CN104460146A - Boa型液晶面板及其制作方法 - Google Patents
Boa型液晶面板及其制作方法 Download PDFInfo
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- CN104460146A CN104460146A CN201410642135.8A CN201410642135A CN104460146A CN 104460146 A CN104460146 A CN 104460146A CN 201410642135 A CN201410642135 A CN 201410642135A CN 104460146 A CN104460146 A CN 104460146A
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- substrate
- liquid crystal
- type liquid
- crystal panel
- layer
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 146
- 239000010410 layer Substances 0.000 claims abstract description 63
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
本发明提供一种BOA型液晶面板及其制作方法,所述BOA型液晶面板包括第一基板、与所述第一基板相对设置的第二基板、设于所述第一基板上的黑色矩阵、设于所述黑色矩阵上的薄膜晶体管、设于所述第二基板上的色阻层、设于所述第二基板和色阻层上的公共电极层、设于所述公共电极层上位于第一基板与第二基板之间的光阻间隔物、及设于所述第一基板与第二基板之间的液晶层,本发明通过将液晶面板的黑色矩阵设于在基板上预先形成的沟道内部,从而使得液晶面板的膜厚变得均匀,提高了液晶面板的显示效果。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种BOA型液晶面板及其制作方法。
背景技术
液晶显示装置(Liquid Crystal Display,LCD)具有机身薄、省电、无辐射等众多优点,得到了广泛的应用,如:移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有市场上的液晶显示装置大部分为背光型液晶显示装置,其包括背光模组(Backlight module)及结合于背光模组上的液晶面板。
在TFT-LCD(Thin Film Transistor Liquid Crystal Display,薄膜晶体管液晶显示器)中,通常会在基板上制作一层BM(Black Matrix,黑色矩阵),用于分割相邻色阻,遮挡色彩的空隙,防止漏光或者混色,将黑色矩阵制备在TFT阵列基板的技术叫做BOA(BM On Array,黑色矩阵贴附于阵列基板),BOA可以解决上下基板错位导致遮光区域不匹配的问题,这种对曲面显示器尤其有用。
如图1所示,现有BOA型的液晶面板的制程中,直接在阵列基板100上制备一层黑色矩阵120,这样会使阵列基板100的BM区域的膜层厚度h1增加。图2所示为一种非BOA(BM on CF)型的结构,即黑色矩阵120设于CF基板200上,可见图1中BOA型的液晶面板的膜层厚度h1要大于图2中的非BOA型的液晶面板的膜层厚度h2。因此,对于BOA型液晶面板来说,由于TFT基板上设置黑色矩阵位置的膜厚增加,这导致BM区域和非BM区域的膜厚段差变大,也使得在BM和非BM区域膜层的拔模角变得更加陡峭,在进行后续金属制程的时候,会出现拔模角太大导致的断线风险,导致一些不良出现。如果增加平坦层又会增加一些额外的工艺制程,从而衍生出其他一些问题。
发明内容
本发明的目的在于提供一种BOA型液晶面板,将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部,从而使得液晶面板的膜厚变得均匀,显示效果好。
本发明的另一目的在于提供一种BOA型液晶面板的制作方法,在TFT制程之前预先在基板上设置沟道,并在沟道中形成黑色矩阵,从而使得液晶面板的膜厚变得均匀,提高显示器的显示效果。
为实现上述目的,本发明提供一种BOA型液晶面板,包括第一基板、与所述第一基板相对设置的第二基板、设于所述第一基板上的黑色矩阵、设于所述黑色矩阵上的薄膜晶体管、设于所述第二基板上的色阻层、设于所述第二基板和色阻层上的公共电极层、设于所述公共电极层上且位于第一基板与第二基板之间的光阻间隔物、及设于所述第一基板与第二基板之间的液晶层,所述第一基板上设有沟道,所述黑色矩阵设于所述沟道内部,所述第一基板表面与所述黑色矩阵表面平齐。
所述第一基板与第二基板均为玻璃基板。
所述第一基板为TFT基板,第二基板为CF基板。
所述薄膜晶体管包括设于所述第一基板上的第一金属层、设于所述第一金属层上并覆盖第一基板的栅极绝缘层、设于所述栅极绝缘层上的半导体层、设于所述半导体层上的第二金属层、及设于所述第二金属层上并覆盖第一基板的绝缘保护层。
所述栅极绝缘层的材料为氮化硅。
所述半导体层的材料为非晶硅或多晶硅。
本发明还提供一种BOA型液晶面板的制作方法,包括如下步骤:
步骤1、提供第一基板与第二基板,并对所述第一基板与第二基板进行清洗;
步骤2、在所述第一基板上制作沟道;
步骤3、在所述沟道中形成黑色矩阵;
步骤4、在所述黑色矩阵上制作薄膜晶体管;
步骤5、在所述第二基板上形成色阻层,在第二基板和色阻层上形成公共电极层,并在所述公共电极层上形成光阻间隔物;
步骤6、在所述第一基板与第二基板之间灌注液晶分子,形成液晶层,并对所述第一基板与第二基板进行封装。
所述步骤1中的第一基板与第二基板均为玻璃基板。
所述步骤2中通过光刻或蚀刻在所述第一基板上制作沟道。
所述步骤4包括依次在所述第一基板上形成第一金属层、栅极绝缘层、半导体层、第二金属层、及绝缘保护层的步骤。
本发明的有益效果:本发明的BOA型液晶面板,将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部,从而使得液晶面板的膜厚变得均匀,显示效果好。本发明提供的BOA型液晶面板的制作方法,在TFT制程之前预先在基板上设置沟道,并在沟道中形成黑色矩阵,从而使得液晶面板的膜厚变得均匀,提高显示器的显示效果。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有BOA型液晶面板的剖面示意图;
图2为一种非BOA型液晶面板的剖面示意图;
图3为本发明BOA型液晶面板的剖面示意图;
图4为本发明BOA型液晶面板的制作方法的示意流程图;
图5为本发明BOA型液晶面板的制作方法步骤2的剖面示意图;
图6为本发明BOA型液晶面板的制作方法步骤2的俯视示意图;
图7为本发明BOA型液晶面板的制作方法步骤3的剖面示意图;
图8为本发明BOA型液晶面板的制作方法步骤3的俯视示意图;
图9为本发明BOA型液晶面板的制作方法步骤4的剖面示意图;
图10为本发明BOA型液晶面板的制作方法步骤5的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3,本发明提供一种BOA型液晶面板,包括第一基板1、与所述第一基板1相对设置的第二基板2、设于所述第一基板1内的黑色矩阵12、设于所述黑色矩阵12上的薄膜晶体管13、设于所述第二基板2上的色阻层21、设于所述第二基板2和色阻层21上的公共电极层22、设于所述公共电极层22上且位于第一基板1与第二基板2之间的光阻间隔物23、及设于所述第一基板1与第二基板2之间的液晶层3,所述第一基板1上设有沟道11,所述黑色矩阵12设于所述沟道11内部,所述第一基板1表面与所述黑色矩阵12表面平齐。
优选的,所述第一基板1与第二基板2均为玻璃基板,所述第一基板1为TFT基板,所述第二基板2为CF基板。具体地,所述薄膜晶体管13包括设于所述第一基板1上的第一金属层101、设于所述第一金属层101上并覆盖第一基板1的栅极绝缘层102、设于所述栅极绝缘层102上的半导体层103、设于所述半导体层103上的第二金属层105、及设于所述第二金属层105上并覆盖第一基板1的绝缘保护层106。
具体的,所述第一金属层101作为薄膜晶体管13的栅极,所述第二金属层105作为薄膜晶体管13的源极或漏极。
优选的,所述栅极绝缘层102的材料为氮化硅(SiNx)。
优选的,所述半导体层103的材料为多晶硅或非晶硅。
请参阅图4,本发明还提供一种BOA型液晶面板的制作方法,包括如下步骤:
步骤1、提供第一基板1与第二基板2,并对所述第一基板1与第二基板2进行清洗。
优选的,所述第一基板1与第二基板2均为玻璃基板,所述第一基板1为TFT基板,所述第二基板2为CF基板。
步骤2、如图5与图6所示,在所述第一基板1上制作沟道11。
具体地,根据欲形成的黑色矩阵的形状,采用光刻或蚀刻在所述第一基板1上制作沟道11,图6所示为在第一基板1上制作的沟道11的局部俯视示意图。
步骤3、如图7与图8所示,在所述沟道11中形成黑色矩阵12。
具体地,根据沟道11的深度及宽度计算出所需要填充的黑色矩阵材料的量,并使得填入的黑色矩阵材料正好填满沟道11,图8所示为填充黑色矩阵材料后的沟道11的局部俯视示意图。
步骤4、如图9所示,在所述黑色矩阵12上制作薄膜晶体管13。
具体地,依次在所述第一基板1上形成第一金属层101、栅极绝缘层102、半导体层103、第二金属层105、及绝缘保护层106。所述第一金属层101作为薄膜晶体管13的栅极,所述第二金属层105作为薄膜晶体管13的源极或漏极。
步骤5、如图10所示,在所述第二基板2上形成色阻层21,在所述第二基板2和色阻层21上形成公共电极层22,并在所述公共电极层22上形成光阻间隔物23。所述光阻间隔物23起到支撑第一基板1和第二基板2的作用,用于维持液晶层的厚度。
步骤6、在所述第一基板1与第二基板2之间灌注液晶分子,形成液晶层3,并对所述第一基板1与第二基板2进行封装。
具体地,在所述第一基板1与第二基板2之间涂覆UV胶(未示出),并在真空环境下将所述第一基板1与第二基板2进行贴合。使用UV光照射或加热使所述UV胶固化,从而完成液晶面板的封装,完成封装后的液晶面板的剖面示意图如图3所示。
综上所述,本发明提供的BOA型液晶面板,通过将该液晶面板的黑色矩阵设于在基板上预先形成的沟道内部,从而使得液晶面板的膜厚变得均匀,显示效果好。本发明提供的BOA型液晶面板的制作方法,在TFT制程之前预先在基板上设置沟道,并在沟道中形成黑色矩阵,从而使得液晶面板的膜厚变得均匀,提高显示器的显示效果。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种BOA型液晶面板,包括第一基板(1)、与所述第一基板(1)相对设置的第二基板(2)、设于所述第一基板(1)上的黑色矩阵(12)、设于所述黑色矩阵(12)上的薄膜晶体管(13)、设于所述第二基板(2)上的色阻层(21)、设于所述第二基板(2)和色阻层(21)上的公共电极层(22)、设于所述公共电极层(22)上且位于第一基板(1)与第二基板(2)之间的光阻间隔物(23)、及设于所述第一基板(1)与第二基板(2)之间的液晶层(3),其特征在于,所述第一基板(1)上设有沟道(11),所述黑色矩阵(12)设于所述沟道(11)内部,所述第一基板(1)表面与所述黑色矩阵(12)表面平齐。
2.如权利要求1所述的BOA型液晶面板,其特征在于,所述第一基板(1)与第二基板(2)均为玻璃基板。
3.如权利要求1所述的BOA型液晶面板,其特征在于,所述第一基板(1)为TFT基板,第二基板(2)为CF基板。
4.如权利要求1所述的BOA型液晶面板,其特征在于,所述薄膜晶体管(13)包括设于所述第一基板(1)上的第一金属层(101)、设于所述第一金属层(101)上并覆盖第一基板(1)的栅极绝缘层(102)、设于所述栅极绝缘层(102)上的半导体层(103)、设于所述半导体层(103)上的第二金属层(105)、及设于所述第二金属层(105)上并覆盖第一基板(1)的绝缘保护层(106)。
5.如权利要求4所述的BOA型液晶面板,其特征在于,所述栅极绝缘层(102)的材料为氮化硅。
6.如权利要求4所述的BOA型液晶面板,其特征在于,所述半导体层(103)的材料为非晶硅或多晶硅。
7.一种BOA型液晶面板的制作方法,其特征在于,包括如下步骤:
步骤1、提供第一基板(1)与第二基板(2),并对所述第一基板(1)与第二基板(2)进行清洗;
步骤2、在所述第一基板(1)上制作沟道(11);
步骤3、在所述沟道(11)中形成黑色矩阵(12);
步骤4、在所述黑色矩阵(12)上制作薄膜晶体管(13);
步骤5、在所述第二基板(2)上形成色阻层(21),在所述色阻层(21)和第二基板(2)上形成公共电极层(22),并在所述公共电极层(22)上形成光阻间隔物(23);
步骤6、在所述第一基板(1)与第二基板(2)之间灌注液晶分子,形成液晶层(3),并对所述第一基板(1)与第二基板(2)进行封装。
8.如权利要求7所述的BOA型液晶面板的制作方法,其特征在于,所述步骤1中的第一基板(1)与第二基板(2)均为玻璃基板。
9.如权利要求7所述的BOA型液晶面板的制作方法,其特征在于,所述步骤2中通过光刻或蚀刻在所述第一基板(1)上制作沟道(11)。
10.如权利要求7所述的BOA型液晶面板的制作方法,其特征在于,所述步骤4包括依次在所述第一基板(1)上形成第一金属层(101)、栅极绝缘层(102)、半导体层(103)、第二金属层(105)、及绝缘保护层(106)的步骤。
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CN110673383A (zh) * | 2019-09-24 | 2020-01-10 | 深圳市华星光电技术有限公司 | 显示面板及其制备方法 |
WO2020042240A1 (zh) * | 2018-08-30 | 2020-03-05 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示装置 |
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US20160342046A1 (en) | 2016-11-24 |
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