CN108400205B - 氮化物半导体发光元件的制造方法 - Google Patents

氮化物半导体发光元件的制造方法 Download PDF

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CN108400205B
CN108400205B CN201810104283.2A CN201810104283A CN108400205B CN 108400205 B CN108400205 B CN 108400205B CN 201810104283 A CN201810104283 A CN 201810104283A CN 108400205 B CN108400205 B CN 108400205B
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layer
cycle
gas
nitride semiconductor
semiconductor light
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CN108400205A (zh
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山下智也
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Nichia Corp
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Nichia Corp
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    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
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    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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CN201810104283.2A 2017-02-06 2018-02-01 氮化物半导体发光元件的制造方法 Active CN108400205B (zh)

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CN110957403B (zh) * 2019-12-24 2022-09-30 湘能华磊光电股份有限公司 一种led外延结构生长方法
WO2024035969A1 (en) * 2022-08-12 2024-02-15 The Regents Of The University Of Michigan Light emitting devices and methods of manufacture
CN116012258B (zh) * 2023-02-14 2023-10-13 山东大学 一种基于循环生成对抗网络的图像和谐化方法

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JPH1126382A (ja) * 1997-07-02 1999-01-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体薄膜の製造方法
CN101188264A (zh) * 2006-11-22 2008-05-28 夏普株式会社 氮化物半导体发光器件
CN102754184A (zh) * 2009-12-16 2012-10-24 克里公司 具有调制掺杂的半导体装置结构及相关的方法
CN102859723A (zh) * 2010-02-19 2013-01-02 夏普株式会社 氮化物半导体发光元件及氮化物半导体发光元件的制造方法
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CN108400205A (zh) 2018-08-14
TW201841388A (zh) 2018-11-16
US20180226536A1 (en) 2018-08-09
JP2018129340A (ja) 2018-08-16
KR20180091736A (ko) 2018-08-16
US20210328099A1 (en) 2021-10-21
TWI748053B (zh) 2021-12-01
JP6669095B2 (ja) 2020-03-18
KR102374048B1 (ko) 2022-03-11
US11075320B2 (en) 2021-07-27

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