TWI623143B - 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合 - Google Patents

與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合 Download PDF

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Publication number
TWI623143B
TWI623143B TW105114645A TW105114645A TWI623143B TW I623143 B TWI623143 B TW I623143B TW 105114645 A TW105114645 A TW 105114645A TW 105114645 A TW105114645 A TW 105114645A TW I623143 B TWI623143 B TW I623143B
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Taiwan
Prior art keywords
fet
node
switch
circuit
gate
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TW105114645A
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English (en)
Chinese (zh)
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TW201631837A (zh
Inventor
Fikret Altunkilic
菲柯瑞 阿圖齊力
Guillaume Alexandre Blin
古拉梅 亞歷山卓 布林
Haki Cebi
哈奇 希比
Hanching Fuh
傅漢清
Mengshu HSU
許孟書
Jong-Hoon Lee
李宗勳
Anuj Madan
阿努 曼丹
Nuttapong Srirattana
努塔彭 斯里拉坦那
Chuming Shih
施諸民
Steven Christopher Sprinkle
史蒂芬 克里斯多弗 史賓克勒
Original Assignee
Skyworks Solutions, Inc.
西凱渥資訊處理科技公司
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Application filed by Skyworks Solutions, Inc., 西凱渥資訊處理科技公司 filed Critical Skyworks Solutions, Inc.
Publication of TW201631837A publication Critical patent/TW201631837A/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW105114645A 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合 TWI623143B (zh)

Applications Claiming Priority (26)

Application Number Priority Date Filing Date Title
US201261669034P 2012-07-07 2012-07-07
US201261669042P 2012-07-07 2012-07-07
US201261669035P 2012-07-07 2012-07-07
US201261669054P 2012-07-07 2012-07-07
US201261669049P 2012-07-07 2012-07-07
US201261669039P 2012-07-07 2012-07-07
US201261669047P 2012-07-07 2012-07-07
US201261669045P 2012-07-07 2012-07-07
US201261669050P 2012-07-07 2012-07-07
US201261669055P 2012-07-07 2012-07-07
US201261669044P 2012-07-07 2012-07-07
US201261669037P 2012-07-07 2012-07-07
US61/669,045 2012-07-07
US61/669,050 2012-07-07
US61/669,047 2012-07-07
US61/669,054 2012-07-07
US61/669,039 2012-07-07
US61/669,049 2012-07-07
US61/669,035 2012-07-07
US61/669,044 2012-07-07
US61/669,042 2012-07-07
US61/669,037 2012-07-07
US61/669,055 2012-07-07
US61/669,034 2012-07-07
US201361760561P 2013-02-04 2013-02-04
US61/760,561 2013-02-04

Publications (2)

Publication Number Publication Date
TW201631837A TW201631837A (zh) 2016-09-01
TWI623143B true TWI623143B (zh) 2018-05-01

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TW105114645A TWI623143B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW105114644A TWI623142B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW102124271A TWI624110B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW105114646A TWI628840B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW105114643A TWI623141B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合

Family Applications After (4)

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TW105114644A TWI623142B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW102124271A TWI624110B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW105114646A TWI628840B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
TW105114643A TWI623141B (zh) 2012-07-07 2013-07-05 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合

Country Status (6)

Country Link
EP (2) EP2870694B1 (enExample)
JP (1) JP6026654B2 (enExample)
KR (1) KR102063163B1 (enExample)
CN (4) CN108155900B (enExample)
TW (5) TWI623143B (enExample)
WO (1) WO2014011510A2 (enExample)

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