CN107210188B - 用于沉积的监控系统与操作该系统的方法 - Google Patents

用于沉积的监控系统与操作该系统的方法 Download PDF

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Publication number
CN107210188B
CN107210188B CN201580068260.5A CN201580068260A CN107210188B CN 107210188 B CN107210188 B CN 107210188B CN 201580068260 A CN201580068260 A CN 201580068260A CN 107210188 B CN107210188 B CN 107210188B
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deposition
material layer
layer
substrate
spectrum
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CN107210188A (zh
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爱德华·W·布迪亚图
马耶德·A·福阿德
拉尔夫·霍夫曼
托马斯·诺瓦克
托德·伊根
梅迪·瓦泽-艾拉瓦尼
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201580068260.5A 2014-12-19 2015-12-15 用于沉积的监控系统与操作该系统的方法 Expired - Fee Related CN107210188B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462094270P 2014-12-19 2014-12-19
US62/094,270 2014-12-19
US14/839,656 2015-08-28
US14/839,656 US9870935B2 (en) 2014-12-19 2015-08-28 Monitoring system for deposition and method of operation thereof
PCT/US2015/065897 WO2016100394A1 (en) 2014-12-19 2015-12-15 Monitoring system for deposition and method of operation thereof

Publications (2)

Publication Number Publication Date
CN107210188A CN107210188A (zh) 2017-09-26
CN107210188B true CN107210188B (zh) 2021-04-09

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US (2) US9870935B2 (enExample)
EP (1) EP3234983A4 (enExample)
JP (1) JP6793647B2 (enExample)
KR (1) KR102513441B1 (enExample)
CN (1) CN107210188B (enExample)
SG (1) SG11201704196YA (enExample)
TW (1) TWI686845B (enExample)
WO (1) WO2016100394A1 (enExample)

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US10950448B2 (en) * 2018-04-06 2021-03-16 Applied Materials, Inc. Film quality control in a linear scan physical vapor deposition process
CN108425105A (zh) * 2018-05-24 2018-08-21 江苏微导纳米装备科技有限公司 一种原子层沉积在线监控系统
US12265327B2 (en) * 2018-07-30 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing apparatus and method thereof
US10978278B2 (en) 2018-07-31 2021-04-13 Tokyo Electron Limited Normal-incident in-situ process monitor sensor
US10886155B2 (en) * 2019-01-16 2021-01-05 Applied Materials, Inc. Optical stack deposition and on-board metrology
TWI772697B (zh) * 2019-10-23 2022-08-01 華邦電子股份有限公司 半導體製程的監控方法
WO2021150524A1 (en) * 2020-01-22 2021-07-29 Applied Materials, Inc. In-line monitoring of oled layer thickness and dopant concentration
WO2021150525A1 (en) * 2020-01-22 2021-07-29 Applied Materials, Inc. In-line monitoring of oled layer thickness and dopant concentration
US11939665B2 (en) * 2020-03-10 2024-03-26 Tokyo Electron Limted Film thickness measuring apparatus and film thickness measuring method, and film forming system and film forming method
DE102021103455A1 (de) * 2020-04-30 2021-11-04 Taiwan Semiconductor Manufacturing Co., Ltd. System und verfahren zur erkennung der verunreinigung vondünnschichten
US20220165593A1 (en) * 2020-11-24 2022-05-26 Applied Materials, Inc. Feedforward control of multi-layer stacks during device fabrication
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CN113862641B (zh) * 2021-08-16 2023-09-12 江汉大学 一种原子层沉积前驱体用量的监测系统及其方法与应用
US12061458B2 (en) * 2021-08-27 2024-08-13 Applied Materials, Inc. Systems and methods for adaptive troubleshooting of semiconductor manufacturing equipment
US20230169643A1 (en) * 2021-11-30 2023-06-01 Applied Materials, Inc. Monitoring of deposited or etched film thickness using image-based mass distribution metrology
TWI876530B (zh) 2023-09-13 2025-03-11 晶呈科技股份有限公司 晶圓表面膜層的檢測方法
CN118390020B (zh) * 2024-06-29 2024-09-20 江苏派莱特光电科技有限公司 用于真空镀膜机的操作控制系统

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TWI686845B (zh) 2020-03-01
JP6793647B2 (ja) 2020-12-02
US10522375B2 (en) 2019-12-31
SG11201704196YA (en) 2017-07-28
JP2018503119A (ja) 2018-02-01
EP3234983A1 (en) 2017-10-25
TW201633374A (zh) 2016-09-16
US20180114711A1 (en) 2018-04-26
KR102513441B1 (ko) 2023-03-22
KR20170097174A (ko) 2017-08-25
CN107210188A (zh) 2017-09-26
US9870935B2 (en) 2018-01-16
US20160181134A1 (en) 2016-06-23
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