CN108155900B - 射频开关模块及系统、无线设备、半导体裸芯及其制造方法 - Google Patents

射频开关模块及系统、无线设备、半导体裸芯及其制造方法 Download PDF

Info

Publication number
CN108155900B
CN108155900B CN201711420589.0A CN201711420589A CN108155900B CN 108155900 B CN108155900 B CN 108155900B CN 201711420589 A CN201711420589 A CN 201711420589A CN 108155900 B CN108155900 B CN 108155900B
Authority
CN
China
Prior art keywords
circuit
node
fet
switch
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711420589.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN108155900A (zh
Inventor
F.阿尔滕吉利克
G.布林
H.塞比
H.富
M.苏
J-H.李
A.马丹
N.斯里拉塔纳
C.希
S.斯普林克利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49916656&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN108155900(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of CN108155900A publication Critical patent/CN108155900A/zh
Application granted granted Critical
Publication of CN108155900B publication Critical patent/CN108155900B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
CN201711420589.0A 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法 Active CN108155900B (zh)

Applications Claiming Priority (27)

Application Number Priority Date Filing Date Title
US201261669055P 2012-07-07 2012-07-07
US201261669054P 2012-07-07 2012-07-07
US201261669035P 2012-07-07 2012-07-07
US201261669034P 2012-07-07 2012-07-07
US201261669049P 2012-07-07 2012-07-07
US201261669039P 2012-07-07 2012-07-07
US201261669047P 2012-07-07 2012-07-07
US201261669045P 2012-07-07 2012-07-07
US201261669050P 2012-07-07 2012-07-07
US201261669037P 2012-07-07 2012-07-07
US201261669042P 2012-07-07 2012-07-07
US201261669044P 2012-07-07 2012-07-07
US61/669,044 2012-07-07
US61/669,045 2012-07-07
US61/669,055 2012-07-07
US61/669,047 2012-07-07
US61/669,054 2012-07-07
US61/669,049 2012-07-07
US61/669,039 2012-07-07
US61/669,037 2012-07-07
US61/669,042 2012-07-07
US61/669,034 2012-07-07
US61/669,035 2012-07-07
US61/669,050 2012-07-07
US201361760561P 2013-02-04 2013-02-04
US61/760,561 2013-02-04
CN201380046576.5A CN104604135B (zh) 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380046576.5A Division CN104604135B (zh) 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合

Publications (2)

Publication Number Publication Date
CN108155900A CN108155900A (zh) 2018-06-12
CN108155900B true CN108155900B (zh) 2021-12-28

Family

ID=49916656

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201711420589.0A Active CN108155900B (zh) 2012-07-07 2013-07-06 射频开关模块及系统、无线设备、半导体裸芯及其制造方法
CN201380046576.5A Active CN104604135B (zh) 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合
CN201710243371.6A Active CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备
CN201711419244.3A Active CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN201380046576.5A Active CN104604135B (zh) 2012-07-07 2013-07-06 与基于绝缘体上的硅的射频开关有关的电路、器件和方法及其组合
CN201710243371.6A Active CN107276577B (zh) 2012-07-07 2013-07-06 射频开关及操作方法、半导体裸芯及制造方法、无线设备
CN201711419244.3A Active CN108134596B (zh) 2012-07-07 2013-07-06 开关电路及其制造方法、集成电路、射频器件的封装模块

Country Status (6)

Country Link
EP (2) EP2870694B1 (enExample)
JP (1) JP6026654B2 (enExample)
KR (1) KR102063163B1 (enExample)
CN (4) CN108155900B (enExample)
TW (5) TWI623143B (enExample)
WO (1) WO2014011510A2 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140361847A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Low loss multiple output switch with integrated distributed attenuation
JP6295802B2 (ja) 2014-04-18 2018-03-20 ソニー株式会社 高周波デバイス用電界効果トランジスタおよびその製造方法、ならびに高周波デバイス
US20160134281A1 (en) * 2014-05-19 2016-05-12 Skyworks Solutions, Inc. Switch isolation network
US9438223B2 (en) 2014-05-20 2016-09-06 Qualcomm Incorporated Transistor based switch stack having filters for preserving AC equipotential nodes
TWI580185B (zh) * 2015-03-05 2017-04-21 瑞昱半導體股份有限公司 類比開關電路
JP2016174240A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体スイッチ
WO2016161029A1 (en) * 2015-03-31 2016-10-06 Skyworks Solutions, Inc. Substrate bias for field-effect transistor devices
CN106612113B (zh) * 2015-10-21 2020-08-21 上海新微技术研发中心有限公司 一种提高打开的支路间隔离度的射频开关电路
CN106911326A (zh) * 2015-12-18 2017-06-30 上海新微技术研发中心有限公司 一种可减少偏压控制信号的射频开关
KR101823270B1 (ko) * 2016-07-07 2018-01-29 삼성전기주식회사 커플러 내장형 고주파 스위치 회로 및 장치
US10044341B2 (en) 2016-07-07 2018-08-07 Samsung Electro-Mechanics Co., Ltd. Radio frequency switch circuit and apparatus having built-in coupler
CN106209048A (zh) * 2016-08-22 2016-12-07 江苏卓胜微电子有限公司 一种组合拆分射频开关
WO2018045298A1 (en) * 2016-09-01 2018-03-08 Analog Devices, Inc. Low capacitance switch for pga or pgia
US10560061B2 (en) 2016-09-01 2020-02-11 Analog Devices, Inc. Low capacitance switch for programmable gain amplifier or programable gain instrumentation amplifier
US10200029B2 (en) 2016-09-01 2019-02-05 Analog Devices, Inc. Low capacitance analog switch or transmission gate
JP6623133B2 (ja) 2016-09-05 2019-12-18 株式会社東芝 高周波半導体増幅回路
US10727213B2 (en) * 2016-09-23 2020-07-28 Mitsubishi Electric Corporation Power semiconductor module and power semiconductor device
US10498329B2 (en) * 2016-09-26 2019-12-03 Skyworks Solutions, Inc. Parallel main-auxiliary field-effect transistor configurations for radio frequency applications
KR101823269B1 (ko) * 2016-11-18 2018-01-29 삼성전기주식회사 다이나믹 바이어스를 갖는 고주파 스위치 장치
US10411658B2 (en) 2016-12-14 2019-09-10 Kabushiki Kaisha Toshiba Semiconductor device
KR102624466B1 (ko) 2017-01-12 2024-01-15 삼성전자주식회사 다중 대역 안테나를 구비한 전자 장치 및 다중 대역 안테나를 구비한 전자 장치에서 스위칭 방법
WO2018139495A1 (ja) * 2017-01-30 2018-08-02 株式会社村田製作所 スイッチ回路
CN106972845A (zh) * 2017-04-07 2017-07-21 广东工业大学 一种射频开关电路
TWI697097B (zh) * 2017-04-18 2020-06-21 力智電子股份有限公司 電力開關及其半導體裝置
KR101912289B1 (ko) * 2017-06-28 2018-10-29 삼성전기 주식회사 고조파 감쇠특성을 개선한 고주파 스위치 장치
KR102348686B1 (ko) * 2017-08-04 2022-01-06 삼성전기주식회사 션트 및 바이어스 복합형의 고주파 스위치 장치
CN107819900B (zh) * 2017-10-13 2020-06-05 捷开通讯(深圳)有限公司 一种移动通讯终端及其主板
CN111373657B (zh) * 2017-11-14 2023-10-03 株式会社村田制作所 放大电路、前端电路以及接收电路
US10574212B2 (en) * 2017-11-21 2020-02-25 Mediatek Inc. Method and circuit for low-noise reference signal generation
CN107947775A (zh) * 2017-12-13 2018-04-20 上海华虹宏力半导体制造有限公司 一种改善关断电容的射频开关电路
JP6516029B2 (ja) * 2018-02-19 2019-05-22 ソニー株式会社 電界効果トランジスタおよび無線通信装置
US10680605B2 (en) 2018-02-28 2020-06-09 Infineon Technologies Ag Bias circuit and method for a high-voltage RF switch
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
CN108649953A (zh) * 2018-05-04 2018-10-12 中国电子科技集团公司第二十四研究所 一种基于p阱浮空技术的采样开关及控制方法
CN109194320A (zh) * 2018-09-11 2019-01-11 成都聚利中宇科技有限公司 一种tr开关
CN109450419A (zh) * 2018-11-30 2019-03-08 惠州华芯半导体有限公司 射频开关芯片
KR102670924B1 (ko) 2019-01-24 2024-05-31 삼성전자 주식회사 스위치 및 상기 스위치를 제어하기 위한 스위치 제어 프로세서를 포함하는 증폭기
TWI679829B (zh) * 2019-01-25 2019-12-11 天揚精密科技股份有限公司 多節電池組之穩定供電裝置
EP3719997A1 (de) * 2019-04-01 2020-10-07 Siemens Aktiengesellschaft Beschaltung eines halbleiterschalters
JP6717404B2 (ja) * 2019-04-16 2020-07-01 ソニー株式会社 電界効果トランジスタおよび無線通信装置
KR102636848B1 (ko) * 2019-06-18 2024-02-14 삼성전기주식회사 균등 전압 분배 기능을 갖는 고주파 스위치
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch
KR102234905B1 (ko) * 2020-02-04 2021-03-31 목포대학교산학협력단 무선용 고속 온타임 특성을 갖는 ｒｆ 스위치
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
US11677392B2 (en) 2021-04-16 2023-06-13 Analog Devices International Unlimited Company Bias networks for DC or extended low frequency capable fast stacked switches
CN115378410B (zh) * 2021-05-20 2025-06-03 开元通信技术（厦门）有限公司 一种射频开关电路及射频模块
CN113595579B (zh) * 2021-06-30 2023-03-24 锐石创芯(深圳)科技股份有限公司 射频开关模组和射频开关电路
CN113868937B (zh) * 2021-08-20 2022-08-23 浙江大学 基于动态空间映射的硅场效应管射频开关谐波预测方法
CN113794488B (zh) * 2021-11-15 2022-02-08 成都爱旗科技有限公司 一种射频电路板及射频电路板的制作方法
GB2612851B (en) * 2021-11-16 2024-08-21 Iceye Oy Radio frequency switch driver
CN116192112A (zh) 2021-11-29 2023-05-30 株式会社东芝 半导体装置
CN114884530B (zh) * 2022-04-20 2024-04-19 星宸科技股份有限公司 一种有线收发器
US20230353140A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Biasing body node of a transistor
US12155381B2 (en) 2022-08-22 2024-11-26 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
US12206400B2 (en) 2022-08-22 2025-01-21 Qualcomm Incorporated Dynamic body biasing for radio frequency (RF) switch
EP4659356A1 (en) * 2023-02-01 2025-12-10 Qualcomm Incorporated Dynamic body biasing for radio frequency (rf) switch
JP2024135239A (ja) 2023-03-22 2024-10-04 株式会社東芝 高周波半導体集積回路
CN118590046A (zh) * 2024-06-27 2024-09-03 上海华虹宏力半导体制造有限公司 射频开关及射频终端
CN119730258A (zh) * 2024-12-09 2025-03-28 武汉新芯集成电路股份有限公司 电容结构及其控制方法、半导体器件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1826735A (zh) * 2003-07-22 2006-08-30 皇家飞利浦电子股份有限公司 带有自适应滤波器的天线开关
CN1870433A (zh) * 2005-05-23 2006-11-29 松下电器产业株式会社 射频开关电路和包括它的半导体器件
CN101102103A (zh) * 2006-05-31 2008-01-09 松下电器产业株式会社 射频开关电路、射频开关装置和发射机模块装置
US7710189B2 (en) * 2005-05-27 2010-05-04 Nec Electronics Corporation Semiconductor device for RF switching
US7848712B2 (en) * 2007-05-03 2010-12-07 Intel Corporation CMOS RF switch for high-performance radio systems
US8129787B2 (en) * 2005-07-11 2012-03-06 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5593252A (en) * 1979-01-05 1980-07-15 Mitsubishi Electric Corp Substrate potential generating apparatus
JP2964975B2 (ja) * 1997-02-26 1999-10-18 日本電気株式会社 高周波スイッチ回路
US6281737B1 (en) * 1998-11-20 2001-08-28 International Business Machines Corporation Method and apparatus for reducing parasitic bipolar current in a silicon-on-insulator transistor
US6804502B2 (en) * 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6933572B2 (en) * 2001-10-31 2005-08-23 Micron Technology, Inc. Field-shielded SOI-MOS structure free from floating body effect, and method of fabrication therefor
CN1141787C (zh) * 2002-07-05 2004-03-10 清华大学 变增益的单端到差分的射频低噪声放大器
US6903987B2 (en) * 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
US6992916B2 (en) * 2003-06-13 2006-01-31 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM cell design with high resistor CMOS gate structure for soft error rate improvement
US20050035410A1 (en) * 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
TWI244729B (en) * 2003-08-28 2005-12-01 Renesas Tech Corp Semiconductor memory device and method of manufacturing the same
EP1719244B1 (en) * 2004-02-17 2009-10-28 TELEFONAKTIEBOLAGET LM ERICSSON (publ) Dynamically biased amplifier
JP2005318093A (ja) * 2004-04-27 2005-11-10 Toshiba Corp 高周波スイッチ回路
US7683433B2 (en) * 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7049863B2 (en) * 2004-07-13 2006-05-23 Skyworks Solutions, Inc. Output driver circuit with reduced RF noise, reduced power consumption, and reduced load capacitance susceptibility
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7619462B2 (en) * 2005-02-09 2009-11-17 Peregrine Semiconductor Corporation Unpowered switch and bleeder circuit
US7253675B2 (en) * 2005-03-08 2007-08-07 Texas Instruments Incorporated Bootstrapping circuit capable of sampling inputs beyond supply voltage
JP2006310512A (ja) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP2008011120A (ja) * 2006-06-28 2008-01-17 Toshiba Corp 半導体スイッチ回路
JP2008017416A (ja) * 2006-07-10 2008-01-24 Matsushita Electric Ind Co Ltd 高周波スイッチ装置
JP4342569B2 (ja) * 2007-04-17 2009-10-14 株式会社東芝 高周波スイッチ回路
WO2009022654A1 (ja) * 2007-08-16 2009-02-19 Nec Corporation スイッチ回路及び半導体装置
US20090181630A1 (en) * 2008-01-15 2009-07-16 Kabushiki Kaisha Toshiba Radio frequency switch circuit
JP2009201096A (ja) * 2008-01-22 2009-09-03 Nec Electronics Corp スイッチ回路
US8358155B2 (en) * 2008-01-29 2013-01-22 Oracle America, Inc. Circuit that facilitates proximity communication
US7928794B2 (en) * 2008-07-21 2011-04-19 Analog Devices, Inc. Method and apparatus for a dynamically self-bootstrapped switch
JP5189958B2 (ja) * 2008-11-10 2013-04-24 ルネサスエレクトロニクス株式会社 半導体集積回路およびそれを内蔵した高周波モジュール
TWI515878B (zh) * 2009-07-15 2016-01-01 西拉娜半導體美國股份有限公司 絕緣體上半導體結構、自絕緣體上半導體主動元件之通道去除無用積聚多數型載子之方法、及製造積體電路之方法
US8058922B2 (en) * 2009-07-28 2011-11-15 Qualcomm, Incorporated Switch with improved biasing
WO2011045442A2 (en) * 2009-10-16 2011-04-21 Ferfics Limited Switching system and method
US7952419B1 (en) * 2009-11-16 2011-05-31 Analog Devices, Inc. Bootstrapped switch circuit
US8288895B2 (en) * 2009-11-27 2012-10-16 Samsung Electro-Mechanics High-power tunable capacitor
US8386986B2 (en) * 2009-12-23 2013-02-26 Rf Micro Devices, Inc. Temperature controlled attenuator
CN102107848B (zh) * 2009-12-25 2013-06-05 华东光电集成器件研究所 一种悬浮射频开关的制造方法
US9673802B2 (en) * 2010-04-27 2017-06-06 Qorvo Us, Inc. High power FET switch
US8330519B2 (en) * 2010-07-09 2012-12-11 Sige Semiconductor Inc. System and method of transistor switch biasing in a high power semiconductor switch
CN101958703A (zh) * 2010-07-28 2011-01-26 锐迪科创微电子（北京）有限公司 Soi cmos射频开关及包含该射频开关的射频发射前端模块
US8514008B2 (en) * 2010-07-28 2013-08-20 Qualcomm, Incorporated RF isolation switch circuit
US8629725B2 (en) * 2010-12-05 2014-01-14 Rf Micro Devices (Cayman Islands), Ltd. Power amplifier having a nonlinear output capacitance equalization
JP5814547B2 (ja) * 2010-12-20 2015-11-17 サムソン エレクトロ−メカニックス カンパニーリミテッド． 高周波スイッチ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1826735A (zh) * 2003-07-22 2006-08-30 皇家飞利浦电子股份有限公司 带有自适应滤波器的天线开关
CN1870433A (zh) * 2005-05-23 2006-11-29 松下电器产业株式会社 射频开关电路和包括它的半导体器件
US7710189B2 (en) * 2005-05-27 2010-05-04 Nec Electronics Corporation Semiconductor device for RF switching
US8129787B2 (en) * 2005-07-11 2012-03-06 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
CN101102103A (zh) * 2006-05-31 2008-01-09 松下电器产业株式会社 射频开关电路、射频开关装置和发射机模块装置
US7848712B2 (en) * 2007-05-03 2010-12-07 Intel Corporation CMOS RF switch for high-performance radio systems

Also Published As

Publication number Publication date
CN108134596A (zh) 2018-06-08
HK1249808A1 (zh) 2018-11-09
TWI623142B (zh) 2018-05-01
KR20150034767A (ko) 2015-04-03
TWI628840B (zh) 2018-07-01
CN104604135A (zh) 2015-05-06
HK1207217A1 (en) 2016-01-22
TWI623143B (zh) 2018-05-01
TW201631838A (zh) 2016-09-01
CN107276577A (zh) 2017-10-20
TW201631837A (zh) 2016-09-01
TWI623141B (zh) 2018-05-01
EP2870694B1 (en) 2020-09-09
TW201631835A (zh) 2016-09-01
CN108155900A (zh) 2018-06-12
EP2870694A4 (en) 2016-03-02
EP3823167A1 (en) 2021-05-19
CN107276577B (zh) 2021-07-09
WO2014011510A3 (en) 2014-03-06
CN104604135B (zh) 2018-01-26
TW201631836A (zh) 2016-09-01
CN108134596B (zh) 2021-09-03
HK1249807A1 (zh) 2018-11-09
JP6026654B2 (ja) 2016-11-16
JP2015523810A (ja) 2015-08-13
TW201414071A (zh) 2014-04-01
TWI624110B (zh) 2018-05-11
KR102063163B1 (ko) 2020-01-07
EP2870694A2 (en) 2015-05-13
WO2014011510A2 (en) 2014-01-16

Similar Documents

Publication Publication Date Title
CN108155900B (zh) 射频开关模块及系统、无线设备、半导体裸芯及其制造方法
US9595951B2 (en) Radio-frequency switches having gate bias and frequency-tuned body bias
US9628075B2 (en) Radio-frequency switch having dynamic body coupling
US9590614B2 (en) Non-linearity compensation in radio frequency switches and devices
US20140009212A1 (en) Body-gate coupling to improve linearity of radio-frequency switch
EP3069446A1 (en) Circuits and methods for improved quality factor in a stack of transistors
US20140009213A1 (en) Body-gate coupling to reduce distortion in radio-frequency switch
US9543941B2 (en) Radio-frequency switches having frequency-tuned body bias
HK1240416A1 (en) A radio-frequency switch and operating method thereof, a semiconductor die and fabricating method thereof and awireless device
HK1240416A (en) A radio-frequency switch and operating method thereof, a semiconductor die and fabricating method thereof and awireless device
HK1207217B (en) Circuits, devices, methods and combinations related to silicon-on-insulator based radio-frequency switches
HK1249808B (zh) 开关电路及其制造方法、集成电路、射频器件的封装模块
HK1249807B (zh) 射频开关模块及系统、无线设备、半导体裸芯及其制造方法
HK1240416B (zh) 射频开关及操作方法、半导体裸芯及制造方法、无线设备

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1249807

Country of ref document: HK

GR01 Patent grant
GR01 Patent grant