CN107910335A - 柔性显示面板、柔性显示面板制作方法及显示装置 - Google Patents
柔性显示面板、柔性显示面板制作方法及显示装置 Download PDFInfo
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- 239000010410 layer Substances 0.000 claims abstract description 119
- 239000011229 interlayer Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 239000012212 insulator Substances 0.000 claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 8
- 241001391944 Commicarpus scandens Species 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
本发明提供一种柔性显示面板,包括柔性衬底、形成于柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层,所述第二层间绝缘层上形成有第一通孔连通源漏极金属层及有源层,及第二接触孔连通源漏金属层及第二层间绝缘层。本发明还提供一种柔性显示面板的制作方法及包括显示面板的显示装置。本发明的柔性显示面板,可保证柔性显示面板在弯折过程中的正常显示。
Description
技术领域
本发明涉及一种显示装置、柔性显示面板及柔性显示面板的制作方法。
背景技术
随着显示面板技术的发展,近几年柔性显示面板显示技术得到了飞速的发展,但是柔性显示面板在弯折过程中钛铝钛走线容易断裂,导致显示面板被损坏。
发明内容
有鉴于此,本发明提供一种显示装置、柔性显示面板及其制作方法,旨在解决上述的技术问题。
本发明提供一种柔性显示面板,所述显示面板包括柔性衬底、形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层,所述第二层间绝缘层上形成有第一通孔和第二接触孔,所述源漏极金属层通过所述第一通孔与有源层连通,所述源漏金属层通过第二接触孔与第二层间绝缘层连通。
其中,第一通孔的深度大于所述第二接触孔的深度。
其中,所述第一通孔贯穿所述第二层间绝缘层、所述层间绝缘层、所述第二层绝缘层及所述栅极绝缘层,并止于所述有源层。
其中,所述第二接触孔为开设于所述第二层间绝缘层上的盲孔。
其中,所述第一通孔的数量为两个。
其中,所述第一通孔和第二接触孔的数量相等。
其中,所述栅极金属层及第二层金属层为材料钼制成,所述第二层间绝缘层为材料聚酰亚胺制成。
本发明还提供一种柔性显示面板的制作方法,所述柔性显示面板包括柔性衬底,所述制作方法包括以下步骤:
形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层;及
形成于所述第二层间绝缘层上的第一通孔和第二接触孔,其中,第一通孔连通所述源漏极金属层与所述有源层,第二接触孔连通所述源漏金属层与所述第二层间绝缘层。
本发明还提供一种显示装置,其包括上述的柔性显示面板。
本发明所述的显示装置、柔性显示面板及其制作方法,通过在第二层间绝缘层上设置深度不同的第一通孔和第二接触孔来保证显示面板在弯折过程中不易断裂,保证柔性显示面板在弯折过程中正常显示。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明一实施例中的显示装置的模块示意图。
图2是本发明一实施例中的柔性显示面板的结构示意图。
图3是本发明柔性显示面板的制作方法流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1至2所示,为本发明一实施例中显示装置1的示意图。本实施方式中,该显示装置1可以为液晶显示器、液晶电视、手机、平板电脑等。该显示装置1包括柔性显示面板100。该柔性显示面板100包括透明玻璃基板101、涂覆于所述透明玻璃基板101上的柔性衬底102、形成于所述柔性衬底上的阻挡层103、形成于阻挡层103上的缓冲层104、形成于缓冲层104上的有源层112及栅极绝缘层105、形成于栅极绝缘层105上的栅极金属层111及第二层绝缘层106、形成于第二层绝缘层106上的第二层金属层110及层间绝缘层107、形成于层间绝缘层107上的第二层间绝缘层108及形成于第二层间绝缘层108上的源漏极金属层109。本实施方式中,所述有源层112置于所述缓冲层104与栅极绝缘层105之间,所述栅极金属层111置于所述栅极绝缘层105与第二层绝缘层106之间,所述第二层金属层110置于所述第二层绝缘层106与所述层间绝缘层107之间。
在本实施方式中,所述源漏极金属层109为材料钛和铝制成。所述第二层间绝缘层108上采用Halftone光罩的方式形成有绝缘层图案。所述柔性衬底102的厚度为10~20um。所述阻挡层103的厚度为500~1000nm、所述缓冲层104的厚度为200~300nm、所述有源层112的厚度为40~50nm、所述栅极绝缘层105的厚度为50~200nm及所述栅极金属层111的厚度为150~250nm。所述第二层绝缘层106的厚度为50~200nm及所述第二层金属层110的厚度为150~250nm。所述层间绝缘层107的厚度为500~700nm、所述第二层间绝缘层108的厚度为1.0~3um及所述源漏极金属层109的厚度为400~600nm。所述栅极金属层111及第二层金属层110为材料钼制成,所述第二层间绝缘层108为材料聚酰亚胺制成。
所述第二层间绝缘层108上形成有第一通孔113及第二接触孔114。本实施方式中,该第一通孔113的数量为两个,所述第一通孔113和第二接触孔114的数量相等。其他实施方式中,该第一通孔113及第二接触孔114的数量可根据柔性显示面板的尺寸,形状,结构或其他相关参数等的不同进行不同的设置。本实施方式中,该第一通孔113及第二接触孔114的形状可相同也可不同,具体形状可为圆形也可为方形,但是并不限定于此。该第一通孔113的深度大于所述第二接触孔的深度。
所述源漏极金属层109通过所述第一通孔113与所述有源层112连通,所述源漏金属层109通过第二接触孔114与所述第二层间绝缘层108连通,如此,可以保证显示面板100在弯折过程中,钛铝钛走线不易断裂,保证柔性显示面板在弯折过程中正常显示。具体地,该第一通孔113贯穿该第二层间绝缘层108、该层间绝缘层107、该第二层绝缘层106及该栅极绝缘层105,并止于该有源层112,该第二接触孔114为开设于所述第二层间绝缘层108上的盲孔。
如图3所示,为本发明柔性显示面板的制作方法,该方法包括以下步骤:
步骤S301,形成于所述柔性衬底上的阻挡层103、形成于阻挡层103上的缓冲层104、形成于缓冲层104上的有源层112及栅极绝缘层105、形成于栅极绝缘层105上的栅极金属层111及第二层绝缘层106、形成于第二层绝缘层106上的第二层金属层110及层间绝缘层107、形成于层间绝缘层107上的第二层间绝缘层108及形成于第二层间绝缘层108上的源漏极金属层109。
步骤S302,形成于所述第二层间绝缘层108上的第一通孔113和第二接触孔114,其中,第一通孔113连通所述源漏极金属层109与所述有源层112,第二接触孔114连通所述源漏金属层109与所述第二层间绝缘层108。
本发明的柔性显示面板100,通过在第二层间绝缘层108上设置深度不同的第一通孔113及第二接触孔114来保证显示面板100在弯折过程中不易断裂,保证柔性显示面板在弯折过程中正常显示。
以上所揭露的仅为本发明较佳实施例而已,当然不能以此来限定本发明之权利范围,本领域普通技术人员可以理解实现上述实施例的全部或部分流程,并依本发明权利要求所作的等同变化,仍属于发明所涵盖的范围。
Claims (10)
1.一种柔性显示面板,所述显示面板包括柔性衬底、形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层,其特征在于:所述第二层间绝缘层上形成有第一通孔和第二接触孔,所述源漏极金属层通过所述第一通孔与所述有源层连通,所述源漏金属层通过第二接触孔与所述第二层间绝缘层连通。
2.如权利要求1所述的柔性显示面板,其特征在于:第一通孔的深度大于所述第二接触孔的深度。
3.如权利要求1所述的柔性显示面板,其特征在于:所述第一通孔贯穿所述第二层间绝缘层、所述层间绝缘层、所述第二层绝缘层及所述栅极绝缘层并止于所述有源层。
4.如权利要求1所述的柔性显示面板,其特征在于:所述第二接触孔为开设于所述第二层间绝缘层上的盲孔。
5.如权利要求1所述的柔性显示面板,其特征在于:所述第一通孔的数量为两个。
6.如权利要求5所述的柔性显示面板,其特征在于:所述第一通孔和第二接触孔的数量相等。
7.如权利要求1所述的柔性显示面板,其特征在于:所述栅极金属层及第二层金属层为材料钼制成,所述第二层间绝缘层为材料聚酰亚胺制成。
8.一种柔性显示面板的制作方法,所述柔性显示面板包括柔性衬底,其特征在于:所述制作方法包括以下步骤:
形成于所述柔性衬底上的阻挡层、形成于阻挡层上的缓冲层、形成于缓冲层上的有源层及栅极绝缘层、形成于栅极绝缘层上的栅极金属层及第二层绝缘层、形成于第二层绝缘层上的第二层金属层及层间绝缘层、形成于层间绝缘层上的第二层间绝缘层及形成于第二层间绝缘层上的源漏极金属层;及
形成于所述第二层间绝缘层上的第一通孔和第二接触孔,其中,第一通孔连通所述源漏极金属层与所述有源层,第二接触孔连通所述源漏金属层与所述第二层间绝缘层。
9.如权利要求8所述的柔性显示面板的制作方法,其特征在于:所述第一通孔的深度大于所述第二接触孔的深度。
10.一种显示装置,其特征在于:其包括如权利要求1至7中任意一项所述的柔性显示面板。
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