CN107230690A - 显示装置及显示装置的制造方法 - Google Patents

显示装置及显示装置的制造方法 Download PDF

Info

Publication number
CN107230690A
CN107230690A CN201710069669.XA CN201710069669A CN107230690A CN 107230690 A CN107230690 A CN 107230690A CN 201710069669 A CN201710069669 A CN 201710069669A CN 107230690 A CN107230690 A CN 107230690A
Authority
CN
China
Prior art keywords
film transistor
layer
tft
thin film
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710069669.XA
Other languages
English (en)
Other versions
CN107230690B (zh
Inventor
丸山哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Japan Display Inc
Original Assignee
Japan Display Central Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Central Inc filed Critical Japan Display Central Inc
Priority to CN202010911791.9A priority Critical patent/CN112038376A/zh
Publication of CN107230690A publication Critical patent/CN107230690A/zh
Application granted granted Critical
Publication of CN107230690B publication Critical patent/CN107230690B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明提供一种显示装置及显示装置的制造方法，其目的在于减小薄膜晶体管的电流偏差，提高驱动能力。设于周边区域(PR)的多个薄膜晶体管为交错型的第一薄膜晶体管(TFT1)，其具有由低温多晶硅构成的第一沟道层(CH1)，且在第一源电极(SE1)及第一漏电极(DE1)各自与第一栅电极(GE1)之间不存在第一沟道层。设于显示区域(DR)的多个薄膜晶体管包括交错型的第二薄膜晶体管(TFT2)，其具有由氧化物半导体构成的第二沟道层(CH2)，且在第二源电极(SE2)及第二漏电极(DE2)各自与第二栅电极(GE2)之间不存在第二沟道层。第一薄膜晶体管与第二薄膜晶体管相比位于更下层的位置。

Description

显示装置及显示装置的制造方法
技术领域
本发明涉及一种显示装置及显示装置的制造方法。
背景技术
显示装置通过与每个像素对应的亮度和色度的发光来显示图像。例如，向设在配置成矩阵状的多个像素电极与这些像素电极所共用的共用电极之间的有机发光层流通电流使其发光。另外，针对各个像素布局有组合了多个薄膜晶体管、电容器的像素电路。
现有技术文献
专利文献1：日本特开2012-160679号公报
因为由低温多晶硅构成的薄膜晶体管的驱动能力高，所以被大量使用。硅通过受激准分子激光退火而被多结晶化，但激光的照射偏差很大，从而无法减小各像素的电流偏差。因此，需要设置修正电路、或者多次反复照射激光，从而存在装置成本、激光的材料成本等的课题。
近年来，作为薄膜晶体管工艺，开发出使用了氧化物半导体的制造工艺(专利文献1)。然而，使用了氧化物半导体的现有薄膜晶体管无法满足窄框、低耗电量等的制约条件。于是，期待开发出用于混载基于氧化物半导体的薄膜晶体管和基于低温多晶硅的薄膜晶体管的工艺。
发明内容
本发明的目的在于，减小薄膜晶体管的电流偏差，提高驱动能力。
本发明的显示装置的特征在于，具有：多个像素电极，其设于用于显示图像的显示区域；共用电极，其配置在所述多个像素电极的上方；发光元件层，其夹设在所述多个像素电极与所述共用电极之间；以及由多个层构成的电路层，所述多个层从所述显示区域到达位于所述显示区域的外侧的周边区域，所述电路层在所述显示区域及所述周边区域分别具有多个薄膜晶体管，设于所述周边区域的所述多个薄膜晶体管为交错型的第一薄膜晶体管，该第一薄膜晶体管具有由低温多晶硅构成的第一沟道层，且在第一源电极与第一栅电极之间及第一漏电极与第一栅电极之间不存在所述第一沟道层，设于所述显示区域的所述多个薄膜晶体管包括交错型的第二薄膜晶体管，该第二薄膜晶体管具有由氧化物半导体构成的第二沟道层，且在第二源电极与第二栅电极之间及第二漏电极与第二栅电极之间不存在所述第二沟道层，所述第二薄膜晶体管与所述第一薄膜晶体管相比位于更上层的位置。
根据本发明，第一薄膜晶体管及第二薄膜晶体管为交错型，因此寄生电容变小，驱动能力很高。另外，由于第二薄膜晶体管的第二沟道层由氧化物半导体构成，所以能够减小电流偏差。而且，第一薄膜晶体管与第二薄膜晶体管相比位于更下层的位置。因此，由于第二薄膜晶体管在第一薄膜晶体管之后形成，所以不会受到在形成由低温多晶硅构成的第一沟道层时的热量。
本发明的显示装置的制造方法中，显示装置具有用于显示图像的显示区域及位于所述显示区域的外侧的周边区域，该显示装置的制造方法的的特征在于，包括：在所述周边区域形成交错型的第一薄膜晶体管的工序，所述第一薄膜晶体管具有由低温多晶硅构成的第一沟道层，且在第一源电极与第一栅电极之间及第一漏电极与第一栅电极之间不存在所述第一沟道层；在形成所述第一薄膜晶体管之后，在所述显示区域形成交错型的第二薄膜晶体管的工序，该第二薄膜晶体管具有由氧化物半导体构成的第二沟道层，且在第二源电极与第二栅电极之间及第二漏电极与第二栅电极之间不存在所述第二沟道层；在形成所述第二薄膜晶体管之后，在所述显示区域形成多个像素电极的工序；在所述多个像素电极的上方形成发光元件层的工序；以及在所述发光元件层的上方形成共用电极。
根据本发明，第一薄膜晶体管及第二薄膜晶体管为交错型，因此寄生电容变小，驱动能力很高。另外，由于第二薄膜晶体管的第二沟道层由氧化物半导体构成，所以能够减小电流偏差。而且，由于第二薄膜晶体管在第一薄膜晶体管之后形成，所以不会受到在形成由低温多晶硅构成的第一沟道层时的热量。
附图说明
图1是本发明的第一实施方式的显示装置的立体图。
图2是图1示出的显示装置的II-II线剖视图。
图3是本发明的第一实施方式的显示装置的电路图。
图4是示出第一实施方式的电路层的详细的概略图。
图5是示出第一实施方式的变形例的图。
图6是本发明的第二实施方式的显示装置的电路图。
图7是示出第二实施方式的电路层的详细的概略图。
附图标记说明
10 第一基板、12 集成电路芯片、14 柔性印刷基板、16 电路层、18 像素电极、20绝缘层、22 发光元件层、24 共用电极、26 封固层、28 填充层、30 第二基板、32 着色层、34黑矩阵、36屏蔽膜、116 电路层、140 金属层、142 贯穿孔、216 电路层、C 电容器、C1 第一电容器、C2 第二电容器、C3 第三电容器、CH1 第一沟道层、CH1 第一沟道层、CH2 第二沟道层、CL1 第一导电层、CL2 第二导电层、CP1 第一接触插塞、CP2 第二接触插塞、DE 显示元件、DE1 第一漏电极、DE2 第二漏电极、DR 显示区域、E1电极、E2 电极、E3 电极、GE1 第一栅电极、GE2 第二栅电极、PR 周边区域、PWL 电源线、SCL 扫描线、SE1 第一源电极、SE2第二源电极、SGL 信号线、SW1 第一开关元件、SW2 第二开关元件、SW3 第三开关元件、TFT1第一薄膜晶体管、TFT2 第二薄膜晶体管。
具体实施方式
以下，参照附图说明本发明的实施方式。
第一实施方式
图1是本发明的第一实施方式的显示装置的立体图。作为显示装置而举出有机电致发光显示装置为例子。显示装置对例如由红、绿及蓝构成的多个颜色的单位像素(子像素)进行组合，形成全彩的像素(pixel)，显示全彩的图像。显示装置通过例如由树脂构成而包括具有柔性的第一基板10。在第一基板10上搭载有用于驱动用于显示图像的元件的集成电路芯片12，并连接有用于与外部电连接的柔性印刷基板14。
图2是图1示出的显示装置的II-II线剖视图。在第一基板10上层叠有电路层16。在后面具体说明电路层16。在电路层16之上设置有以与多个单位像素分别对应的方式构成的多个像素电极18(例如阳极)。在电路层16及像素电极18上形成有绝缘层20。绝缘层20以载置在像素电极18的周缘部并使像素电极18的一部分(例如中央部)开口的方式形成。通过绝缘层20形成了包围像素电极18的一部分的凸块(bank)。
在像素电极18上设有发光元件层22。发光元件层22连续地载置在多个像素电极18上，也载置在绝缘层20上。作为变形例，也可以针对每个像素电极18分别(分离地)设置发光元件层22。发光元件层22至少包括发光层，而且可以包括电子输送层、空穴输送层、电子注入层及空穴注入层中的至少一层。
在发光元件层22之上，以在多个像素电极18的上方与发光元件层22接触的方式设有共用电极24(例如阴极)。共用电极24以载置在成为凸块的绝缘层20的上方的方式形成。发光元件层22夹设在像素电极18及共用电极24之间，通过流过两者之间的电流被控制亮度从而发光。发光元件层22通过由层叠于共用电极24的封固层26覆盖而被封固，从而隔绝了水分。在封固膜26的上方隔着填充层28设有第二基板30。在第二基板30上设有由多个颜色(例如，蓝、红及绿)构成的着色层32，在相邻的不同颜色的着色层32之间由金属或树脂等形成有黑矩阵34，构成了彩色滤光片。第二基板30可以是触摸面板，也可以具有偏振片、相位差板。
图3是本发明的第一实施方式的显示装置的电路图。显示装置具有用于显示图像的显示区域DR。在显示区域DR针对每个像素设置有显示元件DE。显示元件DE由图2示出的像素电极18及共用电极24以及夹设在它们之间的发光元件层22构成。显示元件DE利用从电源线PWL供给的电流来发光。发光根据向电容器C写入的影像信号来调整亮度。影像信号从信号线SGL供给，由第一开关元件SW1写入。第一开关元件SW1的控制通过从扫描线SCL输入的扫描信号来实现。第二开关元件SW2按照向电容器C写入的影像信号来控制从显示元件DE流过的电流。在显示区域DR的周围具有周边区域PR。在周边区域PR设置有生成扫描信号、影像信号等的驱动电路。
图4是示出第一实施方式的电路层16的详细的概略图。电路层16从显示区域DR到达位于显示区域DR的外侧的周边区域PR。在第一基板10上形成有针对其自身所含有的杂质的屏蔽膜36。
电路层16在周边区域PR包括多个薄膜晶体管。设置于周边区域PR的多个薄膜晶体管为具有由低温多晶硅构成的第一沟道层CH1的第一薄膜晶体管TFT1。在图3示出的周边区域PR形成的驱动电路包括第一薄膜晶体管TFT1。第一薄膜晶体管TFT1为交错(stagger)型。因此，由于在第一源电极SE1与第一栅电极GE1之间及第一漏电极DE1与第一栅电极GE1之间不存在第一沟道层CH1，所以寄生电容变得很小，驱动能力很高。第一沟道层CH1具有从与第一栅电极GE1的重叠部分溢出的部分，该部分因离子的注入从而电阻值变低。设置有第一接触插塞CP1，第一接触插塞CP1将电路层16的第一薄膜晶体管TFT1上方的绝缘层(多个层)贯穿，且与第一沟道层CH1(从与第一栅电极GE1的重叠部分溢出的部分)连接。
在显示区域DR设置有多个像素电极18。参照图2，如上所述，在像素电极18载置有绝缘层20。在图4中，省略了设在像素电极18之上的其他构件。电路层16在显示区域DR包括多个薄膜晶体管。设于显示区域DR的多个薄膜晶体管包括具有由氧化物半导体构成的第二沟道层CH2的第二薄膜晶体管TFT2。第二薄膜晶体管TFT2的第二沟道层CH2由于由氧化物半导体构成，所以能够减小电流偏差。另外，第二薄膜晶体管TFT2为交错型。因此，由于第二源电极SE2与第二栅电极GE2之间及第二漏电极DE2与第二栅电极GE2之间不存在第二沟道层CH2，所以寄生电容变小，驱动能力很高。第二沟道层CH2具有从与第二栅电极GE2的重叠部分溢出的部分，该部分因离子的注入从而电阻值变低。
第二薄膜晶体管TFT2与第一薄膜晶体管TFT1相比位于更上层的位置。因此，由于第二薄膜晶体管TFT2在第一薄膜晶体管TFT1之后形成，所以不会受到在形成由低温多晶硅构成的第一沟道层CH1时的热量的影响。
图3示出的第一开关元件SW1及第二开关元件SW2分别为图4示出的第二薄膜晶体管TFT2。成为第二开关元件SW2的第二薄膜晶体管TFT2以能够控制向多个像素电极18的每一个供给的电流的供给量的方式被连接。设置有第二接触插塞CP2，该第二接触插塞CP2将电路层16的第二薄膜晶体管TFT2上方的绝缘层贯穿，且与第二沟道层CH2(从与第二栅电极GE2的重叠部分溢出的部分)连接。
构成电路层16的多个层中在显示区域DR包括向低温多晶硅的层注入离子而形成的第一导电层CL1。第一导电层CL1位于与第一薄膜晶体管TFT1的第一沟道层CH1同一层，且与第二薄膜晶体管TFT2相比位于更下方的层。通过将第一导电层CL1设有与第二薄膜晶体管TFT2的整体重叠的大小，能够保护第二薄膜晶体管TFT2不受热量或静电影响。此外，在图4的例子中，以使第二接触插塞CP2从第二沟道层CH2的端部露出，而且到达第一导电层CL1的方式设置该第二接触插塞CP2。
构成电路层16的多个层中在显示区域DR还包括第二导电层CL2，将第一导电层CL1作为电容器C的一个电极，该第二导电层CL2在与第一导电层CL1相对的位置成为电容器C的另一个电极。第二导电层CL2位于与第一薄膜晶体管TFT1的第一栅电极GE1同一层，且与第二薄膜晶体管TFT2相比位于更下方的层。电容器C被设为与第二薄膜晶体管TFT2重叠，因此不要求平面上的空间。
在本实施方式的显示装置的制造方法中，在周边区域PR形成上述的第一薄膜晶体管TFT1。在该工序中，同时在显示区域DR通过形成低温多晶硅的层并注入离子来形成第一导电层CL1。第一导电层CL1可以形成为具有与第二薄膜晶体管TFT2的整体重叠的大小。另外，在该工序中，与第一栅电极GE1的形成同时地，还形成成为用于与第一导电层CL1一起构成电容器C的电极的第二导电层CL2。在形成第一薄膜晶体管TFT1之后，在显示区域DR形成上述第二薄膜晶体管TFT2。由于第二薄膜晶体管TFT2在第一薄膜晶体管TFT1之后形成，所以不会受到在形成由低温多晶硅构成的第一沟道层CH1时的热量的影响。在形成第二薄膜晶体管TFT2之后，在显示区域DR形成多个像素电极18。然后，如图2所示，在多个像素电极18上形成发光元件层22，在发光元件层22上形成共用电极24。
变形例
图5是示出第一实施方式的变形例的图。在该变形例中，设于显示区域DR的多个薄膜晶体管在周边区域PR的第一薄膜晶体管TFT1同一层的位置包括第一薄膜晶体管TFT1。也就是说，图3示出的第一开关元件SW1为第一薄膜晶体管TFT1。设有第一接触插塞CP1，该第一接触插塞CP1将电路层116的第一薄膜晶体管TFT1之上的绝缘层贯穿，且与第一沟道层CH1连接。。
构成电路层116的多个层包括金属层140，该金属层140以与第一薄膜晶体管TFT1的第一沟道层CH1的至少端部重叠的方式，在与第二薄膜晶体管TFT2的第二栅电极GE2同一层的位置由与第二栅电极GE2相同的材料构成。金属层140以与第一接触插塞CP1成为一体的方式形成。
如上所述，第二沟道层CH2具有从与第二栅电极GE2重叠的部分溢出的部分。该部分通过以第二栅电极GE2作为掩膜注入离子来降低电阻值。通过设置金属层140，能够防止因离子注入的工艺导致第一薄膜晶体管TFT1的特性下降。
在本变形例的显示装置的制造方法中，在周边区域PR形成第一薄膜晶体管TFT1的工序中，在显示区域DR还形成第一薄膜晶体管TFT1，这一点与上述实施方式不同。
在显示区域DR形成第二薄膜晶体管TFT2。在形成第二栅电极GE2之前，在位于第二栅电极GE2下方的绝缘层形成有到达第一沟道层CH1的上表面的贯穿孔142。与第二栅电极GE2的形成同时地，在贯穿孔142内形成第一接触插塞CP1，并且形成金属层140。金属层140以与第一接触插塞CP1一体化且与第一薄膜晶体管TFT1的第一沟道层CH1的至少端部重叠的方式形成。
第二实施方式
图6是本发明的第二实施方式的显示装置的电路图。在本实施方式中，通过第一开关元件SW1将影像信号写入至电容器C，通过第二开关元件SW2来控制流过显示元件DE的电流，通过第三开关元件SW3来开启/关断电流供给。
图7是示出第二实施方式的电路层216的详细的概略图。在本实施方式中，图6示出的电容器C由串联连接的多个电容器(第一电容器C1、第二电容器C2及第三电容器C3)构成。
第一电容器C1包括向低温多晶硅的层注入离子而形成的一对电极E1。一对电极E1在与形成在周边区域PR的第一薄膜晶体管TFT1(图4参照)的第一沟道层CH1及第一栅电极GE1同一层以与第一栅电极GE1相同的材料构成。
第二电容器C2的一对电极E2由如下的电极构成：由作为第二开关元件SW2的第二薄膜晶体管TFT2的第二沟道层CH2的一部分(从与第二栅电极GE2的重叠部分溢出且被降低电阻的部分)构成的电极；以及在其上方形成的电极(在与第二栅电极GE2同一层由相同材料形成)。
第三电容器C3的一对电极E3由第二电容器C2的一个电极E2和在其上方形成的电极构成。第二电容器C2和第三电容器C3通过共用一个电极而串联连接。在第二电容器C2或第三电容器C3的未共用的另一个电极通过接触插塞CP而连接有第一电容器C1的一个电极E1。其他详细与在第一实施方式中说明的内容对应。在本实施方式的显示装置的制造方法中，在周边区域PR形成第一薄膜晶体管TFT1(参照图4)时，同时形成第三电容器C3的一对电极E3。另外，在形成第二薄膜晶体管TFT2时，形成第二电容器C2的一对电极E2(第三电容器C3的一个电极E3)。此后，形成第三电容器C3的另一个电极E3。
此外，显示装置不限于有机电致发光显示装置，也可以为在各像素具备量子点发光元件(QLED:Quantum‐Dot Light Emitting Diode)这种发光元件的显示装置，还可以为液晶显示装置。
本发明并非限定于上述实施方式，能够进行种种变形。例如，在实施方式中说明的结构能够利用实质上为同一结构、起到同一作用效果的结构或能够达到同一目的的结构替换。

Claims (13)

1.一种显示装置，其特征在于，具有：
多个像素电极，其设于用于显示图像的显示区域；
共用电极，其配置在所述多个像素电极的上方；
发光元件层，其夹设在所述多个像素电极与所述共用电极之间；以及
由多个层构成的电路层，所述多个层从所述显示区域到达位于所述显示区域的外侧的周边区域，
所述电路层在所述显示区域及所述周边区域分别具有多个薄膜晶体管，
设于所述周边区域的所述多个薄膜晶体管为交错型的第一薄膜晶体管，该第一薄膜晶体管具有由低温多晶硅构成的第一沟道层，且在第一源电极与第一栅电极之间及第一漏电极与第一栅电极之间不存在所述第一沟道层，
设于所述显示区域的所述多个薄膜晶体管包括交错型的第二薄膜晶体管，该第二薄膜晶体管具有由氧化物半导体构成的第二沟道层，且在第二源电极与第二栅电极之间及第二漏电极与第二栅电极之间不存在所述第二沟道层，
所述第二薄膜晶体管与所述第一薄膜晶体管相比位于更上层的位置。
2.如权利要求1所述的显示装置，其特征在于，
设于所述显示区域的所述第二薄膜晶体管以能够控制向所述多个像素电极的每一个供给的电流的供给量的方式被连接。
3.如权利要求1所述的显示装置，其特征在于，
构成所述电路层的所述多个层在所述显示区域包括向所述低温多晶硅的层注入离子而形成的导电层，
所述导电层位于与所述第一薄膜晶体管的所述第一沟道层同一层的位置，且与所述第二薄膜晶体管相比位于更下层的位置。
4.如权利要求3所述的显示装置，其特征在于，
所述导电层具有与所述第二薄膜晶体管的整体重叠的大小。
5.如权利要求3所述的显示装置，其特征在于，
构成所述电路层的所述多个层在所述显示区域还包括第二导电层，将所述导电层作为电容器的一个电极，所述第二导电层在与所述导电层相对的位置成为另一个电极，
所述第二导电层位于与所述第一薄膜晶体管的所述第一栅电极同一层的位置，且与所述第二薄膜晶体管相比位于更下层的位置。
6.如权利要求1～5中任一项所述的显示装置，其特征在于，
设于所述显示区域的所述多个薄膜晶体管在与所述周边区域的所述第一薄膜晶体管同一层的位置还包括所述第一薄膜晶体管。
7.如权利要求1～5中任一项所述的显示装置，其特征在于，
还具有接触插塞，该接触插塞将所述电路层的所述第一薄膜晶体管上方的层贯穿，且与所述第一沟道层连接，
构成所述电路层的所述多个层还包括金属层，该金属层以与所述第一薄膜晶体管的所述第一沟道层的至少端部重叠的方式，在与所述第二薄膜晶体管的所述第二栅电极同一层的位置由与所述第二栅电极相同的材料构成，
所述金属层以与所述接触插塞成为一体的方式形成。
8.一种显示装置的制造方法，所述显示装置具有用于显示图像的显示区域及位于所述显示区域的外侧的周边区域，所述显示装置的制造方法的特征在于，包括：
在所述周边区域形成交错型的第一薄膜晶体管的工序，所述第一薄膜晶体管具有由低温多晶硅构成的第一沟道层，且在第一源电极与第一栅电极之间及第一漏电极与第一栅电极之间不存在所述第一沟道层；
在形成所述第一薄膜晶体管之后，在所述显示区域形成交错型的第二薄膜晶体管的工序，该第二薄膜晶体管具有由氧化物半导体构成的第二沟道层，且在第二源电极与第二栅电极之间及第二漏电极与第二栅电极之间不存在所述第二沟道层；
在形成所述第二薄膜晶体管之后，在所述显示区域形成多个像素电极的工序；
在所述多个像素电极的上方形成发光元件层的工序；以及
在所述发光元件层的上方形成共用电极。
9.如权利要求8所述的显示装置的制造方法，其特征在于，
在所述周边区域形成所述第一薄膜晶体管的工序中，在所述显示区域通过形成所述低温多晶硅的层并注入离子而形成导电层。
10.如权利要求9所述的显示装置的制造方法，其特征在于，
所述导电层以具有与所述第二薄膜晶体管的整体重叠的大小的方式形成。
11.如权利要求9所述的显示装置的制造方法，其特征在于，
在所述周边区域形成所述第一薄膜晶体管的工序中，与所述第一栅电极的形成同时地，形成成为用于与所述导电层一起构成电容器的电极的第二导电层。
12.如权利要求8～11中任一项所述的显示装置的制造方法，其特征在于，
在所述周边区域形成所述第一薄膜晶体管的工序中，在所述显示区域也形成所述第一薄膜晶体管。
13.如权利要求8～11中任一项所述的显示装置的制造方法，其特征在于，
在所述显示区域形成所述第二薄膜晶体管的工序中，
在形成所述第二栅电极之前，在与所述第二栅电极相比位于下方的绝缘层形成到达所述第一沟道层的上表面的贯穿孔，
与所述第二栅电极的形成同时地，在所述贯穿孔内形成接触插塞，而且以与所述接触插塞成为一体且与所述第一薄膜晶体管的所述第一沟道层的至少端部重叠的方式形成金属层。
CN201710069669.XA 2016-03-23 2017-02-08 显示装置及显示装置的制造方法 Active CN107230690B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010911791.9A CN112038376A (zh) 2016-03-23 2017-02-08 显示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-058455 2016-03-23
JP2016058455A JP6673731B2 (ja) 2016-03-23 2016-03-23 表示装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010911791.9A Division CN112038376A (zh) 2016-03-23 2017-02-08 显示装置

Publications (2)

Publication Number Publication Date
CN107230690A true CN107230690A (zh) 2017-10-03
CN107230690B CN107230690B (zh) 2020-09-22

Family

ID=59898955

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201710069669.XA Active CN107230690B (zh) 2016-03-23 2017-02-08 显示装置及显示装置的制造方法
CN202010911791.9A Pending CN112038376A (zh) 2016-03-23 2017-02-08 显示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010911791.9A Pending CN112038376A (zh) 2016-03-23 2017-02-08 显示装置

Country Status (5)

Country Link
US (5) US10236330B2 (zh)
JP (1) JP6673731B2 (zh)
KR (1) KR102013488B1 (zh)
CN (2) CN107230690B (zh)
TW (1) TWI649881B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010624A (zh) * 2017-12-19 2019-07-12 乐金显示有限公司 显示装置
WO2020206811A1 (zh) * 2019-04-09 2020-10-15 深圳市华星光电半导体显示技术有限公司 一种tft阵列基板、其制备方法及其显示面板

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10088930B2 (en) * 2011-11-25 2018-10-02 Shanghai Tianma Micro-electronics Co., Ltd. Active matrix organic light emitting diode in-cell touch panel and drive method thereof
JP6673731B2 (ja) * 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP6706570B2 (ja) * 2016-12-05 2020-06-10 株式会社Ｊｏｌｅｄ 半導体装置、半導体装置の製造方法および表示装置
KR102519087B1 (ko) * 2017-06-30 2023-04-05 엘지디스플레이 주식회사 표시 장치 및 이의 제조 방법
US10361226B2 (en) * 2017-07-12 2019-07-23 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate, manufacturing method for the same and display panel
KR102390447B1 (ko) * 2017-07-28 2022-04-26 삼성디스플레이 주식회사 표시장치용 기판, 유기발광표시장치 및 유기발광표시장치의 제조방법
JP7219711B2 (ja) 2017-09-08 2023-02-08 株式会社カネカ 有機化合物の製造方法
KR102450078B1 (ko) * 2017-11-10 2022-09-30 엘지디스플레이 주식회사 표시 장치
KR102104981B1 (ko) * 2017-12-19 2020-05-29 엘지디스플레이 주식회사 표시 장치
CN107966841B (zh) * 2017-12-28 2020-06-02 友达光电（昆山）有限公司 一种显示装置
US11508760B2 (en) 2018-03-15 2022-11-22 Sharp Kabushiki Kaisha Active-matrix substrate and display device
US10916617B2 (en) * 2018-05-04 2021-02-09 Samsung Display Co., Ltd. Display device
KR102577900B1 (ko) 2018-06-12 2023-09-13 삼성디스플레이 주식회사 유기발광 표시장치
KR102651596B1 (ko) 2018-06-29 2024-03-27 삼성디스플레이 주식회사 표시장치
KR20200019309A (ko) 2018-08-13 2020-02-24 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
KR102599507B1 (ko) 2018-09-17 2023-11-09 삼성디스플레이 주식회사 디스플레이 장치
US11925078B2 (en) 2018-09-21 2024-03-05 Sharp Kabushiki Kaisha Display device including frame region, and bending region around display region
KR102654918B1 (ko) 2018-10-08 2024-04-05 삼성디스플레이 주식회사 표시장치
CN109378318B (zh) * 2018-10-15 2020-10-16 武汉华星光电半导体显示技术有限公司 一种显示面板及其制作方法
CN109148491B (zh) * 2018-11-01 2021-03-16 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
KR20200052782A (ko) 2018-11-07 2020-05-15 엘지디스플레이 주식회사 표시 장치
TWI677741B (zh) * 2018-11-12 2019-11-21 友達光電股份有限公司 顯示裝置
KR20200086770A (ko) 2019-01-09 2020-07-20 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20200090313A (ko) 2019-01-18 2020-07-29 삼성디스플레이 주식회사 표시 장치
KR20200100892A (ko) 2019-02-18 2020-08-27 삼성디스플레이 주식회사 표시 장치
KR20200105565A (ko) 2019-02-28 2020-09-08 삼성디스플레이 주식회사 표시 장치
JP7193404B2 (ja) * 2019-03-29 2022-12-20 株式会社ジャパンディスプレイ 表示装置
KR20200118316A (ko) 2019-04-05 2020-10-15 삼성디스플레이 주식회사 표시 장치
US11600688B2 (en) 2019-04-05 2023-03-07 Samsung Display Co., Ltd. Display device
KR20200119954A (ko) 2019-04-10 2020-10-21 삼성디스플레이 주식회사 게이트 구동부 및 이를 포함하는 표시 장치
US20220199657A1 (en) * 2019-04-17 2022-06-23 Sharp Kabushiki Kaisha Display device
CN111833785A (zh) 2019-04-17 2020-10-27 三星显示有限公司 显示面板以及显示设备
KR20200124798A (ko) 2019-04-24 2020-11-04 삼성디스플레이 주식회사 표시 장치
US11955558B2 (en) 2019-04-26 2024-04-09 Sharp Kabushiki Kaisha Display device
KR20200131401A (ko) 2019-05-13 2020-11-24 삼성디스플레이 주식회사 표시 장치
KR20200139291A (ko) 2019-06-03 2020-12-14 삼성디스플레이 주식회사 표시 장치
KR20210013460A (ko) * 2019-07-25 2021-02-04 삼성디스플레이 주식회사 디스플레이 장치
KR20210024382A (ko) 2019-08-23 2021-03-05 삼성디스플레이 주식회사 스캔 신호 구동부와 그를 포함한 표시 장치
KR20220094259A (ko) * 2020-12-28 2022-07-06 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
EP4170718A3 (en) * 2021-09-03 2023-08-23 LG Display Co., Ltd. Display panel and electronic device including same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008939A1 (en) * 2007-07-06 2009-01-08 Kkr Ip Limited Liability Company Modular wind turbine, multi-turbine wind turbine, wind turbine computer system, and method of use thereof
US20150206929A1 (en) * 2014-01-17 2015-07-23 Japan Display Inc. Light-emitting element display device
US20160064421A1 (en) * 2014-08-29 2016-03-03 Lg Display Co., Ltd. Thin film transistor substrate and display device using the same
US20160064465A1 (en) * 2014-08-29 2016-03-03 Lg Display Co., Ltd. Thin film transistor substrate and display using the same

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4144183B2 (ja) 2001-02-14 2008-09-03 セイコーエプソン株式会社 電気光学装置、その製造方法及び投射型表示装置
JP3608613B2 (ja) * 2001-03-28 2005-01-12 株式会社日立製作所 表示装置
KR101108369B1 (ko) * 2004-12-31 2012-01-30 엘지디스플레이 주식회사 폴리 실리콘형 액정 표시 장치용 어레이 기판 및 그 제조방법
JP2009070861A (ja) * 2007-09-11 2009-04-02 Hitachi Displays Ltd 表示装置
US8232598B2 (en) 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
KR100922063B1 (ko) * 2008-02-04 2009-10-16 삼성모바일디스플레이주식회사 유기 전계 발광표시장치
CN101847648B (zh) * 2009-03-23 2012-11-21 北京京东方光电科技有限公司 有源矩阵有机发光二极管像素结构及其制造方法
KR101022141B1 (ko) 2009-10-27 2011-03-17 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치
KR101293262B1 (ko) * 2009-10-30 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011055620A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011135908A1 (ja) 2010-04-30 2011-11-03 シャープ株式会社 回路基板および表示装置
US8623681B2 (en) * 2010-07-09 2014-01-07 Sharp Kabushiki Kaisha Thin film transistor substrate, method for manufacturing the same, and liquid crystal display panel
KR101876819B1 (ko) * 2011-02-01 2018-08-10 삼성디스플레이 주식회사 박막트랜지스터 기판 및 그의 제조방법
JP2012160679A (ja) 2011-02-03 2012-08-23 Sony Corp 薄膜トランジスタ、表示装置および電子機器
JP5725337B2 (ja) * 2011-03-24 2015-05-27 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
US10177170B2 (en) * 2011-06-24 2019-01-08 Sharp Kabushiki Kaisha Display device and method for manufacturing same
JP6004560B2 (ja) * 2011-10-06 2016-10-12 株式会社ジャパンディスプレイ 表示装置
JP5927602B2 (ja) * 2011-10-06 2016-06-01 株式会社Ｊｏｌｅｄ 表示装置の製造方法
JP6091905B2 (ja) * 2012-01-26 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
JP6325229B2 (ja) 2012-10-17 2018-05-16 株式会社半導体エネルギー研究所 酸化物膜の作製方法
KR102034254B1 (ko) * 2013-04-04 2019-10-21 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
JP6104099B2 (ja) * 2013-08-21 2017-03-29 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
US9818765B2 (en) * 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
KR102346544B1 (ko) * 2014-02-24 2022-01-05 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
KR102302802B1 (ko) * 2014-02-24 2021-09-16 엘지디스플레이 주식회사 박막 트랜지스터 기판을 포함하는 표시장치
US9490276B2 (en) * 2014-02-25 2016-11-08 Lg Display Co., Ltd. Display backplane and method of fabricating the same
CN104362125B (zh) * 2014-09-25 2017-10-13 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
KR102391348B1 (ko) * 2014-12-29 2022-04-28 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
US10020354B2 (en) * 2015-04-17 2018-07-10 Apple Inc. Organic light-emitting diode displays with silicon and semiconducting oxide thin-film transistors
KR102408898B1 (ko) * 2015-06-19 2022-06-16 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
KR102453950B1 (ko) * 2015-09-30 2022-10-17 엘지디스플레이 주식회사 표시장치와 그 구동 방법
JP6673731B2 (ja) * 2016-03-23 2020-03-25 株式会社ジャパンディスプレイ 表示装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008939A1 (en) * 2007-07-06 2009-01-08 Kkr Ip Limited Liability Company Modular wind turbine, multi-turbine wind turbine, wind turbine computer system, and method of use thereof
US20150206929A1 (en) * 2014-01-17 2015-07-23 Japan Display Inc. Light-emitting element display device
US20160064421A1 (en) * 2014-08-29 2016-03-03 Lg Display Co., Ltd. Thin film transistor substrate and display device using the same
US20160064465A1 (en) * 2014-08-29 2016-03-03 Lg Display Co., Ltd. Thin film transistor substrate and display using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010624A (zh) * 2017-12-19 2019-07-12 乐金显示有限公司 显示装置
CN110010624B (zh) * 2017-12-19 2023-06-23 乐金显示有限公司 显示装置
WO2020206811A1 (zh) * 2019-04-09 2020-10-15 深圳市华星光电半导体显示技术有限公司 一种tft阵列基板、其制备方法及其显示面板

Also Published As

Publication number Publication date
US20170278916A1 (en) 2017-09-28
US11404516B2 (en) 2022-08-02
JP2017173505A (ja) 2017-09-28
US20190165071A1 (en) 2019-05-30
US20230354647A1 (en) 2023-11-02
US10236330B2 (en) 2019-03-19
KR20170110503A (ko) 2017-10-11
US20210083029A1 (en) 2021-03-18
US11744111B2 (en) 2023-08-29
KR102013488B1 (ko) 2019-08-22
TWI649881B (zh) 2019-02-01
US10886351B2 (en) 2021-01-05
CN107230690B (zh) 2020-09-22
TW201735373A (zh) 2017-10-01
CN112038376A (zh) 2020-12-04
JP6673731B2 (ja) 2020-03-25
US20220310735A1 (en) 2022-09-29

Similar Documents

Publication Publication Date Title
CN107230690A (zh) 显示装置及显示装置的制造方法
US10388711B2 (en) Light emitting element display device
TWI557901B (zh) A light emitting element display device
CN104659057B (zh) 用于显示装置的阵列基板
US10910464B2 (en) Electronic device including an IC
CN106067471A (zh) 显示装置及其制造方法
US9806139B2 (en) Light emitting element display device
JP6967622B2 (ja) 表示装置基板
CN106249495A (zh) 显示面板及其阵列基板
US7342177B2 (en) Wiring board, electro-optical device and electronic instrument
US11387304B2 (en) Light emitting element display device
CN107799551A (zh) 显示装置
JP2006073520A (ja) 電気光学装置及びその製造方法並びに電子機器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant