に第二のダマシン線を形成することと、をさらに含む、
請求項7に記載の方法。 - 前記誘電ライナー材料を形成することは、前記誘電構造の上にドープされていない酸化物を堆積することを含み、
前記導電性材料の前記第二部分を除去することは、前記誘電ライナー材料内の深さの上、または前記誘電ライナー材料の深さで停止するが、前記誘電ライナー材料を完全には通りぬけない化学機械除去手順を実施することを含み、
前記ダマシン線を形成することは、前記TSVと少なくともほぼ整列した前記誘電ライナー材料内のトレンチを形成することと、前記トレンチへと導電性材料を堆積することと、前記トレンチへと堆積された前記導電性材料の過重のかかった部分を除去することと、を含み、前記誘電ライナー材料の厚さは、前記トレンチへと堆積された前記導電性材料の前記過重のかかった部分を除去した後で前記誘電構造の前記外部表面の上にあるままである、
請求項1に記載の方法。 - 前記ダマシン導線を形成する前に、
前記方法は、
前記誘電ライナーの前記第二部分の上に追加ダマシン誘電材料を堆積することと、
前記ダマシン誘電材料および前記誘電ライナーの前記第二部分を通る開口を形成することであって、前記開口は前記TSVと整列する、ことと、
前記ダマシン誘電材料および前記誘電ライナーの前記第二部分を通る前記開口内に導電性材料を堆積することと、
をさらに含む、
請求項1に記載の方法。 - 半導体基板と、前記基板上に形成されたソリッドステートフィーチャと、前記半導体基板および前記ソリッドステートフィーチャの上の誘電構造と、前記誘電構造を通って延び、前記接点に電気的に結合された接点と、を有する半導体デバイスを製造する方法であって、
前記誘電構造を通り、前記半導体基板を少なくとも部分的に通って延びる、スルー基板ビア(TSV)開口を形成することであって、前記TSV開口は、前記接点から横方向に離隔されている、ことと、
誘電ライナー材料が前記接点の上に重ね合わせられた部分を有するように、前記TSV開口内で前記誘電構造の外部表面の上に前記連続的誘電ライナー材料を形成することと、
前記TSV材料が、前記TSV開口を少なくとも部分的に充填し、前記接点の上に重ね合わせられた前記誘電ライナー材料の前記部分を被覆するように、前記誘電ライナー材料の上に前記TSV材料を堆積することと、
前記接点の上に重ね合わせられた前記誘電ライナー材料の前記部分が露出され、前記TSV材料の残りの部分が前記TSV開口内に存在するまで、前記TSV材料の一部を除去することであって、前記TSV材料の前記残りの部分はTSVを画定する、ことと、
前記接点を露出する第一のトレンチと、前記TSVと整列した第二のトレンチとを含む前記誘電ライナー材料内にトレンチをパターン化することと、
前記第一および第二のトレンチを導電性材料で充填し、それによって、第一および第二の導線を其々形成することと、
を含む、
方法。 - 前記連続的誘電ライナー材料を形成することは、前記誘電ライナーの第一部分が前記TSV開口を裏打ちし、前記誘電ライナー材料の第二部分が前記誘電構造を被覆するように、永久誘電材料を堆積することを含む、
請求項11に記載の方法。 - 前記TSV材料を堆積することは、前記TSV開口内で、前記誘電ライナー材料の前記第二部分の上にバルク銅を堆積することを含み、前記TSV材料の一部を除去することは、前記誘電ライナー材料内の深さの上、または前記誘電ライナー材料の深さにおいて停止するが、前記誘電ライナー材料を完全には通りぬけない化学機械除去プロセスを含む、
請求項12に記載の方法。 - 前記誘電ライナー材料はドープされていない酸化物を含む、
請求項13に記載の方法。 - ソリッドステートフィーチャを有する半導体基板と、
前記半導体基板の上の誘電構造と、
前記誘電構造を通って延び、前記ソリッドステートフィーチャに電気的に結合された導電性接点と、
前記誘電構造を通り、前記半導体基板を少なくとも部分的に通って延びるスルー基板ビア(TSV)開口であって、前記接点は前記TSV開口から横方向に離隔されている、スルー基板ビア開口と、
前記TSV開口を裏打ちする第一部分と、前記TSV開口の横方向に外部の前記誘電構造の外部表面の上の第二部分と、を有する誘電ライナー材料と、
前記接点から横方向に離隔されたTSVを画定する、前記TSV開口内の導電性材料と、
前記TSVと整列した少なくとも第一の導線と、前記接点と整列した第二の導線とを含む、前記誘電ライナー材料内の複数の導線であって、前記誘電ライナー材料の前記第一および第二部分は、前記最終デバイスの最終コンポーネントである、複数の導線と、
を含む、
半導体デバイス。 - 前記誘電ライナー材料は、ドープされていない酸化物を含む、
請求項15に記載の半導体デバイス。 - 前記誘電ライナー材料はドープされていない酸化物を含み、
前記TSV開口内の前記導電性材料は銅を含み、
前記誘電ライナー材料の前記第二部分は、前記誘電ライナー材料内の前記導線と少なくともほぼ等しい厚さを有する、
請求項15に記載の半導体デバイス。 - 前記誘電ライナー材料の前記第一および第二部分は連続的である、
請求項15に記載の半導体デバイス。 - 前記誘電ライナー材料の前記第一および第二部分は、互いに一体化されている、
請求項18に記載の半導体デバイス。 - 前記誘電ライナー材料内の前記導線は、銅ダマシン線を含む、
請求項15に記載の半導体デバイス。 - ソリッドステートフィーチャを有する半導体基板と、
前記半導体基板の上の誘電構造と、
前記誘電構造を通り、前記ソリッドステートフィーチャに電気的に結合された導電性接点と、
前記誘電構造を通り、前記半導体基板を少なくとも部分的に通って延びる側壁を有するスルー基板ビア(TSV)開口であって、前記接点は、前記TSV開口から横方向に離隔されている、スルー基板ビア開口と、
前記TSV開口の横方向の外部の前記誘電構造の表面にわたって、前記TSV開口の前記側壁に沿って延びる連続的ライナー誘電材料であって、前記連続的ライナー誘電材料は、前記TSV開口から横方向に離隔された少なくとも一つの開口を有し、前記導電性接点と整列する、連続的ライナー誘電材料と、
TSVを画定する前記TSV開口内の導電性材料と、
前記導電性接点に電気的に結合された導線を画定する前記連続的ライナーを通る前記開口内の導電性材料と、
を含む、
半導体デバイス。 - 前記誘電ライナー材料は、前記TSV開口を裏打ちする第一部分と、前記誘電構造を被覆する第二部分とを有する、
請求項21に記載の半導体デバイス。 - 前記誘電ライナー材料の前記第一および第二部分は、ドープされていない酸化物のコンフォーマル層を含む、
請求項22に記載の半導体デバイス。 - 前記誘電ライナー材料はドープされていない酸化物を含み、
前記TSV開口内の前記導電性材料は銅を含み、
前記誘電構造の前記表面にわたって延びる前記誘電ライナー材料は、前記誘電ライナー材料内の前記導線と少なくともほぼ等しい厚さを有する、
請求項21に記載の半導体デバイス。
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