WO2021217841A1 - 柔性显示面板及其制作方法 - Google Patents

柔性显示面板及其制作方法 Download PDF

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Publication number
WO2021217841A1
WO2021217841A1 PCT/CN2020/097814 CN2020097814W WO2021217841A1 WO 2021217841 A1 WO2021217841 A1 WO 2021217841A1 CN 2020097814 W CN2020097814 W CN 2020097814W WO 2021217841 A1 WO2021217841 A1 WO 2021217841A1
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WIPO (PCT)
Prior art keywords
layer
source
display panel
drain metal
flexible display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/097814
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English (en)
French (fr)
Inventor
赵慧慧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Filing date
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to EP20917294.9A priority Critical patent/EP4148795A4/en
Priority to JP2021523496A priority patent/JP2022534635A/ja
Priority to US17/054,290 priority patent/US11758782B2/en
Publication of WO2021217841A1 publication Critical patent/WO2021217841A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display technology, in particular to a flexible display panel and a manufacturing method thereof.
  • OLED organic light-emitting diode
  • the flexible folding display needs to be rolled or bent during use, or even bends frequently. As the number of bending increases, it is easy to cause the wire resistance of the source and drain metal layers to increase, resulting in a decrease in the brightness of the display. The source and drain metal layer traces are broken, causing poor display.
  • the flexible display panel and the manufacturing method thereof provided by the present invention solve the problem that with the continuous increase in the number of bending of the existing flexible display panel, it is easy to cause the line resistance of the source and drain metal layer wiring to increase, resulting in a decrease in brightness and a source and drain.
  • the embodiment of the present invention provides a flexible display panel including a bending area and a non-bending area, and the flexible display panel includes:
  • the inorganic layer is arranged on the base substrate;
  • the organic filling layer is arranged on the inorganic layer, and the organic filling layer is made of polyimide;
  • the source-drain metal layer trace is disposed on the organic filling layer, and the source-drain metal layer trace includes a first source-drain metal layer trace located in the bending area and a trace located in the non-bending area.
  • the second source and drain metal layer traces of the region, the first source and drain metal layer traces are curved traces;
  • the flat layer is arranged on the side of the source and drain metal layer away from the base substrate.
  • the inorganic layer includes:
  • the water and oxygen barrier layer is arranged on the base substrate;
  • the buffer layer is arranged on the water and oxygen barrier layer
  • the active layer is arranged on the buffer layer
  • the first gate layer wiring is arranged on the first insulating layer
  • a second insulating layer covering the first insulating layer and the wiring of the first gate layer
  • the second gate layer wiring is arranged on the second insulating layer.
  • An interlayer dielectric layer covering the second insulating layer and the second gate layer wiring;
  • the source-drain layer traces are disposed on the organic filling layer, and the source-drain metal layer traces pass through the first insulating layer, the second insulating layer, and the interlayer dielectric layer.
  • the first via hole is connected to the active layer, and the organic filling layer is located between the source and drain metal layer traces and the interlayer dielectric layer.
  • the organic filling layer corresponding to the bending area is provided with at least one groove structure on the side away from the base substrate, and the first source/drain metal
  • the layer wiring forms a curved wiring through the groove structure.
  • the bottom of the groove structure is in contact with the organic filling layer, and the first source and drain metal layer traces are located between the organic filling layer and the flat layer. between.
  • the groove structure penetrates the organic filling layer, and the first source and drain metal layer traces are located in the interlayer dielectric layer, the organic filling layer, and the Between flat layers.
  • the aperture of the groove structure is 2um-20um.
  • the cross-sectional shape of the groove structure includes a trapezoid, a rectangle, a square, a circle, a diamond, or a triangle.
  • the flexible display panel further includes a second via hole disposed in the bending area, and the second via hole penetrates the interlayer dielectric layer and the second insulating layer. Layer, the first insulating layer and the buffer layer, and the organic filling layer is filled in the second via hole.
  • the embodiment of the present invention provides a flexible display panel including a bending area and a non-bending area, and the flexible display panel includes:
  • the inorganic layer is arranged on the base substrate;
  • the organic filling layer is arranged on the inorganic layer
  • the source-drain metal layer trace is disposed on the organic filling layer, and the source-drain metal layer trace includes a first source-drain metal layer trace located in the bending area and a trace located in the non-bending area.
  • the second source and drain metal layer traces of the region, the first source and drain metal layer traces are curved traces;
  • the flat layer is arranged on the side of the source and drain metal layer away from the base substrate.
  • the inorganic layer includes:
  • the water and oxygen barrier layer is arranged on the base substrate;
  • the buffer layer is arranged on the water and oxygen barrier layer
  • the active layer is arranged on the buffer layer
  • the first gate layer wiring is arranged on the first insulating layer
  • a second insulating layer covering the first insulating layer and the wiring of the first gate layer
  • the second gate layer wiring is arranged on the second insulating layer.
  • An interlayer dielectric layer covering the second insulating layer and the second gate layer wiring;
  • the source-drain layer traces are disposed on the organic filling layer, and the source-drain metal layer traces pass through the first insulating layer, the second insulating layer, and the interlayer dielectric layer.
  • the first via hole is connected to the active layer, and the organic filling layer is located between the source and drain metal layer traces and the interlayer dielectric layer.
  • the organic filling layer corresponding to the bending area is provided with at least one groove structure on the side away from the base substrate, and the first source/drain metal
  • the layer wiring forms a curved wiring through the groove structure.
  • the bottom of the groove structure is in contact with the organic filling layer, and the first source and drain metal layer traces are located between the organic filling layer and the flat layer. between.
  • the groove structure penetrates the organic filling layer, and the first source and drain metal layer traces are located in the interlayer dielectric layer, the organic filling layer, and the Between flat layers.
  • the aperture of the groove structure is 2um-20um.
  • the depth of the groove structure is 0.5um ⁇ 1.5um.
  • the cross-sectional shape of the groove structure includes a trapezoid, a rectangle, a square, a circle, a diamond, or a triangle.
  • the flexible display panel further includes a second via hole disposed in the bending area, and the second via hole penetrates the interlayer dielectric layer and the second insulating layer. Layer, the first insulating layer and the buffer layer, and the organic filling layer is filled in the second via hole.
  • the buffer layer is made of silicon nitride or silicon oxide.
  • the embodiment of the present invention provides a manufacturing method of a flexible display panel, which includes the following steps:
  • S40 forming a source and drain metal layer on the organic filling layer, and patterning the source and drain metal layer to form a first source and drain metal layer trace in the bending area, and The non-bending area forms a second source-drain metal layer trace, wherein the first source-drain metal layer trace forms a curved trace through the groove structure;
  • the step S20 includes the following steps:
  • S201 sequentially forming a water and oxygen barrier layer, a buffer layer, an active layer, a first insulating layer, a first gate layer wiring, a second insulating layer, a second gate layer wiring, and a layer on the base substrate.
  • Intermediate layer and
  • the beneficial effects of the present invention are: the flexible display panel provided by the present invention and the manufacturing method thereof, by designing the source and drain metal layer traces to be curved, so that when the flexible display panel is bent, the source and drain metal layer
  • the traces are alternately subjected to compressive stress and tensile stress, and the compressive stress and tensile stress can be neutralized and offset to reduce the stress, thereby reducing the resistance change of the source and drain metal layer traces caused by bending, thereby reducing the factor Optical changes caused by resistance changes; at the same time, it can reduce the risk of breakage of the source and drain metal layer traces, and improve the product performance of the flexible display panel.
  • FIG. 1 is a schematic diagram of a planar structure of a flexible display panel provided by an embodiment of the present invention
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a flexible display panel along A-A according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a cross-sectional structure of a flexible display panel along B-B according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of a cross-sectional structure along B-B of another flexible display panel according to an embodiment of the present invention.
  • FIG. 5 is a flowchart of a manufacturing method of a flexible display panel provided by an embodiment of the present invention.
  • 6A to 6G are schematic diagrams of the flow structure of a manufacturing method of a flexible display panel provided by an embodiment of the present invention.
  • the present invention is directed to the prior art flexible display panel. As the number of bending increases, the wire resistance of the source and drain metal layer traces is likely to increase, resulting in a decrease in brightness and breakage of the source and drain metal layer traces. The embodiment can solve this defect.
  • the flexible display panel 1 provided by the embodiment of the present invention includes a display area, an integrated chip and a flexible circuit board are located at the edge of the display area; the display area includes a bending area 1a and a non-bending area 1b, the bending area 1a refers to an area that needs to be bent or folded, the non-bending area 1b refers to an area that does not need to be bent or folded, the bending area 1a and the non-bending area 1b Both can be used to display pictures; wherein, the bending area 1a can be located at any position of the display area. Taking into account user habits, in the embodiment of the present invention, the bending area 1a is located in the middle of the display area, The flexible display panel 1 can be bent or folded along the bending axis of the bending area 1a.
  • the flexible display panel 1 includes an array substrate, the array substrate further includes a base substrate 10, the base substrate 10 is a flexible substrate, which can be made of polyamide Polyamide (PI) material.
  • PI polyamide Polyamide
  • an inorganic layer 20 is provided on the base substrate 10.
  • the inorganic layer 20 includes, but is not limited to, a water and oxygen barrier layer 201, a buffer layer 202, The active layer 203, the first insulating layer 204, the first gate layer wiring 205, the second insulating layer 206, the second gate layer wiring 207, and the interlayer dielectric layer 208, in the embodiment of the present invention, the The inorganic layer 20 includes: a water and oxygen barrier layer 201 disposed on the base substrate 10, and the water and oxygen barrier layer 201 is used to prevent external moisture or oxygen from corroding the device layer of the flexible display panel 1;
  • the buffer layer 202 on the water and oxygen barrier layer 201, the buffer layer 202 can be made of silicon nitride or silicon oxide material, play the role of buffering and protection; the active layer 203 provided on the buffer layer 202, The active layer can be made of polysilicon or amorphous silicon.
  • the active layer 203 includes a semiconductor region 2031 arranged in the middle and a doped region 2032 arranged at both ends of the semiconductor region 2031; covering the buffer layer and the semiconductor region 2031.
  • the first gate layer wiring 205 and the second gate layer wiring 207 can be made of metals or alloys containing molybdenum, copper, etc.; the first insulating layer 204, the second insulating layer 206 and the interlayer dielectric layer 208 can be made of silicon oxide, silicon nitride, and other materials.
  • An organic filling layer 30 is provided on the inorganic layer 20, and the material of the organic filling layer 30 can be a flexible organic material such as PI; an active drain metal layer trace is provided on the organic filling layer 40, the The source-drain metal layer traces include a first source-drain metal layer trace 401 located in the bending area 1a and a second source-drain metal layer trace 402 located in the non-bending area 1b, wherein The source-drain metal layer traces can be made of metals or alloys containing molybdenum, copper, etc.; the source-drain metal layer traces pass through the first insulating layer 204, the second insulating layer 206, and the layers.
  • the first via 901 of the interlayer dielectric layer 208 is connected to the doped layer 2032 of the active layer 203, and the organic filling layer 30 is located between the source and drain metal layer traces and the interlayer dielectric layer 208 between.
  • the first source and drain metal layer traces 401 Due to the brittle hardness of the metal molybdenum and copper, when the flexible display panel 1 is bent, the first source and drain metal layer traces 401 are more likely to be broken.
  • the line resistance of the first source-drain metal layer trace 401 increases to cause the brightness to decrease, so the first source-drain metal layer trace 401 located in the bending area 1a is designed as a curved trace.
  • the first source and drain metal layer traces 401 can be alternately received compressive stress and tensile stress, and the compressive stress and tensile stress can be neutralized, effectively reducing the risk of trace breakage; at the same time, it can reduce the cause
  • the optical change caused by the resistance change of the first source-drain metal layer trace 401 further improves the product performance.
  • the organic filling layer 30 corresponding to the bending area 1a is provided with at least one groove structure 301 on the side away from the base substrate 10, and the first source
  • the drain metal layer trace 401 forms a curved trace through the groove structure 301.
  • the groove structure 301 does not penetrate the organic filling layer 30, and the bottom of the groove structure 301 is in contact with the organic filling layer 30.
  • the The first source/drain metal layer trace 401 is located between the organic filling layer 30 and the flat layer 50, wherein the flat layer 50 is located on the source/drain metal layer trace.
  • the groove structure 301 penetrates the organic filling layer 30, and the first source-drain metal layer trace 401 is located between the layers. Between the dielectric layer 208, the organic filling layer 30 and the flat layer 50.
  • the groove structure 301 includes wave crests and wave troughs.
  • the first source-drain metal layer trace 401 is The groove structure 30 is subjected to tensile stress at the wave crest and compressive stress at the wave trough of the groove structure 301, so the tensile stress and the compressive stress at the two places can neutralize and offset each other.
  • the tensile stress and compressive stress of the first source and drain metal layer traces 401 between the crests and troughs can also neutralize and offset each other; when the flexible display panel 1 is folded outward (toward away from the When bending one side of the base substrate), the first source and drain metal layer traces 401 are subjected to compressive stress at the peak of the groove structure 301, and tensile stress at the trough of the groove structure 301 Therefore, the compressive stress and the tensile stress at the two locations can neutralize and offset each other, thereby reducing the stress on the first source-drain metal layer wiring 401 as a whole.
  • the groove structures 30 are evenly spaced in the direction perpendicular to the axis of the bending area 1a. Distribution;
  • the thickness of the organic filling layer 30 is 1.5um
  • the aperture of the groove structure 301 is 2um-20um
  • the depth of the groove structure 301 is 0.5um-1.5um
  • the thickness of the organic filling layer 30, the aperture of the groove structure 301, and the depth of the groove structure 301 can be specifically designed according to the actual situation of the flexible display panel 1.
  • the cross-sectional shape of the groove structure 301 includes trapezoid, rectangular, square, circular, diamond, or triangular shapes, or shapes such as special-shaped holes; for the cross-sectional shape of the groove structure 301, the embodiment of the present invention This is not limited.
  • the flexible display panel 1 further includes a second via 902 disposed in the bending area 1a, and the second via 902 penetrates the interlayer dielectric layer 208, the second insulating layer 206, The first insulating layer 204 and the buffer layer 202, the organic filling layer 30 is filled in the second via 902, can adjust the stress between the upper and lower film layers in the inorganic layer 20, and can The stress during bending of the inorganic layer 20 is dispersed to further prevent the first source and drain metal layer traces 401 from breaking.
  • the flexible display panel 1 further includes an anode layer 60 disposed on the flat layer 50, a pixel definition layer 70, and a spacer layer 80 disposed on the pixel definition layer 70, wherein the pixel definition
  • the opening area of the layer 70 is provided with a light-emitting layer.
  • an embodiment of the present invention provides a manufacturing method of a flexible display panel 1, including the following steps:
  • step S10 a base substrate 10 is provided.
  • the base substrate 10 is a flexible substrate.
  • Step S20 forming an inorganic layer 20 on the base substrate 10.
  • the step S20 includes the following steps:
  • Step S201 forming a water and oxygen barrier layer 201, a buffer layer 202, an active layer 203, a first insulating layer 204, a first gate layer wiring 205, a second insulating layer 206, and a second insulating layer 206 in sequence on the base substrate 10.
  • the water and oxygen barrier layer 201 and the buffer layer 202 can be formed by chemical vapor deposition, then the active layer 203 can be formed by crystallization, exposure, and etching by excimer laser annealing, and then the first insulating layer can be formed by chemical vapor deposition.
  • Layer 204 Afterwards, a first metal layer is formed by radio frequency sputtering, and exposed and etched to form a first gate layer wiring 205.
  • the second insulating layer 206 is formed by chemical vapor deposition; the second metal layer is grown by radio frequency sputtering, and exposed and etched to form the second gate layer wiring 207. Finally, a chemical vapor deposition method is used to form the interlayer dielectric layer 208.
  • Step S202 forming a second via 902 penetrating the first insulating layer 204, the second insulating layer 206, and the interlayer dielectric layer 208.
  • the first insulating layer 204, the second insulating layer 206, and the interlayer dielectric layer 208 are exposed and developed to form the second via hole 902.
  • step S30 an organic filling layer 30 is formed on the inorganic layer 20, and the organic filling layer 30 is patterned to make the area corresponding to the bending area 1a
  • the organic filling layer 30 forms at least one groove structure 301 on a side away from the base substrate 10.
  • the organic filling layer 30 may be formed on the interlayer dielectric layer 208 by coating, and the organic filling layer may be exposed by using a halftone mask 2.
  • the halftone mask 2 includes a light-transmitting area 100, The semi-transmissive area 200 and the non-transmissive area 300, wherein the transparent area 100 corresponds to the area where the flexible display panel 1 needs to form the first via 901, and the semi-transmissive area 200 corresponds to the flexible display panel 1 needs to form a recess.
  • the non-transmissive area 300 corresponds to the remaining area of the flexible display panel 1.
  • the halftone mask 2 can be used to prepare the first via 901 and the groove structure 301 at the same time, which can save manufacturing process and improve production efficiency; of course, another mask with a different structure can also be used to prepare the first via 901 in succession. And the groove structure 301 will not be described in detail here.
  • the thickness of the organic filling layer 30 is 1.5um
  • the aperture of the groove structure 301 is 2um ⁇ 20um
  • the depth of the groove structure 301 is 0.5um ⁇ 1.5um
  • the groove structure 301 penetrates Or it does not penetrate the organic filling layer 30
  • the cross-sectional shape of the groove structure 301 includes shapes such as trapezoid, rectangle, square, circle, rhombus and triangle, or shapes such as special-shaped holes.
  • step S40 forming a source and drain metal layer on the organic filling layer 30, and patterning the source and drain metal layer to form a first source and drain in the bending area 1a
  • the metal layer trace 401 forms a second source-drain metal layer trace 402 in the non-bending area 1b, wherein the first source-drain metal layer trace 401 forms a curved shape through the groove structure 301 Traces.
  • the source and drain metal layer traces can be formed by sputtering.
  • the organic filling layer 30 is patterned, including exposure, development, and etching, etc., and the first insulating layer 204 and the second insulating layer 206 may also be formed to penetrate through the first insulating layer 204 and the second insulating layer 206. And the first via 901 of the interlayer dielectric layer 208, and the first via 901 is connected to the active layer 203.
  • step S50 forming a flat layer 50 on the traces of the source and drain metal layers.
  • the manufacturing method of the flexible display panel 1 further includes forming an anode layer 60, a pixel defining layer 70, and a spacer layer 80 on the flat layer 50, and the anode layer 60 is wired with the source and drain metal layers. Connect through vias.
  • the flexible display panel 1 and the manufacturing method thereof provided by the embodiments of the present invention design the source and drain metal layer traces to be curved, so that when the flexible display panel 1 is bent, the source and drain metal Layer traces are alternately subjected to compressive stress and tensile stress, and the compressive stress and tensile stress can be neutralized and offset to reduce the stress, thereby reducing the resistance change of the source and drain metal layer traces caused by bending, thereby reducing Optical changes caused by resistance changes; at the same time, it can reduce the risk of breakage of the source and drain metal layer traces, and improve the product performance of the flexible display panel 1.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

一种柔性显示面板（1）及其制作方法，柔性显示面板（1）包括衬底基板（10）、无机层（20）、有机填充层（30）、源漏极金属层走线以及平坦层（50），源漏极金属层走线包括位于弯折区（1a）的第一源漏极金属层走线（401）和位于非弯折区（1b）的第二源漏极金属层走线（402），第一源漏极金属层走线（401）为弯曲状走线，可减小弯折带来的源漏极金属层走线的电阻变化，且能降低断裂风险。

Description

柔性显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种柔性显示面板及其制作方法。
 背景技术
近年来，有机发光二极管（organic light-emitting diode ，OLED）显示屏以其高对比度、广视角、可实现弯折等优势受到了广泛的关注和应用，尤其是其具有的弯折特性吸引了广大消费者的眼球，随着技术方面越来越成熟，柔性可折叠显示屏也逐渐出现在各个展台。
柔性折叠显示屏在使用过程中需要卷起或者弯曲，甚至频繁弯折，随着弯折次数的不断增加，容易引起源漏极金属层走线的线电阻变大，从而导致显示屏亮度降低以及源漏极金属层走线发生断裂等问题，引起显示不良。
综上所述，需要提供一种新的柔性显示面板及其制作方法，来解决上述技术问题。
 技术问题
本发明提供的柔性显示面板及其制作方法，解决了现有的柔性显示面板随着弯折次数的不断增加，容易引起源漏极金属层走线的线电阻增大，导致亮度降低以及源漏极金属层走线发生断裂的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供一种柔性显示面板，包括弯折区和非弯折区，所述柔性显示面板包括：
衬底基板；
无机层，设置于所述衬底基板上；
有机填充层，设置于所述无机层上，所述有机填充层采用聚酰亚胺；
源漏极金属层走线，设置于所述有机填充层上，所述源漏极金属层走线包括位于所述弯折区的第一源漏极金属层走线和位于所述非弯折区的第二源漏极金属层走线，所述第一源漏极金属层走线为弯曲状走线；以及
平坦层，设置于所述源漏极金属层走线远离所述衬底基板的一侧。
根据本发明实施例提供的柔性显示面板，所述无机层包括：
水氧阻隔层，设置于所述衬底基板上；
缓冲层，设置于所述水氧阻隔层上；
有源层，设置于所述缓冲层上；
第一绝缘层，覆盖所述缓冲层和所述有源层；
第一栅极层走线，设置于所述第一绝缘层上；
第二绝缘层，覆盖所述第一绝缘层和所述第一栅极层走线；
第二栅极层走线，设置于所述第二绝缘层上；以及
层间介质层，覆盖所述第二绝缘层和所述第二栅极层走线；
其中，所述源漏极层走线设置于所述有机填充层上，所述源漏极金属层走线通过贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第一过孔与所述有源层连接，所述有机填充层位于所述源漏极金属层走线和所述层间介质层之间。
根据本发明实施例提供的柔性显示面板，对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧设置有至少一凹槽结构，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的底部与所述有机填充层相接触，所述第一源漏极金属层走线位于所述有机填充层和所述平坦层之间。
根据本发明实施例提供的柔性显示面板，所述凹槽结构贯穿所述有机填充层，所述第一源漏极金属层走线位于所述层间介质层、所述有机填充层以及所述平坦层之间。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的孔径为2um~20um。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的截面形状包括梯形、长方形、正方形、圆形、菱形或三角形。
根据本发明实施例提供的柔性显示面板，所述柔性显示面板还包括设置于所述弯折区的第二过孔，所述第二过孔贯穿所述层间介质层、所述第二绝缘层、所述第一绝缘层以及所述缓冲层，所述有机填充层填充于所述第二过孔。
本发明实施例提供一种柔性显示面板，包括弯折区和非弯折区，所述柔性显示面板包括：
衬底基板；
无机层，设置于所述衬底基板上；
有机填充层，设置于所述无机层上；
源漏极金属层走线，设置于所述有机填充层上，所述源漏极金属层走线包括位于所述弯折区的第一源漏极金属层走线和位于所述非弯折区的第二源漏极金属层走线，所述第一源漏极金属层走线为弯曲状走线；以及
平坦层，设置于所述源漏极金属层走线远离所述衬底基板的一侧。
根据本发明实施例提供的柔性显示面板，所述无机层包括：
水氧阻隔层，设置于所述衬底基板上；
缓冲层，设置于所述水氧阻隔层上；
有源层，设置于所述缓冲层上；
第一绝缘层，覆盖所述缓冲层和所述有源层；
第一栅极层走线，设置于所述第一绝缘层上；
第二绝缘层，覆盖所述第一绝缘层和所述第一栅极层走线；
第二栅极层走线，设置于所述第二绝缘层上；以及
层间介质层，覆盖所述第二绝缘层和所述第二栅极层走线；
其中，所述源漏极层走线设置于所述有机填充层上，所述源漏极金属层走线通过贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第一过孔与所述有源层连接，所述有机填充层位于所述源漏极金属层走线和所述层间介质层之间。
根据本发明实施例提供的柔性显示面板，对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧设置有至少一凹槽结构，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的底部与所述有机填充层相接触，所述第一源漏极金属层走线位于所述有机填充层和所述平坦层之间。
根据本发明实施例提供的柔性显示面板，所述凹槽结构贯穿所述有机填充层，所述第一源漏极金属层走线位于所述层间介质层、所述有机填充层以及所述平坦层之间。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的孔径为2um~20um。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的深度为0.5um~1.5um。
根据本发明实施例提供的柔性显示面板，所述凹槽结构的截面形状包括梯形、长方形、正方形、圆形、菱形或三角形。
根据本发明实施例提供的柔性显示面板，所述柔性显示面板还包括设置于所述弯折区的第二过孔，所述第二过孔贯穿所述层间介质层、所述第二绝缘层、所述第一绝缘层以及所述缓冲层，所述有机填充层填充于所述第二过孔。
根据本发明实施例提供的柔性显示面板，所述缓冲层采用氮化硅或氧化硅材料制成。
本发明实施例提供一种柔性显示面板的制作方法，包括以下步骤：
S10：提供衬底基板；
S20：在所述衬底基板上形成无机层；
S30：在所述无机层上形成有机填充层，并对所述有机填充层进行图案化处理，以使对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧形成至少一凹槽结构；
S40:在所述有机填充层上形成源漏极金属层，并对所述源漏极金属层进行图案化处理，以在所述弯折区形成第一源漏极金属层走线，在所述非弯折区形成第二源漏极金属层走线，其中，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线；以及
S50：在所述源漏极金属层走线上形成平坦层。
根据本发明实施例提供的柔性显示面板的制作方法，所述步骤S20包括以下步骤：
S201：在所述衬底基板上依次形成水氧阻隔层、缓冲层、有源层、第一绝缘层、第一栅极层走线、第二绝缘层、第二栅极层走线以及层间介质层；以及
S202：形成贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第二过孔。
 有益效果
本发明的有益效果为：本发明提供的柔性显示面板及其制作方法，通过将源漏极金属层走线设计成弯曲状走线，使得柔性显示面板在进行弯折时，源漏极金属层走线交替受到压应力和张应力，并可实现压应力和张应力的中和抵消，降低应力，从而可减小弯折所带来的源漏极金属层走线的电阻变化，进而降低因电阻变化而导致的光学变化；同时能够降低源漏极金属层走线发生断裂的风险，提升了柔性显示面板的产品性能。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种柔性显示面板的平面结构示意图；
图2为本发明实施例提供的一种柔性显示面板沿A-A的剖面结构示意图；
图3为本发明实施例提供的一种柔性显示面板沿B-B的剖面结构示意图；
图4为本发明实施例提供的另一种柔性显示面板沿B-B的剖面结构示意图；
图5为本发明实施例提供的一种柔性显示面板的制作方法的流程图；
图6A~图6G为本发明实施例提供的一种柔性显示面板的制作方法的流程结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有技术的柔性显示面板，随着弯折次数的不断增加，容易引起源漏极金属层走线的线电阻增大，导致亮度降低以及源漏极金属层走线发生断裂，本实施例能够解决该缺陷。
如图1所示，本发明实施例提供的柔性显示面板1，包括显示区，集成芯片和柔性电路板位于所述显示区的边缘位置；所述显示区包括弯折区1a和非弯折区1b，所述弯折区1a是指需要弯折或折叠的区域，所述非弯折区1b是指不需要弯折或折叠的区域，所述弯折区1a和所述非弯折区1b均可用于显示画面；其中，所述弯折区1a可位于所述显示区的任意位置，考虑到用户习惯，在本发明实施例中，所述弯折区1a位于所述显示区的中部，所述柔性显示面板1可沿所述弯折区1a的弯折轴线进行弯折或折叠操作。
如图2、图3所示，从结构上说，所述柔性显示面板1包括一阵列基板，所述阵列基板进一步包括衬底基板10，所述衬底基板10为柔性基板，可采用聚酰亚胺（Polyamide，PI）材料。
在所述衬底基板10上设置有无机层20，需要说明的是，所述无机层20包括但不限于依次层叠设置于所述衬底基板10上的水氧阻隔层201、缓冲层202、有源层203、第一绝缘层204、第一栅极层走线205、第二绝缘层206、第二栅极层走线207以及层间介质层208，在本发明实施例中，所述无机层20包括：设置于所述衬底基板10上的水氧阻隔层201，所述水氧阻隔层201用于防止外部水分或氧气侵蚀所述柔性显示面板1的器件层；设置于所述水氧阻隔层201上的缓冲层202，所述缓冲层202可以采用氮化硅或氧化硅材料制成，起到缓冲和保护的作用；设置于所述缓冲层202上的有源层203，所述有源层可以采用多晶硅或非晶硅材料，在所述有源层203包括设置于中部的半导体区2031、以及设置于半导体区2031两端的掺杂区2032；覆盖所述缓冲层和所述有源层203的第一绝缘层204；设置于所述第一绝缘层204上的第一栅极层走线205；覆盖所述第一绝缘层204和所述第一栅极层走线205的第二绝缘层206；设置于所述第二绝缘层206上的第二栅极层走线207；覆盖所述第二绝缘层206和所述第二栅极层走线207的层间介质层208。
具体地，所述第一栅极层走线205、所述第二栅极层走线207可以采用含有钼、铜等的金属或合金；所述第一绝缘层204、所述第二绝缘层206以及所述层间介质层208可以采用氧化硅、氮化硅等材料。
在所述无机层20上设置有有机填充层30，所述有机填充层30的材料可以采用PI等柔性有机材料；在所述有机填充层40上设置有源漏极金属层走线，所述源漏极金属层走线包括位于所述弯折区1a的第一源漏极金属层走线401和位于所述非弯折区1b的第二源漏极金属层走线402，其中，所述源漏极金属层走线可以采用含有钼、铜等的金属或合金；所述源漏极金属层走线通过贯穿所述第一绝缘层204、所述第二绝缘层206以及所述层间介质层208的第一过孔901与所述有源层203的所述掺杂层2032连接，所述有机填充层30位于所述源漏极金属层走线和所述层间介质层208之间。
由于金属钼、铜硬度较脆，当所述柔性显示面板1进行弯折时，所述第一源漏极金属层走线401更加容易发生断裂，同时随着弯折次数的不断增加，容易导致第一源漏极金属层走线401的线电阻增大而引起亮度减小，故将位于所述弯折区1a的所述第一源漏极金属层走线401设计成弯曲状走线，可使得所述第一源漏极金属层走线401交替收到压应力和张应力，并可实现压应力和张应力的中和，有效减小走线发生断裂的风险；同时能够降低因所述第一源漏极金属层走线401的电阻变化而导致的光学变化，进而提升产品性能。
进一步地，在本发明实施例中，对应于所述弯折区1a的所述有机填充层30在远离所述衬底基板10的一侧设置有至少一凹槽结构301，所述第一源漏极金属层走线401通过所述凹槽结构301形成弯曲状走线。
在一种实施方式中，如图3所示，所述凹槽结构301未贯穿所述有机填充层30，所述凹槽结构301的底部与所述有机填充层30相接触，此时所述第一源漏极金属层走线401位于所述有机填充层30和所述平坦层50之间，其中，所述平坦层50位于所述源漏极金属层走线上。
优选地，在另一种实施方式中，如图4所示，所述凹槽结构301贯穿所述有机填充层30，此时所述第一源漏极金属层走线401位于所述层间介质层208、所述有机填充层30以及所述平坦层50之间。
所述凹槽结构301包括波峰和波谷，当所述柔性显示面板1进行内折（向靠近所述衬底基板一侧进行弯折）时，所述第一源漏极金属层走线401在所述凹槽结构30的波峰处受到拉应力，在所述凹槽结构301的波谷处受到压应力，故两处的拉应力和压应力可以相互中和抵消。同理，所述第一源漏极金属层走线401在波峰和波谷之间受到的拉应力和压应力也可相互中和抵消；当所述柔性显示面板1进行外折（向远离所述衬底基板一侧进行弯折）时，所述第一源漏极金属层走线401在所述凹槽结构301的波峰处受到压应力，在所述凹槽结构301的波谷处受到拉应力，故两处的压应力和拉应力可以相互中和抵消，从而从整体上降低了所述第一源漏极金属层走线401受到的应力大小。
具体地，由于所述柔性显示面板1在进行弯折时，所述弯折区1a的各个位置受到均匀应力，故所述凹槽结构30在垂直于所述弯折区1a轴线方向上均匀间隔分布；在本发明实施例中，所述有机填充层30的厚度为1.5um，所述凹槽结构301的孔径为2um~20um，所述凹槽结构301的深度为0.5um~1.5um；需要说明的是，所述有机填充层30的厚度、所述凹槽结构301的孔径以及所述凹槽结构301的深度可以根据所述柔性显示面板1的实际情况进行具体设计。
具体地，所述凹槽结构301的截面形状包括梯形、长方形、正方形、圆形、菱形或三角形等形状，或者异形孔等形状；对于所述凹槽结构301的截面形状，本发明实施例对此不作限制。
进一步地，所述柔性显示面板1还包括设置于所述弯折区1a的第二过孔902，所述第二过孔902贯穿所述层间介质层208、所述第二绝缘层206、所述第一绝缘层204以及所述缓冲层202，所述有机填充层30填充于所述第二过孔902，可以调节所述无机层20中的上下膜层之间的应力，能够对所述无机层20在弯折时的应力进行分散，进一步防止所述第一源漏极金属层走线401发生断裂。
所述柔性显示面板1还包括设置于所述平坦层50上的阳极层60、像素定义层70、以及设置于所述像素定义层70上的隔垫物层80，其中，在所述像素定义层70的开口区设置有发光层。
如图5所示，本发明实施例提供一种柔性显示面板1的制作方法，包括以下步骤：
请参阅图6A，步骤S10：提供衬底基板10。
所述衬底基板10为柔性基板。
步骤S20：在所述衬底基板10上形成无机层20。
参阅图6B，所述步骤S20包括以下步骤：
步骤S201：在所述衬底基板10上依次形成水氧阻隔层201、缓冲层202、有源层203、第一绝缘层204、第一栅极层走线205、第二绝缘层206、第二栅极层走线207以及层间介质层208。
首先，可以采用化学气相沉积法形成水氧阻隔层201和缓冲层202，接着通过准分子激光退火法进行晶化、曝光、刻蚀形成有源层203，之后用化学气相沉积法形成第一绝缘层204；之后采用射频溅射的方法形成第一金属层，并进行曝光刻蚀，形成第一栅极层走线205。之后，再用化学气相沉积法形成第二绝缘层206；再用射频溅射生长第二金属层，并进行曝光刻蚀，形成第二栅极层走线207。最后，采用化学气相沉积法形成层间介质层208。
步骤S202：形成贯穿所述第一绝缘层204、所述第二绝缘层206以及所述层间介质层208的第二过孔902。
对所述第一绝缘层204、所述第二绝缘层206以及所述层间介质层208进行曝光显影，形成所述第二过孔902。
参阅图6C、图6D和图6E，步骤S30：在所述无机层20上形成有机填充层30，并对所述有机填充层30进行图案化处理，以使对应于所述弯折区1a的所述有机填充层30在远离所述衬底基板10的一侧形成至少一凹槽结构301。
可以采用涂布的方式在所述层间介质层208上形成有机填充层30，采用半色调掩膜板2对有机填充层进行曝光处理，所述半色调掩膜板2包括透光区100、半透光区200以及非透光区300，其中，所述透光区100对应柔性显示面板1需形成第一过孔901的区域，所述半透光区200对应柔性显示面板1需形成凹槽结构301的区域，所述非透光区300对应所述柔性显示面板1的其余区域。
采用该半色调掩膜板2可以同时制备第一过孔901和凹槽结构301，能够节省制程、提高生产效率；当然，也可采用另一结构不同的掩膜板先后制备第一过孔901和凹槽结构301，在此不再详述。
具体地，所述有机填充层30的厚度为1.5um，所述凹槽结构301的孔径为2um~20um，所述凹槽结构301的深度为0.5um~1.5um，所述凹槽结构301贯穿或者不贯穿所述有机填充层30；所述凹槽结构301的截面形状包括梯形、长方形、正方形、圆形、菱形以及三角形等形状，或者异形孔等形状。
参阅图6F，步骤S40:在所述有机填充层30上形成源漏极金属层，并对所述源漏极金属层进行图案化处理，以在所述弯折区1a形成第一源漏极金属层走线401，在所述非弯折区1b形成第二源漏极金属层走线402，其中，所述第一源漏极金属层走线401通过所述凹槽结构301形成弯曲状走线。
可以采用溅射的方式形成所述源漏极金属层走线。
需要说明的是，所述步骤S40中，对所述有机填充层30进行图案化处理，包括曝光显影刻蚀等处理，还可以形成贯穿所述第一绝缘层204、所述第二绝缘层206以及所述层间介质层208的第一过孔901，所述第一过孔901与所述有源层203连接。
参阅图6G，步骤S50：在所述源漏极金属层走线上形成平坦层50。
同时，所述柔性显示面板1的制作方法还包括，在平坦层50上形成阳极层60、像素定义层70以及隔垫物层80，所述阳极层60与所述源漏极金属层走线通过过孔连接。
有益效果为：本发明实施例提供的柔性显示面板1及其制作方法，通过将源漏极金属层走线设计成弯曲状走线，使得柔性显示面板1在进行弯折时，源漏极金属层走线交替受到压应力和张应力，并可实现压应力和张应力的中和抵消，降低应力，从而可减小弯折所带来的源漏极金属层走线的电阻变化，进而降低因电阻变化而导致的光学变化；同时能够降低源漏极金属层走线发生断裂的风险，提升了柔性显示面板1的产品性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种柔性显示面板，包括弯折区和非弯折区，所述柔性显示面板包括：
    衬底基板；
    无机层，设置于所述衬底基板上；
    有机填充层，设置于所述无机层上，所述有机填充层采用聚酰亚胺；
    源漏极金属层走线，设置于所述有机填充层上，所述源漏极金属层走线包括位于所述弯折区的第一源漏极金属层走线和位于所述非弯折区的第二源漏极金属层走线，所述第一源漏极金属层走线为弯曲状走线；以及
    平坦层，设置于所述源漏极金属层走线远离所述衬底基板的一侧。
  2. 根据权利要求1所述的柔性显示面板，其中所述无机层包括：
    水氧阻隔层，设置于所述衬底基板上；
    缓冲层，设置于所述水氧阻隔层上；
    有源层，设置于所述缓冲层上；
    第一绝缘层，覆盖所述缓冲层和所述有源层；
    第一栅极层走线，设置于所述第一绝缘层上；
    第二绝缘层，覆盖所述第一绝缘层和所述第一栅极层走线；
    第二栅极层走线，设置于所述第二绝缘层上；以及
    层间介质层，覆盖所述第二绝缘层和所述第二栅极层走线；
    其中，所述源漏极层走线设置于所述有机填充层上，所述源漏极金属层走线通过贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第一过孔与所述有源层连接，所述有机填充层位于所述源漏极金属层走线和所述层间介质层之间。
  3. 根据权利要求2所述的柔性显示面板，其中对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧设置有至少一凹槽结构，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线。
  4. 根据权利要求3所述的柔性显示面板，其中所述凹槽结构的底部与所述有机填充层相接触，所述第一源漏极金属层走线位于所述有机填充层和所述平坦层之间。
  5. 根据权利要求3所述的柔性显示面板，其中所述凹槽结构贯穿所述有机填充层，所述第一源漏极金属层走线位于所述层间介质层、所述有机填充层以及所述平坦层之间。
  6. 根据权利要求3所述的柔性显示面板，其中所述凹槽结构的孔径为2um~20um。
  7. 根据权利要求3所述的柔性显示面板，其中所述凹槽结构的截面形状包括梯形、长方形、正方形、圆形、菱形或三角形。
  8. 根据权利要求2所述的柔性显示面板，其中所述柔性显示面板还包括设置于所述弯折区的第二过孔，所述第二过孔贯穿所述层间介质层、所述第二绝缘层、所述第一绝缘层以及所述缓冲层，所述有机填充层填充于所述第二过孔。
  9. 一种柔性显示面板，包括弯折区和非弯折区，所述柔性显示面板包括：
    衬底基板；
    无机层，设置于所述衬底基板上；
    有机填充层，设置于所述无机层上；
    源漏极金属层走线，设置于所述有机填充层上，所述源漏极金属层走线包括位于所述弯折区的第一源漏极金属层走线和位于所述非弯折区的第二源漏极金属层走线，所述第一源漏极金属层走线为弯曲状走线；以及
    平坦层，设置于所述源漏极金属层走线远离所述衬底基板的一侧。
  10. 根据权利要求9所述的柔性显示面板，其中所述无机层包括：
    水氧阻隔层，设置于所述衬底基板上；
    缓冲层，设置于所述水氧阻隔层上；
    有源层，设置于所述缓冲层上；
    第一绝缘层，覆盖所述缓冲层和所述有源层；
    第一栅极层走线，设置于所述第一绝缘层上；
    第二绝缘层，覆盖所述第一绝缘层和所述第一栅极层走线；
    第二栅极层走线，设置于所述第二绝缘层上；以及
    层间介质层，覆盖所述第二绝缘层和所述第二栅极层走线；
    其中，所述源漏极层走线设置于所述有机填充层上，所述源漏极金属层走线通过贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第一过孔与所述有源层连接，所述有机填充层位于所述源漏极金属层走线和所述层间介质层之间。
  11. 根据权利要求10所述的柔性显示面板，其中对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧设置有至少一凹槽结构，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线。
  12. 根据权利要求11所述的柔性显示面板，其中所述凹槽结构的底部与所述有机填充层相接触，所述第一源漏极金属层走线位于所述有机填充层和所述平坦层之间。
  13. 根据权利要求11所述的柔性显示面板，其中所述凹槽结构贯穿所述有机填充层，所述第一源漏极金属层走线位于所述层间介质层、所述有机填充层以及所述平坦层之间。
  14. 根据权利要求11所述的柔性显示面板，其中所述凹槽结构的孔径为2um~20um。
  15. 根据权利要求11所述的柔性显示面板，其中所述凹槽结构的深度为0.5um~1.5um。
  16. 根据权利要求11所述的柔性显示面板，其中所述凹槽结构的截面形状包括梯形、长方形、正方形、圆形、菱形或三角形。
  17. 根据权利要求10所述的柔性显示面板，其中所述柔性显示面板还包括设置于所述弯折区的第二过孔，所述第二过孔贯穿所述层间介质层、所述第二绝缘层、所述第一绝缘层以及所述缓冲层，所述有机填充层填充于所述第二过孔。
  18. 根据权利要求10所述的柔性显示面板，其中所述缓冲层采用氮化硅或氧化硅材料制成。
  19. 一种柔性显示面板的制作方法，包括以下步骤：
    S10：提供衬底基板；
    S20：在所述衬底基板上形成无机层；
    S30：在所述无机层上形成有机填充层，并对所述有机填充层进行图案化处理，以使对应于所述弯折区的所述有机填充层在远离所述衬底基板的一侧形成至少一凹槽结构；
    S40:在所述有机填充层上形成源漏极金属层，并对所述源漏极金属层进行图案化处理，以在所述弯折区形成第一源漏极金属层走线，在所述非弯折区形成第二源漏极金属层走线，其中，所述第一源漏极金属层走线通过所述凹槽结构形成弯曲状走线；以及
    S50：在所述源漏极金属层走线上形成平坦层。
  20. 根据权利要求19所述的柔性显示面板的制作方法，其中所述步骤S20包括以下步骤：
    S201：在所述衬底基板上依次形成水氧阻隔层、缓冲层、有源层、第一绝缘层、第一栅极层走线、第二绝缘层、第二栅极层走线以及层间介质层；以及
    S202：形成贯穿所述第一绝缘层、所述第二绝缘层以及所述层间介质层的第二过孔。
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