WO2009022654A1 - スイッチ回路及び半導体装置 - Google Patents

スイッチ回路及び半導体装置 Download PDF

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Publication number
WO2009022654A1
WO2009022654A1 PCT/JP2008/064321 JP2008064321W WO2009022654A1 WO 2009022654 A1 WO2009022654 A1 WO 2009022654A1 JP 2008064321 W JP2008064321 W JP 2008064321W WO 2009022654 A1 WO2009022654 A1 WO 2009022654A1
Authority
WO
WIPO (PCT)
Prior art keywords
switch circuit
high frequency
direct current
current potential
semiconductor device
Prior art date
Application number
PCT/JP2008/064321
Other languages
English (en)
French (fr)
Inventor
Yuji Takahashi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009528114A priority Critical patent/JP5045754B2/ja
Priority to EP08827288.5A priority patent/EP2178210A4/en
Priority to CN2008800010345A priority patent/CN101558563B/zh
Priority to US12/447,521 priority patent/US8054143B2/en
Publication of WO2009022654A1 publication Critical patent/WO2009022654A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0005—Modifications of input or output impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Networks Using Active Elements (AREA)

Abstract

　高周波信号を通過させる、または遮断するためのスイッチ回路であって、高周波信号の直流電位を基準とする正負の変化に対して、いずれかの高周波端子から見たインピーダンスが直流電位を基準に対称に変化するように、スイッチ回路に存在する、直流電位を基準に非対称に変化するインピーダンス成分を補正するための補正回路を有する。
PCT/JP2008/064321 2007-08-16 2008-08-08 スイッチ回路及び半導体装置 WO2009022654A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009528114A JP5045754B2 (ja) 2007-08-16 2008-08-08 スイッチ回路及び半導体装置
EP08827288.5A EP2178210A4 (en) 2007-08-16 2008-08-08 CIRCUIT AND SEMICONDUCTOR DEVICE
CN2008800010345A CN101558563B (zh) 2007-08-16 2008-08-08 开关电路和半导体装置
US12/447,521 US8054143B2 (en) 2007-08-16 2008-08-08 Switch circuit and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007212262 2007-08-16
JP2007-212262 2007-08-16

Publications (1)

Publication Number Publication Date
WO2009022654A1 true WO2009022654A1 (ja) 2009-02-19

Family

ID=40350707

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064321 WO2009022654A1 (ja) 2007-08-16 2008-08-08 スイッチ回路及び半導体装置

Country Status (5)

Country Link
US (1) US8054143B2 (ja)
EP (1) EP2178210A4 (ja)
JP (1) JP5045754B2 (ja)
CN (1) CN101558563B (ja)
WO (1) WO2009022654A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010098051A1 (ja) * 2009-02-25 2010-09-02 日本電気株式会社 高周波スイッチ回路
JP2011015289A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP2011199375A (ja) * 2010-03-17 2011-10-06 New Japan Radio Co Ltd 半導体スイッチ集積回路
JP2015061145A (ja) * 2013-09-18 2015-03-30 新日本無線株式会社 半導体スイッチ回路
US10826490B2 (en) 2017-02-08 2020-11-03 Murata Manufacturing Co., Ltd. Switch circuit

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9276570B2 (en) 2012-07-07 2016-03-01 Skyworks Solutions, Inc. Radio-frequency switch having gate node voltage compensation network
US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US20140009210A1 (en) * 2012-07-07 2014-01-09 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US10147724B2 (en) * 2012-07-07 2018-12-04 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US9160328B2 (en) * 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
TWI623142B (zh) * 2012-07-07 2018-05-01 西凱渥資訊處理科技公司 與基於射頻開關之絕緣體上矽相關之電路、裝置、方法及其組合
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
US9882386B2 (en) * 2014-04-23 2018-01-30 Nec Corporation Consensus-based distributed cooperative control for microgrid voltage regulation and reactive power sharing
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11575373B2 (en) * 2018-10-18 2023-02-07 Qorvo Us, Inc. Switch circuitry
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307232A (ja) 1995-04-28 1996-11-22 Japan Radio Co Ltd Ｆｅｔスイッチ
JPH098621A (ja) * 1995-06-16 1997-01-10 Nec Corp Ｆｅｔスイッチ回路
JPH0918315A (ja) 1995-06-30 1997-01-17 New Japan Radio Co Ltd 半導体スイッチ回路
JP2000223902A (ja) 1999-02-03 2000-08-11 Sanyo Electric Co Ltd スイッチ回路装置
JP2003188695A (ja) * 2001-12-20 2003-07-04 Matsushita Electric Ind Co Ltd 電界効果トランジスタスイッチ回路
JP2005065060A (ja) 2003-08-19 2005-03-10 New Japan Radio Co Ltd 半導体スイッチ回路
JP2005072993A (ja) 2003-08-26 2005-03-17 New Japan Radio Co Ltd Ｆｅｔスイッチ回路
JP2005086420A (ja) 2003-09-08 2005-03-31 New Japan Radio Co Ltd 半導体スイッチ回路
JP2005323030A (ja) 2004-05-07 2005-11-17 New Japan Radio Co Ltd スイッチ半導体集積回路
JP2005341485A (ja) 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd 半導体スイッチ
JP2006042138A (ja) 2004-07-29 2006-02-09 Nec Compound Semiconductor Devices Ltd 高周波スイッチ回路
JP2006211265A (ja) 2005-01-27 2006-08-10 Tdk Corp 半導体スイッチ回路及び受信装置
JP2006303775A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール
JP2007073815A (ja) 2005-09-08 2007-03-22 Toshiba Corp 半導体装置
JP2007212262A (ja) 2006-02-09 2007-08-23 Canon Inc 揺動体装置、電位測定装置、及び光偏向装置
JP2007258766A (ja) 2006-03-20 2007-10-04 New Japan Radio Co Ltd 半導体スイッチ回路
JP2008017416A (ja) 2006-07-10 2008-01-24 Matsushita Electric Ind Co Ltd 高周波スイッチ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3169775B2 (ja) * 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
US6730953B2 (en) * 2002-09-13 2004-05-04 Mia-Com, Inc. Apparatus, methods and articles of manufacture for a low control voltage switch
US7098755B2 (en) * 2003-07-16 2006-08-29 Analog Devices, Inc. High power, high linearity and low insertion loss single pole double throw transmitter/receiver switch
JP2005341695A (ja) 2004-05-26 2005-12-08 Toyota Industries Corp フライバック型電源回路
JP2006030775A (ja) 2004-07-20 2006-02-02 Bridgestone Corp 画像表示用パネル、その製造方法及び画像表示装置

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307232A (ja) 1995-04-28 1996-11-22 Japan Radio Co Ltd Ｆｅｔスイッチ
JPH098621A (ja) * 1995-06-16 1997-01-10 Nec Corp Ｆｅｔスイッチ回路
JPH0918315A (ja) 1995-06-30 1997-01-17 New Japan Radio Co Ltd 半導体スイッチ回路
JP2000223902A (ja) 1999-02-03 2000-08-11 Sanyo Electric Co Ltd スイッチ回路装置
JP3813869B2 (ja) 2001-12-20 2006-08-23 松下電器産業株式会社 電界効果トランジスタスイッチ回路
JP2003188695A (ja) * 2001-12-20 2003-07-04 Matsushita Electric Ind Co Ltd 電界効果トランジスタスイッチ回路
JP2005065060A (ja) 2003-08-19 2005-03-10 New Japan Radio Co Ltd 半導体スイッチ回路
JP2005072993A (ja) 2003-08-26 2005-03-17 New Japan Radio Co Ltd Ｆｅｔスイッチ回路
JP2005086420A (ja) 2003-09-08 2005-03-31 New Japan Radio Co Ltd 半導体スイッチ回路
JP2005323030A (ja) 2004-05-07 2005-11-17 New Japan Radio Co Ltd スイッチ半導体集積回路
JP2005341485A (ja) 2004-05-31 2005-12-08 Matsushita Electric Ind Co Ltd 半導体スイッチ
JP2006042138A (ja) 2004-07-29 2006-02-09 Nec Compound Semiconductor Devices Ltd 高周波スイッチ回路
JP2006211265A (ja) 2005-01-27 2006-08-10 Tdk Corp 半導体スイッチ回路及び受信装置
JP2006303775A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体回路装置および高周波電力増幅モジュール
JP2007073815A (ja) 2005-09-08 2007-03-22 Toshiba Corp 半導体装置
JP2007212262A (ja) 2006-02-09 2007-08-23 Canon Inc 揺動体装置、電位測定装置、及び光偏向装置
JP2007258766A (ja) 2006-03-20 2007-10-04 New Japan Radio Co Ltd 半導体スイッチ回路
JP2008017416A (ja) 2006-07-10 2008-01-24 Matsushita Electric Ind Co Ltd 高周波スイッチ装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2178210A4 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010098051A1 (ja) * 2009-02-25 2010-09-02 日本電気株式会社 高周波スイッチ回路
JP5348239B2 (ja) * 2009-02-25 2013-11-20 日本電気株式会社 高周波スイッチ回路
JP2011015289A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP2011199375A (ja) * 2010-03-17 2011-10-06 New Japan Radio Co Ltd 半導体スイッチ集積回路
JP2015061145A (ja) * 2013-09-18 2015-03-30 新日本無線株式会社 半導体スイッチ回路
US10826490B2 (en) 2017-02-08 2020-11-03 Murata Manufacturing Co., Ltd. Switch circuit

Also Published As

Publication number Publication date
EP2178210A4 (en) 2015-06-03
US20100060377A1 (en) 2010-03-11
EP2178210A1 (en) 2010-04-21
US8054143B2 (en) 2011-11-08
CN101558563B (zh) 2013-03-06
JPWO2009022654A1 (ja) 2010-11-18
JP5045754B2 (ja) 2012-10-10
CN101558563A (zh) 2009-10-14

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